Copper thick film conductor composition
    6.
    发明授权
    Copper thick film conductor composition 失效
    铜厚膜导体组成

    公开(公告)号:US4865772A

    公开(公告)日:1989-09-12

    申请号:US271543

    申请日:1988-11-15

    CPC分类号: H05K1/092 H01B1/16

    摘要: A copper-containing thick film conductor composition comprising 55 to 95% by weight of an inorganic powder and 45 to 5% by weight of an organic medium, said inorganic powder comprising 100 parts by weight of a copper powder, 0.05 to 3 parts by weight of a zinc oxide powder, 1 to 7 parts by weight of a lead borate glass powder, 0.2 to 5 parts by weight of a borosilicate glass powder and 0 to 10 parts by weight of a copper snboxide powder having an average particle size of not more than 1.0 .mu.m. The composition of the present invention is excellent in solderability and adhesive strength to the substrate.

    摘要翻译: 一种含有55〜95重量%的无机粉末和45〜5重量%的有机介质的含铜厚膜导体组合物,所述无机粉末含有100重量份的铜粉,0.05〜3重量份 的氧化锌粉末,1〜7重量份的硼酸铅玻璃粉末,0.2〜5重量份的硼硅酸盐玻璃粉末和0〜10重量份的平均粒径不大于的锡粉末粉末 超过1.0亩。 本发明的组合物对于基材的可焊性和粘合强度优异。

    Metal-ceramic composite substrate
    9.
    发明授权
    Metal-ceramic composite substrate 失效
    金属陶瓷复合基板

    公开(公告)号:US6071592A

    公开(公告)日:2000-06-06

    申请号:US898880

    申请日:1997-07-23

    摘要: A metal-ceramic composite circuit substrate having a ceramic substrate and a metal plate joined to at least one main surface of the ceramic substrate, the rate of voids formed on at least a joint surface at a semiconductor mounting portion of the metal plate per unit surface area being not more than 1.49%. The diameter of void formed on at least the joint surface at a semiconductor mounting portion of the metal plate is not larger than 0.7 mm. The surface undulation of the ceramic substrate is not more than 15 .mu.m/20 mm measured by a surface roughness tester in case that the ceramic substrate is joined directly to the metal plate. The metal plate is joined to the ceramic substrate through a brazing material containing at least one active metal selected from a group consisting of Ti, Zr, Hf and Nb. The ceramic substrate is at least one kind of ceramic substrate selected from a group consisting of Al.sub.2 O.sub.3, AlN, BeO, SiC, Si.sub.3 N.sub.4 and ZrO.sub.2.

    摘要翻译: 一种金属陶瓷复合电路基板,其具有与陶瓷基板的至少一个主面接合的陶瓷基板和金属板,在每单位表面的金属板的半导体安装部的至少接合面上形成的空隙率 面积不超过1.49%。 在金属板的半导体安装部的至少接合面上形成的空隙的直径不大于0.7mm。 在将陶瓷基板直接接合到金属板的情况下,通过表面粗糙度测量仪测量陶瓷基板的表面起伏不超过15μm/ 20mm。 金属板通过含有选自Ti,Zr,Hf和Nb中的至少一种活性金属的钎焊材料与陶瓷基板接合。 陶瓷基板是选自Al 2 O 3,AlN,BeO,SiC,Si 3 N 4和ZrO 2中的至少一种陶瓷基板。