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172 条记录 (耗时 0.052 秒)

    Device To Hub Repair Of A Redundant Star Network
    3.
    发明申请
    Device To Hub Repair Of A Redundant Star Network 审中-公开

    公开(公告)号：US20170337049A1

    公开(公告)日：2017-11-23

    申请号：US15156663

    申请日：2016-05-17

    申请人： David R. Hall ,  Mark D. Hall ,  Craig Boswell ,  Jedediah Knight

    发明人： David R. Hall ,  Mark D. Hall ,  Craig Boswell ,  Jedediah Knight

    IPC分类号： G06F9/445 ,  H04W4/00 ,  H04L27/12 ,  H04W24/04 ,  H04B1/69

    CPC分类号： H04W24/04 ,  H04L12/2834 ,  H04L43/0817 ,  H04L43/10 ,  H04W4/50

    摘要： A redundant star network is disclosed. The network includes a peripheral device (PD), a control hub, and a backup hub. The control hub and backup hub each have a wireless long range transceiver, hardware processors, and hardware memory. The PD includes a wireless long range transceiver and a microcontroller. The control hub and backup hub hardware memories store system operation information. The system operation information includes instructions for controlling the PD. The PD microcontroller includes test firmware and update firmware. The test firmware instructs the PD to test the control hub and to listen for a test response signal indicating the control hub is operational. The PD update firmware instructs the PD to switch control of the PD to the backup hub when the test response signal is not received within an expected response timeframe after the test signal is sent.

    METHOD FOR FORMING A SPLIT-GATE DEVICE
    8.
    发明申请
    METHOD FOR FORMING A SPLIT-GATE DEVICE 有权
    形成分闸装置的方法

    公开(公告)号：US20150279854A1

    公开(公告)日：2015-10-01

    申请号：US14228678

    申请日：2014-03-28

    申请人： MARK D. HALL ,  Mehul D. Shroff

    发明人： MARK D. HALL ,  Mehul D. Shroff

    IPC分类号： H01L27/115 ,  H01L21/306 ,  H01L21/321 ,  H01L21/3105 ,  H01L29/423 ,  H01L29/49 ,  H01L29/51 ,  H01L21/311 ,  H01L21/28 ,  H01L29/66

    CPC分类号： H01L27/11568 ,  H01L21/31051 ,  H01L27/11534 ,  H01L27/11573 ,  H01L29/42328 ,  H01L29/42332 ,  H01L29/42344 ,  H01L29/4916 ,  H01L29/511 ,  H01L29/66545 ,  H01L29/66825 ,  H01L29/66833 ,  H01L29/7881

    摘要： Forming a semiconductor device in an NVM region and in a logic region using a semiconductor substrate includes forming a dielectric layer and forming a first gate material layer over the dielectric layer. In the logic region, a high-k dielectric and a barrier layer are formed. A second gate material layer is formed over the barrier and the first material layer. Patterning results in gate-region fill material over the NVM region and a logic stack comprising a portion of the second gate material layer and a portion of the barrier layer in the logic region. An opening in the gate-region fill material leaves a select gate formed from a portion of the gate-region fill material adjacent to the opening. A control gate is formed in the opening over a charge storage layer. The portion of the second gate material layer is replaced with a metallic logic gate.

    摘要翻译： 在NVM区域和使用半导体衬底的逻辑区域中形成半导体器件包括形成电介质层并在电介质层上形成第一栅极材料层。 在逻辑区域中，形成高k电介质和阻挡层。 在阻挡层和第一材料层之上形成第二栅极材料层。 图案化导致NVM区域上的栅极区域填充材料和包括第二栅极材料层的一部分和逻辑区域中的势垒层的一部分的逻辑堆叠。 栅极填充材料中的开口离开由与开口相邻的栅极 - 区域填充材料的一部分形成的选择栅极。 在电荷存储层上的开口中形成控制栅极。 第二栅极材料层的部分被金属逻辑门替代。

    Applications for nanopillar structures
    10.
    发明授权
    Applications for nanopillar structures 有权
    纳米柱结构的应用

    公开(公告)号：US08951892B2

    公开(公告)日：2015-02-10

    申请号：US13539070

    申请日：2012-06-29

    申请人： Mark D. Hall ,  Mehul D. Shroff

    发明人： Mark D. Hall ,  Mehul D. Shroff

    IPC分类号： H01L21/02 ,  H01L29/66 ,  B82Y40/00

    CPC分类号： H01L29/0676 ,  B60C23/00 ,  B81B1/00 ,  B81B2203/0361 ,  B82Y20/00 ,  B82Y30/00 ,  B82Y40/00 ,  G01L9/06 ,  G01N33/0031 ,  G02B6/107 ,  G02B6/126 ,  G02B2006/12097 ,  H01L21/3086 ,  H01L29/0665 ,  H01L29/66 ,  H01L33/18 ,  H01L41/1132 ,  H01L43/02

    摘要： A disclosed method of fabricating a hybrid nanopillar device includes forming a mask on a substrate and a layer of nanoclusters on the hard mask. The hard mask is then etched to transfer a pattern formed by the first layer of nanoclusters into a first region of the hard mask. A second nanocluster layer is formed on the substrate. A second region of the hard mask overlying a second region of the substrate is etched to create a second pattern in the hard mask. The substrate is then etched through the hard mask to form a first set of nanopillars in the first region of the substrate and a second set of nanopillars in the second region of the substrate. By varying the nanocluster deposition steps between the first and second layers of nanoclusters, the first and second sets of nanopillars will exhibit different characteristics.

    摘要翻译： 公开的制造混合纳米柱装置的方法包括在基底上形成掩模和硬掩模上的纳米团簇层。 然后蚀刻硬掩模以将由第一层纳米团簇形成的图案转移到硬掩模的第一区域中。 在基板上形成第二纳米团簇层。 蚀刻覆盖衬底的第二区域的硬掩模的第二区域，以在硬掩模中产生第二图案。 然后将衬底通过硬掩模蚀刻以在衬底的第一区域中形成第一组纳米柱，并在衬底的第二区域中形成第二组纳米柱。 通过改变第一和第二层纳米团簇之间的纳米团簇沉积步骤，第一组和第二组纳米颗粒将呈现不同的特征。