公开(公告)号：US10541014B2

公开(公告)日：2020-01-21

申请号：US15779029

申请日：2015-12-24

申请人： Brian S. Doyle ,  Elijah V. Karpov ,  Kaan Oguz ,  Kevin P. O'Brien ,  Charles C. Kuo ,  Mark L. Doczy ,  Uday Shah ,  Yih Wang

发明人： Brian S. Doyle ,  Elijah V. Karpov ,  Kaan Oguz ,  Kevin P. O'Brien ,  Charles C. Kuo ,  Mark L. Doczy ,  Uday Shah ,  Yih Wang

IPC分类号： G11C11/16 ,  H01L43/08 ,  G11C11/56 ,  H01L27/22

摘要： Memory cells with improved tunneling magnetoresistance ratio (TMR) are disclosed. In some embodiments such devices may include a magnetoresistive tunnel junction (MTJ) element coupled in series with a tunneling magnetoresistance enhancement element (TMRE). The MTJ element and TMRE may each be configured to transition between high and low resistance states, e.g., in response to a voltage. In some embodiments, the MTJ and TMRE are configure such that when a read voltage is applied to the cell while the MTJ is in its low resistance state the TMRE is driven to is low resistance state, and when such voltage is applied while the MTJ is in its high resistance state, the TMRE remains in its high resistance state. Devices and systems including such memory cells are also disclosed.

公开(公告)号：US20190140166A1

公开(公告)日：2019-05-09

申请号：US16097801

申请日：2016-07-01

申请人： MD Tofizur RAHMAN ,  Christopher J. WIEGAND ,  Brian MAERTZ ,  Daniel G. OUELLETTE ,  Kaan OGUZ ,  Brian S. DOYLE ,  Mark L. DOCZY ,  Daniel B. BERGSTROM ,  Justin S. BROCKMAN ,  Oleg GOLONZKA ,  Tahhir GHANI ,  Intel Corporation

发明人： MD Tofizur RAHMAN ,  Christopher J. WIEGAND ,  Brian MAERTZ ,  Daniel G. OUELLETTE ,  Kevin P. O'BRIEN ,  Kaan OGUZ ,  Brian S. DOYLE ,  Mark L. DOCZY ,  Daniel B. BERGSTROM ,  Justin S. BROCKMAN ,  Oleg GOLONZKA ,  Tahir GHANI

IPC分类号： H01L43/12 ,  H01L43/10 ,  H01L43/08 ,  H01L43/02 ,  G11C11/16

CPC分类号： H01L43/12 ,  G11C11/161 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

摘要： Material layer stack structures to provide a magnetic tunnel junction (MTJ) having improved perpendicular magnetic anisotropy (PMA) characteristics. In an embodiment, a free magnetic layer of the material layer stack is disposed between a tunnel barrier layer and a cap layer of magnesium oxide (Mg). The free magnetic layer includes a Cobalt-Iron-Boron (CoFeB) body substantially comprised of a combination of Cobalt atoms, Iron atoms and Boron atoms. A first Boron mass fraction of the CoFeB body is equal to or more than 25% (e.g., equal to or more than 27%) in a first region which adjoins an interface of the free magnetic layer with the tunnel barrier layer. In another embodiment, the first Boron mass fraction is more than a second Boron mass fraction in a second region of the CoFeB body which adjoins an interface of the free magnetic layer with the cap layer.

公开(公告)号：US09214215B2

公开(公告)日：2015-12-15

申请号：US14431607

申请日：2013-06-10

申请人： Elijah V. Karpov ,  Brian S. Doyle ,  Kaan Oguz ,  Satyarth Suri ,  Robert S. Chau ,  Charles S. Kuo ,  Mark L. Doczy ,  David L. Kencke

发明人： Elijah V. Karpov ,  Brian S. Doyle ,  Kaan Oguz ,  Satyarth Suri ,  Robert S. Chau ,  Charles S. Kuo ,  Mark L. Doczy ,  David L. Kencke

IPC分类号： G11C11/00 ,  G11C11/16 ,  H01L43/02 ,  H01L43/08 ,  H01L27/22 ,  G11C11/56

CPC分类号： G11C11/1675 ,  B82Y25/00 ,  G11C11/15 ,  G11C11/16 ,  G11C11/161 ,  G11C11/5607 ,  H01F10/3254 ,  H01L27/222 ,  H01L43/02 ,  H01L43/08

摘要： Switching current in Spin-Transfer Torque Memory (STTM) can be decreased. A magnetic memory cell is driven with a first pulse on a write line of the memory cell to heat the cell. The cell is then driven with a second pulse on the write line to set the state of the cell.

