Member for semiconductor manufacturing apparatus
    1.
    发明授权
    Member for semiconductor manufacturing apparatus 有权
    半导体制造设备会员

    公开(公告)号:US08908349B2

    公开(公告)日:2014-12-09

    申请号:US13420810

    申请日:2012-03-15

    IPC分类号: H02N13/00 H01L21/683

    CPC分类号: H01L21/6833

    摘要: An electrostatic chuck is provided with a ceramic substrate 12 in which an electrode 14 is embedded, an electrode terminal 14a exposed at the bottom of a concave portion 16 disposed on the back surface of the ceramic substrate 12, a power feed member 20 to supply an electric power to the electrode 14, and a joining layer 22 to connect this power feed member 20 to the ceramic substrate 12. The joining layer 22 is formed by using a AuGe based alloy, a AuSn based alloy, or a AuSi based alloy. The ceramic substrate 12 and the power feed member 20 are selected in such a way that the thermal expansion coefficient difference D calculated by subtracting the thermal expansion coefficient of the ceramic substrate 12 from the thermal expansion coefficient of the power feed member 20 satisfies −2.2≦D≦6 (unit: ppm/K).

    摘要翻译: 静电吸盘设置有嵌入电极14的陶瓷基板12,暴露在设置在陶瓷基板12的背面的凹部16的底部的电极端子14a,供电部件20 电极14的电力,以及将该供电部件20连接到陶瓷基板12的接合层22.接合层22通过使用AuGe系合金,AuSn系合金或AuSi系合金形成。 选择陶瓷基板12和供电部件20,使得通过从供电部件20的热膨胀系数减去陶瓷基板12的热膨胀系数而计算的热膨胀系数差D满足-2.2< ; D≦̸ 6(单位:ppm / K)。