公开(公告)号：US07045254B2

公开(公告)日：2006-05-16

申请号：US10307800

申请日：2002-12-02

申请人： Wolfgang Dettmann ,  Gunter Antesberger ,  Jan Heumann ,  Mario Hennig

发明人： Wolfgang Dettmann ,  Gunter Antesberger ,  Jan Heumann ,  Mario Hennig

IPC分类号： G03F9/00

CPC分类号： G03F1/84 ,  G03F1/44 ,  G03F1/72

摘要： A mask, and in particular a phase shift product mask, utilizes predetermined defects being produced during the fabrication thereof in the so-called “second layer” process. The defects are identified by markers in their direct vicinity. The markers are quadrangular and indicate, by virtue of their number in combination with their configuration, information about the respectively assigned defect, such as, for example, defect type, defect size, etc.

公开(公告)号：US06838216B2

公开(公告)日：2005-01-04

申请号：US10438370

申请日：2003-05-14

申请人： Uwe Griesinger ,  Mario Hennig ,  Jürgen Knobloch ,  Rainer Pforr ,  Manuel Vorwerk

发明人： Uwe Griesinger ,  Mario Hennig ,  Jürgen Knobloch ,  Rainer Pforr ,  Manuel Vorwerk

IPC分类号： G03F1/00 ,  G03F1/36 ,  G03F7/20 ,  H01L21/027 ,  G03F9/00 ,  G06F17/50

CPC分类号： G03F7/70441 ,  G03F1/29 ,  G03F7/70433

摘要： Auxiliary openings are assigned to openings on a mask to be transferred to a wafer. These auxiliary openings have a phase-shifting property, preferably between 160° and 200° with respect to the openings, and a cross section lying below the limiting dimension for the printing of the projection apparatus, so that the auxiliary openings themselves are not printed onto the wafer. However, the auxiliary openings do enhance the contrast of the aerial image, in particular of an associated, isolated or semi-isolated opening on the wafer. The auxiliary openings may have a distance from the opening that lies above the resolution limit of the projection apparatus but that is less than the coherence length of the light used for the projection. A phase-related utilization of the optical proximity effect results, which can produce elliptical structures from square openings on the mask when the auxiliary openings are disposed in the preferential direction.

公开(公告)号：US07339652B2

公开(公告)日：2008-03-04

申请号：US11339844

申请日：2006-01-26

申请人： Molela Moukara ,  Rainer Pforr ,  Thomas Muelders ,  Mario Hennig ,  Karsten Zeiler

发明人： Molela Moukara ,  Rainer Pforr ,  Thomas Muelders ,  Mario Hennig ,  Karsten Zeiler

IPC分类号： G03B27/54 ,  G03B27/72 ,  G03B27/42

CPC分类号： G03F7/70283 ,  G03F1/30 ,  G03F1/32 ,  G03F7/701 ,  G03F7/70108 ,  G03F7/70125

摘要： An improvement of the imaging quality with simultaneous transfer of line-space gratings and peripheral structures including a MUX space is achieved using a quadrupole illumination whose poles are formed in elongate fashion and whose longitudinal axes are arranged perpendicular to the orientation of the lines of the line-space grating arranged on a mask. The structure imaging of the line-space grating is improved with regard to contrast, MEEF, and process window, while the geometrical fidelity of the peripheral structure, in particular of the MUX space, is stabilized over a wide depth of field range.

摘要翻译： 通过同时传输线间隔光栅和包括MUX空间的外围结构，可以实现成像质量的提高，其使用四极照明，其极以细长形式形成，其纵轴垂直于线的线的方向排列 光栅布置在掩模上。 相对于对比度，MEEF和处理窗口，线空间光栅的结构成像得到改善，而外围结构（特别是MUX空间）的几何保真度在宽的景深范围内是稳定的。

公开(公告)号：US20080042171A1

公开(公告)日：2008-02-21

申请号：US11506205

申请日：2006-08-18

申请人： Sebastian Mosler ,  Mario Hennig ,  Karsten Zeiler ,  Thi Phuong Hoa Nguyen ,  Rainer Pforr ,  Jorg Thiele

发明人： Sebastian Mosler ,  Mario Hennig ,  Karsten Zeiler ,  Thi Phuong Hoa Nguyen ,  Rainer Pforr ,  Jorg Thiele

