公开(公告)号：US08951348B1

公开(公告)日：2015-02-10

申请号：US13370579

申请日：2012-02-10

申请人： Krishnan Shrinivasan ,  Feng Wang ,  George Kamian ,  Steve Gentile ,  Mark Yam

发明人： Krishnan Shrinivasan ,  Feng Wang ,  George Kamian ,  Steve Gentile ,  Mark Yam

IPC分类号： C23C16/50 ,  C23C16/00 ,  C23F1/00 ,  H01L21/306

CPC分类号： C23C16/56 ,  H01L21/67109 ,  H01L21/67115

摘要： The present invention relates to curing of semiconductor wafers. More particularly, the invention relates to cure chambers containing multiple cure stations, each featuring one or more UV light sources. The wafers are cured by sequential exposure to the light sources in each station. In some embodiments, the wafers remain stationary with respect to the light source during exposure. In other embodiments, there is relative movement between the light source and the wafer during exposure. The invention also provides chambers that may be used to independently modulate the cross-linking, density and increase in stress of a cured material by providing independent control of the wafer temperature and UV intensity.

摘要翻译： 本发明涉及半导体晶片的固化。 更具体地，本发明涉及包含多个固化站的固化室，每个固化站具有一个或多个UV光源。 通过在每个站中顺序地暴露于光源来固化晶片。 在一些实施例中，晶片在曝光期间相对于光源保持静止。 在其它实施例中，在曝光期间在光源和晶片之间存在相对运动。 本发明还提供了可以通过提供对晶片温度和UV强度的独立控制来独立地调节固化材料的交联，密度和增加应力的室。

公开(公告)号：US08907247B2

公开(公告)日：2014-12-09

申请号：US13485752

申请日：2012-05-31

申请人： Dean Jennings ,  Haifan Liang ,  Mark Yam ,  Vijay Parihar ,  Abhilash J. Mayur ,  Aaron Hunter ,  Bruce Adams ,  Joseph Michael Ranish

发明人： Dean Jennings ,  Haifan Liang ,  Mark Yam ,  Vijay Parihar ,  Abhilash J. Mayur ,  Aaron Hunter ,  Bruce Adams ,  Joseph Michael Ranish

IPC分类号： B23K26/06 ,  B23K26/073 ,  B23K26/00 ,  H01L21/268 ,  H01L21/324 ,  H01L21/20

CPC分类号： B23K26/0608 ,  B23K26/0604 ,  B23K26/0613 ,  B23K26/073 ,  B23K26/0732 ,  B23K26/0736 ,  B23K26/0738 ,  B23K26/352 ,  H01L21/02675 ,  H01L21/2026 ,  H01L21/268 ,  H01L21/324

摘要： A thermal processing apparatus and method in which a first laser source, for example, a CO2 emitting at 10.6 μm is focused onto a silicon wafer as a line beam and a second laser source, for example, a GaAs laser bar emitting at 808 nm is focused onto the wafer as a larger beam surrounding the line beam. The two beams are scanned in synchronism in the direction of the narrow dimension of the line beam to create a narrow heating pulse from the line beam when activated by the larger beam. The energy of GaAs radiation is greater than the silicon bandgap energy and creates free carriers. The energy of the CO2 radiation is less than the silicon bandgap energy so silicon is otherwise transparent to it, but the long wavelength radiation is absorbed by the free carriers.

摘要翻译： 一种热处理装置和方法，其中第一激光源例如以10.6μm发射的CO 2作为线束聚焦在硅晶片上，并且第二激光源例如在808nm处发射的GaAs激光棒是 作为围绕线束的较大波束聚焦在晶片上。 沿着线束的窄尺寸的方向同步地扫描两个光束，以在由较大的光束激活时从线束产生窄的加热脉冲。 GaAs辐射的能量大于硅带隙能量，并产生自由载流子。 CO2辐射的能量小于硅带隙能量，因此硅对其透明度不变，但长波长辐射被自由载流子吸收。

