公开(公告)号：US20170081198A1

公开(公告)日：2017-03-23

申请号：US15123657

申请日：2015-02-12

申请人： Masahiro HOSHINO ,  TAIZHOU BEYOND TECHNOLOGY CO., LTD

发明人： Masahiro Hoshino ,  Lenian Zhang

IPC分类号： C01B31/36 ,  B01J19/08

CPC分类号： C01B31/36 ,  B01J19/088 ,  B01J2219/0869 ,  B01J2219/0883 ,  B01J2219/0884 ,  B01J2219/0886 ,  B01J2219/0888 ,  B01J2219/0894 ,  B01J2219/0898 ,  C01B32/956

摘要： Inside a furnace body with a vacuum environment or under the inert gas protection, the raw silicon material used to produce silicon carbide is melted or vaporized in a high temperature environment over 1300° C., and then the melted or vaporized raw silicon material will react with the carbonaceous gas or liquid to form silicon carbide. The present invention uses the carbonaceous gas with no metallic impurities, to replace petroleum coke, resin, asphalt, graphite, carbon fiber, coal, charcoal and some other carbon sources used in current production processes. When the carburizing reaction is in progress, the raw silicon material is melted or vaporized and the reaction takes place in the air. No container is required, so impurity contamination is lessened, and the produced silicon carbide has a fairly high purity.

公开(公告)号：US08461487B2

公开(公告)日：2013-06-11

申请号：US13023467

申请日：2011-02-08

申请人： Masahiro Hoshino ,  Cheng C. Kao

发明人： Masahiro Hoshino ,  Cheng C. Kao

IPC分类号： H05H1/44 ,  C30B28/04 ,  C01B33/02 ,  C01B33/037 ,  F27B14/00 ,  F27B14/04

CPC分类号： C01B33/037 ,  C30B11/002 ,  C30B11/003 ,  C30B29/06 ,  F27B14/06 ,  F27B14/14 ,  H05B7/18

摘要： A system for forming high quality silicon material, e.g., polysilicon. In a specific embodiment, the melted material comprises a silicon material and an impurity, e.g., phosphorous species. The system includes a crucible having an interior region. In a specific embodiment, the crucible is made of a suitable material such as a quartz material or others. The quartz material is capable of withstanding a temperature of at least 1400 Degrees Celsius for processing silicon. In a specific embodiment, the crucible is configured in an upright position and has an open region to expose a melted material. In a specific embodiment, the present system has an energy source. Such energy source may be an arc heater or other suitable heating device, including multiple heating devices, which may be the same or different. The arc heater is configured above the open region and spaced by a gap between the exposed melted material and a muzzle region of the arc heater to cause formation of a determined temperature profile within a vicinity of a center region of the exposed melted material while maintaining outer regions of the melted material at a temperature below a melting point of the quartz material of the crucible. In a specific embodiment, the system produces a melted material comprising a resulting phosphorous species of 0.1 ppm and less, which is purified silicon.

摘要翻译： 一种用于形成高质量硅材料的系统，例如多晶硅。 在具体实施方案中，熔融材料包括硅材料和杂质，例如磷类。 该系统包括具有内部区域的坩埚。 在具体实施例中，坩埚由合适的材料例如石英材料制成。 石英材料能够耐受至少1400摄氏度的温度来处理硅。 在具体实施例中，坩埚被构造成直立位置并且具有敞开的区域以暴露熔融的材料。 在具体实施例中，本系统具有能量源。 这种能量源可以是电弧加热器或其它合适的加热装置，包括可以相同或不同的多个加热装置。 电弧加热器构造在开放区域之上并且间隔开暴露的熔融材料和电弧加热器的枪口区域之间的间隙，以在暴露的熔融材料的中心区域附近形成确定的温度分布，同时保持外部 在低于坩埚的石英材料的熔点的温度下熔化的材料的区域。 在一个具体的实施方案中，系统产生熔融材料，其包含0.1ppm及更少的所得磷种，其为纯化的硅。

公开(公告)号：US07910777B2

公开(公告)日：2011-03-22

申请号：US12560788

申请日：2009-09-16

申请人： Masahiro Hoshino ,  Keisuke Sugita ,  Avelino Corma

发明人： Masahiro Hoshino ,  Keisuke Sugita ,  Avelino Corma

IPC分类号： C07C45/32 ,  C07C35/18

CPC分类号： C07C29/50 ,  B01J29/0308 ,  B01J29/0325 ,  B01J29/0333 ,  B01J29/0341 ,  B01J2229/12 ,  B01J2229/18 ,  B01J2229/32 ,  C07C45/33 ,  C07C2601/14 ,  C07C31/1355 ,  C07C49/403