摘要翻译： 旋转转矩存储器（STTM）中的切换电流可以减小。 磁存储单元用存储单元的写入线上的第一个脉冲驱动，以加热单元。 然后在写入线上用第二个脉冲驱动单元以设置单元的状态。

公开(公告)号：US20150333252A1

公开(公告)日：2015-11-19

申请号：US14812655

申请日：2015-07-29

申请人： Brian S. Doyle ,  David L. Kencke ,  Charles C. Kuo ,  Uday Shah ,  Kaan Oguz ,  Mark L. Doczy ,  Satyarth Suri ,  Clair Webb

发明人： Brian S. Doyle ,  David L. Kencke ,  Charles C. Kuo ,  Uday Shah ,  Kaan Oguz ,  Mark L. Doczy ,  Satyarth Suri ,  Clair Webb

IPC分类号： H01L43/02 ,  H01L43/08 ,  H01L27/22 ,  H01L43/10 ,  G11C11/16

CPC分类号： H01L43/12 ,  G11C11/161 ,  G11C11/1659 ,  H01L27/222 ,  H01L27/228 ,  H01L29/66007 ,  H01L29/82 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

摘要： Perpendicular spin transfer torque memory (STTM) devices having offset cells and methods of fabricating perpendicular STTM devices having offset cells are described. For example, a spin torque transfer memory (STTM) array includes a first load line disposed above a substrate and having only a first STTM device. The STTM array also includes a second load line disposed above the substrate, adjacent the first load line, and having only a second STTM device, the second STTM device non-co-planar with the first STTM device.

摘要翻译： 描述具有偏移单元的垂直自旋转移转矩存储器（STTM）器件和制造具有偏置单元的垂直STTM器件的方法。 例如，自旋转矩传递存储器（STTM）阵列包括设置在衬底上方并且仅具有第一STTM器件的第一负载线。 STTM阵列还包括设置在基板上方的第二负载线，与第一负载线相邻，并且仅具有第二STTM器件，与第一STTM器件非共面的第二STTM器件。

公开(公告)号：US09054302B2

公开(公告)日：2015-06-09

申请号：US14313690

申请日：2014-06-24

申请人： Brian S. Doyle ,  Charles C. Kuo ,  Kaan Oguz ,  Uday Shah ,  Elijah V. Karpov ,  Roksana Golizadeh Mojarad ,  Mark L. Doczy ,  Robert S. Chau

发明人： Brian S. Doyle ,  Charles C. Kuo ,  Kaan Oguz ,  Uday Shah ,  Elijah V. Karpov ,  Roksana Golizadeh Mojarad ,  Mark L. Doczy ,  Robert S. Chau

IPC分类号： H01L21/00 ,  H01L43/12 ,  H01L43/08 ,  H01F10/32 ,  H01L43/10 ,  H01L27/22

CPC分类号： H01L43/10 ,  G11C11/161 ,  G11C11/18 ,  H01F10/14 ,  H01F10/16 ,  H01F10/1936 ,  H01F10/3236 ,  H01F10/3286 ,  H01F10/329 ,  H01L27/226 ,  H01L27/228 ,  H01L43/02 ,  H01L43/08 ,  H01L43/12

摘要： Perpendicular spin transfer torque memory (STTM) devices with enhanced stability and methods of fabricating perpendicular STTM devices with enhanced stability are described. For example, a material layer stack for a magnetic tunneling junction includes a fixed magnetic layer. A dielectric layer is disposed above the fixed magnetic layer. A free magnetic layer is disposed above the dielectric layer. A conductive oxide material layer is disposed on the free magnetic layer.

