公开(公告)号：US09406729B2

公开(公告)日：2016-08-02

申请号：US13611901

申请日：2012-09-12

申请人： Guang hai Jin ,  Jae-Beom Choi ,  Kwan-Wook Jung ,  June-Woo Lee ,  Moo-Jin Kim ,  Na-Young Kim

发明人： Guang hai Jin ,  Jae-Beom Choi ,  Kwan-Wook Jung ,  June-Woo Lee ,  Moo-Jin Kim ,  Na-Young Kim

IPC分类号： H01L51/00 ,  H01L27/32 ,  H01L51/52

CPC分类号： H01L27/3248 ,  H01L27/3244 ,  H01L27/3258 ,  H01L27/3276 ,  H01L51/5203 ,  H01L2227/323 ,  H01L2251/568

摘要： An organic light emitting diode (OLED) display includes a light-emitting region including an organic emission layer and a non-light-emitting region neighboring the light-emitting region. The OLED display includes a first electrode positioned at the light-emitting region and including a plurality of division regions divided according to a virtual cutting line crossing the light-emitting region, an organic emission layer positioned on the first electrode, a second electrode positioned on the organic emission layer, a driving thin film transistor connected to the first electrode, and a plurality of input terminals positioned at the non-light-emitting region and respectively connecting between each of division regions and the driving thin film transistor.

摘要翻译： 有机发光二极管（OLED）显示器包括包括有机发射层和与发光区域相邻的非发光区域的发光区域。 OLED显示器包括位于发光区域的第一电极，并且包括根据与发光区域交叉的虚拟切割线划分的多个分割区域，位于第一电极上的有机发射层，位于第一电极上的第二电极 有机发射层，连接到第一电极的驱动薄膜晶体管和位于非发光区域并分别连接在每个分割区域和驱动薄膜晶体管之间的多个输入端子。

公开(公告)号：US09142163B2

公开(公告)日：2015-09-22

申请号：US13528294

申请日：2012-06-20

申请人： Guang-Hai Jin ,  Jae-Beom Choi ,  Kwan-Wook Jung ,  June-Woo Lee ,  Moo-Jin Kim ,  Ga-Young Kim

发明人： Guang-Hai Jin ,  Jae-Beom Choi ,  Kwan-Wook Jung ,  June-Woo Lee ,  Moo-Jin Kim ,  Ga-Young Kim

IPC分类号： G09G3/32

CPC分类号： G09G3/3266 ,  G09G2330/12

摘要： An organic light emitting display device includes a pixel unit including a plurality of pixels formed in regions where a plurality of scan lines and a plurality of data lines cross each other, a first scan driving unit detecting a defect of the plurality of pixels by sequentially applying a first test signal to the plurality of scan lines, and a second scan driving unit detecting a defect of the plurality of pixels by simultaneously applying a second test signal to the plurality of scan lines.

摘要翻译： 有机发光显示装置包括像素单元，其包括形成在多条扫描线和多条数据线彼此交叉的区域中的多个像素，第一扫描驱动单元通过依次应用来检测多个像素的缺陷 对多条扫描线的第一测试信号，以及第二扫描驱动单元，通过同时向多条扫描线施加第二测试信号来检测多个像素的缺陷。

公开(公告)号：US09070598B2

公开(公告)日：2015-06-30

申请号：US13534111

申请日：2012-06-27

申请人： Guang-Hai Jin ,  Jae-Beom Choi ,  Kwan-Wook Jung ,  June-Woo Lee ,  Moo-Jin Kim ,  Se-Hun Park

发明人： Guang-Hai Jin ,  Jae-Beom Choi ,  Kwan-Wook Jung ,  June-Woo Lee ,  Moo-Jin Kim ,  Se-Hun Park

IPC分类号： H01L27/32 ,  H01L27/12 ,  G02F1/13 ,  G02F1/1362

CPC分类号： H01L27/124 ,  G02F1/1309 ,  G02F1/136259 ,  H01L27/1244 ,  H01L27/1259 ,  H01L27/3276 ,  H01L2251/568

摘要： A thin film transistor display panel includes a plurality of pixels arranged in a matrix format, the plurality of pixels include thin film transistors, respectively, a plurality of first signal lines connected with the pixels, a plurality of second signal lines connected with the pixels, the plurality of second signal lines cross the first signal lines in an insulated manner, at least one of the second signal lines includes a cut portion, and an organic repairing member overlaps the cut portion

摘要翻译： 薄膜晶体管显示面板包括以矩阵格式布置的多个像素，多个像素分别包括薄膜晶体管，与像素连接的多个第一信号线，与像素连接的多个第二信号线， 所述多个第二信号线以绝缘方式与所述第一信号线交叉，所述第二信号线中的至少一个包括切割部分，并且有机修复部件与所述切割部分重叠

