公开(公告)号：US08680588B2

公开(公告)日：2014-03-25

申请号：US12072440

申请日：2008-02-26

申请人： Ming Li ,  Dong-Uk Choi ,  Chang-Woo Oh ,  Dong-Won Kim ,  Min-Sang Kim ,  Sung-Hwan Kim ,  Kyoung-Hwan Yeo

发明人： Ming Li ,  Dong-Uk Choi ,  Chang-Woo Oh ,  Dong-Won Kim ,  Min-Sang Kim ,  Sung-Hwan Kim ,  Kyoung-Hwan Yeo

IPC分类号： H01L29/66

CPC分类号： H01L29/7883 ,  H01L27/108 ,  H01L27/10802 ,  H01L29/42336 ,  H01L29/42392 ,  H01L29/66825 ,  H01L29/7841

摘要： A field effect transistor includes a buried gate pattern that is electrically isolated by being surrounded by a tunneling insulating film. The field effect transistor also includes a channel region that is floated by source and drain regions, a gate insulating film, and the tunneling insulating film. The buried gate pattern and the tunneling insulating film extend into the source and drain regions. Thus, the field effect transistor efficiently stores charge carriers in the buried gate pattern and the floating channel region.

摘要翻译： 场效应晶体管包括通过被隧道绝缘膜包围而电隔离的掩埋栅极图案。 场效应晶体管还包括由源极和漏极区域浮置的沟道区，栅极绝缘膜和隧道绝缘膜。 掩埋栅极图案和隧道绝缘膜延伸到源极和漏极区域。 因此，场效应晶体管有效地将电荷载流子存储在掩埋栅极图案和浮动沟道区域中。

公开(公告)号：US08511885B2

公开(公告)日：2013-08-20

申请号：US13184054

申请日：2011-07-15

申请人： Moon Jeong Kim ,  Kum Tae Lee ,  Min Sang Kim

发明人： Moon Jeong Kim ,  Kum Tae Lee ,  Min Sang Kim

IPC分类号： F21V7/04

CPC分类号： G02B6/0091 ,  G02B6/0031 ,  G02B6/0055 ,  G02B6/0068 ,  G02B6/008 ,  G02F1/1336 ,  G02F1/133608 ,  G02F1/133615

摘要： Disclosed herein are a light emitting device assembly, a backlight unit and a display device having the same. The light emitting device assembly includes a light emitting device module having a light emitting device disposed on a board, a light guide plate to emit light incident from the light emitting device module in a direction differing from a light incidence direction, and a first fixing cover and a second fixing cover to connect the light emitting device module and the light guide plate. The first fixing cover and the second fixing cover are coupled by fixing members, protrusions are disposed on the second fixing cover at first regions corresponding to the fixing members, and the edge of the second fixing cover at second regions is bent.

摘要翻译： 这里公开了发光器件组件，背光单元和具有该发光器件组件的显示器件。 发光器件组件包括发光器件模块，其具有布置在板上的发光器件，导光板以不同于光入射方向的方式发射从发光器件模块入射的光;以及第一固定盖 以及用于连接发光器件模块和导光板的第二固定盖。 第一固定盖和第二固定盖通过固定构件联接，突起在与固定构件对应的第一区域设置在第二固定盖上，第二区域的第二固定盖的边缘弯曲。

公开(公告)号：US20120140443A1

公开(公告)日：2012-06-07

申请号：US13368673

申请日：2012-02-08

申请人： Min Sang Kim ,  Jung In Seo

发明人： Min Sang Kim ,  Jung In Seo

IPC分类号： G09F13/04

CPC分类号： G02B6/0021 ,  G02B6/0038 ,  G02B6/0055 ,  G02B6/0068 ,  G02B6/0073

摘要： The backlight unit includes a plurality of light source groups, each of which includes at least one light source, and a light guide plate to guide light irradiated from the plurality of light source groups, and the light guide plate includes first grooves disposed in a first direction, the plurality of light source groups being disposed within the first grooves, and at least one second groove disposed in a second direction differing from the first direction.

摘要翻译： 背光单元包括多个光源组，每个光源组包括至少一个光源，以及导光板，用于引导从多个光源组照射的光，并且导光板包括设置在第一 所述多个光源组设置在所述第一凹槽内，以及至少一个第二凹槽，所述第二凹槽沿与第一方向不同的第二方向设置。

公开(公告)号：US20110286202A1

公开(公告)日：2011-11-24

申请号：US13109102

申请日：2011-05-17

申请人： Min Sang KIM ,  Ji Won JANG

发明人： Min Sang KIM ,  Ji Won JANG

IPC分类号： G09F13/04

CPC分类号： G02B6/0055 ,  G02B6/0061 ,  G02B6/0073 ,  G02F1/133605 ,  G02F1/133615

摘要： A backlight unit and a display apparatus using the same are disclosed. The backlight unit includes an optical member, a reflector spaced apart from the optical member and having an inclined surface, a fixture connected to one side of the reflector so as to fix the reflector, and a light source disposed to one side of the reflector.

