摘要:
An object of the invention is to provide an inertial sensor with small delay and high accuracy. An inertial sensor 1 includes an acceleration detecting element 2 that detects an acceleration of at least one axis of a vehicle; a first filter 6 that limits a detection signal of the acceleration to a first band; a second filter 7 that limits a detection signal of the acceleration to a second band; a vehicle control variable calculation section 8 that calculates a vehicle control variable Gxc on the basis of the detection signal of the acceleration limited to the second band; and a sensor signal output section 9 that outputs the detection signal of the acceleration limited to the first band and the vehicle control variable.
摘要:
An article supply apparatus includes a container storage rack for storing containers, and an article storage rack for storing articles taken out of the container. The article supply apparatus includes a transfer apparatus for transporting the articles between the container of the container storage rack and the article storage rack. The article supply apparatus includes a transportation apparatus for transporting the container between the transfer apparatus and the container storage rack, and a supply apparatus for taking required articles out of the article storage rack, and supplying the articles to a processing tool and supply the articles from the processing tool to the article storage rack.
摘要:
An electron beam emitted from a field-emission electron source array passes through a plurality of through holes formed in a mesh structure and reaches a target. Each of the plurality of through holes in the mesh structure has an opening on a side of the field-emission electron source array and an electron beam passageway that continues from the opening. The mesh structure is formed of a silicon-containing material doped with a N-type or P-type material. In this way, it is possible to suppress a decrease in the amount of the electron beam reaching the target while securing a mechanical strength of an electrode provided with a large number of through holes, and suppress expansion of the electron beam on the target.
摘要:
An amplifier includes: a single-stage or multiple-stage variable gain amplifier that amplifies an input signal with a controlled gain; a AGC control circuit that detects the peak level of a signal outputted from the variable gain amplifier in the final stage, converts the resultant signal to a digital signal, and outputs an AGC control signal for controlling the gain of the variable gain amplifier based on the converted digital signal; an EVR control circuit that outputs an EVR control signal according to a signal of setting an attenuation value or an amplification value for EVR inputted from an electronic variable resistor control terminal; and a gain control circuit that controls the gain of the variable gain amplifier in accordance with at least one of the AGC control signal and the EVR control signal. The occurrence of “popping” sounds caused by differences in DC voltage due to switching between an AGC circuit and an electronic variable resistor circuit can be suppressed.
摘要:
A stable field-emission electron source that does not suffer from a current drop even after a high-current density operation for a long time is provided. The field-emission electron source includes: a substrate; an insulating layer that is formed on the substrate and that has a plurality of openings; cathodes arranged at the respective openings in order to emit electron beams; a lead electrode formed on the insulating layer in order to control emission of electrons from the respective cathodes; and a surface-modifying layer formed on the surface of each of the cathodes emitting electrons, comprising a chemical bond between a cathode material composing the cathodes and a material different from the cathode material.
摘要:
AnNchMOS transistor (1) is provided for muting of an output terminal (10) to which positive and negative output signals are outputted, and a mute switch circuit (3) is provided for controlling on/off of the transistor (1) by switching a voltage applied to the gate of the transistor (1). When muting is turned off, the back gate of the transistor (1) is biased by resistance division between resistors (R1 and R2) connected in series between the output terminal (10) and a predetermined negative potential (VSS).
摘要:
In a BTL amplifier of the present invention, between first and third transistor parts which are laterally adjacent, directions of semiconductor regions are parallel. Between the first and second transistor parts and the third and fourth transistor parts, each which are longitudinally adjacent, directions of semiconductor regions are perpendicular. The first and the third transistor parts are connected to a power supply terminal through a first wire. The second and the fourth transistor parts are connected to a ground terminal through a second wire. The first and the second transistor parts are connected to a first output terminal through a third wire. The third and the fourth transistor parts are connected to a second output terminal through a fourth wire.
摘要:
An image processing device for realizing more realistic pictures of explosions in video game devices and the like. Objects displaying such pictures of explosions are formed of spherical polygons (R1, R2, R3, . . . ) and planar polygons (S1, S2, S3, . . . ). Pictures of explosions are realized by alternately arranging these spherical polygons and planar polygons with the lapse in time. Preferably, pictures of polygons are realized by arranging the spherical polygons in layers on the boundary of the planar polygons.
摘要:
A running rail 9 and a second overhead vehicle 12 are arranged parallel to a running rail 7 for a first overhead vehicle 10 and closer to inspection devices 20 than the running rail 7. A buffer 14 is provided below the running rail 7. The overhead vehicle 12 conveys a cassette 40 between load ports 24 and the buffer 14. The overhead vehicle 10 conveys the cassette 40 between the buffer 14 and other positions. The present invention can deal with inspection devices or the like which have a high throughput by locally improving their conveying capability.
摘要:
In a BTL amplifier of the present invention, between first and third transistor parts (10, 11) which are laterally adjacent, directions of semiconductor regions (102, 104, 106) are parallel. Between the first and second transistor parts (10, 12) and the third and fourth transistor parts (12, 13), each which are longitudinally adjacent, directions of semiconductor regions (102, 104, 106) are perpendicular. The first and the third transistor parts (10, 12) are connected to a power supply terminal (1) through a first wire (51). The second and the fourth transistor parts (11, 13) are connected to a ground terminal (2) through a second wire (52). The first and the second transistor parts (10, 11) are connected to a first output terminal (3) through a third wire (53). The third and the fourth transistor parts (12, 13) are connected to a second output terminal (4) through a fourth wire (54).