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    ELECTRON SOURCE, ELECTRON GUN, AND ELECTRON MICROSCOPE DEVICE AND ELECTRON BEAM LITHOGRAPHY DEVICE USING IT
    1.
    发明申请
    ELECTRON SOURCE, ELECTRON GUN, AND ELECTRON MICROSCOPE DEVICE AND ELECTRON BEAM LITHOGRAPHY DEVICE USING IT 审中-公开
    电子源，电子枪和电子显微镜装置和电子束光刻设备使用它

    公开(公告)号：US20110186735A1

    公开(公告)日：2011-08-04

    申请号：US13020098

    申请日：2011-02-03

    申请人： Tadashi FUJIEDA ,  Makoto Okai ,  Takashi Ohshima ,  Boklae Cho

    发明人： Tadashi FUJIEDA ,  Makoto Okai ,  Takashi Ohshima ,  Boklae Cho

    IPC分类号： G21K7/00 ,  B01J19/08 ,  H01J9/04

    CPC分类号： B01J19/08 ,  G21K7/00 ,  H01J9/04 ,  H01J2237/06316

    摘要： An electron source is implemented which has a lower work function of an electron emission surface, yields emitted electrons of a narrower energy bandwidth and higher current density, and lasts longer than existing Zr/O/W electron sources. Further, an electron microscope which yields an image of higher-resolution in a shorter time and an electron beam lithography device which yields higher throughput are also provided. The electron source comprises a needle-shaped electrode made of metal having its tip in a needle shape, a heating body which heats up the needle-shaped electrode, and a diffusion source capable of being heated up by the heating body and made of a mixture of barium composite containing oxygen and carbon particles.

    摘要翻译： 实现了具有较低的电子发射表面功函数的电子源，产生较窄的能带宽和较高电流密度的发射电子，并且比现有的Zr / O / W电子源持续时间更长。 此外，还提供了在更短时间内产生更高分辨率的图像的电子显微镜以及产生较高产量的电子束光刻装置。 电子源包括由针尖形状的金属构成的针状电极，加热针状电极的加热体和能够被加热体加热并由混合物构成的扩散源 的含有氧和碳颗粒的钡复合物。

    MEASURING APPARATUS HAVING NANOTUBE PROBE
    3.
    发明申请
    MEASURING APPARATUS HAVING NANOTUBE PROBE 审中-公开
    具有纳米管探针的测量装置

    公开(公告)号：US20090243637A1

    公开(公告)日：2009-10-01

    申请号：US12412113

    申请日：2009-03-26

    申请人： Makoto OKAI ,  Motoyuki Hirooka

    发明人： Makoto OKAI ,  Motoyuki Hirooka

    IPC分类号： G01R27/00

    CPC分类号： G01R1/06761

    摘要： An object of the present invention is to provide a measuring apparatus such as a conduction characteristics evaluation apparatus, a probe microscope, etc. having a nanotube probe, wherein the measuring apparatus is succeeded in reducing the electrical resistance of the carbon nanotube as well as the electrical resistance between the carbon nanotube and a metal substrate to improve electrical conduction characteristics of the nanotube probe and attain a uniform diameter, thus improving the measurement accuracy.In order to solve the above-mentioned problem, there is provided a conduction characteristics evaluation apparatus having a nanotube probe made of a nanotube coated by tiny fragments of graphene sheets to improve the wettability with respect to metal materials and then coated by a metal layer, or a conduction characteristics evaluation apparatus having a nanotube probe made of a metal-coated amorphous nanotube composed of tiny fragments of graphene sheets.

