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公开(公告)号：US08698564B2
公开(公告)日：2014-04-15
申请号：US13695629
申请日：2012-04-25
申请人： Tomohide Kamiyama , Hiroshi Naitou , Takashi Uno , Motoyoshi Iwata , Kazuhiro Yahata , Hikaru Ikeda
发明人： Tomohide Kamiyama , Hiroshi Naitou , Takashi Uno , Motoyoshi Iwata , Kazuhiro Yahata , Hikaru Ikeda
IPC分类号： H03F3/68
CPC分类号： H03F3/193 , H01L23/4824 , H01L23/66 , H01L2223/6611 , H01L2223/6655 , H01L2224/48091 , H01L2224/49175 , H01L2924/1305 , H01L2924/30107 , H01L2924/3011 , H03F3/211 , H03F3/245 , H03F2200/108 , H03F2200/429 , H03F2203/21142 , H01L2924/00014 , H01L2924/00
摘要： A radio frequency amplifier circuit includes: low-output transistors, each of which includes an input terminal, an output terminal, and a ground terminal, and amplifies a radio frequency signal; a harmonic processing circuit provided for each of the low-output transistors to be connected to the output terminal of the low-output transistor, and processing a secondary harmonic included in an amplified radio frequency signal, and a resistor connected to the output terminal of each of the low-output transistors. The input terminal of each of the low-output transistors is connected to an input terminal of the radio frequency amplifier circuit via an inductor, and the output terminal of each of the low-output transistors is connected to the other output terminal via the resistance and is further connected to an output terminal of the radio frequency amplifier circuit via an inductor.
摘要翻译： 射频放大器电路包括：低输出晶体管，每个晶体管包括输入端子，输出端子和接地端子，并放大射频信号; 为与低输出晶体管的输出端子连接的每个低输出晶体管提供的谐波处理电路，以及处理放大的射频信号中包括的二次谐波，以及连接到每个的输出端子的电阻器 的低输出晶体管。 每个低输出晶体管的输入端经由电感器连接到射频放大器电路的输入端，并且每个低输出晶体管的输出端通过电阻连接到另一个输出端， 通过电感器进一步连接到射频放大器电路的输出端子。
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公开(公告)号：US20130106519A1
公开(公告)日：2013-05-02
申请号：US13695629
申请日：2012-04-25
申请人： Tomohide Kamiyama , Hiroshi Naitou , Takashi Uno , Motoyoshi Iwata , Kazuhiro Yahata , Hikaru Ikeda
发明人： Tomohide Kamiyama , Hiroshi Naitou , Takashi Uno , Motoyoshi Iwata , Kazuhiro Yahata , Hikaru Ikeda
IPC分类号： H03F3/193
CPC分类号： H03F3/193 , H01L23/4824 , H01L23/66 , H01L2223/6611 , H01L2223/6655 , H01L2224/48091 , H01L2224/49175 , H01L2924/1305 , H01L2924/30107 , H01L2924/3011 , H03F3/211 , H03F3/245 , H03F2200/108 , H03F2200/429 , H03F2203/21142 , H01L2924/00014 , H01L2924/00
摘要： A radio frequency amplifier circuit includes: low-output transistors, each of which includes an input terminal, an output terminal, and a ground terminal, and amplifies a radio frequency signal; a harmonic processing circuit provided for each of the low-output transistors to be connected to the output terminal of the low-output transistor, and processing a secondary harmonic included in an amplified radio frequency signal, and a resistor connected to the output terminal of each of the low-output transistors. The input terminal of each of the low-output transistors is connected to an input terminal of the radio frequency amplifier circuit via an inductor, and the output terminal of each of the low-output transistors is connected to the other output terminal via the resistance and is further connected to an output terminal of the radio frequency amplifier circuit via an inductor.
摘要翻译： 射频放大器电路包括：低输出晶体管，每个晶体管包括输入端子，输出端子和接地端子，并放大射频信号; 为与低输出晶体管的输出端子连接的每个低输出晶体管提供的谐波处理电路，以及处理放大的射频信号中包括的二次谐波，以及连接到每个的输出端子的电阻器 的低输出晶体管。 每个低输出晶体管的输入端经由电感器连接到射频放大器电路的输入端，并且每个低输出晶体管的输出端通过电阻连接到另一个输出端， 通过电感器进一步连接到射频放大器电路的输出端子。
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公开(公告)号：US20090256637A1
公开(公告)日：2009-10-15
申请号：US12420955
申请日：2009-04-09
IPC分类号： H03F3/04
CPC分类号： H03F1/302
摘要： It is an object of the present invention to provide a high-frequency power amplifier capable of improving the linearity at the time of high output by preventing decrease in power of bias supply transistor. The high-frequency power amplifier is a high-frequency power amplifier including high-frequency power amplifier transistors and connected in multiple stages and bias supply transistors and each of which supplies bias current to a base of a corresponding one of said high-frequency power amplifier transistors, and each of which is connected to a common power supply terminal which is further connected to a collector of the high-frequency power amplifier transistor at a first stage among said high-frequency power amplifier transistors, and a passive element connected between the common supply terminal and a collector of the corresponding one of said bias supply transistors connected to the high-frequency power amplifier transistor at the first stage.
