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公开(公告)号：US06903017B2
公开(公告)日：2005-06-07
申请号：US10648735
申请日：2003-08-26
申请人： Ricky D. Snyder , Robert G Long , David W Hula , Mark D. Crook
发明人： Ricky D. Snyder , Robert G Long , David W Hula , Mark D. Crook
IPC分类号： H01L23/52 , H01L21/3205 , H01L21/768 , H01L23/00 , H01L23/31 , H01L23/532 , H01L21/44
CPC分类号： H01L23/564 , H01L21/32051 , H01L21/76828 , H01L21/76886 , H01L23/3171 , H01L23/53223 , H01L2924/0002 , H01L2924/1433 , H01L2924/00
摘要： An integrated circuit metallization structure using a titanium/aluminum alloy, and a method to generate such a structure, provide reduced leakage current by allowing mobile impurities such as water, oxygen, and hydrogen to passivate structural defects in the silicon layer of the IC. The titanium layer of the structure is at least partially alloyed with the aluminum layer, thereby restricting the ability of the titanium to getter the mobile impurities within the various layers of the IC. Despite the alloying of the titanium and aluminum, the metallization structure exhibits the superior contact resistance and electromigration properties associated with titanium.
摘要翻译： 使用钛/铝合金的集成电路金属化结构和产生这种结构的方法通过允许诸如水，氧和氢之类的移动杂质钝化IC的硅层中的结构缺陷来提供减小的漏电流。 该结构的钛层至少部分地与铝层合金化，从而限制钛吸收IC内各层内的移动杂质的能力。 尽管钛和铝的合金化，金属化结构表现出与钛相关的优异的接触电阻和电迁移性能。
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公开(公告)号：US06646346B1
公开(公告)日：2003-11-11
申请号：US09698459
申请日：2000-10-27
申请人： Ricky D. Snyder , Robert G Long , David W Hula , Mark D. Crook
发明人： Ricky D. Snyder , Robert G Long , David W Hula , Mark D. Crook
IPC分类号： H01L2348
CPC分类号： H01L23/564 , H01L21/32051 , H01L21/76828 , H01L21/76886 , H01L23/3171 , H01L23/53223 , H01L2924/0002 , H01L2924/1433 , H01L2924/00
摘要： An integrated circuit metallization structure using a titanium/aluminum alloy, and a method to generate such a structure, provide reduced leakage current by allowing mobile impurities such as water, oxygen, and hydrogen to passivate structural defects in the silicon layer of the IC. The titanium layer of the structure is at least partially alloyed with the aluminum layer, thereby restricting the ability of the titanium to getter the mobile impurities within the various layers of the IC. Despite the alloying of the titanium and aluminum, the metallization structure exhibits the superior contact resistance and electromigration properties associated with titanium.
摘要翻译： 使用钛/铝合金的集成电路金属化结构和产生这种结构的方法通过允许诸如水，氧和氢之类的移动杂质钝化IC的硅层中的结构缺陷来提供减小的漏电流。 该结构的钛层至少部分地与铝层合金化，从而限制钛吸收IC内各层内的移动杂质的能力。 尽管钛和铝的合金化，金属化结构表现出与钛相关的优异的接触电阻和电迁移性能。
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公开(公告)号：US5110712A
公开(公告)日：1992-05-05
申请号：US547093
申请日：1990-04-25
IPC分类号： H01L21/311 , H01L21/768
CPC分类号： H01L21/76802 , H01L21/31138
摘要： A system for integrating a composite dielectric layer in an integrated circuit to facilitate fabrication of a high density multi-level interconnect with external contacts. The composite dielectric layer comprises of a polymer layer which normally comprises a polyimide that is deposited using conventional spin-deposit techniques to form a planarized surface for deposition of an inorganic layer typically comprising silicon dioxide or silicon nitride. The inorganic layer is etched using standard photoresist techniques to form an inorganic mask for etching the polymer layer. A previously deposited inorganic layer functions as an etch stop to allow long over etches to achieve full external contacts which, in turn, allows high density interconnect systems on multiple levels.
