公开(公告)号：US20120318319A1

公开(公告)日：2012-12-20

申请号：US13253921

申请日：2011-10-05

Applicant: Mustafa Pinarbasi ,  Burak Metin

Inventor： Mustafa Pinarbasi ,  Burak Metin

IPC: H01L31/05 ,  H01L31/18

CPC classification number: H01L31/0201 ,  H01L31/0504 ,  Y02E10/50

Abstract: A photovoltaic module comprises a first group of solar cells; a second group of solar cells; a first interconnection member extending across a first surface of the first group of solar cells and across a first surface of the second group of solar cells to connect the first and second groups of solar cells in parallel; and a second interconnection member extending across a second surface of the first group of solar cells and across a second surface of the second group of solar cells.

Abstract translation: 光伏模块包括第一组太阳能电池; 第二组太阳能电池; 第一互连构件，其横跨第一组太阳能电池的第一表面延伸并穿过第二组太阳能电池的第一表面，以平行地连接第一和第二组太阳能电池; 以及横跨第一组太阳能电池的第二表面并跨越第二组太阳能电池的第二表面延伸的第二互连部件。

公开(公告)号：US08318530B2

公开(公告)日：2012-11-27

申请号：US12843778

申请日：2010-07-26

Applicant: Bulent M. Basol ,  Mustafa Pinarbasi ,  James Freitag

Inventor： Bulent M. Basol ,  Mustafa Pinarbasi ,  James Freitag

IPC: H01L21/00

CPC classification number: H01L31/206 ,  C23C18/12 ,  C23C18/1204 ,  C23C18/125 ,  H01L31/022475 ,  H01L31/022483 ,  H01L31/0322 ,  H01L31/0749 ,  H01L31/1884 ,  Y02E10/541 ,  Y02P70/521

Abstract: Described is a continuous electroless deposition method and a system to form a solar cell buffer layer with a varying composition through its thickness are provided. The composition of the buffer layer is varied by varying the composition of a chemical bath deposition solution applied onto an absorber surface on which the buffer layer with varying composition is formed. In one example, the buffer layer with varying composition includes a first section containing CdS, a second section containing CdZnS formed on top of the already deposited CdS, and a third section containing ZnS is formed on the second section All the process steps are applied in a roll-to-roll fashion. In another example, a transparent conductive layer including a first transparent conductive film such as aluminum doped zinc oxide and a second transparent conductive film such as indium tin oxide is deposited over the buffer layer with the varying composition.

Abstract translation: 描述了一种连续的无电沉积方法，并且提供了通过其厚度形成具有不同组成的太阳能电池缓冲层的系统。 通过改变施加到其上形成有不同组成的缓冲层的吸收体表面上的化学浴沉积溶液的组成来改变缓冲层的组成。 在一个实例中，具有不同成分的缓冲层包括含有CdS的第一部分，在已经沉积的CdS的顶部上形成的包含CdZnS的第二部分，在第二部分上形成包含ZnS的第三部分。所有的工艺步骤都应用于 一对一的滚动时尚。 在另一个实例中，包括第一透明导电膜如铝掺杂氧化锌和第二透明导电膜如氧化铟锡的透明导电层沉积在具有不同组成的缓冲层上。

公开(公告)号：US20120266958A1

公开(公告)日：2012-10-25

申请号：US13457224

申请日：2012-04-26

Applicant: Serdar Aksu ,  Sarah Lastella ,  Alan Kleiman-Shwarsctein ,  Shirish Pethe ,  Mustafa Pinarbasi

Inventor： Serdar Aksu ,  Sarah Lastella ,  Alan Kleiman-Shwarsctein ,  Shirish Pethe ,  Mustafa Pinarbasi

IPC: H01L31/18 ,  C22C5/04 ,  C22C30/00 ,  H01L31/0216

CPC classification number: C25D5/50 ,  C23C14/165 ,  C23C14/5806 ,  C23C14/5893 ,  C23C30/00 ,  C25D3/56 ,  C25D5/10 ,  C25D7/126 ,  H01L51/426 ,  H01L51/441 ,  Y02E10/549 ,  Y02P70/521

Abstract: Described are embodiments including an apparatus that provides a thin film solar cell base structure for a photovoltaic device, a method of manufacturing a photovoltaic device, a roll to roll method of manufacturing a thin film solar cell base structure, and a ruthenium alloy sheet material.