IPC分类号： H01L29/76 ,  H01L21/8234 ,  H01L27/108 ,  H01L21/8242

CPC分类号： H01L27/088 ,  G03F1/30 ,  H01L27/0207 ,  H01L27/10885

摘要： Methods of forming transistor arrangements using alternating phase shift masks are provided. The mask may include two parallel opaque lines, a first transparent section separating the opaque lines and a second transparent section in the rest. The second transparent section may shift the phase with respect to the first transparent section by 180 degree. A phase conflict occurs along an edge between the first and the second transparent sections. A semiconductor substrate is patterned via the mask and, from the opaque lines functional active areas of a transistor pair and from the phase conflict edge, thereby resulting in a parasitic area. A separation gate is provided that is capable of switching off a parasitic transistor being formed within the parasitic area. Channel widths may be stabilized and maximized within dense transistor arrangements, for example, in a multiplexer portion of a sense amplifier arrangement for memory cell arrays.

摘要翻译： 提供了使用交替相移掩模形成晶体管布置的方法。 掩模可以包括两个平行的不透明线，分隔不透明线的第一透明部分和其余部分中的第二透明部分。 第二透明部分可以将相位相对于第一透明部分移位180度。 沿着第一和第二透明部分之间的边缘发生相位冲突。 通过掩模对半导体衬底进行图案化，并且从不透明线将晶体管对的功能有效区域和相冲突边缘图案化，由此导致寄生区域。 提供了一种能够关闭在寄生区域内形成的寄生晶体管的分离栅极。 通道宽度可以在致密晶体管布置中稳定和最大化，例如在用于存储单元阵列的读出放大器装置的多路复用器部分中。

公开(公告)号：US20070009816A1

公开(公告)日：2007-01-11

申请号：US11455286

申请日：2006-06-16

申请人： Rainer Pforr ,  Mario Hennig ,  Jens Reichelt ,  Thomas Muelders

发明人： Rainer Pforr ,  Mario Hennig ,  Jens Reichelt ,  Thomas Muelders

IPC分类号： G03F7/20

CPC分类号： G02B5/205 ,  G03F7/7015 ,  G03F7/70191 ,  G03F7/70625

摘要： A transparent optical element in a region between a photo mask and a light source of a photolithographic apparatus is provided having a plurality of attenuating elements being arranged in accordance with a first intensity correction function. The first intensity correction function is calculated from variations of characteristic feature size of structural elements of a resist pattern as compared to the nominal values of structural elements of a layout pattern. The variations of the characteristic feature size are divided into a first contribution being associated with the photolithographic apparatus and into a second contribution being associated with the photo mask.

摘要翻译： 提供了一种在光刻设备的光掩模和光源之间的区域中的透明光学元件，其具有根据第一强度校正功能布置的多个衰减元件。 与布局图案的结构元件的标称值相比，第一强度校正功能是根据抗蚀剂图案的结构元件的特征特征尺寸的变化计算的。 特征特征尺寸的变化被分为与光刻设备相关联的第一贡献和与光掩模相关联的第二贡献。

公开(公告)号：US20050069790A1

公开(公告)日：2005-03-31

申请号：US10952885

申请日：2004-09-30

申请人： Stefan Gruss ,  Detlef Hofmann ,  Rainer Pforr ,  Mario Hennig ,  Guido Thielscher ,  Hans-Georg Froehlich

发明人： Stefan Gruss ,  Detlef Hofmann ,  Rainer Pforr ,  Mario Hennig ,  Guido Thielscher ,  Hans-Georg Froehlich

IPC分类号： G03F7/20 ,  G03F9/00 ,  H01L23/544 ,  G03C5/00

CPC分类号： G03F9/7084 ,  G03F7/70633 ,  G03F9/7076 ,  H01L23/544 ,  H01L2223/5442 ,  H01L2223/54453 ,  H01L2223/54466 ,  H01L2924/0002 ,  Y10S430/143 ,  H01L2924/00

摘要： A method for reducing an overlay error of structures of a layer to be patterned relative to those of a reference layer includes formation of standard measurement marks assigned to one another in the two layers for determining an overlay error and for setting up further measurement marks for determining an additional optical imaging error of the projection system at least in the current layer. The further measurement marks have a geometry adapted to the geometry of selected structures of the circuit patterns to be transferred by projection from masks onto semiconductor substrates. An imaging error affects circuit structures and further measurement marks in the same way. An alignment correction for a subsequent exposure can be calculated from the measured positional deviations between the two standard measurement marks and between the standard measurement mark and the further measurement mark of the layer currently to be patterned.