摘要翻译： 公开了一种背光单元和使用其的显示装置。 背光单元包括光学构件，与光学构件间隔开并具有倾斜表面的反射器，连接到反射器的一侧以固定反射器的固定件，以及设置在反射器一侧的光源。

公开(公告)号：US08033676B2

公开(公告)日：2011-10-11

申请号：US12985213

申请日：2011-01-05

申请人： Kum Tae Lee ,  Min Sang Kim ,  Moon Jeong Kim ,  Sung Young Park ,  Jeong Hwan Kim

发明人： Kum Tae Lee ,  Min Sang Kim ,  Moon Jeong Kim ,  Sung Young Park ,  Jeong Hwan Kim

IPC分类号： G09F13/04 ,  G02F1/1335

CPC分类号： G02B6/0083 ,  G02B6/0068 ,  G02B6/008 ,  G02B6/0091

摘要： The backlight unit may include a plurality of optical assemblies, which each include a light emitting module having a substrate, a plurality of light emitting devices on a top surface of the substrate, and a connector provided on a bottom surface of the substrate and electrically connected to a power supply unit. The optical assembly may also include a light guide plate including a first part through which the light is received and a second part to output the light, which is laterally received from the first part, through a top surface thereof. A first side cover may be provided over the light emitting module and the first part of the light guide plate. A second side cover may be formed under the light emitting module and the light guide plate, the second side cover having a plurality of connector holes. The connector may be provided in one of the connector holes.

摘要翻译： 背光单元可以包括多个光学组件，每个光学组件包括具有衬底的发光模块，在衬底的顶表面上的多个发光器件，以及设置在衬底的底表面上的电连接 到电源单元。 光学组件还可以包括导光板，该导光板包括容纳光的第一部分和通过其顶表面输出从第一部分侧向接收的光的第二部分。 可以在发光模块和导光板的第一部分之上设置第一侧盖。 第二侧盖可以形成在发光模块下面和导光板之下，第二侧盖具有多个连接孔。 连接器可以设置在连接器孔中的一个中。

公开(公告)号：US20110241980A1

公开(公告)日：2011-10-06

申请号：US13087421

申请日：2011-04-15

申请人： Kum Tae LEE ,  Min Sang KIM ,  Moon Jeong KIM ,  Sung Yong PARK

发明人： Kum Tae LEE ,  Min Sang KIM ,  Moon Jeong KIM ,  Sung Yong PARK

IPC分类号： G09G3/36

CPC分类号： G09G3/3406 ,  G02B6/0031 ,  G02B6/0055 ,  G02B6/008 ,  G02B6/0083 ,  G02B6/0088 ,  G02B6/0091 ,  G02F2001/133601 ,  G09G2310/0232 ,  G09G2320/0233 ,  G09G2320/0626

摘要： The embodiments provide a backlight unit including a bottom cover, a plurality of light emitting device assembly each having a light emitting device module including at least one light emitting device, the light emitting device assembly arranged on the bottom cover adjacent to one another, a power supply unit for supplying power to the light emitting device module in each of the light emitting device assembly, and a control unit for controlling the power supply unit such that, of the light emitting device modules of the light emitting device assembly, intensity of current supplied to a light emission device positioned at an edge region of each of the light emitting device assembly is different from the intensity of current supplied to the light emission device positioned at a middle region of each of the light emitting device assembly.

摘要翻译： 实施例提供了一种背光单元，其包括底盖，多个发光器件组件，每个发光器件组件均具有包括至少一个发光器件的发光器件模块，布置在彼此相邻的底盖上的发光器件组件， 供电单元，用于向每个发光器件组件中的发光器件模块供电;以及控制单元，用于控制电源单元，使得在发光器件组件的发光器件模块中，提供的电流强度 到位于每个发光器件组件的边缘区域处的发光器件不同于提供给位于每个发光器件组件的中间区域的发光器件的电流的强度。

公开(公告)号：US20110182111A1

公开(公告)日：2011-07-28

申请号：US13082605

申请日：2011-04-08

申请人： Min-Sang Kim ,  Ji-Myoung Lee ,  Hyun-Jun Bae ,  Dong-Won Kim ,  Jun Seo ,  Weonwi Jang ,  Keun-Hwi Cho

发明人： Min-Sang Kim ,  Ji-Myoung Lee ,  Hyun-Jun Bae ,  Dong-Won Kim ,  Jun Seo ,  Weonwi Jang ,  Keun-Hwi Cho

IPC分类号： G11C11/24 ,  G11C11/50

CPC分类号： H01L28/40 ,  H01L27/10894

摘要： A memory device includes a storage node, a first electrode, and a second electrode formed in a memory cell, the storage node stores electrical charges, the first electrode comprising a first portion electrically connected to a second portion, the first portion moves to connect to the storage node when the second electrode is energized.

