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    SEMICONDUCTOR DEVICE, AND PROCESS FOR MANUFACTURING SEMICONDUCTOR DEVICE
    1.
    发明申请
    SEMICONDUCTOR DEVICE, AND PROCESS FOR MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开
    半导体器件及制造半导体器件的工艺

    公开(公告)号：US20130337608A1

    公开(公告)日：2013-12-19

    申请号：US14003404

    申请日：2012-03-09

    申请人： Takahiro Kotani ,  Masakatsu Maeda

    发明人： Takahiro Kotani ,  Masakatsu Maeda

    IPC分类号： H01L21/56

    CPC分类号： H01L21/561 ,  H01L21/568 ,  H01L23/29 ,  H01L23/3128 ,  H01L23/49816 ,  H01L23/5389 ,  H01L24/19 ,  H01L24/20 ,  H01L24/96 ,  H01L25/0655 ,  H01L2224/12105 ,  H01L2224/13024 ,  H01L2224/96 ,  H01L2924/01029 ,  H01L2924/10253 ,  H01L2924/3511 ,  H01L2224/19 ,  H01L2924/00

    摘要： According to the present invention, a structure of a semiconductor device in which adhesive deposits are reduced and yield is excellent; and a process for manufacturing the same can be provided. A process for manufacturing a semiconductor device according to the present invention includes: a step of arranging plural semiconductor elements (106) on a main surface of a thermal release adhesive layer (mount film); a step of forming an encapsulant layer (108), which encapsulates the plural semiconductor elements (106) on the main surface of the mount film, using a semiconductor-encapsulating resin composition; and a step of peeling off the mount film to expose a lower surface (30) of the encapsulant layer (108) and lower surfaces (20) of the semiconductor elements (106). A contact angle of the lower surface (30) of the encapsulant layer (108) is less than or equal to 70° when measured using formamide after the step of peeling off the mount film.

    摘要翻译： 根据本发明，其中粘合剂沉积物减少并且产率优异的半导体器件的结构; 并且可以提供其制造方法。 根据本发明的半导体器件的制造方法包括：将多个半导体元件（106）布置在热剥离粘合剂层（安装膜）的主表面上的步骤; 使用半导体封装树脂组合物形成将所述多个半导体元件（106）封装在所述安装膜的主表面上的密封剂层（108）的工序; 以及剥离所述安装膜以暴露所述密封剂层（108）的下表面（30）和所述半导体元件（106）的下表面（20）的步骤。 在剥离安装膜的步骤之后，使用甲酰胺测量时，密封剂层（108）的下表面（30）的接触角小于或等于70°。

    METHOD FOR MANUFACTURING METALLIZED CERAMIC SUBSTRATE CHIP
    3.
    发明申请
    METHOD FOR MANUFACTURING METALLIZED CERAMIC SUBSTRATE CHIP 审中-公开
    用于制造金属化陶瓷衬底芯片的方法

    公开(公告)号：US20120174390A1

    公开(公告)日：2012-07-12

    申请号：US13423616

    申请日：2012-03-19

    申请人： Yasuyuki YAMAMOTO ,  Kouichi YAMAMOTO ,  Masakatsu MAEDA

    发明人： Yasuyuki YAMAMOTO ,  Kouichi YAMAMOTO ,  Masakatsu MAEDA

    IPC分类号： H01R43/00

    CPC分类号： H05K3/0052 ,  H01L23/13 ,  H01L2924/0002 ,  H05K1/0306 ,  H05K2201/09036 ,  H05K2201/0909 ,  H05K2203/0228 ,  Y10T29/49117 ,  Y10T29/49124 ,  H01L2924/00

    摘要： The present invention provides a method for manufacturing a substrate chip including the steps of: setting the thickness of at least a part of a metal wiring pattern unit provided on the raw substrate to be 0.1 μm to 5 μm; forming a groove for creating at least a crack in the surface of the ceramic substrate along a planned cutting line which passes through the part of the metal wiring pattern unit by using a cutting wheel having a cutter blade being formed into substantially V shape in cross section along the circumferential portion of the disk rotating wheel; and cutting the raw substrate by giving load from just behind of the groove.

