Shoe Sole Having Diagonal Groove
    1.
    发明申请
    Shoe Sole Having Diagonal Groove 审中-公开
    鞋底有对角槽

    公开(公告)号:US20150135558A1

    公开(公告)日:2015-05-21

    申请号:US14399153

    申请日:2012-05-10

    IPC分类号: A43B13/22

    摘要: A shoe sole including: an outsole having a tread surface to be in contact with a road surface; and a midsole arranged on the outsole, wherein: the midsole is exposed in a central section of a rear foot section and an arch section; in the central section and a lateral side section of the rear foot section of the shoe sole, a diagonal groove is formed extending in a diagonal front-rear direction in the rear foot section to an outer edge of a lateral side of the rear foot section; an angle β, formed between a virtual center line of the diagonal groove and a longitudinal axis connecting between a center of a heel and a middle point between a big-toe ball and a little-toe ball, is set in a range of 12° to 35°; and a virtual intersection point between the longitudinal axis and the center line is set within a range of 21% to 43% of a full length of the longitudinal axis of the shoe sole from a posterior end of the shoe sole, the diagonal groove extending to a point anterior and medial to the intersection point.

    摘要翻译: 一种鞋底,包括:具有与路面接触的胎面的外底; 以及布置在所述外底上的中底,其中:所述中底露出在后脚部和拱形部分的中心部分中; 在鞋底的中央部分和后脚部分的横向侧部分中,形成在后脚部分中沿对角线前后方向延伸到后足部分的侧面的外边缘的对角槽 ; 形成在斜槽的虚拟中心线和连接脚跟中心与大脚趾球与小脚趾球之间的中点之间的纵轴的角度bgr设定在12 °至35°; 并且纵轴和中心线之间的虚拟交点设置在鞋底的纵向轴线的整个长度的21%至43%的范围内,鞋底的后端延伸到 交叉点前后中点。

    Optical sensor comprising a photodiode having a p-type semiconductor region, an intrinsic semiconductor region, and an n-type semiconductor region
    2.
    发明授权
    Optical sensor comprising a photodiode having a p-type semiconductor region, an intrinsic semiconductor region, and an n-type semiconductor region 有权
    光学传感器包括具有p型半导体区域,本征半导体区域和n型半导体区域的光电二极管

    公开(公告)号:US08848126B2

    公开(公告)日:2014-09-30

    申请号:US13821574

    申请日:2011-09-29

    摘要: Provided is an optical sensor having such a novel structure that even if an intrinsic semiconductor region has a short substantial length in a direction parallel with a forward direction of a photodiode, a light receiving area can be ensured, whereby light detection sensitivity can be improved; and a liquid crystal panel including the optical sensor. The optical sensor includes: a photodiode (26) provided with a semiconductor film (28) having a p-type semiconductor region (28p), an intrinsic semiconductor region (28i), and an n-type semiconductor region (28n); a first gate line (38a) formed above the intrinsic semiconductor region (28i), a negative voltage being applied to the first gate line; and a second gate line (38b) formed above the intrinsic semiconductor region (28i), a positive voltage being applied to the second gate line, wherein a predetermined clearance is formed between the first gate line (38a) and the second gate line (38b), above the intrinsic semiconductor region (28i).

    摘要翻译: 提供了一种具有这样一种新型结构的光学传感器,即使本征半导体区域在与光电二极管的正向平行的方向上具有短的实质长度,也可以确保光接收面积,从而可以提高光检测灵敏度; 以及包括该光学传感器的液晶面板。 光传感器包括:设置有具有p型半导体区域(28p),本征半导体区域(28i)和n型半导体区域(28n)的半导体膜(28)的光电二极管(26) 形成在本征半导体区域(28i)上方的第一栅极线(38a),施加到第一栅极线的负电压; 以及形成在本征半导体区域(28i)上方的第二栅极线(38b),正电压施加到第二栅极线,其中在第一栅极线(38a)和第二栅极线(38b)之间形成预定的间隙 ),在本征半导体区域(28i)之上。

    Semiconductor device
    3.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号:US08803151B2

