公开(公告)号：US20100052114A1

公开(公告)日：2010-03-04

申请号：US11815194

申请日：2006-01-17

申请人： Daiji Hara ,  Mayumi Takamori

发明人： Daiji Hara ,  Mayumi Takamori

IPC分类号： H01L29/00 ,  H01L21/31 ,  B01J19/12 ,  C07F7/08

CPC分类号： C07F7/21 ,  C23C16/401 ,  H01L21/02123 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/31604

摘要： The present invention has the objects to provide a novel material for forming Si-containing film, especially a material containing a cyclic siloxane compound suitable to a PECVD equipment for low dielectric constant insulating film, and to provide an Si-containing film using the same, and a semiconductor device containing those films. The present invention relates to a material for forming Si-containing film, containing a cyclic siloxane compound represented by the following general formula (1) (In the formula, A represents a group containing at least one selected from the group consisting of an oxygen atom, a boron atom and a nitrogen atom, n is 1 or 2, and x is an integer of from 2 to 10.), and its use.

摘要翻译： 本发明的目的是提供一种用于形成含Si膜的新型材料，特别是含有适用于低介电常数绝缘膜的PECVD设备的环状硅氧烷化合物的材料，并提供使用该Si的膜的含Si膜， 以及包含这些膜的半导体器件。 本发明涉及含有由以下通式（1）表示的环状硅氧烷化合物的含Si膜的材料（式中，A表示含有选自氧原子中的至少一种的基团） ，硼原子和氮原子，n为1或2，x为2至10的整数）及其用途。

公开(公告)号：US07592471B2

公开(公告)日：2009-09-22

申请号：US11815386

申请日：2006-01-25

申请人： Kenichi Sekimoto ,  Ken-ichi Tada ,  Mayumi Takamori ,  Tetsu Yamakawa ,  Taishi Furukawa ,  Noriaki Oshima

发明人： Kenichi Sekimoto ,  Ken-ichi Tada ,  Mayumi Takamori ,  Tetsu Yamakawa ,  Taishi Furukawa ,  Noriaki Oshima

IPC分类号： C07F17/00 ,  H01L21/4763 ,  C23C16/00

CPC分类号： C23C16/18 ,  C07F17/00

摘要： A novel tantalum compound, a method for producing the novel tantalum compound, and a method for stably forming a tantalum-containing thin film which contains the desired element. The tantalum compound enables one to selectively form a tantalum-containing thin film free of halogen and the like, and various tantalum-containing thin films which contain the desired element.

摘要翻译： 新型钽化合物，新型钽化合物的制造方法以及含有所需元素的含钽薄膜的稳定形成方法。 钽化合物能够选择性地形成不含卤素等的含钽薄膜和含有所需元素的各种含钽薄膜。

公开(公告)号：US07265233B2

公开(公告)日：2007-09-04

申请号：US10568388

申请日：2004-08-11

申请人： Kazuhisa Kawano ,  Mayumi Takamori ,  Noriaki Oshima

发明人： Kazuhisa Kawano ,  Mayumi Takamori ,  Noriaki Oshima

IPC分类号： C07F17/02 ,  C07F15/00 ,  C23C16/00

CPC分类号： C07F17/02 ,  C23C16/18

摘要： An organometallic iridium compound having low melting point, excellent vaporization characteristic and low film formation temperature on a substrate, a process for producing the compound, and a process for preparing iridium-based films using the organometallic compound are provided.The organometallic iridium compound represented by the formula (1) (example of specific compound: (ethylcyclopentadienyl)bis(ethylene)iridium) is obtained by reacting a compound represented by the formula (4) with a compound represented by the formula (2) or (3) An iridium-based film is prepared using the compound as a precursor. In the formulae, R1 represents hydrogen atom or a lower alkyl group; R2 represents a lower alkyl group; X represents a halogen atom; and M represents an alkali metal.