公开(公告)号：US20130187167A1

公开(公告)日：2013-07-25

申请号：US13534111

申请日：2012-06-27

申请人： Guang-Hai JIN ,  Jae-Beom Choi ,  Kwan-Wook Jung ,  June-Woo Lee ,  Moo-Jin Kim ,  Se-Hun Park

发明人： Guang-Hai JIN ,  Jae-Beom Choi ,  Kwan-Wook Jung ,  June-Woo Lee ,  Moo-Jin Kim ,  Se-Hun Park

IPC分类号： H01L27/32 ,  H01L51/56

CPC分类号： H01L27/124 ,  G02F1/1309 ,  G02F1/136259 ,  H01L27/1244 ,  H01L27/1259 ,  H01L27/3276 ,  H01L2251/568

摘要： A thin film transistor display panel includes a plurality of pixels arranged in a matrix format, the plurality of pixels include thin film transistors, respectively, a plurality of first signal lines connected with the pixels, a plurality of second signal lines connected with the pixels, the plurality of second signal lines cross the first signal lines in an insulated manner, at least one of the second signal lines includes a cut portion, and an organic repairing member overlaps the cut portion

摘要翻译： 薄膜晶体管显示面板包括以矩阵格式布置的多个像素，多个像素分别包括薄膜晶体管，与像素连接的多个第一信号线，与像素连接的多个第二信号线， 所述多个第二信号线以绝缘方式与所述第一信号线交叉，所述第二信号线中的至少一个包括切割部分，并且有机修复部件与所述切割部分重叠

公开(公告)号：US08227326B2

公开(公告)日：2012-07-24

申请号：US12970580

申请日：2010-12-16

申请人： Kwang-Hae Kim ,  Moo-Jin Kim

发明人： Kwang-Hae Kim ,  Moo-Jin Kim

IPC分类号： H01L21/20

CPC分类号： H01L21/0237 ,  H01L21/02532 ,  H01L21/02672 ,  H01L21/02675 ,  H01L27/1277 ,  H01L29/66757

摘要： A crystallization method, a method of manufacturing a thin-film transistor, and a method of manufacturing a display device are provided. The crystallization method includes: forming a backup amorphous silicon layer on a substrate, forming nickel particles on the backup amorphous silicon layer, converting the backup amorphous silicon layer into an amorphous silicon layer by thermally processing the backup amorphous silicon layer so as to diffuse the nickel particles throughout said backup amorphous silicon layer; and irradiating the amorphous silicon layer with energy from a laser.

摘要翻译： 提供了一种结晶方法，一种制造薄膜晶体管的方法和一种制造显示装置的方法。 结晶方法包括：在衬底上形成备用非晶硅层，在备用非晶硅层上形成镍颗粒，通过热处理备用非晶硅层将备用非晶硅层转化为非晶硅层，以使镍 整个所述备用非晶硅层的颗粒; 并用激光照射非晶硅层。

公开(公告)号：US20120064676A1

公开(公告)日：2012-03-15

申请号：US13301032

申请日：2011-11-21

申请人： Hye-Hyang PARK ,  Byoung-Deog Choi ,  Dae-Woo Lee ,  Chang-Young Jeong ,  Moo-Jin Kim ,  Kyoung-Bo Kim

发明人： Hye-Hyang PARK ,  Byoung-Deog Choi ,  Dae-Woo Lee ,  Chang-Young Jeong ,  Moo-Jin Kim ,  Kyoung-Bo Kim

IPC分类号： H01L21/336

CPC分类号： H01L29/4908 ,  H01L27/1214 ,  H01L29/66757

摘要： A thin film transistor includes a substrate, a semiconductor layer on the substrate, a thermal oxide layer on the semiconductor layer, a gate electrode on the thermal oxide layer, the gate electrode positioned to correspond to a channel region of the semiconductor layer, an interlayer insulating layer on the substrate, and source and drain electrodes electrically connected to the semiconductor layer.

摘要翻译： 薄膜晶体管包括衬底，衬底上的半导体层，半导体层上的热氧化物层，热氧化层上的栅电极，位于半导体层的沟道区上的栅电极，中间层 绝缘层，以及与半导体层电连接的源极和漏极。

公开(公告)号：US20110151601A1

公开(公告)日：2011-06-23

申请号：US12970580

申请日：2010-12-16

申请人： Kwang-Hae Kim ,  Moo-Jin Kim

发明人： Kwang-Hae Kim ,  Moo-Jin Kim

IPC分类号： H01L33/00 ,  H01L21/84 ,  H01L21/225

CPC分类号： H01L21/0237 ,  H01L21/02532 ,  H01L21/02672 ,  H01L21/02675 ,  H01L27/1277 ,  H01L29/66757

摘要： A crystallization method, a method of manufacturing a thin-film transistor, and a method of manufacturing a display device are provided. The crystallization method comprises: forming a backup amorphous silicon layer on a substrate, forming nickel particles on the backup amorphous silicon layer, converting the backup amorphous silicon layer into an amorphous silicon layer by thermally processing the backup amorphous silicon layer so as to diffuse the nickel particles throughout said backup amorphous silicon layer; and irradiating the amorphous silicon layer with energy from a laser.