    公开(公告)日:2014-08-12

    申请号:US13641186

    申请日:2011-04-15

    摘要: A semiconductor device (100) includes: a first thin film transistor (105) of a first conductivity type formed on a substrate for each pixel; and a plurality of photosensor sections (200). Each photosensor section (200) includes a photodetecting portion including a thin film diode (202), a capacitor (206) for storing a photocurrent occurring in the thin film diode (202), and a second thin film transistor (204) of the first conductivity type, the photodetecting portion being connected to the capacitor (206) via the second thin film transistor (204); the first and second thin film transistors (105, 204) and the thin film diode (202) have semiconductor layers made of the same semiconductor film; and a characteristic of the first thin film transistor (105) and a characteristic of the second thin film transistor (204) are different. As a result, the characteristics of the thin film transistors for use in the pixels and the thin film transistors for use in the photosensor sections can be controlled in accordance with the characteristics required of the respective thin film transistors.

    摘要翻译: 半导体器件(100)包括:对于每个像素形成在基板上的第一导电类型的第一薄膜晶体管(105) 和多个光传感器部(200)。 每个光电传感器部分(200)包括一个光电检测部分,包括薄膜二极管(202),用于存储在薄膜二极管(202)中出现的光电流的电容器(206)和第一薄膜晶体管 所述光电检测部分经由所述第二薄膜晶体管连接到所述电容器(206); 第一和第二薄膜晶体管(105,204)和薄膜二极管(202)具有由相同半导体膜制成的半导体层; 并且第一薄膜晶体管(105)的特性和第二薄膜晶体管(204)的特性不同。 结果,可以根据各个薄膜晶体管所需的特性来控制用于像素的薄膜晶体管和用于光电传感器部分的薄膜晶体管的特性。

    SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
    4.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME 有权
    半导体器件及其制造方法

    公开(公告)号:US20130099290A1

    公开(公告)日:2013-04-25

    申请号:US13641442

    申请日:2011-04-06

    IPC分类号: H01L31/113 H01L31/18

    摘要: Disclosed is a method for manufacturing a semiconductor device that can improve the performance of a photodiode that is formed on a same substrate as a thin film transistor without greatly deteriorating the productivity of the semiconductor device. On a glass substrate 30, a base layer 31 having a recess 33b on the surface is formed, and on the base layer 31, an amorphous silicon thin film 42 is formed. The amorphous silicon thin film 42 is melted to form a crystalline silicon thin film 43, while moving the molten silicon into the recess 33b. Of the silicon thin film 43, a silicon film 11 that constitutes a portion of a thin film transistor 10 is formed of the silicon thin film 43 in a part other than the recess 33b, while a silicon film 21 that constitutes a portion of a photodiode 20 is formed of the silicon thin film 43 in the recess 33b.

    摘要翻译: 公开了一种半导体器件的制造方法,其可以提高与薄膜晶体管形成在同一衬底上的光电二极管的性能,而不会使半导体器件的生产率大大降低。 在玻璃基板30上形成表面上具有凹部33b的基底层31,在基底层31上形成非晶硅薄膜42。 将熔融硅移动到凹部33b中,使非晶硅薄膜42熔融而形成结晶硅薄膜43。 在硅薄膜43中,构成薄膜晶体管10的一部分的硅膜11由除了凹部33b以外的部分的硅薄膜43形成,而构成光电二极管的一部分的硅膜21 20由凹槽33b中的硅薄膜43形成。

    Insulated ultrafine powder and high dielectric constant resin composite material
    5.
    发明授权
    Insulated ultrafine powder and high dielectric constant resin composite material 有权
    绝缘超细粉末和高介电常数树脂复合材料

    公开(公告)号:US08184035B2

    公开(公告)日:2012-05-22

    申请号:US11573307

    申请日:2005-08-04

    IPC分类号: H01Q17/00

    摘要: The present invention provides an insulated ultrafine powder containing electrically conductive ultrafine particles coated with an insulation coating, characterized in that the electrically conductive ultrafine particles are formed of a carbon material which is in the form of spherical particles having a diameter of 1 nm or more and 500 nm or less, fibers having a cross-sectional diameter of 1 nm or more and 500 nm or less, or plate-like particles having a thickness of 1 nm or more and 500 nm or less; the insulation coating is formed of an insulating metal oxide or a hydrate thereof; and the thickness of the insulation coating is 0.3 nm or more, and, when the electrically conductive ultrafine particles are in the form of spherical particles, the coating thickness is equal to or less than the diameter of the particles; when the electrically conductive ultrafine particles are in the form of fibers, the coating thickness is equal to or less than the cross-sectional diameter of the fibers; or when the electrically conductive ultrafine particles are in the form of plate-like particles, the coating thickness is equal to or less than the thickness of the plate-like particles; and as well a high-dielectric-constant resin composite material containing the insulated ultrafine powder. The resin composite material exhibits high dielectric constant and radio wave absorbability, while maintaining fundamental characteristics of resin material (i.e., excellent moldability and workability, and light weight).

