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13 条记录 (耗时 0.016 秒)

    Optical pickup device using polarizing hologram element and hologram laser therefor
    3.
    发明授权
    Optical pickup device using polarizing hologram element and hologram laser therefor 失效
    使用偏光全息元件和全息激光的光学拾取装置

    公开(公告)号：US07483360B2

    公开(公告)日：2009-01-27

    申请号：US10954923

    申请日：2004-09-29

    申请人： Katsushige Masui ,  Kazuhiro Tsuchida ,  Kazunori Matsubara ,  Masahiro Ikehara ,  Keiji Sakai ,  Tetsuo Ueyama ,  Toshiya Nagahama

    发明人： Katsushige Masui ,  Kazuhiro Tsuchida ,  Kazunori Matsubara ,  Masahiro Ikehara ,  Keiji Sakai ,  Tetsuo Ueyama ,  Toshiya Nagahama

    IPC分类号： G11B7/00

    CPC分类号： G11B7/131 ,  G11B7/0903 ,  G11B7/094 ,  G11B7/1353 ,  G11B2007/0013

    摘要： To read information from a target information recording surface reliably by canceling DC offsets in tracking-signal detection signals is provided. In effecting tracking servo by 3-beam method, auxiliary light receiving domains D3—1, D3—2, D8—1, D8—2 are provided. The auxiliary light receiving domain receives images formed by the light returned from a different information recording surface from the one targeted for reading. Sub beams of ± first-order diffracted light enter the light receiving domains D3, D8, D1, D10. With respect to the diffraction direction of the hologram, the auxiliary light receiving domains D3—1, D3—2 (D8—1, D8—2) are provided on both sides of the light receiving domain D3 (D8). Since signals are computed as: D8−(D8—1+D8—2); and D3−(D3—1+D3—2) with the internal connection, DC offsets can be canceled in RES signals (D1+D3, D8+D10) used in the DPP method.

    摘要翻译： 提供通过消除跟踪信号检测信号中的DC偏移来可靠地从目标信息记录表面读取信息。 通过三光束法实现跟踪伺服，提供辅助光接收域D3-1，D3-2，D8-1，D8-2。 辅助光接收区域接收由不同信息记录表面返回的光从与读取对象相对应的光形成的图像。 ±一级衍射光的子光进入光接收域D3，D8，D1，D10。 对于全息图的衍射方向，辅助光接收区域D3-1，D3-2（D8-1，D8-2）设置在光接收区域D3（D8）的两侧。 由于信号计算如下：D8-（D8-1 + D8-2）; 和D3-（D3-1 + D3-2）内部连接时，可以在DPP方式中使用的RES信号（D1 + D3，D8 + D10）中取消DC偏移。

    Machining method not causing any damage to major cut surfaces of cut objects
    4.
    发明授权
    Machining method not causing any damage to major cut surfaces of cut objects 失效
    加工方法不会对切割物体的主切割面造成任何损坏

    公开(公告)号：US06763823B1

    公开(公告)日：2004-07-20

    申请号：US09522397

    申请日：2000-03-09

    申请人： Masahiro Ikehara

    发明人： Masahiro Ikehara

    IPC分类号： B28D108

    CPC分类号： B28D5/045

    摘要： An ingot is placed below parallel wires of a multiwire saw, and the wires are driven to run. The ingot is moved upward and cut by the wires to obtain wafers. The wires are displaced toward one side of cut surfaces of the wafers. By lowering the wafers as the wires remains displaced toward the one side of cut surfaces of the wafers, the wires are pulled out of the wafers without contacting the other side cut surfaces of the wafers. Thus, the multiwire saw does not cause any damage to major surfaces of the wafers and is used many times without cutting the wires.

    摘要翻译： 将铸锭放置在多线锯的平行线下方，并且电线被驱动运行。 锭向上移动并被电线切割以获得晶片。 导线朝向晶片的切割表面的一侧移位。 通过在晶片保持向晶片的切割面的一侧移动的同时降低晶片，将导线从晶片中拉出而不与晶片的另一侧切割表面接触。 因此，多线锯不会对晶片的主要表面造成任何损坏，并且在不切割电线的情况下使用多次。

    Semiconductor laser device
    5.
    发明申请
    Semiconductor laser device 审中-公开
    半导体激光器件

    公开(公告)号：US20060203869A1

    公开(公告)日：2006-09-14

    申请号：US11352044

    申请日：2006-02-09

    申请人： Masahiro Ikehara

    发明人： Masahiro Ikehara

    IPC分类号： H01S5/00

    CPC分类号： H01S5/02236 ,  H01S5/02268 ,  H01S5/02476

    摘要： A semiconductor laser device includes a submount and a laser chip mounted on the submount. The submount has a front-end face inclined with respect to a light-emitting face of the laser chip and a rear-end face having a shape complementary to the shape of the front-end face.