摘要翻译： 用于减少要被图案化的层的结构相对于参考层的结构的覆盖误差的方法包括形成在两层中彼此分配的标准测量标记，以确定重叠误差并设置用于确定的另外的测量标记 至少在当前层中投影系统的附加光学成像误差。 另外的测量标记具有适于通过从掩模投影到半导体衬底上将要传送的电路图案的选定结构的几何形状的几何形状。 成像误差以同样的方式影响电路结构和进一步的测量标记。 可以从测量的两个标准测量标记之间的位置偏差和标准测量标记与当前要构图的层的另一测量标记之间的测量位置偏差来计算后续曝光的对准校正。

公开(公告)号：US07425396B2

公开(公告)日：2008-09-16

申请号：US10952885

申请日：2004-09-30

申请人： Stefan Gruss ,  Detlef Hofmann ,  Rainer Pforr ,  Mario Hennig ,  Guido Thielscher ,  Hans-Georg Froehlich

发明人： Stefan Gruss ,  Detlef Hofmann ,  Rainer Pforr ,  Mario Hennig ,  Guido Thielscher ,  Hans-Georg Froehlich

IPC分类号： G03C5/00 ,  G03F9/00

CPC分类号： G03F9/7084 ,  G03F7/70633 ,  G03F9/7076 ,  H01L23/544 ,  H01L2223/5442 ,  H01L2223/54453 ,  H01L2223/54466 ,  H01L2924/0002 ,  Y10S430/143 ,  H01L2924/00

摘要： A method for reducing an overlay error of structures of a layer to be patterned relative to those of a reference layer includes formation of standard measurement marks assigned to one another in the two layers for determining an overlay error and for setting up further measurement marks for determining an additional optical imaging error of the projection system at least in the current layer. The further measurement marks have a geometry adapted to the geometry of selected structures of the circuit patterns to be transferred by projection from masks onto semiconductor substrates. An imaging error affects circuit structures and further measurement marks in the same way. An alignment correction for a subsequent exposure can be calculated from the measured positional deviations between the two standard measurement marks and between the standard measurement mark and the further measurement mark of the layer currently to be patterned.

摘要翻译： 用于减少要被图案化的层的结构相对于参考层的结构的覆盖误差的方法包括形成在两层中彼此分配的标准测量标记，以确定重叠误差并设置用于确定的另外的测量标记 至少在当前层中投影系统的附加光学成像误差。 另外的测量标记具有适于通过从掩模投影到半导体衬底上将要传送的电路图案的选定结构的几何形状的几何形状。 成像误差以同样的方式影响电路结构和进一步的测量标记。 可以从测量的两个标准测量标记之间的位置偏差和标准测量标记与当前要构图的层的另一测量标记之间的测量位置偏差来计算后续曝光的对准校正。

公开(公告)号：US07393613B2

公开(公告)日：2008-07-01

申请号：US10791763

申请日：2004-03-04

申请人： Wolfgang Dettmann ,  Jörg Thiele ,  Rainer Pforr ,  Mario Hennig ,  Karsten Zeiler

发明人： Wolfgang Dettmann ,  Jörg Thiele ,  Rainer Pforr ,  Mario Hennig ,  Karsten Zeiler

IPC分类号： G03F1/00 ,  G03F1/14

CPC分类号： G03F7/705 ,  G03F1/70 ,  G03F7/70466

摘要： A set of at least two masks, coordinated with one another, for the projection of structure patterns, into the same photosensitive layer arranged on a semiconductor wafer. The first mask includes a semitransparent or nontransparent first layer, which is arranged on a first substrate and in which at least one first opening is formed at a first position, the first opening having a first lateral dimension, which is greater than the resolution limit of a projection system for the projection of the structure patterns. The second mask includes a semitransparent or nontransparent second layer, which is arranged on a second substrate and in which at least one dummy structure assigned to the first opening is formed at a second position, the dummy structure having a second lateral dimension, which is smaller than the resolution limit of the projection system wherein the first position on the first mask corresponds to the second position on the second mask.