摘要翻译： 一种用于将集成电路中的复合介电层集成以便于制造具有外部触点的高密度多级互连的系统。 复合介电层包括聚合物层，其通常包含使用常规自旋沉积技术沉积的聚酰亚胺，以形成通常包含二氧化硅或氮化硅的无机层的平坦化表面。 使用标准光刻胶技术蚀刻无机层以形成用于蚀刻聚合物层的无机掩模。 先前沉积的无机层用作蚀刻停止件，以允许长时间的蚀刻以实现完全的外部触点，这反过来允许在多个等级上的高密度互连系统。
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公开(公告)号：US5084414A
公开(公告)日：1992-01-28
申请号：US560476
申请日：1990-07-27
申请人： Robert B. Manley , Mark D. Crook
发明人： Robert B. Manley , Mark D. Crook
IPC分类号： H01L21/768 , H01L23/522
CPC分类号： H01L23/5226 , H01L21/76879 , H01L2924/0002
摘要： A process is described for electrically interconnecting electronic devices located on a surface through one or more planar linking layers consisting of conductors and dielectrics. A three-step additive process is disclosed for forming each planar linking layer. The process may be repeated in order to form the multiple linking layers required for complex VLSI circuits. Each layer is formed by a three step process of applying a uniform dielectric, removing the dielectric where the interconnections, including vias and lines, are to be made and then selectively depositing a conductor to form the interconnections.
摘要翻译： 描述了一种用于通过一个或多个由导体和电介质组成的平面连接层来电连接位于表面上的电子器件的工艺。 公开了用于形成每个平面连接层的三步添加方法。 可以重复该过程以形成复杂VLSI电路所需的多个连接层。 每个层通过施加均匀电介质的三步工艺形成，去除电介质，其中将形成包括通孔和线的互连，然后选择性地沉积导体以形成互连。
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公开(公告)号：US20090081822A1
公开(公告)日：2009-03-26
申请号：US12273123
申请日：2008-11-18
IPC分类号： H01L21/02
CPC分类号： H01L27/1462 , H01L27/14627 , H01L27/14629 , H01L27/14685
摘要： A semiconductor integrated circuit structure and method for fabricating. The semiconductor integrated circuit structure includes a light sensitive device integral with a semiconductor substrate, a cover dielectric layer disposed over the light sensitive device, and a lens-formation dielectric layer disposed over the cover dielectric layer. Light is transmittable though the cover dielectric layer, and through the lens-formation dielectric layer. The lens-formation dielectric layer forms an embedded convex microlens. The microlens directs light onto the light sensitive device.
摘要翻译： 一种半导体集成电路结构及其制造方法。 半导体集成电路结构包括与半导体衬底整体的光敏器件，设置在光敏器件上的覆盖电介质层，以及设置在覆盖电介质层上的透镜形成电介质层。 光通过覆盖电介质层透过透镜形成电介质层。 透镜形成电介质层形成嵌入的凸形微透镜。 微透镜将光引导到光敏设备上。
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公开(公告)号：US07704780B2
公开(公告)日：2010-04-27
申请号：US12273123
申请日：2008-11-18
IPC分类号： H01L21/00
CPC分类号： H01L27/1462 , H01L27/14627 , H01L27/14629 , H01L27/14685
摘要： A semiconductor integrated circuit structure and method for fabricating. The semiconductor integrated circuit structure includes a light sensitive device integral with a semiconductor substrate, a cover dielectric layer disposed over the light sensitive device, and a lens-formation dielectric layer disposed over the cover dielectric layer. Light is transmittable though the cover dielectric layer, and through the lens-formation dielectric layer. The lens-formation dielectric layer forms an embedded convex microlens. The microlens directs light onto the light sensitive device.