    摘要翻译： 半导体激光装置包括安装在基座上的基座和激光芯片。 底座具有相对于激光芯片的发光面倾斜的前端面和具有与前端面的形状互补的形状的后端面。

    Compound semiconductor device and manufacturing method thereof
    6.
    发明授权
    Compound semiconductor device and manufacturing method thereof 有权
    化合物半导体器件及其制造方法

    公开(公告)号：US07195998B2

    公开(公告)日：2007-03-27

    申请号：US10341697

    申请日：2003-01-13

    申请人： Masahiro Ikehara

    发明人： Masahiro Ikehara

    IPC分类号： H01L21/20

    CPC分类号： H01L21/6835 ,  H01L21/30617 ,  H01L21/78 ,  H01L29/045 ,  H01L29/20 ,  H01L33/20 ,  H01L2221/68322 ,  H01L2221/68331

    摘要： A compound semiconductor device including: an isolated mesa section on which an upper surface having two pairs of parallel sides is formed by mesa etching a compound semiconductor wafer, wherein the mesa section is formed from at least a forward mesa surface which is a mesa section side surface having an obtuse angle against a wafer surface and a backward mesa surface which is a mesa section side surface having an acute angle against the wafer surface, the two mesa surfaces being recognized when viewed from an X direction parallel to one pair of the two parallel sides of the upper surface of the mesa section.

    摘要翻译： 一种化合物半导体器件，包括：隔离台面部分，通过台面蚀刻化合物半导体晶片在其上形成具有两对平行边的上表面，其中台面部分至少由台阶部分侧的正面台面形成 与晶圆表面成锐角的表面和相对于晶片表面具有锐角的台面侧表面的后台面表面，当从平行于两对平行的一对的X方向观察时，识别出两个台面表面 台面部分上表面的两侧。

    Semiconductor laser device and optical pickup device
    7.
    发明授权
    Semiconductor laser device and optical pickup device 失效
    半导体激光器件和光学拾取器件

    公开(公告)号：US07136409B2

    公开(公告)日：2006-11-14

    申请号：US10812317

    申请日：2004-03-30

    申请人： Masahiro Ikehara ,  Katsushige Masui ,  Kazuhiro Tsuchida ,  Keiji Sakai

    发明人： Masahiro Ikehara ,  Katsushige Masui ,  Kazuhiro Tsuchida ,  Keiji Sakai

    IPC分类号： H01S3/08 ,  G11B7/12

    CPC分类号： G11B7/1353 ,  G02B27/106 ,  G02B27/1086 ,  G02B27/145 ,  G02B27/283 ,  G11B7/123 ,  G11B7/131 ,  G11B7/1381 ,  H01S5/02212 ,  H01S5/02248 ,  H01S5/02296

    摘要： In this semiconductor laser device, a polarization hologram transmits an outgoing beam directed from a semiconductor laser chip to an optical disk as a forward beam without diffracting the beam, and diffracts a backward beam of the laser beam, which is a return beam of the forward beam that has been reflected by the optical disk, so that the backward beam is deflected from a direction directed toward the semiconductor laser chip part and further directed toward first, second photoreception parts. Therefore, optical loss on the forward way from the semiconductor laser chip to the optical disk can be reduced, and return light to the semiconductor laser chip can be suppressed, so that a high-power, high-sensitivity semiconductor laser device can be realized.

    摘要翻译： 在该半导体激光器件中，偏振全息图将来自半导体激光器芯片的出射光束作为前向光束传输到光盘而不衍射光束，并且衍射作为向前的返回光束的激光束的反向光束 光束被反射的光束，使得反射光束从朝向半导体激光器芯片部分的方向偏转并进一步朝向第一，第二光接收部分。 因此，可以减少从半导体激光器芯片向光盘的正向移动的光损耗，并且可以抑制向半导体激光器芯片的返回光，从而可以实现高功率，高灵敏度的半导体激光器件。

    Semiconductor laser device
    10.
    发明申请
    Semiconductor laser device 审中-公开
    半导体激光器件

    公开(公告)号：US20070076772A1

    公开(公告)日：2007-04-05

    申请号：US11541326

    申请日：2006-09-28

    申请人： Takeshi Horiguchi ,  Masahiro Ikehara ,  Fumio Torimatsu

    发明人： Takeshi Horiguchi ,  Masahiro Ikehara ,  Fumio Torimatsu

    IPC分类号： H01S5/00

    CPC分类号： H01S5/22 ,  B82Y20/00 ,  H01L24/32 ,  H01S5/0224 ,  H01S5/02272 ,  H01S5/0425 ,  H01S5/2022 ,  H01S5/3211 ,  H01S5/34326 ,  H01S5/3436 ,  H01S2301/14 ,  H01S2301/18

    摘要： Provided is a semiconductor laser device with a ridge waveguide that is excellent in polarization characteristics and easiness of mounting. In its outermost part on which the solder layer is deposited, the incomplete adherent layer is formed at least in the ridge structure. In bonding the semiconductor laser device to the mount via the solder layer, the incomplete adherent layer is not adhered or adhered incompletely to the solder layer. On either side of the incomplete adherent layer is formed the complete adherent layer.

    摘要翻译： 本发明提供一种具有极性特性优异且安装容易性好的脊波导的半导体激光装置。 在其最终部分上沉积焊料层，至少在脊状结构中形成不完全粘附层。 在通过焊料层将半导体激光器件接合到安装件时，不完全粘附层不完全粘附或粘附到焊料层。 在不完全粘附层的任一侧上形成完整的粘附层。