Abstract:
A solid-state imaging device includes first-group pixels 41, second-group pixels 42 skipped during thinning drive, and a scanning section 13. The scanning section 13 drives each of the first-group pixels 41 to perform read operation of outputting the output signal and initializing the amount of the signal charge accumulated in the photoelectric conversion element to a first level, and also drives each of the second-group pixels 42 to perform discharge operation of initializing the amount of the signal charge accumulated in the photoelectric conversion element to a second level that is higher than the first level and lower than a saturation signal level of the photoelectric conversion element 12.
Abstract:
An amplification type solid state imaging device in use includes at least a light-receiving portion 10 formed by arranging on a semiconductor substrate 7 one-dimensionally or two-dimensionally a plurality of pixels that convert incident light to signal charge and output electric signals corresponding to the amount of the signal charge, a reader for reading out sequentially the electric signals from the respective pixels, a noise rejection circuit 11 for suppressing spurious signals for the electric signals read out by the reader, and a first light-shielding layer 1 positioned on the upper part of the light-receiving portion 10 so as to restrict entry of light into parts other than photoelectric conversion portions 10a of the pixels. Furthermore, a second light-shielding layer 2 for restricting entry of light into the noise rejection circuit 11 is provided on the upper part of the noise rejection circuit 11.
Abstract:
A solid-state imaging device includes first-group pixels 41, second-group pixels 42 skipped during thinning drive, and a scanning section 13. The scanning section 13 drives each of the first-group pixels 41 to perform read operation of outputting the output signal and initializing the amount of the signal charge accumulated in the photoelectric conversion element to a first level, and also drives each of the second-group pixels 42 to perform discharge operation of initializing the amount of the signal charge accumulated in the photoelectric conversion element to a second level that is higher than the first level and lower than a saturation signal level of the photoelectric conversion element 12.
Abstract:
A solid-state image sensing element (1) has a main face provided with an imaging region (1a) in which unit pixels containing photoelectric conversion elements are formed in matrix. Peripheral circuit elements (3, 4) are configured to control imaging operation of the solid-state image sensing element (1) or to perform signal processing of an image output of the solid-state image sensing element (1). The imaging region (1a) is covered with a transparent material (2). The peripheral circuit elements (3, 4) are mounted to a region of the main face of the solid-state image sensing element (1) except for the imaging region (1a) such that main faces of the peripheral circuit elements (3, 4) face the main face of the solid-state image sensing element (1).
Abstract:
An imaging device outputs brightness information according to an amount of incident light and includes: an imaging unit that includes a plurality of unit cells arranged one dimensionally or two-dimensionally, each unit cell including a photoelectric conversion part that generates a first output voltage in a reset state and a second output voltage according to an amount of incident light, and each unit cell generating a reset voltage that corresponds to the first output voltage and a read voltage that corresponds to the second output voltage; and an output unit operable to output, in relation to each unit cell, brightness information indicating a difference between the reset voltage and the read voltage when normal light is incident to the imaging device and the read voltage is in a predetermined range, and brightness information indicating high brightness when strong light is incident to the imaging device and the read voltage is not in the predetermined range.
Abstract:
An imaging device outputs brightness information according to an amount of incident light and includes: an imaging unit that includes a plurality of unit cells arranged one dimensionally or two-dimensionally, each unit cell including a photoelectric conversion part that generates a first output voltage in a reset state and a second output voltage according to an amount of incident light, and each unit cell generating a reset voltage that corresponds to the first output voltage and a read voltage that corresponds to the second output voltage; and an output unit operable to output, in relation to each unit cell, brightness information indicating a difference between the reset voltage and the read voltage when normal light is incident to the imaging device and the read voltage is in a predetermined range, and brightness information indicating high brightness when strong light is incident to the imaging device and the read voltage is not in the predetermined range.
Abstract:
A solid-state image pickup device consists of a plurality of pixels arranged in a matrix for outputting an image signal corresponding to the received light intensity. The solid-state image pickup device includes: reset switches (13,23) for opening/closing between a VDDCELL that repeatedly and cyclically outputs a high potential and a low potential and an electric charge holding section in each pixel; reset signal lines (97,98) connected to pixels of the same row; a row scan circuit (80) for successively selecting rows, always giving Hi impedance or Lo impedance to the reset signal of the selected row and Hi impedance to the reset signal lines of the non-selected row; and an ALLRS circuit 94 for giving the Lo potential to the reset line of the non-selected row before and after the rise of VDCELL from a low potential to high potential. Thus, the solid-state image pickup device can reduce its size and increase its operation speed while suppressing lowering of the dynamic range.
Abstract:
A solid-state image pickup device consists of a plurality of pixels arranged in a matrix for outputting an image signal corresponding to the received light intensity. The solid-state image pickup device includes: reset switches (13,23) for opening/closing between a VDDCELL that repeatedly and cyclically outputs a high potential and a low potential and an electric charge holding section in each pixel; reset signal lines (97,98) connected to pixels of the same row; a row scan circuit (80) for successively selecting rows, always giving Hi impedance or Lo impedance to the reset signal of the selected row and Hi impedance to the reset signal lines of the non-selected row; and an ALLRS circuit 94 for giving the Lo potential to the reset line of the non-selected row before and after the rise of VDCELL from a low potential to high potential. Thus, the solid-state image pickup device can reduce its size and increase its operation speed while suppressing lowering of the dynamic range.
Abstract:
A plurality of pixels, each including a photodiode that can make a transition from a first potential state (reset state) into a second potential state variable with the quantity of incident light or vice versa, are provided. A unit compensator includes first and second storage devices implementable as respective MOS capacitors. The first storage device stores thereon charge in a quantity proportional to a difference between a signal potential &phgr;s corresponding to the second potential state of each pixel and a reference potential &phgr;0. The second storage device stores thereon charge in a quantity proportional to a difference between a fixed potential &phgr;d and the reference potential &phgr;0. When a reset potential &phgr;r is supplied from an associated pixel, these storage devices are short-circuited with each other, thereby transferring charge in a quantity proportional to a potential difference (&phgr;s−&phgr;r) between these storage devices. After these storage devices have been electrically isolated from each other, the potential difference (&phgr;s−&phgr;r) is sensed based on the quantity of residual charge in the second storage device and then output. In this manner, a variation in threshold voltage among the amplifying transistors within the pixels can be compensated for.
Abstract:
In a solid state imaging apparatus, a normal function to read a pixel signal and an electronic shutter function are both realized by using a single shift register. The shift register successively transmits a driving signal supplied from a control unit. A selecting circuit is disposed correspondingly to each row of an imaging unit, and when the driving signal is output from a register corresponding to the row, the selecting circuit selectively executes a read operation or a reset operation in pixels belonging to the corresponding row in accordance with outputs of preceding and following registers. The driving signal is set to be differently supplied between the normal mode and the electronic shutter mode, so that outputs of preceding and following registers can be different between these modes. As a result, a read operation and a reset operation can be selectively conducted in the normal mode and the electronic shutter mode, respectively in the imaging unit.