摘要:
A semiconductor device includes: a first semiconductor layer of a first conductivity type; a second semiconductor layer of a second conductivity type on the first semiconductor layer; trenches in the first semiconductor layer; a semiconductor protruding part on the first semiconductor layer; a third semiconductor layer on the semiconductor protruding part; a fourth semiconductor layer on the third semiconductor layer; a gate insulating layer disposed along the trench; a first interlayer insulating layer disposed along the trench; a first conductive layer facing to the fourth semiconductor layer; a second conductive layer on the first interlayer insulating layer; a second interlayer insulating layer covering the second conductive layer; a third conductive layer on the third semiconductor layer and fourth semiconductor layer; a contacting part connecting the third conductive layer and third semiconductor layer; and a fourth conductive layer formed on the second semiconductor layer.
摘要:
A capacitor module in which the structure of a connecting portion is highly resistant against vibration and has a low inductance. The capacitor module includes a plurality of capacitors and a laminate made up of a first wide conductor and a second wide conductor joined in a layered form with an insulation sheet interposed between the first and second wide conductors. The laminate comprises a first flat portion including the plurality of capacitors which are supported thereon and electrically connected thereto, a second flat portion continuously extending from the first flat portion while being bent, and connecting portions formed at ends of the first flat portion and the second flat portion and electrically connected to the exterior.
摘要:
In a manufacturing method of a SOI type high withstand voltage semiconductor device formed on a support substrate via an insulation film, a small-sized semiconductor device having small dispersion of withstand voltage is manufactured by introducing impurities into the whole surface of a p-type or n-type SOI substrate having an impurity concentration of 2E14 cm−3 or less and serving as an active layer of the semiconductor device with an ion implantation method and thereby forming a drift layer.
摘要:
A power module includes an upper arm circuit unit and a lower arm circuit unit each having a power semiconductor element; an insulating substrate with the units mounted on one surface thereof; a metal base bonded onto the other surface of the substrate opposite to the one surface where the units are mounted; a first connection conductor for supplying a high potential to the upper unit from outside; a second connection conductor for supplying a low potential to the lower unit from outside; an insulating sheet interposed between the conductors; and a resin case disposed on the metal base to support the conductors, the conductors are flat conductors and laminated with the sheet sandwiched therebetween; the sheet extends from one end of the laminated structure to secure the creepage distance between the conductors; and the case is furnished with a recess for containing the laminated structure.
摘要:
An integrated circuit for driving a semiconductor device, which is adaptable for demands, such as a higher output (larger current), a higher voltage, and a smaller loss, and has a small size, is produced at a low cost, and has high reliability. A power converter including such an integrated circuit is also provided. Circuit elements constituting a drive section of an upper arm drive circuit 212, a level shift circuit 20 including a current sensing circuit 210, a drive section of a lower arm drive circuit 222, and a drive signal processing circuit 224 are integrated and built in one high withstand voltage IC chip 200. Circuit elements constituting a final output stage buffer section 213 of the upper arm drive circuit 212 are built in a vertical p-channel MOS-FET chip 213p and a vertical n-channel MOS-FET chip 213n. Circuit elements constituting a final output stage buffer section 223 of the lower arm drive circuit 222 are built in a vertical p-channel MOS-FET chip 223p and a vertical n-channel MOS-FET chip 223n. Thus, a driver IC 2 is fabricated.
摘要:
A plasma display device of the present invention having a plurality of display cells, comprises a X electrode kept at a reference voltage, a Y electrode, an address electrode, the X electrode and the Y electrode between which sustain discharge occurs, and an address driver comprising a first switch element Q2 for outputting a low level voltage, a second switch element Q1 for outputting a high level voltage, whose withstand voltage of the second switch element is lower than the first switch element, and a diode inserted and connected between the address electrode and the second switch element.
摘要:
The present invention provides a power module, power converter, and vehicular electric machine system capable of reducing inductance of a peripheral section of an output terminal in a power module, and additionally, reducing a surge voltage. A positive emitter conductor 3 connected to an emitter electrode of a positive power semiconductor element Mpu and an output terminal U are electrically interconnected by using a plurality of aluminum wires 7, a negative collector conductor 4 connected to a collector electrode of a negative power semiconductor element Mnu and the output terminal U are electrically interconnected by using a plurality of aluminum wires 9, and the positive emitter conductor 3 connected to the emitter electrode of the positive power semiconductor element Mpu and the negative collector conductor 4 connected to the collector electrode of the negative power semiconductor element Mnu are further electrically interconnected by using a plurality of aluminum wires 8.
摘要:
A plasma display apparatus having a plurality of display cells for prolonging the luminous brightness lifetime in the single-sided drive mode has a first sustaining electrode, a second sustaining electrode connected to reference potential and cooperating with the first sustaining electrode to perform sustain discharge through a discharge space of a display cell, and an address electrode, an electrical capacitance set up between the second sustaining electrode and the discharge space is larger than that set up between the first sustaining electrode and the discharge space.
摘要:
The present invention provides a highly reliable electric power converter reduced in parasitic inductance.An electric power converter that includes a capacitor module which has a DC terminal, an inverter which coverts a direct current into an alternating current, and heat release fins which cool the inverter, is constructed so that: the inverter has a power module including a plurality of power semiconductor elements; the power module further has a metallic base, a dielectric substrate provided on one face of the metallic base, a power semiconductor element fixed to the dielectric substrate, and a DC terminal; the metallic base has the heat release fins on the other face; the DC terminal in the power module and the DC terminal in the capacitor module are each formed by stacking flat plate conductors via an insulator; the two positive and negative DC terminals have respective front ends bent in opposite directions; a plane including the bent sections is used as a surface for connecting the power module and the capacitor module; and the insulators overlap each other at the connection surface.
摘要:
Disclosed is an engine driving system having a cell suitable for restarting an engine, wherein an engine is stopped at the time of stopping running of a vehicle and the engine is restarted at the time of starting running of the vehicle, there are provided an engine electronic control device for controlling the engine, a motor for restarting the engine and a cell for supplying an electrical power to the motor; the cell comprises an anode plate formed into a thin band-shape, a cathode plate formed into a thin band-shape and a band-like separator arranged between the anode plate and the cathode plate; and the anode plate, the cathode plate and the separator form a group of wound pole plates and the group of pole plates is immersed in electrolysis solution.