公开(公告)号：US11955311B2

公开(公告)日：2024-04-09

申请号：US17835875

申请日：2022-06-08

Applicant: NISSIN ION EQUIPMENT CO., LTD.

Inventor： Shinya Takemura

IPC: H01J37/08 ,  G06N20/00 ,  H01J37/304 ,  H01J37/305 ,  H01J37/317

CPC classification number: H01J37/3056 ,  G06N20/00 ,  H01J37/08 ,  H01J37/304 ,  H01J37/3171

Abstract: An ion beam irradiation apparatus includes modules for generating an ion beam according to a recipe, and a control device. The control device receives the recipe including a processing condition for new processing, reads, from a monitored value storage, a monitored value that indicates a state of a module during a last processing immediately before the new processing, inputs the processing condition and the monitored value to a trained machine learning algorithm and receives, as an output from the trained machine learning algorithm, an initial value for the module, and outputs the initial value to the module to set up the module for generating the ion beam.

公开(公告)号：US11929266B2

公开(公告)日：2024-03-12

申请号：US17680943

申请日：2022-02-25

Applicant: NISSIN ION EQUIPMENT CO., LTD.

Inventor： Takashi Sakamoto

IPC: H01L21/00 ,  H01J37/05 ,  H01J37/20 ,  H01J37/317 ,  H01L21/67 ,  H01L21/683

CPC classification number: H01L21/67103 ,  H01J37/05 ,  H01J37/20 ,  H01J37/3171 ,  H01L21/6833 ,  H01J2237/2007 ,  H01J2237/20235

Abstract: A wafer support device includes a support base having a wafer-facing surface, the support base comprising a heater, and an electrostatic chuck supported by the support base, the electrostatic chuck having an attraction surface configured to attract a wafer for wafer processing. During the wafer processing, the wafer-facing surface and the attraction surface are positioned at respective different positions in a direction perpendicular to the wafer-facing surface so that the attraction surface is separated from the wafer-facing surface by a distance.

公开(公告)号：US20240038499A1

公开(公告)日：2024-02-01

申请号：US18361160

申请日：2023-07-28

Applicant: Nissin Ion Equipment Co., Ltd.

Inventor： Yuta IWANAMI ,  Yuya HIRAI ,  Suguru ITOI ,  Weijiang ZHAO

IPC: H01J37/32 ,  C23C14/48

CPC classification number: H01J37/32412 ,  H01J37/3244 ,  H01J37/32724 ,  C23C14/48

Abstract: An ion source includes a vaporizer, a plasma chamber, and a controller. The vaporizer produces a reaction product by supplying, through a first gas supply line to a crucible in which a solid material is installed, a reactive gas that reacts with the solid material, and vaporizes the reaction product by heating the crucible with a heater. The plasma chamber is supplied with a vapor from the vaporizer through a vapor supply line, and has a second gas supply line connected to the plasma chamber separately from the vapor supply line. The controller controls the heater to heat the crucible while a gas is being supplied from the second gas supply line to the plasma chamber and stops a supply of the reactive gas through the first gas supply line to the crucible.

公开(公告)号：US20200312651A1

公开(公告)日：2020-10-01

申请号：US16815048

申请日：2020-03-11

Applicant: Nissin Ion Equipment Co., Ltd.

Inventor： Daiki Takashima ,  Ippei Nishimura

IPC: H01J49/30 ,  H01J49/02

Abstract: Provided is a mass separator (100) for performing mass separation for an ion beam (IB). The mass separator (100) includes a transfer structure (30) that is a component of a yoke (13) and move at least one of an upper yoke (13a) positioned over the beam path (L), a lower yoke (13b) positioned under the beam path (L), and a side yoke (13c, 13d) positioned at a side of the beam path (L) between a normal position (P) in the traveling of the ion beam (IB) and a retracted position (Q) that does not overlap with at least a part of the normal position (P); the yoke (13) is surrounding the beam path (L) and is made of a magnetic body.

公开(公告)号：US10784075B2

公开(公告)日：2020-09-22

申请号：US16655012

申请日：2019-10-16

Applicant: NISSIN ION EQUIPMENT CO., LTD.

Inventor： Shinya Hisada ,  Kohei Tanaka ,  Shigehisa Tamura ,  Makoto Nakaya

IPC: H01J37/36 ,  H01J37/20 ,  H01J37/18

Abstract: An apparatus provided with a wafer processing chamber that houses a wafer supporting mechanism supporting a wafer and is used to irradiate the wafer supported by the wafer supporting mechanism with an ion beam and a transport mechanism housing chamber that houses a transport mechanism provided underneath the wafer processing chamber and used for moving the wafer supporting mechanism in a substantially horizontal direction, wherein an aperture used for moving the wafer supporting mechanism along with a coupling member coupling the wafer supporting mechanism to the transport mechanism is formed in the direction of movement of the transport mechanism in a partition wall separating the wafer processing chamber from the transport mechanism housing chamber.

