公开(公告)号：US20060157692A1

公开(公告)日：2006-07-20

申请号：US11370924

申请日：2006-03-09

申请人： Takatsugu Wada ,  Hiroyuki Tokunaga ,  Osamu Kanome ,  Mika Hanada ,  Takehito Nishida

发明人： Takatsugu Wada ,  Hiroyuki Tokunaga ,  Osamu Kanome ,  Mika Hanada ,  Takehito Nishida

IPC分类号： H01L29/08 ,  H01L21/84

CPC分类号： H01L51/0545 ,  H01L51/0022 ,  H01L51/0541

摘要： There is provided an organic transistor having a bottom gate structure, composed of a substrate, a gate electrode, a gate insulating layer, source and drain electrodes and an organic semiconductor layer, wherein the gate insulating layer is formed so as to have a low surface energy in a portion thereof in proximity to the source and drain electrodes and a relatively high surface energy in a portion in proximity to the gate electrode, and consist of different compositions in a layer thickness direction, whereby an organic transistor has a short channel and high electric characteristics; as well as a method of manufacturing the organic semiconductor.

摘要翻译： 提供一种具有底栅结构的有机晶体管，其由基板，栅电极，栅极绝缘层，源极和漏极以及有机半导体层组成，其中栅极绝缘层形成为具有低表面 在源极和漏极附近的部分中的能量和在栅电极附近的部分中的相对高的表面能，并且由层厚度方向上的不同组成组成，由此有机晶体管具有短沟道和高 电气特性; 以及制造有机半导体的方法。