摘要翻译： 一种半导体集成电路结构及其制造方法。 半导体集成电路结构包括与半导体衬底整体的光敏器件，设置在光敏器件上的覆盖电介质层，以及设置在覆盖电介质层上的透镜形成电介质层。 光通过覆盖电介质层透过透镜形成电介质层。 透镜形成电介质层形成嵌入的凸形微透镜。 微透镜将光引导到光敏设备上。
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公开(公告)号：US07208783B2
公开(公告)日：2007-04-24
申请号：US10984670
申请日：2004-11-09
IPC分类号： H01L27/148 , H01L29/768
CPC分类号： H01L27/1462 , H01L27/14627 , H01L27/14629 , H01L27/14685
摘要： A semiconductor integrated circuit structure and method for fabricating. The semiconductor integrated circuit structure includes a light sensitive device integral with a semiconductor substrate, a cover dielectric layer disposed over the light sensitive device, and a lens-formation dielectric layer disposed over the cover dielectric layer. Light is transmittable though the cover dielectric layer; and through the lens-formation dielectric layer. The lens-formation dielectric layer forms an embedded convex microlens. The microlens directs light onto the light sensitive device.
摘要翻译： 一种半导体集成电路结构及其制造方法。 半导体集成电路结构包括与半导体衬底整体的光敏器件，设置在光敏器件上的覆盖电介质层，以及设置在覆盖电介质层上的透镜形成电介质层。 光通过覆盖电介质层可传输; 并透过透镜形成电介质层。 透镜形成电介质层形成嵌入的凸形微透镜。 微透镜将光引导到光敏设备上。
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8.发明授权Shallow semiconductor sensor with fluorescent molecule layer that eliminates optical and electronic crosstalk 有权具有荧光分子层的浅半导体传感器消除了光和电子串扰公开(公告)号：US07768084B2
公开(公告)日：2010-08-03
申请号：US11443162
申请日：2006-05-31
IPC分类号： H01L31/058
CPC分类号： H01L27/1463 , H01L27/14654
摘要： A semiconductor sensor including a plurality of pixels, each of which includes a fluorescent molecule layer and a photosensitive layer. The fluorescent molecule layer converts light incident on the pixel to surface plasmons. The photosensitive layer generates a light detection signal representative of an intensity of light incident on the pixel in response to the surface plasmons in a region of the sensor which is close enough to the surface of the pixels that electronic crosstalk between the pixels does not occur.
摘要翻译： 一种半导体传感器，包括多个像素，每个像素包括荧光分子层和感光层。 荧光分子层将入射到像素上的光转换成表面等离子体激元。 感光层响应于传感器的区域中的表面等离子体，产生表示入射在像素上的光的强度的光检测信号，该区域足够靠近像素的表面，不会发生像素之间的电子串扰。
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公开(公告)号：US07459733B2
公开(公告)日：2008-12-02
申请号：US11716863
申请日：2007-03-12
IPC分类号： H01L27/148
CPC分类号： H01L27/1462 , H01L27/14627 , H01L27/14629 , H01L27/14685
摘要： A semiconductor integrated circuit structure and method for fabricating. The semiconductor integrated circuit structure includes a light sensitive device integral with a semiconductor substrate, a cover dielectric layer disposed over the light sensitive device, and a lens-formation dielectric layer disposed over the cover dielectric layer. Light is transmittable through the cover dielectric layer; and through the lens-formation dielectric layer. The lens-formation dielectric layer forms an embedded convex microlens. The microlens directs light onto the light sensitive device.
摘要翻译： 一种半导体集成电路结构及其制造方法。 半导体集成电路结构包括与半导体衬底整体的光敏器件，设置在光敏器件上的覆盖电介质层，以及设置在覆盖电介质层上的透镜形成电介质层。 光通过覆盖电介质层可传输; 并透过透镜形成电介质层。 透镜形成电介质层形成嵌入的凸形微透镜。 微透镜将光引导到光敏设备上。
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10.发明申请Shallow semiconductor sensor with fluorescent molecule layer that eliminates optical and electronic crosstalk 有权具有荧光分子层的浅半导体传感器消除了光和电子串扰公开(公告)号：US20070278607A1
公开(公告)日：2007-12-06
申请号：US11443162
申请日：2006-05-31
IPC分类号： H01L31/00
CPC分类号： H01L27/1463 , H01L27/14654
摘要： A shallow semiconductor sensor with a fluorescent molecule layer that eliminates optical and electronic crosstalk.
摘要翻译： 具有消除光学和电子串扰的荧光分子层的浅半导体传感器。
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