    摘要翻译： 本发明的目的是提供一种具有纳米管探针的导电特性评价装置，探针显微镜等测量装置，其中测量装置成功地降低了碳纳米管的电阻以及 碳纳米管和金属基板之间的电阻，以改善纳米管探针的导电特性并获得均匀的直径，从而提高测量精度。 为了解决上述问题，提供了一种具有纳米管探针的导电特性评价装置，该纳米管探针由石墨烯片的微小碎片涂覆的纳米管构成，以提高相对于金属材料的润湿性，然后用金属层涂覆， 或具有由石墨烯片的微小碎片构成的金属涂覆的无定形纳米管制成的纳米管探针的导电特性评价装置。

    Emissive flat panel display having electron sources with high current density and low electric field strength
    4.
    发明授权
    Emissive flat panel display having electron sources with high current density and low electric field strength 失效
    具有高电流密度和低电场强度的电子源的发光平板显示器

    公开(公告)号：US07196463B2

    公开(公告)日：2007-03-27

    申请号：US10911601

    申请日：2004-08-05

    申请人： Makoto Okai ,  Takahiko Muneyoshi ,  Tomio Yaguchi ,  Nobuaki Hayashi

    发明人： Makoto Okai ,  Takahiko Muneyoshi ,  Tomio Yaguchi ,  Nobuaki Hayashi

    IPC分类号： H01J1/62 ,  H01J1/00

    CPC分类号： H01J1/304 ,  B82Y10/00 ,  H01J29/04 ,  H01J31/127 ,  H01J2201/30469

    摘要： The present invention provides an emissive flat panel display device which is capable of performing a gate operation at a relatively low voltage of several V to several tens V using gate electrodes. In the emissive flat panel display device which includes a back panel which is constituted of a back substrate on which cathode electrodes having electron sources formed of carbon nanotubes and gate electrodes are formed, a face panel which forms phosphors and anode electrodes thereon, and a sealing frame which seals the back panel and the face panel, the difference between an electric field strength Emax for allowing the electron sources to obtain the required maximum emission current density and an electric field strength Emin which becomes the minimum emission current density is set to 1V/μm or less, and preferably 0.5V/μm or less.

    摘要翻译： 本发明提供一种发射平板显示装置，其能够使用栅电极在几V至几十V的较低电压下进行栅极操作。 在包括后面板的发光平板显示装置中，背面板由背面基板构成，在背面基板上形成有由碳纳米管和栅电极形成的电子源的阴极，在其上形成荧光体和阳极电极的面板和密封件 框架，其密封后面板和面板，使电子源获得所需的最大发射电流密度的电场强度Emax与成为最小发射电流密度的电场强度Emin之间的差设定为1V / 以下，优选为0.5V / mum以下。

    Self-luminous flat-panel display
    5.
    发明申请
    Self-luminous flat-panel display 审中-公开
    自发光平板显示屏

    公开(公告)号：US20070018563A1

    公开(公告)日：2007-01-25

    申请号：US11440335

    申请日：2006-05-24

    申请人： Makoto Okai ,  Tetsuya Yamazaki ,  Susumu Sasaki ,  Takahiko Muneyoshi ,  Tomio Yaguchi ,  Jun Ishikawa ,  Nobuaki Hayashi

    发明人： Makoto Okai ,  Tetsuya Yamazaki ,  Susumu Sasaki ,  Takahiko Muneyoshi ,  Tomio Yaguchi ,  Jun Ishikawa ,  Nobuaki Hayashi

    IPC分类号： H01J63/04 ,  H01J1/62

    CPC分类号： H01J31/127 ,  H01J1/68

    摘要： This invention relates to a field-emission-type flat-panel display apparatus that obtains an image by causing the electrons emitted from each of electron sources arranged in matrix form to impinge upon the phosphors formed on a phosphor screen. A carbon nanotube is used as an electron source material in this flat-panel display apparatus, and the electron sources are formed by printing. The vertical sizes of the depressions and projections on the surface of each electron source which has been formed by printing are suppressed to a value equal to or less than 1 μm, preferably, equal to or less than 0.5 μm. This makes it possible to obtain a flat-panel display apparatus of stable emission characteristics.