Abstract translation: 描述了包括提供用于光伏器件的薄膜太阳能电池基底结构的装置，光伏器件的制造方法，制造薄膜太阳能电池基底结构的卷对卷方法以及钌合金片材的实施例。

公开(公告)号：US20110108099A1

公开(公告)日：2011-05-12

申请号：US12616578

申请日：2009-11-11

Applicant: Mustafa Pinarbasi ,  James Freitag

Inventor： Mustafa Pinarbasi ,  James Freitag

IPC: H01L31/00 ,  H01L21/283

CPC classification number: H01L31/022466 ,  H01L31/022483 ,  H01L31/0749 ,  H01L31/1884 ,  Y02E10/541 ,  Y02P70/521

Abstract: A solar cell including a high electrical resistivity transparent layer formed on a CdS buffer layer is provided. The high electrical resistivity transparent layer includes an intrinsic oxide film formed on the buffer layer and an intermediate oxide film formed on the intrinsic oxide film. The intrinsic oxide film includes undoped zinc oxide and has a thickness range of 10 to 40 nm. The intermediate oxide film includes semi-intrinsic zinc oxide doped with aluminum and has a thickness range of 50-150 nm. The intermediate oxide film has an aluminum concentration of less than 1000 ppm.

Abstract translation: 提供了包括形成在CdS缓冲层上的高电阻率透明层的太阳能电池。 高电阻率透明层包括形成在缓冲层上的本征氧化膜和形成在本征氧化膜上的中间氧化膜。 本发明的氧化物膜包括未掺杂的氧化锌，其厚度范围为10〜40nm。 中间氧化膜包括掺杂有铝的半固有氧化锌，其厚度范围为50-150nm。 中间氧化膜的铝浓度小于1000ppm。

公开(公告)号：US20110039366A1

公开(公告)日：2011-02-17

申请号：US12843778

申请日：2010-07-26

Applicant: Bulent M. Basol ,  Mustafa Pinarbasi ,  James Freitag

Inventor： Bulent M. Basol ,  Mustafa Pinarbasi ,  James Freitag

IPC: H01L31/18 ,  H01L31/0264

CPC classification number: H01L31/206 ,  C23C18/12 ,  C23C18/1204 ,  C23C18/125 ,  H01L31/022475 ,  H01L31/022483 ,  H01L31/0322 ,  H01L31/0749 ,  H01L31/1884 ,  Y02E10/541 ,  Y02P70/521

Abstract: In one embodiment, a continuous electroless deposition method and a system to form a solar cell buffer layer with a varying composition through its thickness are provided. The composition of the buffer layer is varied by varying the composition of a chemical bath deposition solution applied onto an absorber surface on which the buffer layer with varying composition is formed. In one example, the buffer layer with varying composition includes a first section containing CdS, a second section containing CdZnS formed on top of the already deposited CdS, and a third section containing ZnS is formed on the second section All the process steps are applied in a roll-to-roll fashion. In another embodiment, a transparent conductive layer including a first transparent conductive film such as aluminum doped zinc oxide and a second transparent conductive film such as indium tin oxide is deposited over the buffer layer with the varying composition.

Abstract translation: 在一个实施例中，提供连续的无电沉积方法和通过其厚度形成具有变化的组成的太阳能电池缓冲层的系统。 通过改变施加到其上形成有不同组成的缓冲层的吸收体表面上的化学浴沉积溶液的组成来改变缓冲层的组成。 在一个实例中，具有不同成分的缓冲层包括含有CdS的第一部分，在已经沉积的CdS的顶部上形成的包含CdZnS的第二部分，在第二部分上形成包含ZnS的第三部分。所有的工艺步骤都应用于 一对一的滚动时尚。 在另一个实施例中，包含第一透明导电膜（例如掺杂铝的氧化锌）和第二透明导电膜（例如氧化铟锡）的透明导电层以不同的组成沉积在缓冲层上。

公开(公告)号：US07837837B2

公开(公告)日：2010-11-23

申请号：US11034351

申请日：2005-01-11

Applicant: Michael Andrew Parker ,  Mustafa Pinarbasi ,  Robert Otto Schwenker

Inventor： Michael Andrew Parker ,  Mustafa Pinarbasi ,  Robert Otto Schwenker

IPC: C23C14/16

CPC classification number: B82Y25/00 ,  G11B5/3133 ,  G11B5/3163 ,  G11B5/3903 ,  G11B5/3967 ,  H01F10/32 ,  Y10T29/49025 ,  Y10T29/49032

