公开(公告)号：US20100025787A1

公开(公告)日：2010-02-04

申请号：US11541975

申请日：2006-10-02

申请人： Michael W. Geis ,  Steven J. Spector ,  Donna M. Lennon ,  Matthew E. Grein ,  Robert T. Schulein ,  Jung U. Yoon ,  Franz Xaver Kaertner ,  Fuwan Gan ,  Theodore M. Lyszczarz

发明人： Michael W. Geis ,  Steven J. Spector ,  Donna M. Lennon ,  Matthew E. Grein ,  Robert T. Schulein ,  Jung U. Yoon ,  Franz Xaver Kaertner ,  Fuwan Gan ,  Theodore M. Lyszczarz

IPC分类号： H01L31/0352 ,  H01L21/30 ,  H01L31/0232

CPC分类号： H01L27/144 ,  H01L31/102

摘要： A Silicon photodetector contains an insulating substrate having a top surface and a bottom surface. A Silicon layer is located on the top surface of the insulating substrate, where the Silicon layer contains a center region, the center region being larger in thickness than the rest of the Silicon layer. A top Silicon dioxide layer is located on a top surface of the center region. A left wing of the center region and a right wing of the center region are doped. The Silicon photodetector also has an active region located within the center region, where the active region contains a tailored crystal defect-impurity combination and Oxygen atoms.

摘要翻译： 硅光电检测器包含具有顶表面和底表面的绝缘基底。 硅层位于绝缘基板的顶表面上，其中硅层包含中心区域，中心区域的厚度大于硅层的其余部分。 顶部二氧化硅层位于中心区域的顶表面上。 中心区域的左翼和中心区域的右翼被掺杂。 硅光电探测器还具有位于中心区域内的有源区域，其中有源区域包含定制的晶体缺陷 - 杂质组合和氧原子。

公开(公告)号：US5582701A

公开(公告)日：1996-12-10

申请号：US360260

申请日：1994-12-20

申请人： Michael W. Geis ,  Stephanie A. Gajar ,  Nancy Geis

发明人： Michael W. Geis ,  Stephanie A. Gajar ,  Nancy Geis

IPC分类号： B03C5/02 ,  G01N27/447 ,  B01D57/02 ,  G01N27/26

CPC分类号： G01N27/44752 ,  B03C5/026 ,  B03C5/028 ,  Y10S257/912

摘要： An ionic liquid-channel charge-coupled device that separates ions in a liquid sample according to ion mobility characteristics includes a channel having an inner wall that has a matrix liquid disposed within. An insulating material surrounds the channel, and an introduction element introduces a liquid sample into the channel. The sample is preferably a liquid solution that has at least one ionic specie present in the solution. The device further includes a gating element that establishes at least one charge packet in the channel in response to an externally applied input signal, and a transport element that induces the charge packet to migrate through the channel. The gate element can be a plurality of spaced-apart, electrically conductive, gate structures that are alternately disposable between a high voltage state and a low voltage state. The transport element further includes an application element that applies a variable voltage to the gating element. This application of voltage induces the charge packets to form under the gate structures and, when the voltage applied to an adjacent gate has a higher potential, induces the packet to migrate through the channel in that direction.

公开(公告)号：US06833027B2

公开(公告)日：2004-12-21

申请号：US10254809

申请日：2002-09-26

申请人： James E. Butler ,  Michael W. Geis ,  Donald D. Flechtner ,  Robert L. Wright

发明人： James E. Butler ,  Michael W. Geis ,  Donald D. Flechtner ,  Robert L. Wright

IPC分类号： C30B2904

CPC分类号： H01L21/0435 ,  C30B25/02 ,  C30B29/04 ,  H01L21/041 ,  H01L29/6603

摘要： A method of making a Schottky diode comprising the steps of: providing a single crystal diamond comprising a surface; placing the single crystal diamond in a CVD system; heating the diamond to a temperature of at least about 950° C.; providing a gas mixture capable of growing diamond film and comprising a sulfur compound through the CVD system; growing an epitaxial diamond film on the surface of the single crystal diamond; baking the diamond at a temperature of at least about 650° C. in air for a period of time that minimizes oxidation of the diamond; and fabricating a Schottky diode comprising the diamond film. A Schottky diode comprising an epitaxial diamond film and capable of blocking at least about 6 kV in a distance of no more than about 300 &mgr;m.

摘要翻译： 一种制造肖特基二极管的方法，包括以下步骤：提供包含表面的单晶金刚石; 将单晶金刚石置于CVD系统中; 将金刚石加热至至少约950℃的温度; 提供能够生长金刚石膜并通过CVD系统包含硫化合物的气体混合物; 在单晶金刚石的表面生长外延金刚石膜; 在至少约650℃的温度下在空气中烘烤金刚石使其最小化金刚石氧化的时间; 以及制造包含金刚石膜的肖特基二极管。 肖特基二极管包括外延金刚石膜，并且能够在不超过约300μm的距离内阻挡至少约6kV。

