摘要:
An object of the present invention is to produce an oxide film having good surface morphology and crystal quality, by a metal organic chemical vapor deposition using two or more raw material gases of metal organic compounds and oxygen gas. It is used a film forming system having a first supply hole 11A, a second supply hole 11B, a third supply hole 11C and a film forming chamber 7. A first raw material gas “A” containing a first metal organic compound is supplied through the first supply hole 11A into the chamber 7. A second raw material gas “B” containing the second metal organic compound is supplied through the second supply hole 11B into the chamber 7, and oxygen gas “C” is supplied through the third supply hole 11C into the chamber 7. The oxygen gas “D” contacts the first raw material gas “E” before the oxygen gas is mixed with the second raw material gas “F” in the chamber 7.
摘要:
An object of the present invention is to produce an oxide film having good surface morphology and crystal quality, by a metal organic chemical vapor deposition using two or more raw material gases of metal organic compounds and oxygen gas. It is used a film forming system having a first supply hole 11A, a second supply hole 11B, a third supply hole 11C and a film forming chamber 7. A first raw material gas “A” containing al first metal organic compound is supplied through the first supply hole 11A into the chamber 7. A second raw material gas “B” containing the second metal organic compound is supplied through the second supply hole 11B into the chamber 7, and oxygen gas “C” is supplied through the third supply hole 11C into the chamber 7. The oxygen gas “D” contacts the first raw material gas “E” before the oxygen gas is mixed with the second raw material gas “F” in the chamber 7.
摘要:
An object of the present invention is to provide a practical device for generating blue laser beam having a wavelength of 457 nm. The present invention provides a device for generating blue laser beam. The device has a solid-state laser oscillator 3 composed of Nd-doped YVO4 crystal and having a length of not smaller than 0.1 mm and not larger than 1.0 mm, a reflecting means 6A, 6B provided in the oscillator 3, an illuminating means 1 for illuminating pump light beam to the oscillator 3, and a waveguide-type device 5 for generating harmonic wave. The oscillator 3 and reflecting means 1 constitute a resonator 7. The waveguide-type device 5 is provided outside of the resonator 7. The oscillator 3 oscillates laser beam having a wavelength of 914±1 nm, and the waveguide-type device 5 oscillates blue laser “E” having a wavelength of 457±1 nm.
摘要:
In a process for producing a planar body of an oxide single crystal with a &mgr; pulling-down method, a shoulder portion having a larger width is grown without any polycrystal regions, cracks or crystal deteriorations in a central portion of the planar body. A raw material of the oxide single crystal is melted in a crucible. A seed crystal is contacted to a melt of the raw material near an opening of a nozzle 13 of the crucible. Then, the melt 18 is drawn from the opening by pulling down the seed crystal to form a planar body 14A. A temperature distribution of the nozzle 13 in a direction perpendicular to the drawing direction B is controlled by supplying heat to the nozzle 13 and/or by removing heat from the nozzle 13.
摘要:
A method for forming a ferroelectric domain-inverted structure, having the steps of joining at least two kinds of ferroelectric material which have different spontaneous polarizations, and ferroelectric domain-inverting one of the ferroelectric materials and thereby ferroelectric domain-inverting the other ferroelectric material joined thereto.
摘要:
In producing an optical single crystal epitaxial film from a melt containing a transition metal on a single crystal substrate by a liquid phase epitaxial method, this process contains the steps of: annealing the film at a predetermined temperature in an ozonic atmosphere; and temperature-increasing and -decreasing to and from the predetermined temperature, wherein at least one of temperature-increasing and -decreasing steps, the film is exposed to a substantially ozone-free atmosphere.
摘要:
A process for growing a crystalline silicon plate, including the steps of arranging a planar growth member and a growth crucible in which a melt of silicon is placed and which is provided with a melt draw-out opening at a lower side thereof, while at least a tip portion of the growth member is located under the draw-out opening, drawing out the melt from the crucible through the draw-out opening, bringing the drawn out melt into contact with the tip portion of the growth member, and further pulling down the melt through the tip portion of the growth member.
摘要:
A light modulator for modulating light upon application of a signal voltage, said light modulator including a substrate, an optical waveguide formed on a side of a front surface of the substrate, and first and secondary electrodes for applying the signal voltage to the light propagating through the optical waveguide, the first electrode being formed on a front surface side of the optical waveguide and including a main portion covering the front surface side of the optical waveguide and a first overhanging portion hanging over toward one side from the main portion.
摘要:
A process is disclosed for producing an integrated composite oxide single crystal body composed of a core portion made of an oxide single crystal and a clad portion integrated with the core portion and made of another oxide single crystal having a composition different from that of the oxide single crystal constituting the core portion, the process comprising the steps of: (1) preparing a first melt in a first crucible by melting a first material for a first oxide single crystal to constitute the core portion inside the first crucible, (2) preparing a second melt inside a second crucible by melting a second material for a second oxide single crystal to constitute the clad portion inside the second crucible, (3) contacting a seed crystal to the first and second melts, (4) pulling down the first melt through a pull-out opening of the first crucible, (5) pulling down the second melt through a pull-out opening of the second crucible and contacting the pulled-down second melt with a pulled-down portion of the first melt, and (6) integrally pulling down the first and second melts.
摘要:
A process is disclosed for continuously producing a single crystal by drawing downwardly a melt of a single crystal raw material, wherein a single crystal body grown from the melt is continuously pulled downwardly, and a plurality of single crystal products are continuously formed by intermittently cutting the single crystal body being downwardly moved.