公开(公告)号：US20120234800A1

公开(公告)日：2012-09-20

申请号：US13485666

申请日：2012-05-31

申请人： Dean JENNINGS ,  Haifan LIANG ,  Mark YAM ,  Vijay PARIHAR ,  Abhilash J. MAYUR ,  Aaron HUNTER ,  Bruce ADAMS ,  Joseph Michael RANISH

发明人： Dean JENNINGS ,  Haifan LIANG ,  Mark YAM ,  Vijay PARIHAR ,  Abhilash J. MAYUR ,  Aaron HUNTER ,  Bruce ADAMS ,  Joseph Michael RANISH

IPC分类号： B23K26/00

CPC分类号： B23K26/0608 ,  B23K26/0604 ,  B23K26/0613 ,  B23K26/073 ,  B23K26/0732 ,  B23K26/0736 ,  B23K26/0738 ,  B23K26/352 ,  H01L21/02675 ,  H01L21/2026 ,  H01L21/268 ,  H01L21/324

摘要： A thermal processing apparatus and method in which a first laser source, for example, a CO2 emitting at 10.6 μm is focused onto a silicon wafer as a line beam and a second laser source, for example, a GaAs laser bar emitting at 808 nm is focused onto the wafer as a larger beam surrounding the line beam. The two beams are scanned in synchronism in the direction of the narrow dimension of the line beam to create a narrow heating pulse from the line beam when activated by the larger beam. The energy of GaAs radiation is greater than the silicon bandgap energy and creates free carriers. The energy of the CO2 radiation is less than the silicon bandgap energy so silicon is otherwise transparent to it, but the long wavelength radiation is absorbed by the free carriers.

公开(公告)号：US08242407B2

公开(公告)日：2012-08-14

申请号：US12825200

申请日：2010-06-28

申请人： Dean Jennings ,  Haifan Liang ,  Mark Yam ,  Vijay Parihar ,  Abhilash Mayur ,  Aaron Hunter ,  Bruce Adams ,  Joseph Michael Ranish

发明人： Dean Jennings ,  Haifan Liang ,  Mark Yam ,  Vijay Parihar ,  Abhilash Mayur ,  Aaron Hunter ,  Bruce Adams ,  Joseph Michael Ranish

IPC分类号： B23K26/067

CPC分类号： B23K26/0608 ,  B23K26/0604 ,  B23K26/0613 ,  B23K26/073 ,  B23K26/0732 ,  B23K26/0736 ,  B23K26/0738 ,  B23K26/352 ,  H01L21/02675 ,  H01L21/2026 ,  H01L21/268 ,  H01L21/324

摘要： A thermal processing apparatus and method in which a first laser source, for example, a CO2 emitting at 10.6 μm is focused onto a silicon wafer as a line beam and a second laser source, for example, a GaAs laser bar emitting at 808 nm is focused onto the wafer as a larger beam surrounding the line beam. The two beams are scanned in synchronism in the direction of the narrow dimension of the line beam to create a narrow heating pulse from the line beam when activated by the larger beam. The energy of GaAs radiation is greater than the silicon bandgap energy and creates free carriers. The energy of the CO2 radiation is less than the silicon bandgap energy so silicon is otherwise transparent to it, but the long wavelength radiation is absorbed by the free carriers.

摘要翻译： 一种热处理装置和方法，其中第一激光源例如以10.6μm发射的CO 2作为线束聚焦在硅晶片上，并且第二激光源例如在808nm处发射的GaAs激光棒是 作为围绕线束的较大波束聚焦在晶片上。 沿着线束的窄尺寸的方向同步地扫描两个光束，以在由较大的光束激活时从线束产生窄的加热脉冲。 GaAs辐射的能量大于硅带隙能量，并产生自由载流子。 CO2辐射的能量小于硅带隙能量，因此硅对其透明度不变，但长波长辐射被自由载流子吸收。

公开(公告)号：US08178819B2

公开(公告)日：2012-05-15

申请号：US11079785

申请日：2005-03-14

申请人： Dean C. Jennings ,  Mark Yam ,  Abhilash J. Mayur ,  Vernon Behrens ,  Paul A. O'Brien ,  Leonid M. Tertitski ,  Alexander Goldin