公开(公告)号：US5973451A

公开(公告)日：1999-10-26

申请号：US794361

申请日：1997-02-04

申请人： Michael W. Geis ,  Nickolai N. Efremow ,  Kevin E. Krohn ,  Jonathan C. Twichell ,  Theodore M. Lyszczarz

发明人： Michael W. Geis ,  Nickolai N. Efremow ,  Kevin E. Krohn ,  Jonathan C. Twichell ,  Theodore M. Lyszczarz

IPC分类号： H01J1/30

CPC分类号： H01J1/30

摘要： The surface-emission cathodes of the invention are constructed so that the cathode body has a free surface over which electrons are efficiently accelerated after injection from a conductive contact. The junction between the free surface and the contact has the property that the height of the barrier to tunneling from the contact to floating surface states associated with the free surface of the cathode body is lower than both the barrier to emission from the contact to vacuum and the barrier to injection from the contact into the conduction band of the cathode body material. Thus under an applied potential, electrons are injected from the contact into floating surface states associated with the free surface. After acceleration, electrons leave the free surface, either emitted to vacuum or injected into another medium.

摘要翻译： 本发明的表面发射阴极被构造成使得阴极体具有自由表面，电子在从导电接触点注入之后被有效地加速。 自由表面和接触之间的接合点具有这样的特性，即从接触到与阴极体的自由表面相关联的浮动表面状态的穿透的屏障的高度低于从接触到真空的发射屏障， 从触点注入阴极体材料的导带的阻挡层。 因此，在施加电位下，电子从触点注入与自由表面相关的浮动表面状态。 加速后，电子离开自由表面，发射到真空或注入另一种介质。

公开(公告)号：US5666025A

公开(公告)日：1997-09-09

申请号：US543981

申请日：1995-10-17

申请人： Michael W. Geis ,  John M. Macaulay ,  Jonathan C. Twichell

发明人： Michael W. Geis ,  John M. Macaulay ,  Jonathan C. Twichell

IPC分类号： H01J1/14 ,  H01J1/304 ,  H01J1/30 ,  H01J19/24

CPC分类号： H01J1/14 ,  H01J1/304 ,  H01J2201/30426 ,  H01J2329/00

摘要： A flat-panel display contains an emissive cathode structure and a generally flat encapsulating body that surrounds the cathode structure to form a sealed enclosure. The cathode structure contains electronegative atoms (22), which consist of oxygen and/or fluorine, chemically bonded to a carbon-containing cathode (10). Atoms (24R) of electropositive metal are chemically bonded to the electronegative atoms.

摘要翻译： 平板显示器包含发射阴极结构和围绕阴极结构以形成密封外壳的大致平坦的封装体。 阴极结构含有化学结合到含碳阴极（10）上的由氧和/或氟组成的电负性原子（22）。 正电性金属的原子（24R）与电负性原子化学键合。

公开(公告)号：US5479035A

公开(公告)日：1995-12-26

申请号：US353450

申请日：1994-12-09

申请人： Michael W. Geis ,  Stephanie A. Gajar ,  Nancy Geis

发明人： Michael W. Geis ,  Stephanie A. Gajar ,  Nancy Geis

IPC分类号： B03C5/02 ,  G01N27/447 ,  H01L27/148 ,  H01L29/768

CPC分类号： G01N27/44752 ,  B03C5/026 ,  B03C5/028 ,  Y10S257/912

摘要： An ionic liquid-channel charge-coupled device that separates ions in a liquid sample according to ion mobility characteristics includes a channel having an inner wall that has a matrix liquid disposed within. An insulating material surrounds the channel, and an introduction element introduces a liquid sample into the channel. The sample is preferably a liquid solution that has at least one ionic specie present in the solution. The device further includes a gating element that establishes at least one charge packet in the channel in response to an externally applied input signal, and a transport element that induces the charge packet to migrate through the channel. The gate element can be a plurality of spaced-apart, electrically conductive, gate structures that are alternately disposable between a high voltage state and a low voltage state. The transport element further includes an application element that applies a variable voltage to the gating element. This application of voltage induces the charge packets to form under the gate structures and, when the voltage applied to an adjacent gate has a higher potential, induces the packet to migrate through the channel in that direction.

摘要翻译： 根据离子迁移率特性分离液体样品中的离子的离子液体通道电荷耦合器件包括具有设置在其内的基质液体的内壁的通道。 绝缘材料围绕通道，引入元件将液体样品引入通道。 样品优选是溶液中存在至少一种离子物质的液体溶液。 该装置还包括门控元件，其响应于外部施加的输入信号在信道中建立至少一个充电分组，以及传输元件，其使得该充电分组迁移通过该信道。 栅极元件可以是多个间隔开的导电的栅极结构，其在高电压状态和低电压状态之间交替地是一次性的。 运输元件还包括向选通元件施加可变电压的应用元件。 这种电压的应用引起电荷分组形成在栅极结构之下，并且当施加到相邻栅极的电压具有较高电位时，引起分组沿着该方向迁移通过通道。

公开(公告)号：US5463271A

公开(公告)日：1995-10-31

申请号：US90228

申请日：1993-07-09

申请人： Michael W. Geis ,  John M. Macaulay ,  Jonathan C. Twichell

发明人： Michael W. Geis ,  John M. Macaulay ,  Jonathan C. Twichell

IPC分类号： H01J1/14 ,  H01J1/304 ,  H01J1/30 ,  H01J19/24

CPC分类号： H01J1/14 ,  H01J1/304 ,  H01J2201/30426 ,  H01J2329/00

摘要： A cathode structure contains electronegative atoms (22), which consist of oxygen and/or fluorine, chemically bonded to a carbon-containing cathode (10). Atoms (24R) of electropositive metal are chemically bonded to the electronegative atoms. The combination of the electropositive metal atoms and the electronegative atoms enhances the electron emissivity by reducing the work function.

