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    Thin Film Transistor, Method For Manufacturing The Same And Display Using The Same
    1.
    发明申请
    Thin Film Transistor, Method For Manufacturing The Same And Display Using The Same 有权
    薄膜晶体管，制造方法及其使用方法

    公开(公告)号：US20100276692A1

    公开(公告)日：2010-11-04

    申请号：US12833822

    申请日：2010-07-09

    申请人： Mamoru Ishizaki ,  Manabu Ito ,  Masato Kon ,  Osamu Kina ,  Ryohei Matsubara

    发明人： Mamoru Ishizaki ,  Manabu Ito ,  Masato Kon ,  Osamu Kina ,  Ryohei Matsubara

    IPC分类号： H01L29/786

    CPC分类号： H01L29/7869 ,  H01L27/1225 ,  H01L27/1248 ,  H01L29/66969

    摘要： One embodiment of the present invention is a thin film transistor having a gate electrode formed on an insulating substrate, a gate wire connected to the gate electrode, a capacitor electrode, a capacitor wire connected to the capacitor electrode, a gate insulator formed on the gate electrode, an oxide semiconductor pattern formed on the gate insulator, a sealing layer formed on the oxide semiconductor pattern, a drain electrode and a source electrode formed on the sealing layer, a drain wire connected to the drain electrode and a pixel electrode connected to the source electrode, the drain wire and the pixel electrode being in the same layer as the drain electrode and the source electrode. wherein the gate wire, the capacitor electrode and the capacitor wire are in the same layer as the gate electrode, and wherein the sealing layer does not cover a connection part of the source electrode and a connection part of the drain electrode and wherein the drain electrode and the source electrode are connected to the oxide semiconductor pattern via the connection part of the drain electrode and the connection part of the source electrode,

    摘要翻译： 本发明的一个实施例是一种薄膜晶体管，其具有形成在绝缘基板上的栅电极，连接到栅极的栅极线，电容器电极，连接到电容器电极的电容器线，形成在栅极上的栅极绝缘体 电极，形成在栅极绝缘体上的氧化物半导体图案，形成在氧化物半导体图案上的密封层，形成在密封层上的漏电极和源电极，连接到漏电极的漏极和连接到漏电极的像素电极 源电极，漏极线和像素电极处于与漏电极和源极电极相同的层中。 其中所述栅极线，所述电容器电极和所述电容器线处于与所述栅电极相同的层中，并且其中所述密封层不覆盖所述源电极的连接部分和所述漏电极的连接部分，并且其中所述漏电极 并且源电极经由漏电极的连接部分和源电极的连接部分连接到氧化物半导体图案，

    Thin film transistor, method for manufacturing the same and display using the same
    3.
    发明授权
    Thin film transistor, method for manufacturing the same and display using the same 有权
    薄膜晶体管及其制造方法及其显示方法

    公开(公告)号：US07884368B2

    公开(公告)日：2011-02-08

    申请号：US12833822

    申请日：2010-07-09

    申请人： Mamoru Ishizaki ,  Manabu Ito ,  Masato Kon ,  Osamu Kina ,  Ryohei Matsubara

    发明人： Mamoru Ishizaki ,  Manabu Ito ,  Masato Kon ,  Osamu Kina ,  Ryohei Matsubara

    IPC分类号： H01L33/00

    CPC分类号： H01L29/7869 ,  H01L27/1225 ,  H01L27/1248 ,  H01L29/66969

    摘要： One embodiment of the present invention is a thin film transistor having a gate electrode formed on an insulating substrate, a gate wire connected to the gate electrode, a capacitor electrode, a capacitor wire connected to the capacitor electrode, a gate insulator formed on the gate electrode, an oxide semiconductor pattern formed on the gate insulator, a sealing layer formed on the oxide semiconductor pattern, a drain electrode and a source electrode formed on the sealing layer, a drain wire connected to the drain electrode and a pixel electrode connected to the source electrode, the drain wire and the pixel electrode being in the same layer as the drain electrode and the source electrode. Wherein the gate wire, the capacitor electrode and the capacitor wire are in the same layer as the gate electrode, and wherein the sealing layer does not cover a connection part of the source electrode and a connection part of the drain electrode and wherein the drain electrode and the source electrode are connected to the oxide semiconductor pattern via the connection part of the drain electrode and the connection part of the source electrode.