发明人： Dean C. Jennings ,  Mark Yam ,  Abhilash J. Mayur ,  Vernon Behrens ,  Paul A. O'Brien ,  Leonid M. Tertitski ,  Alexander Goldin

IPC分类号： B23K26/08 ,  B23K26/10

CPC分类号： H01L21/02683 ,  B23K26/032 ,  B23K26/034 ,  B23K26/04 ,  B23K26/0608 ,  B23K26/064 ,  B23K26/0643 ,  B23K26/0648 ,  B23K26/0652 ,  B23K26/0665 ,  B23K26/0738 ,  B23K26/082 ,  B23K26/083 ,  B23K26/0838 ,  B23K26/0869 ,  B23K26/123 ,  B23K26/125 ,  B23K26/142 ,  B23K26/32 ,  B23K26/34 ,  B23K26/705 ,  B23K2101/34 ,  B23K2101/40 ,  B23K2103/08 ,  B23K2103/50 ,  C23C8/00 ,  C23C8/10 ,  C23C8/22 ,  C23C16/047 ,  C23C16/481 ,  G02B27/0955 ,  H01L21/00 ,  H01L21/2026 ,  H01L21/67115

摘要： The thermal processing device includes a stage, a continuous wave electromagnetic radiation source, a series of lenses, a translation mechanism, a detection module, a three-dimensional auto-focus, and a computer system. The stage is configured to receive a substrate thereon. The continuous wave electromagnetic radiation source is disposed adjacent the stage, and is configured to emit continuous wave electromagnetic radiation along a path towards the substrate. The series of lenses is disposed between the continuous wave electromagnetic radiation source and the stage, and are configured to condense the continuous wave electromagnetic radiation into a line of continuous wave electromagnetic radiation on a surface of the substrate. The translation mechanism is configured to translate the stage and the line of continuous wave electromagnetic radiation relative to one another. The detection module is positioned within the path, and is configured to detect continuous wave electromagnetic radiation.

摘要翻译： 热处理装置包括平台，连续波电磁辐射源，一系列透镜，平移机构，检测模块，三维自动对焦以及计算机系统。 该台被配置为在其上接收基板。 连续波电磁辐射源被设置在与该台相邻的位置，并且被配置成沿着朝向衬底的路径发射连续波电磁辐射。 该系列透镜设置在连续波电磁辐射源和台之间，并被配置为将连续波电磁辐射冷凝成基片表面上的连续波电磁辐射线。 翻译机构被配置为相对于彼此平移连续波电磁辐射的阶段和线。 检测模块位于路径内，被配置为检测连续波电磁辐射。

公开(公告)号：US20100264123A1

公开(公告)日：2010-10-21

申请号：US12825200

申请日：2010-06-28

申请人： Dean Jennings ,  Haifan Liang ,  Mark Yam ,  Vijay Parihar ,  Abhilash J. Mayur ,  Aaron Hunter ,  Bruce Adams ,  Joseph Michael Ranish

发明人： Dean Jennings ,  Haifan Liang ,  Mark Yam ,  Vijay Parihar ,  Abhilash J. Mayur ,  Aaron Hunter ,  Bruce Adams ,  Joseph Michael Ranish

IPC分类号： B23K26/00

CPC分类号： B23K26/0608 ,  B23K26/0604 ,  B23K26/0613 ,  B23K26/073 ,  B23K26/0732 ,  B23K26/0736 ,  B23K26/0738 ,  B23K26/352 ,  H01L21/02675 ,  H01L21/2026 ,  H01L21/268 ,  H01L21/324

摘要： A thermal processing apparatus and method in which a first laser source, for example, a CO2 emitting at 10.6 μm is focused onto a silicon wafer as a line beam and a second laser source, for example, a GaAs laser bar emitting at 808 nm is focused onto the wafer as a larger beam surrounding the line beam. The two beams are scanned in synchronism in the direction of the narrow dimension of the line beam to create a narrow heating pulse from the line beam when activated by the larger beam. The energy of GaAs radiation is greater than the silicon bandgap energy and creates free carriers. The energy of the CO2 radiation is less than the silicon bandgap energy so silicon is otherwise transparent to it, but the long wavelength radiation is absorbed by the free carriers.