摘要翻译： 描述了具有增强的稳定性的垂直自旋转移转矩存储器（STTM）装置和制造具有增强的稳定性的垂直STTM装置的方法。 例如，用于磁隧道结的材料层堆叠包括固定磁性层。 电介质层设置在固定磁性层的上方。 自由磁性层设置在电介质层的上方。 导电氧化物材料层设置在自由磁性层上。

公开(公告)号：US09048314B2

公开(公告)日：2015-06-02

申请号：US14465636

申请日：2014-08-21

申请人： Robert S. Chau ,  Suman Datta ,  Jack Kavalieros ,  Justin K. Brask ,  Mark L. Doczy ,  Matthew Metz

发明人： Robert S. Chau ,  Suman Datta ,  Jack Kavalieros ,  Justin K. Brask ,  Mark L. Doczy ,  Matthew Metz

IPC分类号： H01L29/66 ,  H01L29/78 ,  H01L29/786 ,  H01L29/267 ,  H01L29/10 ,  H01L29/20 ,  H01L29/423 ,  H01L29/51

CPC分类号： H01L29/7848 ,  H01L29/0649 ,  H01L29/0847 ,  H01L29/1033 ,  H01L29/16 ,  H01L29/20 ,  H01L29/201 ,  H01L29/207 ,  H01L29/267 ,  H01L29/41783 ,  H01L29/4236 ,  H01L29/452 ,  H01L29/517 ,  H01L29/66522 ,  H01L29/66628 ,  H01L29/66636 ,  H01L29/66795 ,  H01L29/78 ,  H01L29/7827 ,  H01L29/7836 ,  H01L29/785 ,  H01L29/78603 ,  H01L29/78618 ,  H01L29/78681

摘要： A transistor having a narrow bandgap semiconductor source/drain region is described. The transistor includes a gate electrode formed on a gate dielectric layer formed on a silicon layer. A pair of source/drain regions are formed on opposite sides of the gate electrode wherein said pair of source/drain regions comprise a narrow bandgap semiconductor film formed in the silicon layer on opposite sides of the gate electrode.

公开(公告)号：US08913422B2

公开(公告)日：2014-12-16

申请号：US13630896

申请日：2012-09-28

申请人： Elijah V. Karpov ,  Brian S. Doyle ,  Kaan Oguz ,  Satyarth Suri ,  Robert S. Chau ,  Charles C. Kuo ,  Mark L. Doczy ,  David L. Kencke

发明人： Elijah V. Karpov ,  Brian S. Doyle ,  Kaan Oguz ,  Satyarth Suri ,  Robert S. Chau ,  Charles C. Kuo ,  Mark L. Doczy ,  David L. Kencke

IPC分类号： G11C11/00 ,  G11C11/16 ,  G11C11/15 ,  G11C11/56 ,  H01L27/22 ,  H01F10/32 ,  B82Y25/00

CPC分类号： G11C11/1675 ,  B82Y25/00 ,  G11C11/15 ,  G11C11/16 ,  G11C11/161 ,  G11C11/5607 ,  H01F10/3254 ,  H01L27/222 ,  H01L43/02 ,  H01L43/08

摘要： Switching current in Spin-Transfer Torque Memory (STTM) can be decreased. A magnetic memory cell is driven with a first pulse on a write line of the memory cell to heat the cell. The cell is then driven with a second pulse on the write line to set the state of the cell.

摘要翻译： 旋转转矩存储器（STTM）中的切换电流可以减小。 磁存储单元用存储单元的写入线上的第一个脉冲驱动，以加热单元。 然后在写入线上用第二个脉冲驱动单元以设置单元的状态。

公开(公告)号：US20140308760A1

公开(公告)日：2014-10-16

申请号：US14313690

申请日：2014-06-24

申请人： Brian S. Doyle ,  Charles C. Kuo ,  Kaan Oguz ,  Uday Shah ,  Elijah V. Karpov ,  Roksana Golizadeh Mojarad ,  Mark L. Doczy ,  Robert S. Chau

发明人： Brian S. Doyle ,  Charles C. Kuo ,  Kaan Oguz ,  Uday Shah ,  Elijah V. Karpov ,  Roksana Golizadeh Mojarad ,  Mark L. Doczy ,  Robert S. Chau

IPC分类号： H01L43/12

CPC分类号： H01L43/10 ,  G11C11/161 ,  G11C11/18 ,  H01F10/14 ,  H01F10/16 ,  H01F10/1936 ,  H01F10/3236 ,  H01F10/3286 ,  H01F10/329 ,  H01L27/226 ,  H01L27/228 ,  H01L43/02 ,  H01L43/08 ,  H01L43/12

摘要： Perpendicular spin transfer torque memory (STTM) devices with enhanced stability and methods of fabricating perpendicular STTM devices with enhanced stability are described. For example, a material layer stack for a magnetic tunneling junction includes a fixed magnetic layer. A dielectric layer is disposed above the fixed magnetic layer. A free magnetic layer is disposed above the dielectric layer. A conductive oxide material layer is disposed on the free magnetic layer.