Abstract: The present invention is directed towards increasing the conductivity of the electrical lead material in the read head portion of a magnetic head, such that thinner electrical leads can be fabricated while the current carrying capacity of the leads is maintained. This increase in electrical lead conductivity is accomplished by fabricating the electrical lead upon an epitaxially matched seed layer, such that the crystalline microstructure of the electrical lead material has fewer grain boundaries, whereby the electrical conductivity of the lead material is increased. In a preferred embodiment, the electrical lead material is comprised of Rh, which has an FCC crystal structure, and the seed layer is comprised of a metal, or metal alloy having a BCC crystal structure with unit cell lattice constant dimensions that satisfy the relationship that abcc is approximately equal to 0.816afcc. In various embodiments, the seed layer is comprised of VMo or VW.

Abstract translation: 本发明旨在增加磁头的读头部分中的引线材料的导电性，使得可以在保持导线的载流能力的同时制造更薄的电引线。 通过在外延匹配的种子层上制造电引线，使得引线材料的结晶微结构具有更少的晶界，从而提高引线材料的导电性，从而实现电导线导电性的提高。 在优选实施例中，电引线材料由具有FCC晶体结构的Rh组成，并且种子层由具有单位晶格恒定尺寸的具有BCC晶体结构的金属或金属合金构成，满足以下关系： abcc大约等于0.816afcc。 在各种实施方案中，种子层由VMo或VW组成。

公开(公告)号：US20100147677A1

公开(公告)日：2010-06-17

申请号：US12607689

申请日：2009-10-28

Applicant: Mustafa Pinarbasi ,  Homayoun Talieh ,  Bulent M. Basol

Inventor： Mustafa Pinarbasi ,  Homayoun Talieh ,  Bulent M. Basol

IPC: C23C14/34 ,  C23C14/56

CPC classification number: G06F3/1446 ,  B05D3/0493 ,  B05D2252/02 ,  C23C14/562 ,  G06F3/1438 ,  G09F9/30 ,  G09F9/301 ,  G09F9/33 ,  G09G3/2088 ,  G09G3/32 ,  G09G2300/026 ,  G09G2300/0452 ,  G09G2320/0626 ,  G09G2380/02 ,  G09G2380/06 ,  H01L31/03923 ,  H01L31/206 ,  Y02E10/541 ,  Y02P70/521

Abstract: A roll to roll system for depositing a material on a workpiece is provided. In one embodiment, the system includes a drum, which rotates about an axis that is transverse to a process direction, and a number of PVD deposition units. The drum further includes a peripheral surface that includes a groove having a recessed workpiece contact surface that is parallel to the axis and disposed between a first side wall and a second side wall. A portion of the recessed workpiece contact surface supports a section of the workpiece and the first and second side walls maintain the section of the workpiece on the portion of the recessed workpiece contact surface as the workpiece is moved along the process direction. The PVD deposition units are disposed across from some of the portion of the peripheral surface and continuously deposit the material across a width of some of the section of the workpiece.

Abstract translation: 提供了一种用于在工件上沉积材料的卷对卷系统。 在一个实施例中，系统包括围绕横向于工艺方向的轴线旋转的滚筒和多个PVD沉积单元。 滚筒还包括外围表面，该外围表面包括凹槽，凹槽具有凹入的工件接触表面，其平行于轴线并且设置在第一侧壁和第二侧壁之间。 凹陷工件接触表面的一部分支撑工件的一部分，并且随着工件沿着工艺方向移动，第一和第二侧壁将工件的部分保持在凹入工件接触表面的部分上。 PVD沉积单元跨越外围表面的一些部分设置，并且将材料连续地沉积在工件的一些部分的宽度上。

公开(公告)号：US20100140101A1

公开(公告)日：2010-06-10

申请号：US12642702

申请日：2009-12-18

Applicant: Serdar Aksu ,  Mustafa Pinarbasi

Inventor： Serdar Aksu ,  Mustafa Pinarbasi

IPC: C25D7/12

CPC classification number: C25D3/58 ,  C25D3/38 ,  C25D3/54 ,  C25D5/10

Abstract: The present invention provides a method and precursor structure to form a solar cell absorber layer. The method includes electrodepositing a first layer including a film stack including at least a first film comprising copper, a second film comprising indium and a third film comprising gallium, wherein the first layer includes a first amount of copper, electrodepositing a second layer onto the first layer, the second layer including at least one of a second copper-indium-gallium-ternary alloy film, a copper-indium binary alloy film, a copper-gallium binary alloy film and a copper-selenium binary alloy film, wherein the second layer includes a second amount of copper, which is higher than the first amount of copper, and electrodepositing a third layer onto the second layer, the third layer including selenium; and reacting the precursor stack to form an absorber layer on the base.