    摘要翻译： 本发明的一个实施例是一种薄膜晶体管，其具有形成在绝缘基板上的栅电极，连接到栅极的栅极线，电容器电极，连接到电容器电极的电容器线，形成在栅极上的栅极绝缘体 电极，形成在栅极绝缘体上的氧化物半导体图案，形成在氧化物半导体图案上的密封层，形成在密封层上的漏电极和源电极，连接到漏电极的漏极和连接到漏电极的像素电极 源电极，漏极线和像素电极处于与漏电极和源极电极相同的层中。 其中栅极线，电容器电极和电容器线与栅电极处于相同的层中，并且其中密封层不覆盖源电极的连接部分和漏电极的连接部分，并且其中漏电极 并且源电极经由漏电极的连接部分和源电极的连接部分连接到氧化物半导体图案。

    Structure with transistor
    4.
    发明授权
    Structure with transistor 有权
    晶体管结构

    公开(公告)号：US07795613B2

    公开(公告)日：2010-09-14

    申请号：US11787554

    申请日：2007-04-17

    申请人： Manabu Ito ,  Masato Kon ,  Mamoru Ishizaki ,  Norimasa Sekine

    发明人： Manabu Ito ,  Masato Kon ,  Mamoru Ishizaki ,  Norimasa Sekine

    IPC分类号： H01L21/16

    CPC分类号： H01L29/7869 ,  H01L29/78603

    摘要： A structure with a transistor is disclosed comprising a substrate, a gas barrier layer on the substrate, and a transistor on the gas barrier layer. The transistor can include an oxide semiconductor layer. The oxide semiconductor layers can comprise In—Ga—Zn—O. A display, such as a liquid crystal display, can have such a structure.

    摘要翻译： 公开了具有晶体管的结构，其包括衬底，衬底上的阻气层和阻气层上的晶体管。 晶体管可以包括氧化物半导体层。 氧化物半导体层可以包括In-Ga-Zn-O。 诸如液晶显示器的显示器可以具有这样的结构。

    Structure with transistor
    7.
    发明申请
    Structure with transistor 有权
    晶体管结构

    公开(公告)号：US20080258139A1

    公开(公告)日：2008-10-23

    申请号：US11787554

    申请日：2007-04-17

    申请人： Manabu Ito ,  Masato Kon ,  Manoru Ishizaki ,  Norimasa Sekine

    发明人： Manabu Ito ,  Masato Kon ,  Manoru Ishizaki ,  Norimasa Sekine

    IPC分类号： H01L21/16

    CPC分类号： H01L29/7869 ,  H01L29/78603

    摘要： A structure with a transistor is disclosed comprising a substrate, a gas barrier layer on the substrate, and a transistor on the gas barrier layer. The transistor can include an oxide semiconductor layer. The oxide semiconductor layers can comprise In—Ga—Zn—O. A display, such as a liquid crystal display, can have such a structure.

    摘要翻译： 公开了具有晶体管的结构，其包括衬底，衬底上的阻气层和阻气层上的晶体管。 晶体管可以包括氧化物半导体层。 氧化物半导体层可以包括In-Ga-Zn-O。 诸如液晶显示器的显示器可以具有这样的结构。

    ITO thin film, method of producing the same, transparent conductive film, and touch panel
    8.
    发明申请
    ITO thin film, method of producing the same, transparent conductive film, and touch panel 审中-公开
    ITO薄膜，其制造方法，透明导电膜和触摸面板

    公开(公告)号：US20060003188A1

    公开(公告)日：2006-01-05

    申请号：US11184811

    申请日：2005-07-20

    申请人： Shingo Ohno ,  Yoshinori Iwabuchi ,  Masato Yoshikawa ,  Yuzo Shigesato ,  Masato Kon

    发明人： Shingo Ohno ,  Yoshinori Iwabuchi ,  Masato Yoshikawa ,  Yuzo Shigesato ,  Masato Kon

    IPC分类号： H01L21/44 ,  B32B19/00

    CPC分类号： C23C14/3464 ,  C23C14/0021 ,  C23C14/086 ,  C23C14/3414

    摘要： A crystalline ITO transparent conductive thin film is formed by heating a substrate at low temperature during the sputtering film formation. The crystalline ITO transparent conductive thin film is formed by using an ITO target comprising In2O3 and SnO2 where a weight percentage of SnO2 is 6% or less based on the total weight of In2O3 and SnO2 in the ITO target, and heating the substrate at 90 to 170° C. during the sputtering film formation. The crystalline ITO film with high strength and mechanical durability can be formed by heating at low temperature, which meets heat resistance of the substrate, without requiring annealing after the film formation. There are provided a transparent conductive film comprising a polymer film 4 and an ITO transparent conductive film 5 formed thereon, and a touch panel comprising the transparent conductive film.

    摘要翻译： 通过在溅射成膜期间在低温下加热基板来形成结晶ITO透明导电薄膜。 结晶ITO透明导电薄膜通过使用包含In 2 N 3 O 3和SnO 2 2的ITO靶形成，其中SnO 2的重量百分比 基于ITO靶中的In 2 N 3 O 3和SnO 2 N 2的总重量，SUB> 2 <6％或更小 在溅射成膜期间在90〜170℃下加热基板。 具有高强度和机械耐久性的结晶ITO膜可以通过在低温下加热而形成，其满足基板的耐热性，而不需要在成膜后退火。 提供了包含聚合物膜4和形成在其上的ITO透明导电膜5的透明导电膜，以及包括透明导电膜的触摸面板。