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公开(公告)号：US20080149908A1
公开(公告)日：2008-06-26
申请号：US11980431
申请日：2007-10-31
Applicant: Yoon-ho Khang , Daniel Wamwangi , Matthias Wuttig , Ki-joon Kim , Dong-seok Suh
Inventor： Yoon-ho Khang , Daniel Wamwangi , Matthias Wuttig , Ki-joon Kim , Dong-seok Suh
CPC classification number: C01B19/007 , C01P2002/52 , C01P2006/33 , C01P2006/34 , H01L27/2436 , H01L45/06 , H01L45/1233 , H01L45/141
Abstract: Provided are a doped phase change material and a phase change memory device including the phase change material. The phase change material, which may be doped with Se, has a higher crystallization temperature than a Ge2Sb2Te5 (GST) material. The phase change material may be InXSbYTeZSe100−(X+Y+Z). The index X of indium (In) is in the range of 25 wt %≦X≦60 wt %. The index Y of antimony (Sb) is in the range of 1 wt %≦Y≦17 wt %. The index Z of tellurium (Te) is in the range of 0 wt %
Abstract translation: 提供了掺杂相变材料和包括相变材料的相变存储器件。 可以掺杂有Se的相变材料具有比Ge 2 Sb 2 Sb 5（GST）材料更高的结晶温度 。 相变材料可以是在<！ - SIPO
- >中，Z 100，（X + Y + Z） 。 铟（In）的指数X在25重量％<= X <= 60重量％的范围内。 锑（Sb）的指数Y在1重量％<= Y <17重量％的范围内。 碲（Te）的指数Z在0重量％ -
公开(公告)号：US07763886B2
公开(公告)日：2010-07-27
申请号：US11980431
申请日：2007-10-31
Applicant: Yoon-ho Khang , Daniel Wamwangi , Matthias Wuttig , Ki-joon Kim , Dong-seok Suh
Inventor： Yoon-ho Khang , Daniel Wamwangi , Matthias Wuttig , Ki-joon Kim , Dong-seok Suh
CPC classification number: C01B19/007 , C01P2002/52 , C01P2006/33 , C01P2006/34 , H01L27/2436 , H01L45/06 , H01L45/1233 , H01L45/141
Abstract: Provided are a doped phase change material and a phase change memory device including the phase change material. The phase change material, which may be doped with Se, has a higher crystallization temperature than a Ge2Sb2Te5 (GST) material. The phase change material may be InXSbYTeZSe100−(X+Y+Z). The index X of indium (In) is in the range of 25 wt %≦X≦60 wt %. The index Y of antimony (Sb) is in the range of 1 wt %≦Y≦17 wt %. The index Z of tellurium (Te) is in the range of 0 wt %
Abstract translation: 提供了掺杂相变材料和包括相变材料的相变存储器件。 可以掺杂Se的相变材料具有比Ge2Sb2Te5（GST）材料更高的结晶温度。 相变材料可以是InXSbYTeZSe100-（X + Y + Z）。 铟（In）的指数X在25重量％＆lt; lE; X＆lt; lE; 60重量％的范围内。 锑（Sb）的指数Y在1重量％＆lt; 1E; Y＆lt; 1; 17重量％的范围内。 碲（Te）的指数Z在0重量％
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3.发明申请公开(公告)号：US20090179185A1
公开(公告)日：2009-07-16
申请号：US12285449
申请日：2008-10-06
Applicant: Youn-seon Kang , Daniel Wamwangi , Matthias Wuttig , Ki-joon Kim , Yoon-ho Khang , Cheol-kyu Kim , Dong-seok Suh , Tae-yon Lee
Inventor： Youn-seon Kang , Daniel Wamwangi , Matthias Wuttig , Ki-joon Kim , Yoon-ho Khang , Cheol-kyu Kim , Dong-seok Suh , Tae-yon Lee
CPC classification number: H01L27/2436 , H01L45/06 , H01L45/1233 , H01L45/148 , H01L45/1625
Abstract: A phase change material layer includes antimony (Sb) and at least one of indium (In) and gallium (Ga). A phase change memory device includes a storage node including a phase change material layer and a switching device connected to the storage node. The phase change material layer includes Sb and at least one of In and Ga.
Abstract translation: 相变材料层包括锑（Sb）和铟（In）和镓（Ga）中的至少一种。 相变存储器件包括：存储节点，包括相变材料层和连接到存储节点的开关器件。 相变材料层包括Sb和In和Ga中的至少一种。
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4.发明授权公开(公告)号：US08017929B2
公开(公告)日：2011-09-13
申请号：US12285449
申请日：2008-10-06
Applicant: Youn-seon Kang , Daniel Wamwangi , Matthias Wuttig , Ki-joon Kim , Yoon-ho Khang , Cheol-kyu Kim , Dong-seok Suh , Tae-yon Lee
Inventor： Youn-seon Kang , Daniel Wamwangi , Matthias Wuttig , Ki-joon Kim , Yoon-ho Khang , Cheol-kyu Kim , Dong-seok Suh , Tae-yon Lee
IPC: H01L29/02
CPC classification number: H01L27/2436 , H01L45/06 , H01L45/1233 , H01L45/148 , H01L45/1625
Abstract: A phase change material layer includes antimony (Sb) and at least one of indium (In) and gallium (Ga). A phase change memory device includes a storage node including a phase change material layer and a switching device connected to the storage node. The phase change material layer includes Sb and at least one of In and Ga.
Abstract translation: 相变材料层包括锑（Sb）和铟（In）和镓（Ga）中的至少一种。 相变存储器件包括：存储节点，包括相变材料层和连接到存储节点的开关器件。 相变材料层包括Sb和In和Ga中的至少一种。
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