    摘要翻译： 本发明提供一种制造衬底芯片的方法，包括以下步骤：将设置在原始衬底上的金属布线图案单元的至少一部分的厚度设定为0.1μm至5μm; 形成用于沿着规划的切割线在陶瓷基板的表面中至少形成裂纹的槽，该切割线穿过金属布线图案单元的一部分，通过使用具有切割刀的切割轮，该切割轮具有大致V形截面 沿着盘旋转轮的圆周部分; 并通过从凹槽的后面施加载荷来切割原始基底。

    Method of forming an OHMIC contact on a P-type 4H-SIC substrate
    4.
    发明授权
    Method of forming an OHMIC contact on a P-type 4H-SIC substrate 有权
    在P型4H-SIC基板上形成OHMIC接触的方法

    公开(公告)号：US08008180B2

    公开(公告)日：2011-08-30

    申请号：US12530901

    申请日：2008-03-13

    申请人： Yasuo Takahashi ,  Masakatsu Maeda ,  Akinori Seki ,  Akira Kawahashi ,  Masahiro Sugimoto

    发明人： Yasuo Takahashi ,  Masakatsu Maeda ,  Akinori Seki ,  Akira Kawahashi ,  Masahiro Sugimoto

    IPC分类号： H01L21/44

    CPC分类号： H01L29/7813 ,  H01L21/0485 ,  H01L29/1608 ,  H01L29/41766 ,  H01L29/45 ,  H01L29/732 ,  Y10S438/931

    摘要： A method of forming an Ohmic contact on a P-type 4H—SiC and an Ohmic contact formed by the same are provided. A method of forming an Ohmic contact on a P-type 4H—SiC substrate including a deposition step of successively depositing a 1 to 60 nm thick first Al layer, Ti layer, and second Al layer on a P-type 4H—SiC substrate and an alloying step of forming an alloy layer between the SiC substrate and the Ti layer through the first Al layer by heat treatment in a nonoxidizing atmosphere. An Ohmic contact on a P-type 4H—SiC substrate formed by this method is also provided.

    摘要翻译： 提供了在P型4H-SiC上形成欧姆接触的方法和由其形成的欧姆接触。 在P型4H-SiC衬底上形成欧姆接触的方法，包括在P型4H-SiC衬底上依次沉积1至60nm厚的第一Al层，Ti层和第二Al层的沉积步骤;以及 合金化步骤，通过在非氧化气氛中的热处理，通过第一Al层在SiC衬底和Ti层之间形成合金层。 还提供了通过该方法形成的P型4H-SiC衬底上的欧姆接触。

    Process for producing metallized aluminum nitride substrate
    5.
    发明授权
    Process for producing metallized aluminum nitride substrate 有权
    金属化氮化铝基板的制造方法

    公开(公告)号：US07993699B2

    公开(公告)日：2011-08-09

    申请号：US11667603

    申请日：2005-11-10

    申请人： Yasuyuki Yamamoto ,  Masakatsu Maeda

    发明人： Yasuyuki Yamamoto ,  Masakatsu Maeda

    IPC分类号： B05D5/12 ,  B05D3/00

    CPC分类号： C04B41/5133 ,  B22F7/02 ,  C04B41/009 ,  C04B41/51 ,  C04B41/52 ,  C04B41/88 ,  C04B41/90 ,  C04B2111/00844 ,  C22C32/0047 ,  C23C24/08 ,  C23C30/005 ,  H01L23/15 ,  H01L2924/0002 ,  H05K1/092 ,  H05K2201/0209 ,  Y10T29/49789 ,  Y10T428/12063 ,  C04B41/0072 ,  C04B41/4539 ,  C04B41/4572 ,  C04B41/5063 ,  C04B41/4564 ,  C04B41/5116 ,  C04B41/5144 ,  C04B35/581 ,  H01L2924/00