摘要翻译： 存储装置包括存储节点，第一电极和形成在存储单元中的第二电极，所述存储节点存储电荷，所述第一电极包括电连接到第二部分的第一部分，所述第一部分移动以连接到 当第二电极通电时的存储节点。

公开(公告)号：US07972914B2

公开(公告)日：2011-07-05

申请号：US12477348

申请日：2009-06-03

申请人： Sung-min Kim ,  Min-sang Kim ,  Eun-jung Yun

发明人： Sung-min Kim ,  Min-sang Kim ,  Eun-jung Yun

IPC分类号： H01L21/338 ,  H01L21/336 ,  H01L21/3205

CPC分类号： H01L29/785 ,  H01L29/42384 ,  H01L29/66795

摘要： A FinFET semiconductor device has an active region formed of a semiconductor substrate and projecting from a surface of the substrate. A fin having a first projection and a second projection composed of the active region are arranged in parallel and at each side of a central trench formed in a central portion of the active region. Upper surfaces and side surfaces of the first projection and the second projection comprise a channel region. A channel ion implantation layer is provided at a bottom of the central trench and at a lower portion of the fin. A gate oxide layer is provided on the fin. A gate electrode is provided on the gate oxide layer. A source region and a drain region are provided in the active region at sides of the gate electrode. A method of forming such a device is also provided.

摘要翻译： FinFET半导体器件具有由半导体衬底形成并从衬底的表面突出的有源区。 具有第一突起和由有源区组成的第二突起的翅片平行布置在形成在有源区的中心部分的中心沟槽的每一侧。 第一突起和第二突起的上表面和侧表面包括通道区域。 通道离子注入层设置在中央沟槽的底部和鳍片的下部。 在鳍片上设置栅极氧化层。 栅电极设置在栅氧化层上。 源极区域和漏极区域设置在栅电极侧的有源区域中。 还提供了一种形成这种装置的方法。

公开(公告)号：US07868401B2

公开(公告)日：2011-01-11

申请号：US12289851

申请日：2008-11-06

申请人： Ji-Myoung Lee ,  Min-Sang Kim ,  Sung-Min Kim ,  Keun-Hwi Cho

发明人： Ji-Myoung Lee ,  Min-Sang Kim ,  Sung-Min Kim ,  Keun-Hwi Cho

IPC分类号： H01L29/84 ,  H01L29/76 ,  H01L21/00 ,  G11C11/417

CPC分类号： G11C11/56 ,  B82Y10/00 ,  G11C13/025 ,  G11C23/00

摘要： Provided are a multibit electro-mechanical memory device and a method of manufacturing the same. The device may include at least one bit line in a first direction on a substrate; at least one gate line and at least one lower word line in parallel by a given interval and in a second direction intersecting the first direction on the at least one bit line; at least one contact pad adjacent to the at least one gate line on the at least one bit line; and at least one cantilever electrode coupled to the at least one contact pad, configured to float with a void above and beneath the at least one cantilever electrode and configured to curve in a third direction vertical to the first and second directions.

摘要翻译： 提供了一种多位机电存储器件及其制造方法。 器件可以在衬底上包括沿第一方向的至少一个位线; 至少一个栅极线和至少一个下部字线平行延伸给定的间隔，并且在与所述至少一个位线上的所述第一方向相交的第二方向上; 至少一个与所述至少一条位线上的所述至少一条栅极线相邻的接触焊盘; 以及耦合到所述至少一个接触垫的至少一个悬臂电极，其构造成在所述至少一个悬臂电极的上方和下方浮动，并且被配置为在垂直于所述第一和第二方向的第三方向上弯曲。

公开(公告)号：US07791936B2

公开(公告)日：2010-09-07

申请号：US12074645

申请日：2008-03-05

申请人： Ji-Myoung Lee ,  Min-Sang Kim ,  Eun-Jung Yun ,  Sung-Young Lee ,  In-Hyuk Choi

发明人： Ji-Myoung Lee ,  Min-Sang Kim ,  Eun-Jung Yun ,  Sung-Young Lee ,  In-Hyuk Choi

IPC分类号： G11C11/50

CPC分类号： H01L27/10 ,  G11C11/50 ,  H01H59/0009 ,  H01L27/105 ,  H01L27/115 ,  Y10T29/49105

摘要： A multibit electro-mechanical memory device and a method of manufacturing the same include a substrate, a bit line on the substrate; a lower word line and a trap site isolated from the bit line, a pad electrode isolated from a sidewall of the trap site and the lower word line and connected to the bit line, a cantilever electrode suspended over a lower void in an upper part of the trap site, and connected to the pad electrode and curved by an electrical field induced by a charge applied to the lower word line, a contact part for concentrating a charge induced from the cantilever electrode thereon in response to the charge applied from the lower word line and the trap site, the contact part protruding from an end part of the cantilever electrode, and an upper word line formed with an upper void above the cantilever electrode.

摘要翻译： 多位机电存储器件及其制造方法包括衬底，衬底上的位线; 与位线隔离的下部字线和陷阱位置，从陷阱位置的侧壁和下部字线隔离并连接到位线的焊盘电极，悬挂在上部的下部空隙上的悬臂电极 陷阱位置，并且连接到焊盘电极并由施加到下字线的电荷引起的电场弯曲;接触部分，用于响应于从下位词施加的电荷而将从悬臂电极引起的电荷聚集在其上 线和捕获部位，从悬臂电极的端部突出的接触部分和在悬臂电极上方形成有上部空隙的上字线。