公开(公告)号：US20130004404A1

公开(公告)日：2013-01-03

申请号：US13533035

申请日：2012-06-26

申请人： Mitsutoshi Narukawa

发明人： Mitsutoshi Narukawa

IPC分类号： C01B33/107

CPC分类号： C01F7/58 ,  C01B33/1071

摘要： This method for manufacturing trichlorosilane, includes: reacting metallurgical grade silicon with silicon tetrachloride and hydrogen so as to obtain a reaction gas; condensing the reaction gas so as to obtain a condensate; and distilling the condensate using a distillation system including a first distillation column and a secondary distillation column so as to refine trichlorosilane. While maintaining the condensate in a high temperature state so that a concentration of aluminum chloride in the condensate becomes in a range of a saturation solubility or less, the condensate flows to the first distillation column. A liquid distilled in the first distillation column is distilled by the secondary distillation column so as to refine trichlorosilane. A liquid in which aluminum chloride is concentrated is extracted from a bottom portion of the first distillation column. The extracted liquid is concentrated and dried, and then aluminum chloride is exhausted.

摘要翻译： 该制造三氯硅烷的方法包括：使冶金级硅与四氯化硅和氢反应，得到反应气体; 冷凝反应气体以获得冷凝物; 并使用包括第一蒸馏塔和二级蒸馏塔的蒸馏系统蒸馏冷凝物，以精制三氯硅烷。 在将冷凝物保持在高温状态下，使冷凝物中的氯化铝浓度变成饱和溶解度以下的范围内，冷凝物流入第一蒸馏塔。 在第一蒸馏塔中蒸馏的液体通过二次蒸馏塔蒸馏以精制三氯硅烷。 其中氯化铝浓缩的液体从第一蒸馏塔的底部提取。 将萃取液浓缩并干燥，然后排出氯化铝。

公开(公告)号：US20120164053A1

公开(公告)日：2012-06-28

申请号：US13414083

申请日：2012-03-07

申请人： Mitsutoshi NARUKAWA

发明人： Mitsutoshi NARUKAWA

IPC分类号： C01B33/107

CPC分类号： B01J8/1836 ,  B01J8/0055 ,  B01J8/1872 ,  B01J8/34 ,  B01J2208/00053 ,  B01J2208/00061 ,  B01J2208/00132 ,  B01J2208/0084 ,  B01J2208/00867 ,  B01J2208/025 ,  C01B33/10763

摘要： An apparatus for producing trichlorosilane in which metallurgical grade silicon powder supplied to a reactor is reacted with hydrogen chloride gas while being fluidized by the hydrogen chloride gas, thereby discharging trichlorosilane generated by the reaction from the reactor, includes: a plurality of gas flow controlling members which are installed along a vertical direction in an annular shape R from an inner peripheral wall of the reactor in an internal space of the reactor; and a heat transfer tube which is installed along the vertical direction in the annular space R and through which a heating medium passes.

摘要翻译： 一种三氯硅烷的制造装置，其中供给反应器的冶金级硅粉末与氯化氢气体反应，同时被氯化氢气体流化，由此从反应器排出由反应产生的三氯硅烷，包括：多个气流控制部件 其在反应器的内部空间中从反应器的内周壁沿垂直方向安装成环形R; 以及沿着垂直方向安装在环形空间R中并且加热介质通过的传热管。

公开(公告)号：US20100061901A1

公开(公告)日：2010-03-11

申请号：US12312471

申请日：2007-10-25

申请人： Mitsutoshi Narukawa ,  Yuji Shimizu

发明人： Mitsutoshi Narukawa ,  Yuji Shimizu

IPC分类号： B01J12/00

CPC分类号： C01B33/10731 ,  B01J8/025 ,  B01J8/0285 ,  B01J12/007 ,  B01J2208/00415 ,  B01J2208/00513 ,  C01B33/10736

摘要： An apparatus for producing trichlorosilane includes a reaction container in which a supply gas containing silicon tetrachloride and hydrogen is supplied therein and a reaction product gas containing trichlorosilane and hydrogen chloride is produced; a heat transfer body which is filled in the reaction container, which is formed of a material having a melting point of at least higher than 1,400° C., and which has a void part which enables a gas to be passed; and a heating mechanism heating the heat transfer body in the reaction container.