    摘要翻译: 本发明提供了一种包含涂覆有绝缘涂层的导电超细颗粒的绝缘超细粉末,其特征在于,导电超细颗粒由直径为1nm或更大的球形颗粒形式的碳材料形成, 500nm以下的纤维,其截面直径为1nm以上且500nm以下的纤维或厚度为1nm以上且500nm以下的板状粒子, 绝缘涂层由绝缘金属氧化物或其水合物形成; 并且绝缘涂层的厚度为0.3nm以上,并且当导电性超细颗粒为球形颗粒的形式时,涂层厚度等于或小于颗粒的直径; 当导电性超细颗粒为纤维形式时,涂层厚度等于或小于纤维的横截面直径; 或者当导电性超细颗粒呈板状颗粒形式时,涂层厚度等于或小于板状颗粒的厚度; 以及含有绝缘超细粉末的高介电常数树脂复合材料。 树脂复合材料具有高介电常数和无线电波吸收性,同时保持树脂材料的基本特性(即,优异的成型性和可加工性,重量轻)。

    ELECTRIC POWER TOOL
    6.
    发明申请
    ELECTRIC POWER TOOL 有权
    电动工具

    公开(公告)号:US20110168422A1

    公开(公告)日:2011-07-14

    申请号:US13005788

    申请日:2011-01-13

    IPC分类号: B25F5/00

    CPC分类号: B25F5/008 B24B23/028 B25F5/02

    摘要: An electric power tool includes: a motor; a housing receiving the motor; a power transmission mechanism configured to transmit a driving force of the motor to rotate a top tool; a snap switch including a swing type lever configured to turn on or off rotation of the motor, the snap switch being received inside the housing; a switch lever configured to move in a direction substantially vertical to a surface of the housing; a push bar configured to move the swing type lever in conjunction with the movement of the switch lever; and an urging unit configured to urge the push bar in a direction in which the switch is turned off.

    摘要翻译: 电动工具包括:电动机; 接收马达的壳体; 动力传递机构,其构造成传递所述马达的驱动力以旋转顶部工具; 弹簧开关,其包括构造成打开或关闭所述马达的旋转的摆动杆,所述卡扣开关被容纳在所述壳体内; 开关杆,其构造成在基本上垂直于所述壳体的表面的方向上移动; 推杆,配置成与开关杆的移动一起移动摆动式杠杆; 以及推动单元,其构造成在所述开关被切断的方向上推动所述推杆。

    INSULATED ULTRAFINE POWDER AND HIGH DIELECTRIC CONSTANT RESIN COMPOSITE MATERIAL
    7.
    发明申请
    INSULATED ULTRAFINE POWDER AND HIGH DIELECTRIC CONSTANT RESIN COMPOSITE MATERIAL 有权
    绝缘超细粉末和高介电常数树脂复合材料

    公开(公告)号:US20110102231A1

    公开(公告)日:2011-05-05

    申请号:US11573307

    申请日:2005-08-04

    摘要: The present invention provides an insulated ultrafine powder containing electrically conductive ultrafine particles coated with an insulation coating, characterized in that the electrically conductive ultrafine particles are formed of a carbon material which is in the form of spherical particles having a diameter of 1 nm or more and 500 nm or less, fibers having a cross-sectional diameter of 1 nm or more and 500 nm or less, or plate-like particles having a thickness of 1 nm or more and 500 nm or less; the insulation coating is formed of an insulating metal oxide or a hydrate thereof; and the thickness of the insulation coating is 0.3 nm or more, and, when the electrically conductive ultrafine particles are in the form of spherical particles, the coating thickness is equal to or less than the diameter of the particles; when the electrically conductive ultrafine particles are in the form of fibers, the coating thickness is equal to or less than the cross-sectional diameter of the fibers; or when the electrically conductive ultrafine particles are in the form of plate-like particles, the coating thickness is equal to or less than the thickness of the plate-like particles; and as well a high-dielectric-constant resin composite material containing the insulated ultrafine powder. The resin composite material exhibits high dielectric constant and radio wave absorbability, while maintaining fundamental characteristics of resin material (i.e., excellent moldability and workability, and light weight).