    摘要翻译： 本发明涉及一种场发射型平板显示装置，其通过使从矩阵形式排列的每个电子源发射的电子撞击形成在荧光屏上的荧光体而获得图像。 在该平板显示装置中，使用碳纳米管作为电子源材料，通过印刷形成电子源。 通过印刷形成的每个电子源的表面上的凹凸的垂直尺寸被抑制在等于或小于1μm，优选等于或小于0.5μm的值。 由此，能够得到稳定的发光特性的平板显示装置。

    Emissive flat panel display device
    6.
    发明申请
    Emissive flat panel display device 失效
    发光平板显示装置

    公开(公告)号：US20050029924A1

    公开(公告)日：2005-02-10

    申请号：US10911601

    申请日：2004-08-05

    申请人： Makoto Okai ,  Takahiko Muneyoshi ,  Tomio Yaguchi ,  Nobuaki Hayashi

    发明人： Makoto Okai ,  Takahiko Muneyoshi ,  Tomio Yaguchi ,  Nobuaki Hayashi

    IPC分类号： H01J29/04 ,  H01J1/30 ,  H01J1/304 ,  H01J1/62 ,  H01J31/12 ,  H01J63/04

    CPC分类号： H01J1/304 ,  B82Y10/00 ,  H01J29/04 ,  H01J31/127 ,  H01J2201/30469

    摘要： The present invention provides an emissive flat panel display device which is capable of performing a gate operation at a relatively low voltage of several V to several tens V using gate electrodes. In the emissive flat panel display device which includes a back panel which is constituted of a back substrate on which cathode electrodes having electron sources formed of carbon nanotubes and gate electrodes are formed, a face panel which forms phosphors and anode electrodes thereon, and a sealing frame which seals the back panel and the face panel, the difference between an electric field strength Emax for allowing the electron sources to obtain the required maximum emission current density and an electric field strength Emin which becomes the minimum emission current density is set to 1V/μm or less, and preferably 0.5V/μm or less.

    摘要翻译： 本发明提供一种发射平板显示装置，其能够使用栅电极在几V至几十V的较低电压下进行栅极操作。 在包括后面板的发光平板显示装置中，背面板由背面基板构成，在背面基板上形成有由碳纳米管和栅电极形成的电子源的阴极，在其上形成荧光体和阳极电极的面板和密封件 框架，其密封后面板和面板，使电子源获得所需的最大发射电流密度的电场强度Emax与成为最小发射电流密度的电场强度Emin之间的差设定为1V / 以下，优选为0.5V / mum以下。

    Thin-film electron source, process for manufacturing thin-film electron source, and display
    7.
    发明授权
    Thin-film electron source, process for manufacturing thin-film electron source, and display 有权
    薄膜电子源，薄膜电子源制造工艺及显示

    公开(公告)号：US06570321B1

    公开(公告)日：2003-05-27

    申请号：US10031380

    申请日：2002-01-18

    申请人： Toshiaki Kusunoki ,  Mutsumi Suzuki ,  Masakazu Sagawa ,  Makoto Okai ,  Akitoshi Ishizaka

    发明人： Toshiaki Kusunoki ,  Mutsumi Suzuki ,  Masakazu Sagawa ,  Makoto Okai ,  Akitoshi Ishizaka

    IPC分类号： H01J162

    CPC分类号： B82Y10/00 ,  H01J1/312 ,  H01J9/027 ,  H01J2329/00

    摘要： A process for manufacturing a thin-film electron source including a lower electrode (11), an upper electrode, and an insulating layer sandwiched between the lower electrode (11) and the upper electrode. The process comprises a first step of forming an anodized film over the surface of the lower electrode (11) by an anodizing method, a second step of etching the surface side of the anodized film, and a third step of forming an anodized film again over the surface of the lower electrode (11) by an anodizing method to form said insulating layer. As a result, the film thickness of such an outer layer (26) of the insulating layer containing much impurity can be reduced to reduce the number of electron trapped.

    摘要翻译： 一种制造薄膜电子源的方法，包括夹在下电极（11）和上电极之间的下电极（11），上电极和绝缘层。 该方法包括通过阳极氧化方法在下电极（11）的表面上形成阳极氧化膜的第一步骤，蚀刻阳极氧化膜的表面侧的第二步骤和再次形成阳极化膜的第三步骤 通过阳极氧化方法使下电极（11）的表面形成所述绝缘层。 结果，可以减少含有大量杂质的绝缘层的这种外层（26）的膜厚度，以减少被俘获的电子的数量。