摘要翻译： 阴极结构含有化学键合到含碳阴极（10）的由氧和/或氟组成的电负性原子（22）。 正电性金属的原子（24R）与电负性原子化学键合。 正电性金属原子和电负性原子的组合通过降低功函数来增强电子发射率。

公开(公告)号：US4576676A

公开(公告)日：1986-03-18

申请号：US497620

申请日：1983-05-24

申请人： Henry I. Smith ,  Harry A. Atwater ,  Michael W. Geis

发明人： Henry I. Smith ,  Harry A. Atwater ,  Michael W. Geis

IPC分类号： C30B13/00 ,  C30B13/34 ,  C30B1/08

CPC分类号： C30B13/34 ,  C30B13/00 ,  C30B29/64 ,  Y10S438/973

摘要： To achieve a uniform texture, large crystalline grains or, in some cases, a single crystalline orientation in a thick (>1 .mu.m) film on a foreign substrate, the film is formed so as to be thin (

摘要翻译： 为了在异质基底上的厚（>1μm）膜中获得均匀的纹理，大的晶粒或在一些情况下为单晶取向，形成薄（<1μm） 某一部分。 区域熔融重结晶在薄部分开始，然后延伸到厚部分。 该方法可以采用取向滤波器图案的平面收缩图案。

公开(公告)号：US4565599A

公开(公告)日：1986-01-21

申请号：US680237

申请日：1984-12-10

申请人： Michael W. Geis ,  Henry I. Smith ,  Dimitri A. Antoniadis ,  Dale C. Flanders

发明人： Michael W. Geis ,  Henry I. Smith ,  Dimitri A. Antoniadis ,  Dale C. Flanders

IPC分类号： C30B1/02 ,  C30B13/00 ,  C30B13/34 ,  H01L21/20 ,  C30B1/08

CPC分类号： H01L21/2022 ,  C30B1/02 ,  C30B13/00 ,  C30B13/34 ,  C30B29/64 ,  Y10S117/913 ,  Y10S148/152

摘要： Improvements on the graphoepitaxial process for obtaining epitaxial or preferred orientation films are described wherein a cap of material is formed over the film to be oriented, artificial surface-relief structure may be present in the substrate, the cap, or both, and the film may be heated by irradiation with electromagnetic radiation.

摘要翻译： 描述了用于获得外延或优选取向膜的图案外延工艺的改进，其中在要取向的膜上形成材料盖，人造表面浮雕结构可存在于基板，盖或两者中，并且膜可以 用电磁辐射照射加热。

公开(公告)号：US4562106A

公开(公告)日：1985-12-31

申请号：US617311

申请日：1984-06-04

申请人： Michael W. Geis ,  Henry I. Smith

发明人： Michael W. Geis ,  Henry I. Smith

IPC分类号： C30B13/00 ,  C30B13/28 ,  C30B27/00 ,  B32B33/00

CPC分类号： C30B27/00 ,  C30B13/00 ,  C30B13/28 ,  C30B29/60 ,  Y10S148/06 ,  Y10T428/24802

摘要： A substrate, such as a film of thermally grown silicon dioxide on a silicon wafer is coated with a thin film of polycrystalline or amorphous silicon in the thickness range 0.05-10.mu. deposited by chemical vapor deposition. An encapsulation layer that is a composite of 2 .mu.m thickness SiO.sub.2, 30 nm of Si.sub.3 N.sub.4 is deposited on the thin film. A pattern of stripes is created on this encapsulation layer made of materials, such as titanium, silicon, silicon dioxide and photoresist. A long and narrow molten zone is created in the film with its long axis oriented perpendicular to the lines and is moved with a movable strip-heater over in a direction parallel to the lines in the recrystallization process to establish dislocation and crystalline defects in the film entrained to follow the pattern of the stripes at locations related to the stripes.

摘要翻译： 诸如硅晶片上的热生长二氧化硅的薄膜的衬底涂覆有通过化学气相沉积沉积的厚度范围为0.05-10μm的多晶或非晶硅薄膜。 作为2μm厚的SiO 2，30nm的Si 3 N 4的复合体的封装层沉积在薄膜上。 在由诸如钛，硅，二氧化硅和光致抗蚀剂的材料制成的该封装层上形成条纹图案。 在膜中产生长而窄的熔融区，其长轴垂直于线，并且在可再循环过程中与可行的带状加热器在平行于线的方向上移动，以在膜中形成位错和晶体缺陷 夹带在与条纹相关的位置跟随条纹图案。