    摘要： A metallized aluminum substrate for mounting a semiconductor device such as LD or LED is provided and a metallized aluminum nitride substrate having excellent dimensional accuracy and high bonding strength of a wiring pattern. An intermediate material substrate is provided, comprising a sintered aluminum nitride substrate having on its surface a wiring pattern constituted of a conductor layer composed of a composition containing at least high-melting point metal powder, aluminum nitride powder and a sintering auxiliary agent for aluminum nitride is prepared. Then, the intermediate material substrate is fired while the sintered aluminum nitride obtained by sintering using a sintering auxiliary agent of the same kind as that of the sintering auxiliary agent contained in the composition is placed so as to be brought into contact with the conductor layer on the surface of the intermediate material substrate or so as to be present in the vicinity of the conductor layer.

    摘要翻译： 提供了用于安装诸如LD或LED的半导体器件的金属化铝基板和具有优异的尺寸精度和布线图案的高粘结强度的金属化的氮化铝基板。 提供了一种中间材料基板，其包括烧结的氮化铝基板，其表面上具有由至少含有高熔点金属粉末，氮化铝粉末和氮化铝的烧结助剂的组成的导体层构成的布线图案 准备好了 然后，烧结中间材料基板，同时通过使用与组合物中所含的与烧结助剂相同种类的烧结助剂进行烧结而获得的烧结氮化铝被放置成与导体层接触， 中间材料基板的表面，或者存在于导体层附近。

    Nitride sintered body and method for manufacturing thereof
    6.
    发明授权
    Nitride sintered body and method for manufacturing thereof 有权
    氮化物烧结体及其制造方法

    公开(公告)号：US07876053B2

    公开(公告)日：2011-01-25

    申请号：US11630630

    申请日：2005-06-20

    申请人： Yasuyuki Yamamoto ,  Yukihiro Kanechika ,  Masakatsu Maeda

    发明人： Yasuyuki Yamamoto ,  Yukihiro Kanechika ,  Masakatsu Maeda

    IPC分类号： H01J17/16

    CPC分类号： C04B35/64 ,  C04B35/581 ,  C04B35/62625 ,  C04B35/6264 ,  C04B35/6303 ,  C04B2235/3205 ,  C04B2235/3222 ,  C04B2235/3224 ,  C04B2235/3225 ,  C04B2235/5436 ,  C04B2235/5445 ,  C04B2235/652 ,  C04B2235/656 ,  C04B2235/658 ,  C04B2235/77 ,  C04B2235/85 ,  C04B2235/9607 ,  C04B2235/9646 ,  Y10T428/249921 ,  Y10T428/268

    摘要： An insulating material high both in thermal conductivity and light reflectance, and a submount high in heat radiatability for mounting an LED element thereon, capable of raising a light utilization factor and quickly radiating heat generated from the element. For example, used as a substrate material of a submount is a nitride sintered body having a reflectance of light in the wavelength region of from 350 nm to 800 nm of 50% or more and a reflectance of light with a wavelength of 700 nm of 60% or more, obtained by sintering a preform consisting of a composition containing 100 parts by mass of aluminum nitride powder and 0.5 to 10 parts by mass of a compound containing an alkaline earth metal such as 3CaO×Al2O3 in an inert atmosphere containing a specific quantity of carbon vapor, or by burning a coat of a nitride paste applied on a base substrate having a heat resistance at a predetermined temperature.

