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公开(公告)号：US20070103085A1
公开(公告)日：2007-05-10
申请号：US11593794
申请日：2006-11-07
申请人： Shigeo Itoh , Masateru Taniguchi , Masayoshi Nagao
发明人： Shigeo Itoh , Masateru Taniguchi , Masayoshi Nagao
IPC分类号： H01J29/96
CPC分类号： H01J31/127 , G09G3/2014 , G09G3/22 , G09G2300/0842 , G09G2360/144
摘要： An image display device is provided in which the overall brightness of an image can be varied without adversely affecting hue and contrast. The image display device includes emitters 16 connected to a cathode electrode 15, a gate electrode 13, an anode electrode 3, transistors Tr1 and Tr2, and a capacitor 12. A voltage applied to the capacitor 12 is varied to display an image. A constant voltage is applied to the gate electrode 13 to change a time ratio Du. Thus, the overall brightness of an image can be adjusted.
摘要翻译： 提供一种图像显示装置，其中可以改变图像的整体亮度，而不会不利地影响色调和对比度。 图像显示装置包括连接到阴极电极15，栅极电极13，阳极电极3，晶体管Tr 1和Tr 2以及电容器12的发射极16。施加到电容器12的电压被改变以显示图像。 将恒定电压施加到栅电极13以改变时间比率Du。 因此，可以调整图像的整体亮度。
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公开(公告)号：US07112920B2
公开(公告)日：2006-09-26
申请号：US10827813
申请日：2004-04-20
CPC分类号： H01J1/3044 , H01J31/127 , H01J2201/30403
摘要： A field emission electron source capable of achieving large current density is provided at low cost with good productivity. An insulating layer is formed on a substrate and has one or more openings; and an extraction electrode is formed on the insulating layer. In one or more of the openings, a plurality of emitters, each of which emits an electron by an electric field from the extraction electrode, are formed on the substrate.
摘要翻译： 以低成本提供能够实现大电流密度的场致发射电子源，生产率高。 绝缘层形成在基板上并具有一个或多个开口; 并且在绝缘层上形成引出电极。 在一个或多个开口中，在基板上形成多个发射体，每个发射体通过来自引出电极的电场发射电子。
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3.发明申请Field-emission electron source, method of manufacturing the same, and image display apparatus 失效场发射电子源及其制造方法以及图像显示装置公开(公告)号：US20070184747A1
公开(公告)日：2007-08-09
申请号：US11729442
申请日：2007-03-29
IPC分类号： H01J9/00
CPC分类号： H01J1/3044 , H01J9/025 , H01J2201/30407
摘要： A stable field-emission electron source that does not suffer from a current drop even after a high-current density operation for a long time is provided. The field-emission electron source includes: a substrate; an insulating layer that is formed on the substrate and that has a plurality of openings; cathodes arranged at the respective openings in order to emit electron beams; a lead electrode formed on the insulating layer in order to control emission of electrons from the respective cathodes; and a surface-modifying layer formed on the surface of each of the cathodes emitting electrons, comprising a chemical bond between a cathode material composing the cathodes and a material different from the cathode material.
摘要翻译： 提供即使在长时间的高电流密度操作之后也不会受到电流降低的稳定的场致发射电子源。 场发射电子源包括：衬底; 绝缘层，其形成在所述基板上并且具有多个开口; 阴极排列在相应的开口处以便发射电子束; 形成在所述绝缘层上的引线电极，以便控制来自各个阴极的电子的发射; 以及形成在每个发射电子的阴极的表面上的表面改性层，包括构成阴极的阴极材料和不同于阴极材料的材料之间的化学键。
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4.发明授权公开(公告)号：US07215072B2
公开(公告)日：2007-05-08
申请号：US10806803
申请日：2004-03-23
IPC分类号： H01J1/05
CPC分类号： H01J1/3044 , H01J9/025 , H01J2201/30407
摘要： A stable field-emission electron source that does not suffer from a current drop even after a high-current density operation for a long time is provided. The field-emission electron source includes: a substrate; an insulating layer that is formed on the substrate and that has a plurality of openings; cathodes arranged at the respective openings in order to emit electron beams; a lead electrode formed on the insulating layer in order to control emission of electrons from the respective cathodes; and a surface-modifying layer formed on the surface of each of the cathodes emitting electrons, comprising a chemical bond between a cathode material composing the cathodes and a material different from the cathode material.
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5.发明授权Field-emission electron source, method of manufacturing the same, and image display apparatus 失效场发射电子源及其制造方法以及图像显示装置公开(公告)号：US07588475B2
公开(公告)日：2009-09-15
申请号：US11729442
申请日：2007-03-29
IPC分类号： H01J9/00
CPC分类号： H01J1/3044 , H01J9/025 , H01J2201/30407
摘要： A stable field-emission electron source that does not suffer from a current drop even after a high-current density operation for a long time is provided. The field-emission electron source includes: a substrate; an insulating layer that is formed on the substrate and that has a plurality of openings; cathodes arranged at the respective openings in order to emit electron beams; a lead electrode formed on the insulating layer in order to control emission of electrons from the respective cathodes; and a surface-modifying layer formed on the surface of each of the cathodes emitting electrons, comprising a chemical bond between a cathode material composing the cathodes and a material different from the cathode material.