摘要翻译： 提供了一种结晶方法，一种制造薄膜晶体管的方法和一种制造显示装置的方法。 结晶方法包括：在衬底上形成备用非晶硅层，在备用非晶硅层上形成镍颗粒，通过热处理后备非晶硅层将备用非晶硅层转化为非晶硅层，以使镍 整个所述备用非晶硅层的颗粒; 并用激光照射非晶硅层。

公开(公告)号：US07800110B2

公开(公告)日：2010-09-21

申请号：US12219747

申请日：2008-07-28

申请人： Moo-Jin Kim ,  Cheol-Su Kim ,  Ki-Yong Lee ,  Kyoung-Bo Kim

发明人： Moo-Jin Kim ,  Cheol-Su Kim ,  Ki-Yong Lee ,  Kyoung-Bo Kim

IPC分类号： H01L31/036

CPC分类号： H01L29/4908 ,  H01L29/66757

摘要： A thin film transistor (TFT), including a substrate, an active layer and a gate electrode on the substrate, and a first gate insulating layer and a second gate insulating layer between the active layer and the gate electrode. Each of the first gate insulating layer and the second gate insulating layer may have a thickness between approximately 200 Å and approximately 400 Å, inclusive.

摘要翻译： 在衬底上包括衬底，有源层和栅电极的薄膜晶体管（TFT）以及有源层和栅电极之间的第一栅极绝缘层和第二栅极绝缘层。 第一栅极绝缘层和第二栅极绝缘层中的每一个可以具有在大约等于或等于400的厚度。

公开(公告)号：US20100148163A1

公开(公告)日：2010-06-17

申请号：US12636303

申请日：2009-12-11

申请人： Ki-Ju Im ,  Yong-Sung Park ,  Yong-Woo Park ,  Moo-Jin Kim ,  Han-Hee Yoon ,  Kwang-Hae Kim ,  Sung-Won Doh ,  Kyoung-Bo Kim ,  Gun-Shik Kim ,  Jun-Sik Oh

发明人： Ki-Ju Im ,  Yong-Sung Park ,  Yong-Woo Park ,  Moo-Jin Kim ,  Han-Hee Yoon ,  Kwang-Hae Kim ,  Sung-Won Doh ,  Kyoung-Bo Kim ,  Gun-Shik Kim ,  Jun-Sik Oh

IPC分类号： H01L51/50

CPC分类号： H01L27/3269 ,  G06F3/0412 ,  G06F3/042

摘要： An organic light emitting display apparatus includes an organic light emitting diode, a photo sensor, and a light blocking portion. The light blocking portion is at at least a side of the photo sensor so that light emitted from the organic light emitting diode is not directly incident on the photo sensor.

摘要翻译： 有机发光显示装置包括有机发光二极管，光传感器和遮光部。 遮光部位于光传感器的至少一侧，使得从有机发光二极管发射的光不直接入射到光传感器上。

公开(公告)号：US20090184632A1

公开(公告)日：2009-07-23

申请号：US12320110

申请日：2009-01-16

申请人： Moo-Jin Kim ,  Kyoung-Bo Kim ,  Ki-Yong Lee ,  Han-Hee Yoon

发明人： Moo-Jin Kim ,  Kyoung-Bo Kim ,  Ki-Yong Lee ,  Han-Hee Yoon

IPC分类号： H01J1/62 ,  H01L29/786 ,  H01L21/336

CPC分类号： H01L29/4908 ,  H01L29/66757

摘要： A thin film transistor which has improved characteristics, a method of fabricating the same, and an organic light emitting diode (OLED) display device having the same. The thin film transistor includes a substrate, a semiconductor layer disposed on the substrate and including a channel region, and source and drain regions, the channel region being doped with impurities, a thermal oxide layer disposed on the semiconductor layer, a silicon nitride layer disposed on the thermal oxide layer, a gate electrode disposed on the silicon nitride layer and corresponding to a predetermined region of the semiconductor layer, an interlayer insulating layer disposed on the entire surface of the substrate, and source and drain electrodes electrically connected with the semiconductor layer.

摘要翻译： 具有改进的特性的薄膜晶体管，其制造方法和具有该薄膜晶体管的有机发光二极管（OLED）显示装置。 薄膜晶体管包括：衬底，设置在衬底上并包括沟道区的半导体层，以及源极和漏极区，掺杂有杂质的沟道区，设置在半导体层上的热氧化物层，设置有氮化硅层 在所述热氧化物层上，设置在所述氮化硅层上并对应于所述半导体层的预定区域的栅极电极，设置在所述基板的整个表面上的层间绝缘层以及与所述半导体层电连接的源极和漏极 。