摘要:
A memory device includes a temperature sensor configured to generate a temperature detection signal responsive to a temperature of the memory device and a self-refresh control circuit configured to control a refresh of the memory device responsive to the temperature detection signal. The device further includes a temperature-detection-error sensing circuit configured to assert a temperature-detection-error signal responsive to an error in the temperature detection signal. The temperature-detection-error sensing circuit may be configured to provide the asserted temperature-detection-error signal at a temperature-detection-error sensing pad configured to be coupled to an external device and/or the device may further include a temperature sensor control circuit configured to control the temperature detection signal responsive to the temperature-detection-error signal. Related operating and testing methods may be provided.
摘要:
A smart design system provides a mobile application design and a simulation function, a business model including the smart design system, and a method of operating the smart design system. A method of operating a smart design system includes selecting at least one product of a plurality of products by searching a database storing information related to the plurality of products. The method includes designing an application that includes the selected at least one product. The designing may be used to produce the application. The method includes providing at least one recommended product of the plurality of products. The recommended product is applicable to the application. The method includes providing a market trend analysis. The market trend analysis is generated by searching for information related to a market trend of at least one of the plurality of products applicable to the application.
摘要:
A semiconductor memory device having internal circuits responsive to temperature data, in order to compensate an output characteristic change of the internal circuits and reduce power consumption depending on temperature change, and method thereof are disclosed. The semiconductor memory device may include a temperature sensing circuit and an internal circuit. The temperature sensing circuit may generate and output temperature data in response to ambient temperature of the semiconductor memory device. The internal circuit may adjust an output level of an output signal in response to the temperature data from the temperature sensing circuit.
摘要:
An apparatus and method are disclosed to control an operation of a reciprocating compressor capable of precisely controlling an operation (stroke) of a reciprocating compressor regardless of a parameter of an internal motor of the reciprocating compressor and a mechanical error of the reciprocating compressor. The apparatus for controlling an operation of a reciprocating compressor which determines a stroke estimate value corresponding to a point when a discharge valve of the reciprocating compressor is opened as a stroke reference value, and controls a voltage applied to the reciprocating compressor according to the determined stroke reference value.
摘要:
A memory device includes a temperature sensor configured to generate a temperature detection signal responsive to a temperature of the memory device and a self-refresh control circuit configured to control a refresh of the memory device responsive to the temperature detection signal. The device further includes a temperature-detection-error sensing circuit configured to assert a temperature-detection-error signal responsive to an error in the temperature detection signal. The temperature-detection-error sensing circuit may be configured to provide the asserted temperature-detection-error signal at a temperature-detection-error sensing pad configured to be coupled to an external device and/or the device may further include a temperature sensor control circuit configured to control the temperature detection signal responsive to the temperature-detection-error signal. Related operating and testing methods may be provided.
摘要:
A semiconductor memory device having internal circuits responsive to temperature data, in order to compensate an output characteristic change of the internal circuits and reduce power consumption depending on temperature change, and method thereof are disclosed. The semiconductor memory device may include a temperature sensing circuit and an internal circuit. The temperature sensing circuit may generate and output temperature data in response to ambient temperature of the semiconductor memory device. The internal circuit may adjust an output level of an output signal in response to the temperature data from the temperature sensing circuit.