摘要： The present invention provides a method for producing cycloalkanol and/or cycloalkanone, which comprises reacting cycloalkane with molecular oxygen in the presence of mesoporous silica, (1) the mesoporous silica containing at least one transition metal; (2) the mesoporous silica having such pore distribution that the ratio of a total pore volume of mesoporous silica particles having a pore size of 3 to 50 nm to a total pore volume of mesoporous silica particles having a pore size of 2 to 50 nm is 50% or more; and (3) the mesoporous silica being modified by an organic silicon compound.

摘要翻译： 本发明提供一种制备环烷醇和/或环烷酮的方法，其包括在介孔二氧化硅存在下使环烷烃与分子氧反应，（1）含有至少一种过渡金属的介孔二氧化硅; （2）具有孔分布的孔隙二氧化硅，孔径为3〜50nm的介孔二氧化硅粒子的总细孔容积与孔径为2〜50nm的介孔二氧化硅粒子的总孔体积的比为 50％以上; 和（3）介孔二氧化硅被有机硅化合物改性。

公开(公告)号：US07536759B2

公开(公告)日：2009-05-26

申请号：US11541689

申请日：2006-10-03

申请人： Masahiro Hoshino

发明人： Masahiro Hoshino

IPC分类号： A44B11/00 ,  A44C5/18 ,  A44C25/00 ,  A44C11/02

CPC分类号： A44C5/2042 ,  A44C5/2066 ,  Y10T24/3437 ,  Y10T24/45623 ,  Y10T24/45639 ,  Y10T24/4566

摘要： A clasp including a base connected to at least one end of looping member which has an upper opening at an upper side thereof and which has a front opening at a front side thereof; an arm which is supported by the edge of the base in a rotatable manner, which has a nail portion at a rear end thereof; and which makes up a loop by closing the arm; a push button embedded within the upper opening of the base and communicated with the nail portion of the arm; a first spring which applies a resilient force to the push button in the direction that the push button is projecting outwardly; and a second spring which applies a resilient force to the arm in the direction of opening the arm.

摘要翻译： 一种扣环，其包括连接到环形构件的至少一端的基座，该基部在其上侧具有上开口，并且在其前侧具有前开口; 臂部，其以可旋转的方式由基部的边缘支撑，在其后端具有指甲部分; 并通过关闭手臂组成一个回路; 嵌入在基座的上开口内并与臂的指甲部分连通的按钮; 第一弹簧，其在按钮向外突出的方向上向按钮施加弹性力; 以及第二弹簧，其在臂的打开方向上向臂施加弹性力。

公开(公告)号：US20070113386A1

公开(公告)日：2007-05-24

申请号：US11541689

申请日：2006-10-03

申请人： Masahiro Hoshino

发明人： Masahiro Hoshino

IPC分类号： A44B11/00 ,  A44C5/18

CPC分类号： A44C5/2042 ,  A44C5/2066 ,  Y10T24/3437 ,  Y10T24/45623 ,  Y10T24/45639 ,  Y10T24/4566

摘要： A clasp of the present invention comprises: a base connected to at least one end of looping member which has an upper opening at an upper side thereof and which has a front opening at a front side thereof; an arm which is supported by the edge of the base in a rotatable manner, which has a nail portion at a rear end thereof, and which makes up a loop by closing the arm; a push button embedded within the upper opening of the base and communicated with the nail portion of the arm; a first spring which applies a resilient force to the push button in the direction that the push button is projecting outwardly; and a second spring which applies a resilient force to the arm in the direction of opening the arm.

摘要翻译： 本发明的扣具包括：连接到环形构件的至少一端的底座，其在其上侧具有上开口，并且在前侧具有前开口; 臂以可旋转的方式由基部的边缘支撑，在其后端具有指甲部分，并且通过闭合臂构成环; 嵌入在基座的上开口内并与臂的指甲部分连通的按钮; 第一弹簧，其在按钮向外突出的方向上向按钮施加弹性力; 以及第二弹簧，其在臂的打开方向上向臂施加弹性力。