公开(公告)号：US08796797B2

公开(公告)日：2014-08-05

申请号：US13723893

申请日：2012-12-21

申请人： Brian S. Doyle ,  Charles C. Kuo ,  Kaan Oguz ,  Uday Shah ,  Elijah V. Karpov ,  Roksana Golizadeh Mojarad ,  Mark L. Doczy ,  Robert S. Chau

发明人： Brian S. Doyle ,  Charles C. Kuo ,  Kaan Oguz ,  Uday Shah ,  Elijah V. Karpov ,  Roksana Golizadeh Mojarad ,  Mark L. Doczy ,  Robert S. Chau

IPC分类号： H01L29/82

CPC分类号： H01L43/10 ,  G11C11/161 ,  G11C11/18 ,  H01F10/14 ,  H01F10/16 ,  H01F10/1936 ,  H01F10/3236 ,  H01F10/3286 ,  H01F10/329 ,  H01L27/226 ,  H01L27/228 ,  H01L43/02 ,  H01L43/08 ,  H01L43/12

摘要： Perpendicular spin transfer torque memory (STTM) devices with enhanced stability and methods of fabricating perpendicular STTM devices with enhanced stability are described. For example, a material layer stack for a magnetic tunneling junction includes a fixed magnetic layer. A dielectric layer is disposed above the fixed magnetic layer. A free magnetic layer is disposed above the dielectric layer. A conductive oxide material layer is disposed on the free magnetic layer.

摘要翻译： 描述了具有增强的稳定性的垂直自旋转移转矩存储器（STTM）装置和制造具有增强的稳定性的垂直STTM装置的方法。 例如，用于磁隧道结的材料层堆叠包括固定磁性层。 电介质层设置在固定磁性层的上方。 自由磁性层设置在电介质层的上方。 导电氧化物材料层设置在自由磁性层上。

公开(公告)号：US20140175575A1

公开(公告)日：2014-06-26

申请号：US13723893

申请日：2012-12-21

申请人： Brian S. Doyle ,  Charles C. Kuo ,  Kaan Oguz ,  Uday Shah ,  Elijah V. Karpov ,  Roksana Golizadeh Mojarad ,  Mark L. Doczy ,  Robert S. Chau

发明人： Brian S. Doyle ,  Charles C. Kuo ,  Kaan Oguz ,  Uday Shah ,  Elijah V. Karpov ,  Roksana Golizadeh Mojarad ,  Mark L. Doczy ,  Robert S. Chau

IPC分类号： H01L29/82

CPC分类号： H01L43/10 ,  G11C11/161 ,  G11C11/18 ,  H01F10/14 ,  H01F10/16 ,  H01F10/1936 ,  H01F10/3236 ,  H01F10/3286 ,  H01F10/329 ,  H01L27/226 ,  H01L27/228 ,  H01L43/02 ,  H01L43/08 ,  H01L43/12

摘要： Perpendicular spin transfer torque memory (STTM) devices with enhanced stability and methods of fabricating perpendicular STTM devices with enhanced stability are described. For example, a material layer stack for a magnetic tunneling junction includes a fixed magnetic layer. A dielectric layer is disposed above the fixed magnetic layer. A free magnetic layer is disposed above the dielectric layer. A conductive oxide material layer is disposed on the free magnetic layer.

摘要翻译： 描述了具有增强的稳定性的垂直自旋转移转矩存储器（STTM）装置和制造具有增强的稳定性的垂直STTM装置的方法。 例如，用于磁隧道结的材料层堆叠包括固定磁性层。 电介质层设置在固定磁性层的上方。 自由磁性层设置在电介质层的上方。 导电氧化物材料层设置在自由磁性层上。