Method for fabricating a non-volatile memory device
    1.
    发明授权
    Method for fabricating a non-volatile memory device 失效
    用于制造非易失性存储器件的方法

    公开(公告)号:US08377782B2

    公开(公告)日:2013-02-19

    申请号:US13338048

    申请日:2011-12-27

    IPC分类号: H01L29/72

    摘要: A method for fabricating a non-volatile memory device with asymmetric source/drain junctions, wherein a gate stack is formed on a semiconductor substrate, and impurity ions are implanted at a predetermined angle to form a source/drain junction in the semiconductor substrate. Thermal treatment of the semiconductor substrate forms an asymmetrically disposed source/drain junction between adjacent gate stacks.

    摘要翻译: 一种用于制造具有不对称源极/漏极结的非易失性存储器件的方法,其中在半导体衬底上形成栅极堆叠,并且以预定角度注入杂质离子以在半导体衬底中形成源极/漏极结。 半导体衬底的热处理在相邻栅极叠层之间形成不对称设置的源极/漏极结。

    Non-Volatile Memory Device Having Asymmetric Source/Drain Junction and Method for Fabricating the Same
    2.
    发明申请
    Non-Volatile Memory Device Having Asymmetric Source/Drain Junction and Method for Fabricating the Same 失效
    具有不对称源极/漏极结的非易失性存储器件及其制造方法

    公开(公告)号:US20090096011A1

    公开(公告)日:2009-04-16

    申请号:US12132386

    申请日:2008-06-03

    IPC分类号: H01L29/00 H01L21/336

    摘要: Disclosed herein are non-volatile memory devices with asymmetric source/drain junctions and a method for fabricating the same. According to the method, a gate stack is formed on a semiconductor substrate, and impurity ions are implanted at a predetermined angle to form a source/drain junction in the semiconductor substrate. Thermal treatment of the semiconductor substrate forms an asymmetrically disposed source/drain junction between adjacent gate stacks.

    摘要翻译: 本文公开了具有不对称源极/漏极结的非易失性存储器件及其制造方法。 根据该方法,在半导体衬底上形成栅极堆叠,并且以预定角度注入杂质离子,以在半导体衬底中形成源极/漏极结。 半导体衬底的热处理在相邻栅极叠层之间形成不对称设置的源极/漏极结。

    SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME
    3.
    发明申请
    SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME 审中-公开
    半导体存储器件及其制造方法

    公开(公告)号:US20140043905A1

    公开(公告)日:2014-02-13

    申请号:US13605243

    申请日:2012-09-06

    申请人: Myung Shik LEE

    发明人: Myung Shik LEE

    IPC分类号: H01L21/28 G11C16/04

    摘要: A semiconductor memory device includes a memory cell block formed over a first memory cell region and a second memory cell region defined on a semiconductor substrate, and a voltage supply circuit configured to apply an operating voltage to gate lines of a plurality of memory cells included in the memory cell block, wherein a first air gap disposed between the gate lines in the first memory cell region has a smaller size than a second air gap disposed between the gate lines in the second memory cell region.

    摘要翻译: 半导体存储器件包括形成在第一存储单元区域上的存储单元块和限定在半导体衬底上的第二存储单元区域,以及电压供给电路,被配置为向包括在多个存储单元区域中的多个存储单元的栅极线施加工作电压 存储单元块,其中设置在第一存储单元区域中的栅极线之间的第一气隙具有比设置在第二存储单元区域中的栅极线之间的第二气隙更小的尺寸。

    Method of manufacturing nonvolatile memory device
    4.
    发明授权
    Method of manufacturing nonvolatile memory device 失效
    制造非易失性存储器件的方法

    公开(公告)号:US08093124B2

    公开(公告)日:2012-01-10

    申请号:US12954321

    申请日:2010-11-24

    IPC分类号: H01L21/225

    CPC分类号: H01L27/11521

    摘要: A method of manufacturing a nonvolatile memory device includes forming a tunnel insulating layer over a semiconductor substrate, forming a charge trap layer, including first impurity ions of a first concentration, over the tunnel insulating layer, forming a compensation layer, including second impurity ions of a second concentration, over the charge trap layer, diffusing the second impurity ions within the compensation layer toward the charge trap layer, removing the compensation layer, forming a dielectric layer on surfaces of the charge trap layer, and forming a conductive layer for a control gate on the dielectric layer.