公开(公告)号：US07060645B2

公开(公告)日：2006-06-13

申请号：US11165538

申请日：2005-06-24

申请人： Masahiro Hoshino ,  Masaru Kitamura ,  Keisuke Sugita

发明人： Masahiro Hoshino ,  Masaru Kitamura ,  Keisuke Sugita

IPC分类号： B01J29/40 ,  C07D201/04

CPC分类号： C07D201/04 ,  B01J29/035 ,  B01J37/06 ,  B01J2229/38 ,  B01J2229/40 ,  C01B37/02

摘要： The present invention provides a method for manufacturing a zeolite comprising following steps of: (1): calcining crystals obtained by hydrothermal synthesis reaction of a silicon compound; (2): contact treating a calcined product obtained by the step (1) with an aqueous solution including an amine and/or a quaternary ammonium compound; (3): calcining a treated product obtained by the step (2); and (4): contact treating the calcined product obtained by the step (3) with an aqueous solution including ammonia and/or an ammonium salt. According to the present invention, a method is also provided wherein ε-caprolactam is manufactured by Beckmann rearrangement reaction of cyclohexanone oxime in a gaseous phase in the presence of the zeolite manufactured by the above-described method.

摘要翻译： 本发明提供一种制造沸石的方法，包括以下步骤：（1）：煅烧通过硅化合物的水热合成反应获得的晶体; （2）：用包含胺和/或季铵化合物的水溶液接触步骤（1）得到的煅烧产物; （3）：煅烧通过工序（2）得到的处理物; 和（4）：用包含氨和/或铵盐的水溶液接触处理由步骤（3）获得的煅烧产物。 根据本发明，还提供了一种方法，其中ε-己内酰胺通过在通过上述方法制造的沸石存在下，在气相中通过环己酮肟的贝克曼重排反应制造。

公开(公告)号：US07026474B2

公开(公告)日：2006-04-11

申请号：US11055101

申请日：2005-02-11

申请人： Keisuke Sugita ,  Masaru Kitamura ,  Masahiro Hoshino

发明人： Keisuke Sugita ,  Masaru Kitamura ,  Masahiro Hoshino

IPC分类号： C07D201/04

CPC分类号： B01J38/08 ,  B01J29/90 ,  B01J38/12 ,  B01J38/66 ,  C07D201/04 ,  Y02P20/52 ,  Y02P20/584

摘要： A method for producing ε-caprolactam and a method for reactivating a zeolite catalyst for the production are provided. In the reactivation step, a zeolite catalyst is allowed to contact a gas containing a carboxylic acid, water and a compound selected from ammonia and amines. In accordance with the present invention, the catalytic activities of a zeolite catalyst used for the Beckmann rearrangement reaction of cyclohexanone oxime can be effectively restored. Consequently, ε-caprolactam may be produced with a high production yield for a long period of time by reusing the catalyst by the method described above.

摘要翻译： 提供了制备ε-己内酰胺的方法和用于再生催化剂的方法。 在再活化步骤中，使沸石催化剂与含有羧酸，水和选自氨和胺的化合物的气体接触。 根据本发明，可以有效地恢复用于环己酮肟的贝克曼重排反应的沸石催化剂的催化活性。 因此，通过上述方法重新使用催化剂，可以长期生产ε-己内酰胺。

公开(公告)号：US06049266A

公开(公告)日：2000-04-11

申请号：US288288

申请日：1999-04-08

申请人： Masahiro Hoshino ,  Hideaki Nagayoshi

发明人： Masahiro Hoshino ,  Hideaki Nagayoshi

IPC分类号： G05F1/24 ,  H01F27/28 ,  H01F27/34 ,  H01F30/00 ,  H01F30/04

CPC分类号： G05F1/24 ,  H01F27/2823 ,  H01F27/34

摘要： A single-phase three-wire type transformer which forms secondary coils by duplex coils winding two conductors in parallel according to the division intersection connection and can reduce currents circulating inside of a circuit of the transformer, thereby reducing the loss in the transformer. Coils A and B are formed in two opposing locations of a core (1). The coils A and B are configured so that two secondary coils and a primary coil are overlapped and wound in sequence from the inside of the core (1) in three layers, respectively. Each of the secondary coils provided by winding two conductors of small diameter in parallel condition on the core (1). One duplex coil connects the two parallel winding conductors in series with the other duplex coil, i.e. coils (211a) and (222b) are connected at a connection point (p), coils (212a) and (221b) at a connection point (q), coils (221a) and (212b) at a connection point (r), and coils (222a) and (211b) at a connection point (s), and the connection lines are intersected, whereby two closed circuits are formed in the secondary coils.