摘要翻译： 制备三氯硅烷的装置包括反应容器，其中供应含有四氯化硅和氢气的供应气体，并产生含有三氯硅烷和氯化氢的反应产物气体; 填充在反应容器中的传热体，其由熔点至少高于1400℃的材料形成，并且具有能使气体通过的空隙部分; 以及对反应容器内的传热体进行加热的加热机构。

公开(公告)号：US20100183496A1

公开(公告)日：2010-07-22

申请号：US12656126

申请日：2010-01-19

申请人： Mitsutoshi Narukawa

发明人： Mitsutoshi Narukawa

IPC分类号： F28D7/00 ,  C01B33/107

CPC分类号： B01J8/1836 ,  B01J8/0055 ,  B01J8/1872 ,  B01J8/34 ,  B01J2208/00053 ,  B01J2208/00061 ,  B01J2208/00132 ,  B01J2208/0084 ,  B01J2208/00867 ,  B01J2208/025 ,  C01B33/10763

摘要： An apparatus for producing trichlorosilane in which metallurgical grade silicon powder supplied to a reactor is reacted with hydrogen chloride gas while being fluidized by the hydrogen chloride gas, thereby discharging trichlorosilane generated by the reaction from the reactor, includes: a plurality of gas flow controlling members which are installed along a vertical direction in an annular shape R from an inner peripheral wall of the reactor in an internal space of the reactor; and a heat transfer tube which is installed along the vertical direction in the annular space R and through which a heating medium passes.

摘要翻译： 一种三氯硅烷的制造装置，其中供给反应器的冶金级硅粉末与氯化氢气体反应，同时被氯化氢气体流化，由此从反应器排出由反应产生的三氯硅烷，包括：多个气流控制部件 其在反应器的内部空间中从反应器的内周壁沿垂直方向安装成环形R; 以及沿着垂直方向安装在环形空间R中并且加热介质通过的传热管。

公开(公告)号：US06846473B2

公开(公告)日：2005-01-25

申请号：US10113982

申请日：2002-04-02

申请人： Seiichi Kirii ,  Mitsutoshi Narukawa ,  Hisayuki Takesue

发明人： Seiichi Kirii ,  Mitsutoshi Narukawa ,  Hisayuki Takesue

IPC分类号： C01B33/03 ,  C01B33/035 ,  C01B33/107

CPC分类号： C01B33/035 ,  C01B33/03 ,  C01B33/107

摘要： A process for producing hexachlorodisilane comprising, condensing an exhaust gas discharged from a reactor for producing polycrystalline silicon from a chlorosilane and hydrogen to separate the hydrogen, distilling the resultant condensate to separate the unreacted chlorosilane and by-product silicon tetrachloride, and then further distilling to recover hexachlorodisilane, wherein tetrachlorodisilane can be recovered together with the hexachlorodisilane, and the hexachlorodisilane and tetrachlorodisilane recovered have a far higher purity than the conventional ones produced from metallic silicon.

摘要翻译： 一种生产六氯二硅烷的方法，其特征在于，将从用于制备多氯硅的反应器排出的废气从氯硅烷和氢中分离出来，蒸馏出所得的冷凝物，分离出未反应的氯硅烷和副产物四氯化硅，然后进一步蒸馏 回收六氯二硅烷，其中四氯二硅烷可以与六氯二硅烷一起回收，并且回收的六氯二硅烷和四氯二硅烷具有比由金属硅制备的常规的纯度高得多的纯度。

公开(公告)号：US09724665B2

公开(公告)日：2017-08-08

申请号：US13414083

申请日：2012-03-07

申请人： Mitsutoshi Narukawa

发明人： Mitsutoshi Narukawa

IPC分类号： C01B33/107 ,  B01J8/18 ,  B01J8/00 ,  B01J8/34

CPC分类号： B01J8/1836 ,  B01J8/0055 ,  B01J8/1872 ,  B01J8/34 ,  B01J2208/00053 ,  B01J2208/00061 ,  B01J2208/00132 ,  B01J2208/0084 ,  B01J2208/00867 ,  B01J2208/025 ,  C01B33/10763

摘要： An apparatus for producing trichlorosilane in which metallurgical grade silicon powder supplied to a reactor is reacted with hydrogen chloride gas while being fluidized by the hydrogen chloride gas, thereby discharging trichlorosilane generated by the reaction from the reactor, includes: a plurality of gas flow controlling members which are installed along a vertical direction in an annular shape R from an inner peripheral wall of the reactor in an internal space of the reactor; and a heat transfer tube which is installed along the vertical direction in the annular space R and through which a heating medium passes.

公开(公告)号：US08828345B2

公开(公告)日：2014-09-09

申请号：US13533035

申请日：2012-06-26

申请人： Mitsutoshi Narukawa

发明人： Mitsutoshi Narukawa

IPC分类号： C01B33/00 ,  C01B33/08 ,  C01B33/04 ,  C01B33/02

CPC分类号： C01F7/58 ,  C01B33/1071

摘要： This method for manufacturing trichlorosilane, includes: reacting metallurgical grade silicon with silicon tetrachloride and hydrogen so as to obtain a reaction gas; condensing the reaction gas so as to obtain a condensate; and distilling the condensate using a distillation system including a first distillation column and a secondary distillation column so as to refine trichlorosilane. While maintaining the condensate in a high temperature state so that a concentration of aluminum chloride in the condensate becomes in a range of a saturation solubility or less, the condensate flows to the first distillation column. A liquid distilled in the first distillation column is distilled by the secondary distillation column so as to refine trichlorosilane. A liquid in which aluminum chloride is concentrated is extracted from a bottom portion of the first distillation column. The extracted liquid is concentrated and dried, and then aluminum chloride is exhausted.

