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    Etching chamber having flow equalizer and lower liner
    1.
    发明授权
    Etching chamber having flow equalizer and lower liner 有权
    蚀刻室具有流量均衡器和下层衬套

    公开(公告)号：US08313578B2

    公开(公告)日：2012-11-20

    申请号：US12624155

    申请日：2009-11-23

    申请人： James D. Carducci ,  Kin Pong Lo ,  Kallol Bera ,  Michael C. Kutney ,  Matthew L. Miller

    发明人： James D. Carducci ,  Kin Pong Lo ,  Kallol Bera ,  Michael C. Kutney ,  Matthew L. Miller

    IPC分类号： C23C16/52 ,  C23C16/455

    CPC分类号： H01J37/32623 ,  H01J37/32467

    摘要： A plasma processing chamber having a lowered flow equalizer and a lower chamber liner. In an etching process, the processing gases may be unevenly drawn from the processing chamber which may cause an uneven etching of the substrate. By equalizing the flow of the processing gases evacuated from the chamber, a more uniform etching may occur. By electrically coupling the flow equalizer to the chamber liners, the RF return path from the flow equalizer may run along the chamber liners and hence, reduce the amount of plasma drawn below the substrate during processing.

    摘要翻译： 具有降低的流量均衡器和下腔室衬套的等离子体处理室。 在蚀刻工艺中，处理气体可能不均匀地从处理室抽出，这可能导致基板的不均匀蚀刻。 通过均衡从室抽出的处理气体的流动，可能发生更均匀的蚀刻。 通过将流量均衡器电耦合到室衬套，来自流量均衡器的RF返回路径可以沿着室衬套运行，并且因此减少在处理期间在衬底下方拉制的等离子体的量。

    SPRAY DEPOSITION MODULE FOR AN IN-LINE PROCESSING SYSTEM
    2.
    发明申请
    SPRAY DEPOSITION MODULE FOR AN IN-LINE PROCESSING SYSTEM 审中-公开
    用于在线处理系统的喷雾沉积模块

    公开(公告)号：US20120064225A1

    公开(公告)日：2012-03-15

    申请号：US12880564

    申请日：2010-09-13

    申请人： Robert Z. Bachrach ,  Connie P. Wang ,  Sergey D. Lopatin ,  Hooman Bolandi ,  Ruben Babayants ,  Karl M. Brown ,  Michael C. Kutney

    发明人： Robert Z. Bachrach ,  Connie P. Wang ,  Sergey D. Lopatin ,  Hooman Bolandi ,  Ruben Babayants ,  Karl M. Brown ,  Michael C. Kutney

    IPC分类号： H01M10/04 ,  B05B5/025 ,  B05C9/14 ,  B05C5/00

    CPC分类号： H01M4/0419 ,  H01M10/0404

    摘要： In one embodiment, an apparatus for simultaneously depositing an anodically or cathodically active material on opposing sides of a flexible conductive substrate is provided. The apparatus comprises a chamber body defining one or more processing regions in which a flexible conductive substrate is exposed to a dual sided spray deposition process, wherein each of the one or more processing regions are further divided into a first spray deposition region and a second spray deposition region for simultaneously spraying an anodically active or cathodically active material onto opposing sides of a portion of the flexible conductive substrate, wherein each of the first and second spray deposition regions comprise a spray dispenser cartridge for delivering the activated material toward the flexible conductive substrate and a movable collection shutter.

    摘要翻译： 在一个实施例中，提供了用于在柔性导电基板的相对侧上同时沉积阳极或阴极活性材料的装置。 该装置包括限定一个或多个处理区域的室主体，其中柔性导电基板暴露于双面喷射沉积工艺，其中一个或多个处理区域中的每一个进一步分为第一喷涂区域和第二喷涂 沉积区域，用于同时将阳极活性或阴极活性材料喷射到柔性导电基底的一部分的相对侧上，其中第一和第二喷射沉积区域中的每一个包括喷射分配器筒，用于将活化材料递送到柔性导电基底， 一个可移动的集合挡板。

    ETCHING CHAMBER HAVING FLOW EQUALIZER AND LOWER LINER
    3.
    发明申请
    ETCHING CHAMBER HAVING FLOW EQUALIZER AND LOWER LINER 有权
    具有流量均衡器和下层的蚀刻室

    公开(公告)号：US20100065213A1

    公开(公告)日：2010-03-18

    申请号：US12624155

    申请日：2009-11-23

    申请人： James D. Carducci ,  Kin Pong Lo ,  Kallol Bera ,  Michael C. Kutney ,  Matthew L. Miller

    发明人： James D. Carducci ,  Kin Pong Lo ,  Kallol Bera ,  Michael C. Kutney ,  Matthew L. Miller

    IPC分类号： H01L21/306

    CPC分类号： H01J37/32623 ,  H01J37/32467

    摘要： A plasma processing chamber having a lowered flow equalizer and a lower chamber liner. In an etching process, the processing gases may be unevenly drawn from the processing chamber which may cause an uneven etching of the substrate. By equalizing the flow of the processing gases evacuated from the chamber, a more uniform etching may occur. By electrically coupling the flow equalizer to the chamber liners, the RF return path from the flow equalizer may run along the chamber liners and hence, reduce the amount of plasma drawn below the substrate during processing.

    摘要翻译： 具有降低的流量均衡器和下腔室衬套的等离子体处理室。 在蚀刻工艺中，处理气体可能不均匀地从处理室抽出，这可能导致基板的不均匀蚀刻。 通过均衡从室抽出的处理气体的流动，可能发生更均匀的蚀刻。 通过将流量均衡器电耦合到室衬套，来自流量均衡器的RF返回路径可以沿着室衬套运行，并且因此减少在处理期间在衬底下方拉制的等离子体的量。