摘要翻译： 提供了一种有机金属铱化合物，其熔点低，汽化特性优异，基材上成膜温度低，化合物的制造方法以及使用有机金属化合物制备铱系膜的方法。 由式（1）表示的有机金属铱化合物（具体化合物：（乙基环戊二烯基）双（乙烯）铱的实例）通过使式（4）表示的化合物与式（2）表示的化合物或式 （3）使用该化合物作为前体制备铱系膜。 在式中，R 1表示氢原子或低级烷基; R 2表示低级烷基; X表示卤原子; M表示碱金属。

公开(公告)号：US20060204660A1

公开(公告)日：2006-09-14

申请号：US10568388

申请日：2004-08-11

申请人： Kazuhisa Kawano ,  Mayumi Takamori ,  Noriaki Oshima

发明人： Kazuhisa Kawano ,  Mayumi Takamori ,  Noriaki Oshima

IPC分类号： C07F17/02 ,  C23C16/00

CPC分类号： C07F17/02 ,  C23C16/18

摘要： An organometallic iridium compound having low melting point, excellent vaporization characteristic and low film formation temperature on a substrate, a process for producing the compound, and a process for preparing iridium-containing films using the organometallic compound are provided. The organometallic iridium compound represented by the formula (1) (example of specific compound: (ethylcyclopentadienyl)bis(ethylene)iridium) is obtained by reacting a compound represented by the formula (4) with a compound represented by the formula (2) or (3) An iridium-containing film is prepared using the compound as a precursor. In the formulae, R1 represents hydrogen atom or a lower alkyl group; R2 represents a lower alkyl group; X represents a halogen atom; and M represents an alkali metal.

摘要翻译： 提供了一种有机金属铱化合物，其熔点低，汽化特性优异，基材上成膜温度低，化合物的制造方法，以及使用有机金属化合物制备含铱膜的方法。 由式（1）表示的有机金属铱化合物（具体化合物：（乙基环戊二烯基）双（乙烯）铱的实例）通过使式（4）表示的化合物与式（2）表示的化合物或式 （3）使用该化合物作为前体制备含铱膜。 在式中，R 1表示氢原子或低级烷基; R 2表示低级烷基; X表示卤原子; M表示碱金属。

公开(公告)号：US08110696B2

公开(公告)日：2012-02-07

申请号：US11815194

申请日：2006-01-17

申请人： Daiji Hara ,  Mayumi Takamori

发明人： Daiji Hara ,  Mayumi Takamori

IPC分类号： C07F7/00

摘要： The present invention has the objects to provide a novel material for forming Si-containing film, especially a material containing a cyclic siloxane compound suitable to a PECVD equipment for low dielectric constant insulating film, and to provide an Si-containing film using the same, and a semiconductor device containing those films. The present invention relates to a material for forming Si-containing film, containing a cyclic siloxane compound represented by the following general formula (1) (In the formula, A represents a group containing at least one selected from the group consisting of an oxygen atom, a boron atom and a nitrogen atom, n is 1 or 2, and x is an integer of from 2 to 10.), and its use.

公开(公告)号：US20090043119A1

公开(公告)日：2009-02-12

申请号：US11815386

申请日：2006-01-25

申请人： Kenichi Sekimoto ,  Ken-ichi Tada ,  Mayumi Takamori ,  Tetsu Yamakawa ,  Taishi Furukawa ,  Noriaki Oshima

发明人： Kenichi Sekimoto ,  Ken-ichi Tada ,  Mayumi Takamori ,  Tetsu Yamakawa ,  Taishi Furukawa ,  Noriaki Oshima

IPC分类号： C07F9/00

CPC分类号： C23C16/18 ,  C07F17/00

摘要： Objects of the present invention are to provide a novel tantalum compound which enables to selectively form a tantalum-containing thin film free of halogen and the like, and various tantalum-containing thin films which contain the desired element, and a method for producing the same, and further provide a method for stably forming a tantalum-containing thin film which contains the desired element.The present invention relates to a tantalum compound represented by the following formula (1) (In the formula, R1 represents a straight-chain alkyl group having from 2 to 6 carbon atoms), or a tantalum compound represented by the general formula (2) (In the formula, R2 represents a straight-chain alkyl group having from 2 to 6 carbon atoms), and a method for producing the same.The present invention further relates to form a tantalum-containing thin film by using a tantalum compound represented by the following general formula (6) (In the formula, j, k, m and n is an integer of from 1 to satisfying j+k=5 and m+n=5, and R3 to R6 represent a hydrogen atom, an alkyl group having from 1 to 6 carbon atoms, and the like) as a raw material.