    摘要翻译: 一种制造非易失性存储器件的方法包括在半导体衬底上形成隧道绝缘层,在隧道绝缘层上形成包括第一浓度的第一杂质离子的电荷捕获层,形成补偿层,包括第二杂质离子 第二浓度,在电荷陷阱层上方,将补偿层内的第二杂质离子扩散到电荷陷阱层,去除补偿层,在电荷陷阱层的表面上形成电介质层,以及形成用于控制的导电层 电介质层上的栅极。

    Non-volatile memory device having asymmetric source/drain junction and method for fabricating the same
    6.
    发明授权
    Non-volatile memory device having asymmetric source/drain junction and method for fabricating the same 失效
    具有不对称源极/漏极结的非易失性存储器件及其制造方法

    公开(公告)号:US08110866B2

    公开(公告)日:2012-02-07

    申请号:US12132386

    申请日:2008-06-03

    IPC分类号: H01L29/72

    摘要: Disclosed herein are non-volatile memory devices with asymmetric source/drain junctions and a method for fabricating the same. According to the method, a gate stack is formed on a semiconductor substrate, and impurity ions are implanted at a predetermined angle to form a source/drain junction in the semiconductor substrate. Thermal treatment of the semiconductor substrate forms an asymmetrically disposed source/drain junction between adjacent gate stacks.

    摘要翻译: 本文公开了具有不对称源极/漏极结的非易失性存储器件及其制造方法。 根据该方法,在半导体衬底上形成栅极堆叠,并且以预定角度注入杂质离子,以在半导体衬底中形成源极/漏极结。 半导体衬底的热处理在相邻栅极叠层之间形成不对称设置的源极/漏极结。

    METHOD OF MANUFACTURING NONVOLATILE MEMORY DEVICE
    7.
    发明申请
    METHOD OF MANUFACTURING NONVOLATILE MEMORY DEVICE 失效
    制造非易失性存储器件的方法

    公开(公告)号:US20110207287A1

    公开(公告)日:2011-08-25

    申请号:US12954321

    申请日:2010-11-24

    IPC分类号: H01L21/762

    CPC分类号: H01L27/11521

    摘要: A method of manufacturing a nonvolatile memory device includes forming a tunnel insulating layer over a semiconductor substrate, forming a charge trap layer, including first impurity ions of a first concentration, over the tunnel insulating layer, forming a compensation layer, including second impurity ions of a second concentration, over the charge trap layer, diffusing the second impurity ions within the compensation layer toward the charge trap layer, removing the compensation layer, forming a dielectric layer on surfaces of the charge trap layer, and forming a conductive layer for a control gate on the dielectric layer.

    摘要翻译: 一种制造非易失性存储器件的方法包括在半导体衬底上形成隧道绝缘层,在隧道绝缘层上形成包括第一浓度的第一杂质离子的电荷捕获层,形成补偿层,包括第二杂质离子 第二浓度,在电荷陷阱层上方,将补偿层内的第二杂质离子扩散到电荷陷阱层,去除补偿层,在电荷陷阱层的表面上形成电介质层,以及形成用于控制的导电层 电介质层上的栅极。

    Method for Fabricating a Non-volatile Memory Device
    10.
    发明申请
    Method for Fabricating a Non-volatile Memory Device 失效
    制造非易失性存储器件的方法

    公开(公告)号:US20120094451A1

    公开(公告)日:2012-04-19

    申请号:US13338048

    申请日:2011-12-27

    IPC分类号: H01L21/8239

    摘要: A method for fabricating a non-volatile memory device with asymmetric source/drain junctions, wherein a gate stack is formed on a semiconductor substrate, and impurity ions are implanted at a predetermined angle to form a source/drain junction in the semiconductor substrate. Thermal treatment of the semiconductor substrate forms an asymmetrically disposed source/drain junction between adjacent gate stacks.

    摘要翻译: 一种用于制造具有不对称源极/漏极结的非易失性存储器件的方法,其中在半导体衬底上形成栅极堆叠,并且以预定角度注入杂质离子以在半导体衬底中形成源极/漏极结。 半导体衬底的热处理在相邻栅极叠层之间形成不对称设置的源极/漏极结。