摘要翻译： 一组至少两个掩模，用于将结构图案的投影彼此配合到设置在半导体晶片上的相同感光层中。 第一掩模包括半透明或不透明的第一层，其布置在第一基板上，并且其中至少一个第一开口形成在第一位置，第一开口具有第一横向尺寸，该第一横向尺寸大于 用于投影结构图案的投影系统。 第二掩模包括半透明或不透明的第二层，其布置在第二基板上，并且其中在第二位置处形成分配给第一开口的至少一个虚拟结构，该虚拟结构具有第二横向尺寸，该第二横向尺寸较小 比投影系统的分辨率极限，其中第一掩模上的第一位置对应于第二掩模上的第二位置。

公开(公告)号：US20060181691A1

公开(公告)日：2006-08-17

申请号：US11339844

申请日：2006-01-26

申请人： Molela Moukara ,  Rainer Pforr ,  Thomas Muelders ,  Mario Hennig ,  Karsten Zeiler

发明人： Molela Moukara ,  Rainer Pforr ,  Thomas Muelders ,  Mario Hennig ,  Karsten Zeiler

IPC分类号： G03B27/54

CPC分类号： G03F7/70283 ,  G03F1/30 ,  G03F1/32 ,  G03F7/701 ,  G03F7/70108 ,  G03F7/70125

摘要： An improvement of the imaging quality with simultaneous transfer of line-space gratings and peripheral structures including a MUX space is achieved using a quadrupole illumination whose poles are formed in elongate fashion and whose longitudinal axes are arranged perpendicular to the orientation of the lines of the line-space grating arranged on a mask. The structure imaging of the line-space grating is improved with regard to contrast, MEEF, and process window, while the geometrical fidelity of the peripheral structure, in particular of the MUX space, is stabilized over a wide depth of field range.

摘要翻译： 通过同时传输线间隔光栅和包括MUX空间的外围结构，可以实现成像质量的提高，其使用四极照明，其极以细长形式形成，其纵轴垂直于线的线的方向排列 光栅布置在掩模上。 相对于对比度，MEEF和处理窗口，线空间光栅的结构成像得到改善，而外围结构（特别是MUX空间）的几何保真度在宽的景深范围内是稳定的。

公开(公告)号：US07393614B2

公开(公告)日：2008-07-01

申请号：US10792693

申请日：2004-03-05

申请人： Roderick Köhle ,  Rainer Pforr ,  Jörg Thiele ,  Wolfgang Dettmann ,  Markus Hofsäss ,  Mario Hennig

发明人： Roderick Köhle ,  Rainer Pforr ,  Jörg Thiele ,  Wolfgang Dettmann ,  Markus Hofsäss ,  Mario Hennig

IPC分类号： G03F1/00 ,  G03F1/14

CPC分类号： G03F7/70466 ,  G03F1/30 ,  G03F1/34 ,  G03F1/70

摘要： A set of at least two masks for the projection of structure patterns coordinated with one another by a projection system into the same photosensitive layer of a semiconductor wafer, in which the set of at least two masks includes a primary mask having an opaque structure element, which is formed at a first position on the first mask. A second mask of the set, for example a trimming mask, which is assigned to the first mask, can have a semitransparent region assigned to the structure element of the first mask. The semitransparent region can be formed at the same position on the second mask as the opaque structure element on the first mask. With the aid of the suitable choice of the transparency of the semitransparent region, it is possible to enable an undesirable resist region to be trimmed away for enlargement of a process window during exposure of the photosensitive layer on the semiconductor wafer.

摘要翻译： 一组至少两个掩模，用于通过投影系统将相互配合的结构图案投影到半导体晶片的相同感光层中，其中该组至少两个掩模包括具有不透明结构元件的主掩模， 其形成在第一掩模上的第一位置。 该集合的第二掩码（例如，被分配给第一掩码的修剪掩模）可以具有分配给第一掩码的结构元素的半透明区域。 半透明区域可以形成在第二掩模上与第一掩模上的不透明结构元件相同的位置处。 借助于半透明区域的透明度的适当选择，有可能在半导体晶片上的感光层曝光期间使不期望的抗蚀剂区域被修剪以放大处理窗口。