摘要翻译： 一种热处理装置和方法，其中第一激光源例如以10.6μm发射的CO 2作为线束聚焦在硅晶片上，并且第二激光源例如在808nm处发射的GaAs激光棒是 作为围绕线束的较大波束聚焦在晶片上。 沿着线束的窄尺寸的方向同步地扫描两个光束，以在由较大的光束激活时从线束产生窄的加热脉冲。 GaAs辐射的能量大于硅带隙能量，并产生自由载流子。 CO2辐射的能量小于硅带隙能量，因此硅对其透明度不变，但长波长辐射被自由载流子吸收。

公开(公告)号：US07595208B2

公开(公告)日：2009-09-29

申请号：US11837055

申请日：2007-08-10

申请人： Dean Jennings ,  Haifan Liang ,  Mark Yam ,  Vijay Parihar ,  Abhilash Mayur ,  Aaron Hunter ,  Bruce Adams ,  Joseph Michael Ranish

发明人： Dean Jennings ,  Haifan Liang ,  Mark Yam ,  Vijay Parihar ,  Abhilash Mayur ,  Aaron Hunter ,  Bruce Adams ,  Joseph Michael Ranish

IPC分类号： H01L21/00

CPC分类号： B23K26/0608 ,  B23K26/0604 ,  B23K26/0613 ,  B23K26/073 ,  B23K26/0732 ,  B23K26/0736 ,  B23K26/0738 ,  B23K26/352 ,  H01L21/02675 ,  H01L21/2026 ,  H01L21/268 ,  H01L21/324

摘要： A thermal processing apparatus and method in which a first laser source, for example, a CO2 emitting at 10.6 μm is focused onto a silicon wafer as a line beam and a second laser source, for example, a GaAs laser bar emitting at 808 nm is focused onto the wafer as a larger beam surrounding the line beam. The two beams are scanned in synchronism in the direction of the narrow dimension of the line beam to create a narrow heating pulse from the line beam when activated by the larger beam. The energy of GaAs radiation is greater than the silicon bandgap energy and creates free carriers. The energy of the CO2 radiation is less than the silicon bandgap energy so silicon is otherwise transparent to it, but the long wavelength radiation is absorbed by the free carriers.

摘要翻译： 例如，将发射为10.6μm的CO 2的第一激光源聚焦在作为线束的硅晶片上的第一激光源和例如在808nm发射的GaAs激光棒的第二激光源的热处理装置和方法是 作为围绕线束的较大波束聚焦在晶片上。 沿着线束的窄尺寸的方向同步地扫描两个光束，以在由较大的光束激活时从线束产生窄的加热脉冲。 GaAs辐射的能量大于硅带隙能量，并产生自由载流子。 CO2辐射的能量小于硅带隙能量，因此硅对其透明度不变，但长波长辐射被自由载流子吸收。

公开(公告)号：US20070293058A1

公开(公告)日：2007-12-20

申请号：US11837055

申请日：2007-08-10

申请人： Dean JENNINGS ,  Haifan LIANG ,  Mark YAM ,  Vijay PARIHAR ,  Abhilash MAYUR ,  Aaron HUNTER ,  Bruce ADAMS ,  Joseph RANISH

发明人： Dean JENNINGS ,  Haifan LIANG ,  Mark YAM ,  Vijay PARIHAR ,  Abhilash MAYUR ,  Aaron HUNTER ,  Bruce ADAMS ,  Joseph RANISH

IPC分类号： H01L21/00

CPC分类号： B23K26/0608 ,  B23K26/0604 ,  B23K26/0613 ,  B23K26/073 ,  B23K26/0732 ,  B23K26/0736 ,  B23K26/0738 ,  B23K26/352 ,  H01L21/02675 ,  H01L21/2026 ,  H01L21/268 ,  H01L21/324

摘要： A thermal processing apparatus and method in which a first laser source, for example, a CO2 emitting at 10.6 μm is focused onto a silicon wafer as a line beam and a second laser source, for example, a GaAs laser bar emitting at 808 nm is focused onto the wafer as a larger beam surrounding the line beam. The two beams are scanned in synchronism in the direction of the narrow dimension of the line beam to create a narrow heating pulse from the line beam when activated by the larger beam. The energy of GaAs radiation is greater than the silicon bandgap energy and creates free carriers. The energy of the CO2 radiation is less than the silicon bandgap energy so silicon is otherwise transparent to it, but the long wavelength radiation is absorbed by the free carriers.