    摘要翻译： 高导热性和光反射率高的绝缘材料，以及用于安装其上的LED元件的高散热性的基座，能够提高光利用率并快速散发由元件产生的热量。 例如，用作基座的基板材料是具有350nm至800nm的波长区域中的光的反射率为50％以上的氮化物烧结体，波长为700nm的光的反射率为60nm 通过在含有特定量的惰性气氛中烧结由含有100质量份氮化铝粉末的组合物和0.5〜10质量份含有碱土金属如3CaO×Al 2 O 3的化合物组成的预成型体而获得的％ 的碳蒸气，或者通过将施加在具有预定温度的耐热性的基底上的氮化物糊的烧成。

    FM modulator
    9.
    发明授权
    FM modulator 失效
    FM调制器

    公开(公告)号：US07587180B2

    公开(公告)日：2009-09-08

    申请号：US11583176

    申请日：2006-10-19

    申请人： Masakatsu Maeda ,  Kaoru Ishida

    发明人： Masakatsu Maeda ,  Kaoru Ishida

    IPC分类号： H04B1/04

    CPC分类号： H03C3/0925 ,  H03C3/0941 ,  H03C3/095 ,  H03C3/0966 ,  H03C3/0983

    摘要： An FM modulator measuring an f-V characteristic of a voltage controlled oscillator in a reduced time period. In the FM modular a characteristic measurement time control section 110 notifies a correction section 108 of a time at which a measurement of the f-V characteristic of a voltage controlled oscillator 103 is to start and a time at which the measurement of the f-V characteristic of the voltage controlled oscillator 103 is to and while a carrier wave frequency is being changed to a predetermined frequency. Thus, the correction section 108 measures the f-V characteristic of the voltage controlled oscillator 103 in a reduced time period.

    摘要翻译： 在缩短的时间周期内测量压控振荡器的f-V特性的FM调制器。 在FM模块中，特性测量时间控制部分110向校正部分108通知压控振荡器103的fV特性的测量开始的时间和电压的fV特性的测量的时间 受控振荡器103正在将载波频率改变为预定频率。 因此，校正部分108在减小的时间段内测量压控振荡器103的f-V特性。

    SEMICONDUCTOR APPARATUS AND RADIO CIRCUIT APPARATUS USING THE SAME
    10.
    发明申请
    SEMICONDUCTOR APPARATUS AND RADIO CIRCUIT APPARATUS USING THE SAME 失效
    使用其的半导体装置和无线电电路装置

    公开(公告)号：US20090115466A1

    公开(公告)日：2009-05-07

    申请号：US11994542

    申请日：2006-06-27

    申请人： Masakatsu Maeda

    发明人： Masakatsu Maeda

    IPC分类号： H03B19/00

    CPC分类号： H04B1/30 ,  H03L7/183

    摘要： A semiconductor apparatus includes a signal source 7 that outputs a signal of predetermined frequency, a frequency divider 15 that receives the output signal of the signal source and is capable of switching the output signal to two or more frequency division ratios, a delta-sigma modulator 16 that controls the frequency division ratio of the frequency divider, and a bandpass filter 17 that receives an output of the frequency divider. The frequency of the input signal of the frequency divider is divided by the frequency division ratio controlled by the delta-sigma modulator, and quantization noise appearing in the output of the frequency divider generated by the delta-sigma modulator is attenuated with the bandpass filter. The semiconductor apparatus easily can convert a signal output by a single signal source to a signal of predetermined frequency and supply a plurality of signals of predetermined frequency using a simple configuration with reduced chip size.

    摘要翻译： 半导体装置包括输出预定频率的信号的信号源7，接收信号源的输出信号并且能够将输出信号切换到两个或更多个分频比的分频器15，Δ-Σ调制器 16，其控制分频器的分频比，以及带通滤波器17，其接收分频器的输出。 分频器的输入信号的频率除以由Δ-Σ调制器控制的分频比，并且由Δ-Σ调制器产生的分频器的输出中出现的量化噪声被带通滤波器衰减。 半导体装置可以容易地将由单个信号源输出的信号转换为预定频率的信号，并且使用具有减小的芯片尺寸的简单配置来提供预定频率的多个信号。