摘要翻译： 本发明的目的是提供一种能够通过防止偏置电源晶体管的功率降低来提高高输出时的线性度的高频功率放大器。 高频功率放大器是一种高频功率放大器，包括高频功率放大器晶体管，并连接多级和偏置电源晶体管，并且每个都向所述高频功率放大器的相应一个的基极提供偏置电流 晶体管，并且其中的每一个连接到公共电源端子，该公共电源端子在所述高频功率放大器晶体管中的第一级进一步连接到高频功率放大器晶体管的集电极，以及连接在所述高频功率放大器晶体管之间的无源元件 电源端子和在第一级连接到高频功率放大器晶体管的相应一个所述偏置电源晶体管的集电极。
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公开(公告)号：US20070236293A1
公开(公告)日：2007-10-11
申请号：US11783463
申请日：2007-04-10
IPC分类号： H03F3/04
摘要： To provide a high-frequency power amplifier capable of improving the linearity and efficiency of a high-frequency power amplifier by stabilizing, at high frequencies, the bias voltage of a bias circuit featuring the temperature compensating effect of a high-frequency amplifying transistor, a capacitor 61 is connected between the base of a bias supply transistor 41 and a reference potential. It is thus possible to possible to suppress variations in the base voltage of the bias supply transistor 41 in particular when the high-frequency power amplifier is at high output and improve the linearity of the high-frequency power amplifier.
摘要翻译： 为了提供能够通过在高频下稳定具有高频放大晶体管的温度补偿效应的偏置电路的偏置电压来提高高频功率放大器的线性度和效率的高频功率放大器， 电容器61连接在偏置电源晶体管41的基极和参考电位之间。 因此，有可能抑制偏置电源晶体管41的基极电压的变动，特别是当高频功率放大器处于高输出状态并且提高高频功率放大器的线性时。
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公开(公告)号：US20060255880A1
公开(公告)日：2006-11-16
申请号：US11414486
申请日：2006-05-01
申请人： Hidefumi Suzaki , Motoyoshi Iwata
发明人： Hidefumi Suzaki , Motoyoshi Iwata
IPC分类号： H01P1/10
CPC分类号： H03F3/19
摘要： An RF amplifier includes a transistor for an RF signal amplification; and a diode which is connected at one of two terminals thereof to an input terminal of the transistor and receives the RF signal at the other terminal. This structure enables the RF amplifier to operate stably.
摘要翻译： RF放大器包括用于RF信号放大的晶体管; 以及二极管，其两端连接到晶体管的输入端，并在另一端接收RF信号。 该结构使得RF放大器能够稳定地工作。
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公开(公告)号：US20060044067A1
公开(公告)日：2006-03-02
申请号：US11213842
申请日：2005-08-30
申请人： Hidefumi Suzaki , Jae-Woo Park , Motoyoshi Iwata , Yorito Ota
发明人： Hidefumi Suzaki , Jae-Woo Park , Motoyoshi Iwata , Yorito Ota
IPC分类号： H03F3/68
摘要： In a high-frequency power amplifier of the present invention, when a short circuit occurs between a gate or source or between a base and emitter in one of unit cells comprising a multi-cell, influence on the operations of the other normal unit cells is suppressed by a direct-current interrupting characteristic of a diode disposed for each of the unit cells.
摘要翻译： 在本发明的高频功率放大器中，当在包括多单元的单元电池之一中的栅极或源极之间或基极与发射极之间发生短路时，对其它正常单元电池的操作的影响是 通过为每个单元电池设置的二极管的直流中断特性抑制。
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公开(公告)号：US20110050348A1
公开(公告)日：2011-03-03
申请号：US12859914
申请日：2010-08-20
IPC分类号： H03F3/68
CPC分类号： H03F3/195 , H03F1/32 , H03F3/24 , H03F2200/111 , H03F2200/222 , H03F2200/387 , H03F2200/414 , H03F2200/417 , H03F2200/421 , H03F2200/429 , H03F2200/451
摘要： An RF power amplifier according to an implementation of the present invention includes: a first power amplifier which linearly amplifies a first RF signal of a first frequency band; a second power amplifier which linearly amplifies a second RF signal of a second frequency band lower than the first frequency band; a third power amplifier which nonlinearly amplifies a third RF signal of the first frequency band; a fourth power amplifier which nonlinearly amplifies a fourth RF signal of the second frequency band, and input lines of the respective power amplifiers do not cross each other on semiconductor substrates, and the output lines of the respective power amplifiers do not cross each other on the semiconductor substrates.