摘要翻译： 本发明的目的是提供一种新颖的钽化合物，其能够选择性地形成不含卤素等的含钽薄膜，以及含有所需元素的各种含钽薄膜及其制造方法 并且还提供了一种稳定地形成含有所需元素的含钽薄膜的方法。 本发明涉及由下式（1）表示的钽化合物（式中，R1表示碳原子数2〜6的直链烷基）或通式（2）表示的钽化合物， （式中，R 2表示碳原子数2〜6的直链烷基）及其制造方法。 本发明还涉及通过使用由以下通式（6）表示的钽化合物形成含钽薄膜（在式中，j，k，m和n是从1到满足j + k的整数 = 5，m + n = 5，R3〜R6表示氢原子，碳原子数1〜6的烷基等）作为原料。

公开(公告)号：US06884902B2

公开(公告)日：2005-04-26

申请号：US10827448

申请日：2004-04-20

申请人： Mayumi Takamori ,  Noriaki Oshima ,  Kazuhisa Kawano

发明人： Mayumi Takamori ,  Noriaki Oshima ,  Kazuhisa Kawano

IPC分类号： C07C13/15 ,  C07C11/12 ,  C07C13/23 ,  C07F15/00 ,  C07F17/00 ,  C23C16/18 ,  C23C16/40 ,  H01L21/02 ,  H01L21/28 ,  H01L21/285 ,  C07F17/02 ,  B05D3/06 ,  C23C16/00

CPC分类号： H01L28/65 ,  C07F17/00 ,  C23C16/18 ,  C23C16/40

摘要： An organometallic compound having a low melting point, excellent vaporization characteristic and low film formation temperature on a substrate, for forming an iridium-containing thin film by the CVD process is provided. The organometallic iridium compound is represented by the following general formula (1) or (2): wherein R1 represents hydrogen or a lower alkyl group; R2 to R7 each represents hydrogen, a halogen, or the like, provided that specific combinations of R1 to R7 are excluded; R8 represents a lower alkyl group; R9 to R12 each represents hydrogen, a halogen, or the like, provided that specific combinations of R8 to R12 are excluded. Iridium-containing thin films are produced by using the compound as a precursor by CVD process.

摘要翻译： 提供了一种通过CVD工艺形成含铱薄膜的基板上具有低熔点，优异的蒸发特性和低成膜温度的有机金属化合物。 有机金属铱化合物由以下通式（1）或（2）表示：其中R 1表示氢或低级烷基; R 2至R 7各自表示氢，卤素等，条件是R 1至R 7的特定组合 被排除在外; R 8表示低级烷基; R 9至R 12各自表示氢，卤素等，条件是R 8与R 12的特定组合 被排除。 含铱的薄膜是通过化学气相沉积法使用该化合物作为前体来制备的。

公开(公告)号：US08513448B2

公开(公告)日：2013-08-20

申请号：US11815194

申请日：2006-01-17

申请人： Daiji Hara ,  Mayumi Takamori

发明人： Daiji Hara ,  Mayumi Takamori

IPC分类号： C07F7/00

CPC分类号： C07F7/21 ,  C23C16/401 ,  H01L21/02123 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/31604

摘要： The present invention has the objects to provide a novel material for forming Si-containing film, especially a material containing a cyclic siloxane compound suitable to a PECVD equipment for low dielectric constant insulating film, and to provide an Si-containing film using the same, and a semiconductor device containing those films. The present invention relates to a material for forming Si-containing film, containing a cyclic siloxane compound represented by the following general formula (1) (In the formula, A represents a group containing at least one selected from the group consisting of an oxygen atom, a boron atom and a nitrogen atom, n is 1 or 2, and x is an integer of from 2 to 10.), and its use.

摘要翻译： 本发明的目的是提供一种用于形成含Si膜的新型材料，特别是含有适用于低介电常数绝缘膜的PECVD设备的环状硅氧烷化合物的材料，并提供使用该Si的膜的含Si膜， 以及包含这些膜的半导体器件。 本发明涉及含有由以下通式（1）表示的环状硅氧烷化合物的含Si膜的材料（式中，A表示含有选自氧原子中的至少一种的基团） ，硼原子和氮原子，n为1或2，x为2至10的整数）及其用途。