公开(公告)号：US10600608B1

公开(公告)日：2020-03-24

申请号：US16353475

申请日：2019-03-14

Applicant: Nissin Ion Equipment Co., Ltd.

Inventor： Masakazu Adachi ,  Shigeki Sakai ,  Yuya Hirai ,  Takayuki Murayama ,  Tomoya Taniguchi ,  Weijiang Zhao

IPC: H01J7/24 ,  H05B31/26 ,  H01J27/02

Abstract: An ion source is provided. The ion source includes a plasma generation chamber, a plate member, and an extraction electrode. The plasma generation chamber is supplied with a halogen-containing material. The plate member is provided on an end of the plasma generation chamber located on a side toward which an ion beam is extracted. The extraction electrode is disposed downstream of the plate member. The plate member is formed with a gas supply passage via which hydrogen gas is supplied to the extraction electrode.

公开(公告)号：US10222400B2

公开(公告)日：2019-03-05

申请号：US15271854

申请日：2016-09-21

Applicant: NISSIN ION EQUIPMENT CO., LTD.

Inventor： Hideyasu Une ,  Tetsuro Yamamoto ,  Yoshihiro Takigami

IPC: G01R15/24 ,  G01R19/00 ,  H01J25/12

Abstract: A beam current measuring device capable of performing measurement of a beam current distribution of a charged particle beam seamlessly and continuously in an arbitrary direction is provided. The beam current measuring device includes collector electrodes whose detection regions seamlessly continue in an arrangement direction thereof.

公开(公告)号：US10199201B2

公开(公告)日：2019-02-05

申请号：US15902009

申请日：2018-02-22

Applicant: NISSIN ION EQUIPMENT CO., LTD.

Inventor： Hideki Fujita ,  Suguru Itoi

IPC: H05B31/26 ,  H01J37/317 ,  H01J37/32

Abstract: A plasma source is provided. The plasma source includes a chamber body, a supply passage, a vacuum connector, an antenna, a first insulator, a second insulator, and a conductor. The chamber body has an opening for emitting ions or electrons. The supply passage penetrates through a first peripheral wall of the chamber body. The vacuum connector is provided in a second peripheral wall of the chamber body at a position opposed to the opening. The antenna has a base end connected to the vacuum connector, and extends inside the chamber body toward the opening. The first insulator covers a first region of the antenna at a distal end of the antenna inside the chamber body. The second insulator covers a second region of the antenna at the base end of the antenna inside the chamber body. The conductor covers the second insulator.

公开(公告)号：US10109509B2

公开(公告)日：2018-10-23

申请号：US15667348

申请日：2017-08-02

Applicant: NISSIN ION EQUIPMENT CO., LTD.

Inventor： Kunifumi Takaoka

IPC: H01L21/425 ,  H01L21/67 ,  H01L21/677 ,  H01L21/683

Abstract: A semiconductor manufacturing apparatus, which is provided with a first storage chamber that stores a substrate to be processed, a second storage chamber that stores a dummy substrate, a substrate support apparatus with a heating function that supports a substrate, and a substrate transport apparatus that transports the substrates between the storage chambers and the substrate support apparatus, is further provided with a controller which, in the event that the temperature of substrate processing in a preceding substrate processing step is higher than the temperature of substrate processing in a subsequent substrate processing step, operates the substrate transport apparatus to transport the dummy substrate, whose temperature is lower than the temperature of substrate processing in the preceding substrate processing step, prior to carrying out the subsequent substrate processing step.

公开(公告)号：US20180138008A1

公开(公告)日：2018-05-17

申请号：US15795586

申请日：2017-10-27

Applicant: Nissin Ion Equipment Co., Ltd.

Inventor： Sami K. Hahto ,  George Sacco

IPC: H01J37/08 ,  H01J37/317 ,  H01J37/05

CPC classification number: H01J37/08 ,  H01J27/024 ,  H01J37/05 ,  H01J37/3171 ,  H01J2237/057 ,  H01J2237/06375 ,  H01J2237/08 ,  H01J2237/082 ,  H01J2237/14

Abstract: An ion source is provided that includes a gas source for supplying a gas, and an ionization chamber defining a longitudinal axis extending therethrough and including an exit aperture along a side wall of the ionization chamber. The ion source also includes one or more extraction electrodes at the exit aperture of the ionization chamber for extracting ions from the ionization chamber in the form of an ion beam. At least one of the extraction electrodes comprises a set of discrete rods forming a plurality of slits in the at least one extraction electrode for enabling at least one of increasing a current of the ion beam or controlling an angle of extraction of the ion beam from the ionization chamber. Each rod in the set of discrete rods is parallel to the longitudinal axis of the ionization chamber.