摘要翻译： 将以10.6μm发光的第一激光源例如CO 2 2作为线束和第二激光源聚焦在硅晶片上的热处理装置和方法，例如， 在808nm处发射的GaAs激光棒作为围绕线束的较大光束聚焦在晶片上。 沿着线束的窄尺寸的方向同步地扫描两个光束，以在由较大的光束激活时从线束产生窄的加热脉冲。 GaAs辐射的能量大于硅带隙能量，并产生自由载流子。 CO 2辐射的能量小于硅带隙能量，因此硅对其透明，但是长波长辐射被自由载流子吸收。

公开(公告)号：US07279721B2

公开(公告)日：2007-10-09

申请号：US11105270

申请日：2005-04-13

申请人： Dean Jennings ,  Haifan Liang ,  Mark Yam ,  Vijay Parihar ,  Abhilash Mayur ,  Aaron Hunter ,  Bruce Adams ,  Joseph Michael Ranish

发明人： Dean Jennings ,  Haifan Liang ,  Mark Yam ,  Vijay Parihar ,  Abhilash Mayur ,  Aaron Hunter ,  Bruce Adams ,  Joseph Michael Ranish

IPC分类号： H01L33/00

CPC分类号： B23K26/0608 ,  B23K26/0604 ,  B23K26/0613 ,  B23K26/073 ,  B23K26/0732 ,  B23K26/0736 ,  B23K26/0738 ,  B23K26/352 ,  H01L21/02675 ,  H01L21/2026 ,  H01L21/268 ,  H01L21/324

摘要： A thermal processing apparatus and method in which a first laser source, for example, a CO2 emitting at 10.6 μm is focused onto a silicon wafer as a line beam and a second laser source, for example, a GaAs laser bar emitting at 808 nm is focused onto the wafer as a larger beam surrounding the line beam. The two beams are scanned in synchronism in the direction of the narrow dimension of the line beam to create a narrow heating pulse from the line beam when activated by the larger beam. The energy of GaAs radiation is greater than the silicon bandgap energy and creates free carriers. The energy of the CO2 radiation is less than the silicon bandgap energy so silicon is otherwise transparent to it, but the long wavelength radiation is absorbed by the free carriers.

摘要翻译： 将以10.6μm发光的第一激光源例如CO 2 2作为线束和第二激光源聚焦在硅晶片上的热处理装置和方法，例如， 在808nm处发射的GaAs激光棒作为围绕线束的较大光束聚焦在晶片上。 沿着线束的窄尺寸的方向同步地扫描两个光束，以在由较大的光束激活时从线束产生窄的加热脉冲。 GaAs辐射的能量大于硅带隙能量，并产生自由载流子。 CO 2辐射的能量小于硅带隙能量，因此硅对其透明，但是长波长辐射被自由载流子吸收。

公开(公告)号：US06424880B1

公开(公告)日：2002-07-23

申请号：US09393910

申请日：1999-09-10

申请人： Alexey G. Goder ,  Mark Yam

发明人： Alexey G. Goder ,  Mark Yam

IPC分类号： G06F1900

CPC分类号： G05B19/0421 ,  G05B19/41865 ,  Y02P90/20

摘要： A system, method and medium for controlling a wafer processing chamber using two or more processors (within one or more computer processing systems), wherein specified functions are assigned to each processor. Some embodiments contemplate that each processor may reside within its own computer processor system (each computer processor system being in communication with the other), wherein each computer processor system implements specified functions to control and maintain certain parameters involved in the manufacture of the wafer. This allows the present invention to react quickly to maintain rapidly-changing desired conditions within a wafer processing chamber and to maintain a greater degree of uniformity of those conditions throughout the wafer.