摘要翻译： 根据本发明的实施例的RF功率放大器包括：第一功率放大器，其线性放大第一频带的第一RF信号; 第二功率放大器，其线性放大低于第一频带的第二频带的第二RF信号; 第三功率放大器，其非线性地放大所述第一频带的第三RF信号; 第四功率放大器，其非线性地放大第二频带的第四RF信号，并且各个功率放大器的输入线在半导体衬底上不互相交叉，并且各个功率放大器的输出线在 半导体衬底。
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公开(公告)号：US07504887B2
公开(公告)日：2009-03-17
申请号：US11783463
申请日：2007-04-10
IPC分类号： H03F3/04
摘要： To provide a high-frequency power amplifier capable of improving the linearity and efficiency of a high-frequency power amplifier by stabilizing, at high frequencies, the bias voltage of a bias circuit featuring the temperature compensating effect of a high-frequency amplifying transistor, a capacitor 61 is connected between the base of a bias supply transistor 41 and a reference potential. It is thus possible to possible to suppress variations in the base voltage of the bias supply transistor 41 in particular when the high-frequency power amplifier is at high output and improve the linearity of the high-frequency power amplifier.
摘要翻译： 为了提供能够通过在高频下稳定具有高频放大晶体管的温度补偿效应的偏置电路的偏置电压来提高高频功率放大器的线性度和效率的高频功率放大器， 电容器61连接在偏置电源晶体管41的基极和参考电位之间。 因此，有可能抑制偏置电源晶体管41的基极电压的变动，特别是当高频功率放大器处于高输出状态并且提高高频功率放大器的线性时。
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公开(公告)号：US08947166B2
公开(公告)日：2015-02-03
申请号：US13824425
申请日：2012-05-22
申请人： Takashi Uno , Hikaru Ikeda , Kazuhiro Yahata , Motoyoshi Iwata , Hiroshi Naitou , Tomohide Kamiyama
发明人： Takashi Uno , Hikaru Ikeda , Kazuhiro Yahata , Motoyoshi Iwata , Hiroshi Naitou , Tomohide Kamiyama
CPC分类号： H03F3/193 , H03F1/0205 , H03F1/565 , H03F3/601 , H03F2200/387 , H03F2200/423
摘要： A radio frequency power amplifier includes: an amplifying element which amplifies an input signal and outputs the signal from an output terminal; and an output load circuit which includes a first resonant circuit and a second resonant circuit that are connected to the output terminal. The first resonant circuit has a resonance frequency higher than the frequency of the second harmonic of the input signal, and the second resonant circuit has a resonance frequency lower than the frequency of the third harmonic of the input signal. The output load circuit has such an impedance looking from the output terminal that a phase of a reflection coefficient at the second harmonic of the input signal is greater than 180 degrees and less than 360 degrees, and a phase of a reflection coefficient at the third harmonic of the input signal is greater than 0 degrees and less than 180 degrees.
摘要翻译： 射频功率放大器包括：放大元件，其对输入信号进行放大并输出来自输出端子的信号; 以及输出负载电路，其包括连接到输出端子的第一谐振电路和第二谐振电路。 第一谐振电路的谐振频率高于输入信号的二次谐波的频率，第二谐振电路的谐振频率低于输入信号的三次谐波的频率。 输出负载电路具有从输出端看的阻抗，输入信号的二次谐波的反射系数的相位大于180度且小于360度，并且在三次谐波处的反射系数的相位 的输入信号大于0度且小于180度。
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公开(公告)号：US20130176079A1
公开(公告)日：2013-07-11
申请号：US13824425
申请日：2012-05-22
申请人： Takashi Uno , Hikaru IKeda , Kazuhiro Yahata , Motoyoshi Iwata , Hiroshi Naitou , Tomohide Kamiyama
发明人： Takashi Uno , Hikaru IKeda , Kazuhiro Yahata , Motoyoshi Iwata , Hiroshi Naitou , Tomohide Kamiyama
IPC分类号： H03F3/193
CPC分类号： H03F3/193 , H03F1/0205 , H03F1/565 , H03F3/601 , H03F2200/387 , H03F2200/423
摘要： A radio frequency power amplifier includes: an amplifying element which amplifies an input signal and outputs the signal from an output terminal; and an output load circuit which includes a first resonant circuit and a second resonant circuit that are connected to the output terminal. The first resonant circuit has a resonance frequency higher than the frequency of the second harmonic of the input signal, and the second resonant circuit has a resonance frequency lower than the frequency of the third harmonic of the input signal. The output load circuit has such an impedance looking from the output terminal that a phase of a reflection coefficient at the second harmonic of the input signal is greater than 180 degrees and less than 360 degrees, and a phase of a reflection coefficient at the third harmonic of the input signal is greater than 0 degrees and less than 180 degrees.
摘要翻译： 射频功率放大器包括：放大元件，其对输入信号进行放大并输出来自输出端子的信号; 以及输出负载电路，其包括连接到输出端子的第一谐振电路和第二谐振电路。 第一谐振电路的谐振频率高于输入信号的二次谐波的频率，第二谐振电路的谐振频率低于输入信号的三次谐波的频率。 输出负载电路具有从输出端看的阻抗，输入信号的二次谐波的反射系数的相位大于180度且小于360度，并且在三次谐波处的反射系数的相位 的输入信号大于0度且小于180度。
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