Abstract translation: 本发明提供一种形成太阳能电池吸收层的方法和前体结构。 该方法包括电沉积包括至少包括铜的第一膜的膜堆叠的第一层，包含铟的第二膜和包含镓的第三膜，其中第一层包括第一量的铜，将第二层电沉积到第一层上 所述第二层包括第二铜铟镓镓三元合金膜，铜铟二元合金膜，铜镓二元合金膜和铜 - 硒二元合金膜中的至少一种，其中所述第二层 包括第二量的铜，其高于第一量的铜，并且将第三层电沉积到第二层上，第三层包括硒; 并使前体叠层反应在基底上形成吸收层。

公开(公告)号：US20090203165A1

公开(公告)日：2009-08-13

申请号：US12233563

申请日：2008-09-18

Applicant: Mustafa Pinarbasi ,  Serdar Aksu ,  Bulent M. Basol

Inventor： Mustafa Pinarbasi ,  Serdar Aksu ,  Bulent M. Basol

IPC: H01L31/0272 ,  H01L31/032

CPC classification number: H01L31/022425 ,  C25D3/56 ,  C25D5/50 ,  H01L31/0322 ,  H01L31/03928 ,  Y02E10/541 ,  Y02P70/521

Abstract: A thin film solar cell including a Group IBIIIAVIA absorber layer on a defect free base including a stainless steel substrate is provided. The stainless steel substrate of the base is surface treated to remove the surface roughness such as protrusions that cause shunts. Before removing the protrusions, a thin protective ruthenium film is first deposited on the recessed surface portions of the substrate to protect these portions during the following protrusion removal. The protrusions on the surface receives very little or no ruthenium during the deposition. After the ruthenium film is formed, the protrusions are etched and removed by an etchant which only attacks the stainless steel but neutral to the ruthenium film. A contact layer is formed over the ruthenium layer and the exposed portions of the substrate to complete the base.

Abstract translation: 提供一种薄膜太阳能电池，其包括在包括不锈钢基底的无缺陷基底上的IBIIIAVIA族吸收层。 对基体的不锈钢基材进行表面处理以去除表面粗糙度，例如引起分流的凸起。 在移除突起之前，首先将薄的保护性钌膜沉积在基底的凹入表面部分上，以在随后的突起移除期间保护这些部分。 在沉积过程中，表面上的突起很少或没有钌。 在形成钌膜之后，通过蚀刻剂蚀刻并除去突起，蚀刻剂仅侵蚀不锈钢，但对钌膜是中性的。 在钌层和基板的暴露部分之上形成接触层以完成基底。

公开(公告)号：US20070127167A1

公开(公告)日：2007-06-07

申请号：US11297151

申请日：2005-12-07

Applicant: James Freitag ,  Kuok Ho ,  Mustafa Pinarbasi ,  Ching Tsang

Inventor： James Freitag ,  Kuok Ho ,  Mustafa Pinarbasi ,  Ching Tsang

IPC: G11B5/33 ,  G11B5/127

CPC classification number: B82Y25/00 ,  G01R33/093 ,  G11B5/3163 ,  G11B5/3906 ,  G11B5/398

Abstract: A magnetoresistive sensor having a lead overlay defined trackwidth and a pinned layer that extends beyond the stripe height defined by the free layer of the sensor. The extended pinned layer has a strong shape induced anisotropy that maintains pinning of the pinned layer moment. The extended portion of the pinned layer has sides beyond the stripe height that are perfectly aligned with the sides of the sensor within the stripe height. This perfect alignment is made possible by a manufacturing method that uses a mask structure for more than one manufacturing phase, eliminating the need for multiple mask alignments. The lead overlay design allows narrow, accurate trackwidth definition.

Abstract translation: 磁阻传感器具有引线覆盖层限定的轨道宽度和延伸超过由传感器的自由层限定的条带高度的钉扎层。 延伸的钉扎层具有强烈的形状诱导的各向异性，保持钉扎层力矩的钉扎。 被钉扎层的延伸部分具有超过条带高度的侧面，其在条纹高度内完全与传感器的侧面对准。 通过使用掩模结构用于多于一个制造阶段的制造方法，可以实现这种完美的对准，从而消除了对多个掩模对准的需要。 引线覆盖设计允许窄的，准确的轨道宽度定义。