    摘要翻译: 本发明提供了一种包含涂覆有绝缘涂层的导电超细颗粒的绝缘超细粉末,其特征在于,导电超细颗粒由直径为1nm或更大的球形颗粒形式的碳材料形成, 500nm以下的纤维,其截面直径为1nm以上且500nm以下的纤维或厚度为1nm以上且500nm以下的板状粒子, 绝缘涂层由绝缘金属氧化物或其水合物形成; 并且绝缘涂层的厚度为0.3nm以上,并且当导电性超细颗粒为球形颗粒的形式时,涂层厚度等于或小于颗粒的直径; 当导电性超细颗粒为纤维形式时,涂布厚度等于或小于纤维的横截面直径; 或者当导电性超细颗粒呈板状颗粒形式时,涂层厚度等于或小于板状颗粒的厚度; 以及含有绝缘超细粉末的高介电常数树脂复合材料。 树脂复合材料具有高介电常数和无线电波吸收性,同时保持树脂材料的基本特性(即,优异的成型性和可加工性,重量轻)。

    Photosensitive resin composition
    8.
    发明授权
    Photosensitive resin composition 有权
    感光树脂组合物

    公开(公告)号:US07785765B2

    公开(公告)日:2010-08-31

    申请号:US11913173

    申请日:2006-04-28

    IPC分类号: G03F7/00 G03F7/004 G03F7/09

    CPC分类号: G03F7/033 Y10S430/106

    摘要: The present invention relates to a photosensitive resin composition comprising at least a thermoplastic elastomer (a), a photopolymerizable unsaturated monomer (b), and a photopolymerization initiator (c), characterized in that the thermoplastic elastomer (a) comprises at least vinyl aromatic hydrocarbon units, butadiene units, and alkylene units and contains alkylene units not less than 5 wt % and not more than 80 wt % with respect to the total amount of butadiene units and alkylene units. The present invention provides a photosensitive resin composition that simultaneously achieves excellent fine line reproducibility, ester solvent resistance, and prevention of cracks occurring on plate surface.

    摘要翻译: 本发明涉及至少含有热塑性弹性体(a),光聚合性不饱和单体(b)和光聚合引发剂(c)的感光性树脂组合物,其特征在于,所述热塑性弹性体(a)至少含有乙烯基芳香烃 单元,丁二烯单元和亚烷基单元,相对于丁二烯单元和亚烷基单元的总量,含有不少于5重量%且不大于80重量%的亚烷基单元。 本发明提供一种同时具有优异的细线再现性,耐酯溶剂性和防止板表面发生裂纹的感光性树脂组合物。

    Photosensitive Resin Composition
    10.
    发明申请
    Photosensitive Resin Composition 有权
    感光树脂组合物

    公开(公告)号:US20090068593A1

    公开(公告)日:2009-03-12

    申请号:US11913173

    申请日:2006-04-28

    IPC分类号: G03F7/004 C08F2/46

    CPC分类号: G03F7/033 Y10S430/106

    摘要: The present invention relates to a photosensitive resin composition comprising at least a thermoplastic elastomer (a), a photopolymerizable unsaturated monomer (b), and a photopolymerization initiator (c), characterized in that the thermoplastic elastomer (a) comprises at least vinyl aromatic hydrocarbon units, butadiene units, and alkylene units and contains alkylene units not less than 5 wt % and not more than 80 wt % with respect to the total amount of butadiene units and alkylene units. The present invention provides a photosensitive resin composition that simultaneously achieves excellent fine line reproducibility, ester solvent resistance, and prevention of cracks occurring on plate surface.

    摘要翻译: 本发明涉及至少含有热塑性弹性体(a),光聚合性不饱和单体(b)和光聚合引发剂(c)的感光性树脂组合物,其特征在于,所述热塑性弹性体(a)至少含有乙烯基芳香烃 单元,丁二烯单元和亚烷基单元,相对于丁二烯单元和亚烷基单元的总量,含有不少于5重量%且不大于80重量%的亚烷基单元。 本发明提供一种同时具有优异的细线再现性,耐酯溶剂性和防止板表面发生裂纹的感光性树脂组合物。