摘要翻译： 单相三线式变压器，通过双相线圈形成二次线圈，根据分路口并联绕组两根导线，可以减少变压器电路内部流动的电流，从而减小变压器的损耗。 线圈A和B形成在芯（1）的两个相对的位置。 线圈A和B被配置为使得两个次级线圈和初级线圈分别从铁心（1）的内侧按顺序重叠并缠绕。 每个次级线圈通过在芯（1）上以平行条件缠绕两个小直径的导体而提供。 一个双工线圈将两个并联的绕组导体与另一个双相线圈串联，即线圈（211a）和（222b）在连接点（p）处连接，线圈（212a）和（221b）在连接点 ），连接点（r）处的线圈（221a）和（212b）以及连接点处的线圈（222a）和（211b），并且连接线相交，由此在 次级线圈

公开(公告)号：US08673073B2

公开(公告)日：2014-03-18

申请号：US13541319

申请日：2012-07-03

申请人： Masahiro Hoshino ,  Cheng C. Kao

发明人： Masahiro Hoshino ,  Cheng C. Kao

IPC分类号： C30B28/04

CPC分类号： C01B33/037 ,  H01L31/182 ,  Y02E10/546 ,  Y02P70/521

摘要： A method for purifying silicon bearing materials for photovoltaic applications includes providing metallurgical silicon into a crucible apparatus. The metallurgical silicon is subjected to at least a thermal process to cause the metallurgical silicon to change in state from a first state to a second state, the second stage being a molten state not exceeding 1500 Degrees Celsius. At least a first portion of impurities is caused to be removed from the metallurgical silicon in the molten state. The molten metallurgical silicon is cooled from a lower region to an upper region to cause the lower region to solidify while a second portion of impurities segregate and accumulate in a liquid state region. The liquid state region is solidified to form a resulting silicon structure having a purified region and an impurity region. The purified region is characterized by a purity of greater than 99.9999%.

摘要翻译： 用于光电应用的用于纯化硅轴承材料的方法包括将冶金硅提供到坩埚装置中。 对冶金硅进行至少一个热处理，使冶金硅从第一状态转变到第二状态，第二阶段是不超过1500摄氏度的熔融状态。 使至少第一部分杂质从熔融状态的冶金硅中除去。 熔融冶金硅从下部区域冷却到上部区域，导致下部区域固化，而第二部分杂质在液态区域中分离并积聚。 液态区域被固化，形成具有纯化区域和杂质区域的所得硅结构。 纯化区的特征在于纯度大于99.9999％。

公开(公告)号：US08501140B2

公开(公告)日：2013-08-06

申请号：US13536919

申请日：2012-06-28

申请人： Masahiro Hoshino ,  Cheng C. Kao

发明人： Masahiro Hoshino ,  Cheng C. Kao

IPC分类号： C01B33/021

CPC分类号： C01B33/037 ,  H01L31/182 ,  Y02E10/546 ,  Y02P70/521

摘要： A method improves yield of an upgraded metallurgical-grade (UMG) silicon purification process. In the UMG silicon purification process, in a reaction chamber, purification is performed on a silicon melt therein by one, all or a plurality of the following techniques in the same apparatus at the same time. The techniques includes a crucible ratio approach, the addition of water-soluble substances, the control of power, the control of vacuum pressure, the upward venting of exhaust, isolation by high-pressure gas jet, and carbon removal by sandblasting, thereby reducing oxygen, carbon and other impurities in the silicon melt, meeting a high-purity silicon standard of solar cells, increasing yield while maintaining low cost, and avoiding EMF reduction over time. An exhaust venting device for the purification process allows exhaust to be vented from the top of the reactor chamber, thereby avoiding backflow of exhaust into the silicon melt and erosion of the reactor.

摘要翻译： 一种方法提高了升级冶金级（UMG）硅纯化工艺的产量。 在UMG硅纯化方法中，在反应室中，在同一装置中同时进行一种，全部或多种以下技术的硅熔体的纯化。 该技术包括坩埚比方法，水溶性物质的添加，功率的控制，真空压力的控制，排气的向上排气，高压气体喷射的隔离以及通过喷砂除碳，从而减少氧气 ，硅熔体中的碳和其他杂质，满足太阳能电池的高纯硅标准，提高产量，同时保持低成本，并避免随着时间的推移EMF减少。 用于净化过程的排气装置允许排气从反应器室的顶部排出，从而避免排入硅熔体的回流和反应器的侵蚀。