摘要翻译： 提供即使在长时间的大电流密度操作之后也不会受到电流降低的稳定的场致发射电子源。 场发射电子源包括：衬底; 绝缘层，其形成在所述基板上并且具有多个开口; 阴极排列在相应的开口处以便发射电子束; 形成在所述绝缘层上的引线电极，以便控制来自各个阴极的电子的发射; 以及形成在发射电子的每个阴极的表面上的表面改性层，包括构成阴极的阴极材料与不同于阴极材料的材料之间的化学键。
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公开(公告)号：US07375400B2
公开(公告)日：2008-05-20
申请号：US11593794
申请日：2006-11-07
申请人： Shigeo Itoh , Masateru Taniguchi , Masayoshi Nagao
发明人： Shigeo Itoh , Masateru Taniguchi , Masayoshi Nagao
IPC分类号： H01L29/06
CPC分类号： H01J31/127 , G09G3/2014 , G09G3/22 , G09G2300/0842 , G09G2360/144
摘要： An image display device is provided in which the overall brightness of an image can be varied without adversely affecting hue and contrast. The image display device includes emitters 16 connected to a cathode electrode 15, a gate electrode 13, an anode electrode 3, transistors Tr1 and Tr2, and a capacitor 12. A voltage applied to the capacitor 12 is varied to display an image. A constant voltage is applied to the gate electrode 13 to change a time ratio Du. Thus, the overall brightness of an image can be adjusted.
摘要翻译： 提供一种图像显示装置，其中可以改变图像的整体亮度，而不会不利地影响色调和对比度。 图像显示装置包括连接到阴极电极15，栅电极13，阳极电极3，晶体管Tr 1和Tr 2以及电容器12的发射极16。 改变施加到电容器12的电压以显示图像。 将恒定电压施加到栅电极13以改变时间比率Du。 因此，可以调整图像的整体亮度。
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公开(公告)号：US20120229051A1
公开(公告)日：2012-09-13
申请号：US13509537
申请日：2010-11-10
申请人： Masayoshi Nagao , Tomoya Yoshida , Yoichiro Neo
发明人： Masayoshi Nagao , Tomoya Yoshida , Yoichiro Neo
IPC分类号： H01J29/46
CPC分类号： H01J3/022 , H01J31/127 , H01J2203/0208 , H01J2203/0228 , H01J2329/4604 , H01J2329/4626
摘要： In a field emission device, the fundamental cause of spherical aberration in an emitted electron beam trajectory is eliminated or mitigated. An aberration suppressor electrode 31 is provided at a lower vertical position than an extraction gate electrode 13 so its opening inner peripheral edge 31e faces a position near an emitter tip 11tp. The vertical position of the opening inner peripheral edge 31e of the aberration suppressor electrode 31 is made lower than the vertical position of the emitter tip 11tp. An aberration suppressing voltage Vsp is applied to the aberration suppressor electrode 31 that is a lower voltage than the potential of the emitter 11 and controls equipotential lines near the emitter tip 11tp to make them parallel.
摘要翻译： 在场发射器件中，消除或减轻发射的电子束轨迹中球面像差的根本原因。 在比提取栅电极13低的垂直位置处设置像差抑制电极31，使得其开口内周边缘31e面向发射极尖端11tp附近的位置。 使像差抑制电极31的开口内周缘31e的垂直位置比发射极尖端11tp的垂直位置低。 像差抑制电压Vsp被施加到比发射极11的电位低的电压的像差抑制电极31，并且控制发射极尖端11tp附近的等电位线使其平行。
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公开(公告)号：US09024544B2
公开(公告)日：2015-05-05
申请号：US13509537
申请日：2010-11-10
申请人： Masayoshi Nagao , Tomoya Yoshida , Yoichiro Neo
发明人： Masayoshi Nagao , Tomoya Yoshida , Yoichiro Neo
CPC分类号： H01J3/022 , H01J31/127 , H01J2203/0208 , H01J2203/0228 , H01J2329/4604 , H01J2329/4626
摘要： In a field emission device, the fundamental cause of spherical aberration in an emitted electron beam trajectory is eliminated or mitigated. An aberration suppressor electrode 31 is provided at a lower vertical position than an extraction gate electrode 13 so its opening inner peripheral edge 31e faces a position near an emitter tip 11tp. The vertical position of the opening inner peripheral edge 31e of the aberration suppressor electrode 31 is made lower than the vertical position of the emitter tip 11tp. An aberration suppressing voltage Vsp is applied to the aberration suppressor electrode 31 that is a lower voltage than the potential of the emitter 11 and controls equipotential lines near the emitter tip 11tp to make them parallel.
摘要翻译： 在场发射器件中，消除或减轻发射的电子束轨迹中球面像差的根本原因。 在比提取栅电极13低的垂直位置处设置像差抑制电极31，使得其开口内周边缘31e面向发射极尖端11tp附近的位置。 使像差抑制电极31的开口内周缘31e的垂直位置比发射极尖端11tp的垂直位置低。 像差抑制电压Vsp被施加到比发射极11的电位低的电压的像差抑制电极31，并且控制发射极尖端11tp附近的等电位线使其平行。
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公开(公告)号：US20050001536A1
公开(公告)日：2005-01-06
申请号：US10827813
申请日：2004-04-20
CPC分类号： H01J1/3044 , H01J31/127 , H01J2201/30403
摘要： A field emission electron source capable of achieving large current density is provided at low cost with good productivity. An insulating layer is formed on a substrate and has one or more openings; and an extraction electrode is formed on the insulating layer. In one or more of the openings, a plurality of emitters, each of which emits an electron by an electric field from the extraction electrode, are formed on the substrate.
摘要翻译： 以低成本提供能够实现大电流密度的场致发射电子源，生产率高。 绝缘层形成在基板上并具有一个或多个开口; 并且在绝缘层上形成引出电极。 在一个或多个开口中，在基板上形成多个发射体，每个发射体通过来自引出电极的电场发射电子。
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