摘要翻译： 该制造三氯硅烷的方法包括：使冶金级硅与四氯化硅和氢反应，得到反应气体; 冷凝反应气体以获得冷凝物; 并使用包括第一蒸馏塔和二级蒸馏塔的蒸馏系统蒸馏冷凝物，以精制三氯硅烷。 在将冷凝物保持在高温状态下，使冷凝物中的氯化铝浓度变成饱和溶解度以下的范围内，冷凝物流入第一蒸馏塔。 在第一蒸馏塔中蒸馏的液体通过二次蒸馏塔蒸馏以精制三氯硅烷。 其中氯化铝浓缩的液体从第一蒸馏塔的底部提取。 将萃取液浓缩并干燥，然后排出氯化铝。

公开(公告)号：US20100068125A1

公开(公告)日：2010-03-18

申请号：US12559826

申请日：2009-09-15

申请人： Mitsutoshi Narukawa ,  Kenichi Watabe

发明人： Mitsutoshi Narukawa ,  Kenichi Watabe

IPC分类号： C09C1/44

CPC分类号： C01B33/035 ,  C01B32/05

摘要： A method of refining carbon parts for the production of polycrystalline silicon, comprises the steps of, replacing an inside gas of a reactor, in which the carbon parts are placed, with an inert gas, drying the carbon parts by raising a temperature in the reactor to a drying temperature of the carbon parts while flowing an inert gas through the reactor, raising a temperature in the reactor to a purification temperature higher than the drying temperature while flowing chlorine gas through the reactor, reducing a pressure in the reactor, maintaining the inside of the reactor in a reduced pressure, pressurizing the inside of the reactor by introducing chlorine gas for bringing the inside of the reactor into a pressurized state, and cooling the inside of the reactor.

摘要翻译： 一种精制用于制造多晶硅的碳部件的方法包括以下步骤：用惰性气体代替其中放置碳部件的反应器的内部气体，通过升高反应器中的温度来干燥碳部件 在使惰性气体流过反应器的同时使干燥温度升高到高于干燥温度的净化温度，同时使氯气流过反应器，降低反应器内的压力，保持内部 的反应器中，通过引入氯气使反应器内部进入加压状态，并对反应器内部进行冷却来对反应器内部进行加压。

公开(公告)号：US20090238748A1

公开(公告)日：2009-09-24

申请号：US12382659

申请日：2009-03-20

申请人： Teruhisa Kitagawa ,  Mitsutoshi Narukawa ,  Chikara Inaba

发明人： Teruhisa Kitagawa ,  Mitsutoshi Narukawa ,  Chikara Inaba

IPC分类号： C01B33/107 ,  B01J19/24

CPC分类号： B01J8/0285 ,  B01J2208/00123 ,  B01J2219/00268 ,  C01B33/10778

摘要： Aluminum chloride from a gas containing chlorosilanes produced in a chlorination reactor is effectively removed. A container 1 is filled with sodium chloride and heated by a heating device 17, a gas containing chlorosilanes produced by a reaction between metallurgical grade silicon and hydrogen chloride passes through the sodium chloride layer 16 to generate a double salt of aluminum chloride contained in the gas and the sodium chloride, and the gas from which the double salt is separated is recovered from a gas recovery tube 26.

摘要翻译： 在氯化反应器中生产的含氯硅烷的气体中的氯化铝被有效地去除。 容器1填充氯化钠并通过加热装置17加热，含有通过冶金级硅和氯化氢之间的反应产生的氯硅烷的气体通过氯化钠层16以产生气体中所含的二氯化铝盐 和氯化钠，从气体回收管26回收双重盐分离的气体。

公开(公告)号：US5346557A

公开(公告)日：1994-09-13

申请号：US967066

申请日：1992-10-28

申请人： Hideo Ito ,  Mitsutoshi Narukawa ,  Kazuhiro Sakai

发明人： Hideo Ito ,  Mitsutoshi Narukawa ,  Kazuhiro Sakai

IPC分类号： H01L21/306 ,  B08B3/04

CPC分类号： H01L21/02046 ,  H01L21/02052

摘要： In a process for cleaning a silicon mass with a acid washing solution, a waste solution containing a mixed acid composed of nitric acid and hydrofluoric acid is introduced to a distillation step, and hydrofluoric acid is introduced to a distillation cooling portion to prevent precipitation of silicon dioxide. The waste cleaning liquor is distilled to recover nitric acid.

摘要翻译： 在用酸性洗涤液清洗硅团块的过程中，将含有由硝酸和氢氟酸组成的混合酸的废液引入蒸馏步骤，并将氢氟酸引入蒸馏冷却部分以防止硅沉淀 二氧化碳 将废液清洗液蒸馏回收硝酸。