公开(公告)号：US5352907A

公开(公告)日：1994-10-04

申请号：US856509

申请日：1992-03-24

申请人： Kunihiro Matsuda ,  Hiromitsu Ishii ,  Naohiro Konya

发明人： Kunihiro Matsuda ,  Hiromitsu Ishii ,  Naohiro Konya

IPC分类号： H01L21/336 ,  H01L29/49 ,  H01L29/786 ,  H01L27/01 ,  H01L27/13 ,  H01L29/78

CPC分类号： H01L29/66765 ,  H01L27/124 ,  H01L29/4908 ,  H01L29/78618 ,  H01L29/78636 ,  H01L29/78669

摘要： A thin-film transistor includes a gate electrode and a semiconductor film consisting of amorphous silicon, formed on an insulating substrate to oppose each other through a gate insulating film, ohmic contact layers composed of n-type amorphous silicon doped with an impurity, electrically insulated from each other on the semiconductor film, and electrically connected to the semiconductor film, and source and drain electrodes arranged on the semiconductor film with a predetermined gap to form a channel portion, and electrically connected to the semiconductor film through the ohmic contact layers. The gate electrode and a portion surrounding the gate electrode are entirely formed into a continuous metal oxide film by a chemical reaction.

摘要翻译： 薄膜晶体管包括栅极电极和由非晶硅组成的半导体膜，其形成在绝缘基板上，通过栅极绝缘膜彼此相对，由掺杂有杂质的n型非晶硅构成的欧姆接触层，电绝缘 在半导体膜上彼此电连接并且与半导体膜电连接，并且以预定间隙布置在半导体膜上的源电极和漏电极以形成沟道部分，并且通过欧姆接触层电连接到半导体膜。 栅电极和围绕栅电极的部分通过化学反应完全形成为连续的金属氧化物膜。

公开(公告)号：US5196912A

公开(公告)日：1993-03-23

申请号：US668741

申请日：1991-03-13

申请人： Hiroshi Matsumoto ,  Hiroyasu Yamada ,  Nobuyuki Yamamura ,  Shinichi Shimomaki ,  Naohiro Konya ,  Kyuya Baba

发明人： Hiroshi Matsumoto ,  Hiroyasu Yamada ,  Nobuyuki Yamamura ,  Shinichi Shimomaki ,  Naohiro Konya ,  Kyuya Baba

IPC分类号： H01L27/115 ,  H01L29/792

CPC分类号： H01L27/115 ,  H01L29/792

摘要： A memory element is formed of a thin film transistor. The thin film transistor has a semiconductor layer, a source electrode electrically connected to the semiconductor layer, a drain electrode electrically connected to the semiconductor layer and formed separately from the source electrode, a gate electrode for controlling formation of a channel of the semiconductor layer, and a gate insulation film for isolating the gate electrode and the semiconductor layer from each other and causing a hysteresis in the relation between the drain current and the gate circuit. The insulation film is a silicon nitride film whose composition ratio of silicon to nitrogen is in a range of approx. 0.85 to 1.1. According to this invention, the relation between the gate voltage and the drain current can be set to have a hysteresis. Therefore, the thin film transistor can be used as a memory element. Further, according to this invention, data can be written, erased and read out by selectively applying an electric field to the gate insulation film. Therefore, the thin film transistor can be used as a memory element.

摘要翻译： 存储元件由薄膜晶体管形成。 薄膜晶体管具有半导体层，与半导体层电连接的源电极，与半导体层电连接并与源极分开形成的漏电极，用于控制半导体层的沟道的形成的栅电极， 以及用于将栅极电极和半导体层彼此隔离并且在漏极电流和栅极电路之间的关系中产生滞后的栅极绝缘膜。 绝缘膜是硅与氮的组成比在大约的范围内的氮化硅膜。 0.85〜1.1。 根据本发明，可以将栅极电压和漏极电流之间的关系设定为滞后。 因此，薄膜晶体管可以用作存储元件。 此外，根据本发明，可以通过选择性地向栅极绝缘膜施加电场来写入，擦除和读出数据。 因此，薄膜晶体管可以用作存储元件。

公开(公告)号：US5422293A

公开(公告)日：1995-06-06

申请号：US993036

申请日：1992-12-18

申请人： Naohiro Konya

发明人： Naohiro Konya

IPC分类号： G02F1/1362 ,  H01L21/77 ,  H01L21/84 ,  H01L21/98

CPC分类号： G02F1/136286 ,  H01L27/1214 ,  G02F1/136213 ,  Y10S148/117

摘要： A TFT panel is manufactured by a process of forming an oxide voltage-apply lines, gate lines, and capacitor lines on an insulating substrate, and a process of forming thin-film transistors, pixel electrodes, data lines, and ground lines. In a state that one end of the gate line and both ends of the capacitor line are connected to the oxide voltage-apply line, oxide films are formed on the surfaces of the gate line and the capacitor line by anodization. After forming the oxide film, the gate line and the capacitor line are electrically separated from the oxide voltage-apply line.

摘要翻译： 通过在绝缘基板上形成氧化物电压施加线，栅极线和电容线的工艺，以及形成薄膜晶体管，像素电极，数据线和接地线的工艺来制造TFT面板。 在栅极线的一端和电容线的两端连接到氧化物电压施加线的状态下，通过阳极氧化在栅极线和电容器线的表面上形成氧化物膜。 在形成氧化物膜之后，栅极线和电容器线与氧化物电压施加线电隔离。

公开(公告)号：US5243202A

公开(公告)日：1993-09-07

申请号：US4641

申请日：1993-01-12

申请人： Hisatoshi Mori ,  Syunichi Sato ,  Naohiro Konya ,  Ichiro Ohno ,  Hiromitsu Ishii ,  Kunihiro Matsuda

发明人： Hisatoshi Mori ,  Syunichi Sato ,  Naohiro Konya ,  Ichiro Ohno ,  Hiromitsu Ishii ,  Kunihiro Matsuda

IPC分类号： H01L21/316 ,  H01L21/318 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L29/49 ,  H01L29/786

CPC分类号： H01L21/0217 ,  H01L21/02164 ,  H01L21/02183 ,  H01L21/022 ,  H01L21/02211 ,  H01L21/02266 ,  H01L21/02274 ,  H01L21/31612 ,  H01L21/3185 ,  H01L27/1214 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78663

摘要： A thin-film transistor comprises a gate electrode formed on a glass substrate, a gate insulating film formed essentially over an entire surface of the substrate to cover the gate electrode, a non-single-crystal silicon semiconductor film placed on the gate insulating film to cover the gate electrode; and a drain electrode and a source electrode spaced a specified distance apart on the semiconductor film and electrically connected to the semiconductor film so as to form the channel region of the transistor. The gate electrode is made of titanium-containing aluminum.

摘要翻译： 薄膜晶体管包括形成在玻璃基板上的栅极电极，基本上在基板的整个表面上形成以覆盖栅电极的栅极绝缘膜，将栅极绝缘膜上的非单晶硅半导体膜， 覆盖栅电极; 以及在半导体膜上间隔规定距离并与半导体膜电连接的漏电极和源电极，以形成晶体管的沟道区。 栅电极由含钛的铝制成。

公开(公告)号：US5436182A

公开(公告)日：1995-07-25

申请号：US63000

申请日：1993-05-17

申请人： Naohiro Konya ,  Makoto Sasaki

发明人： Naohiro Konya ,  Makoto Sasaki

IPC分类号： G02F1/1343 ,  G02F1/136 ,  G02F1/1362 ,  G02F1/1368 ,  H01L27/12 ,  H01L29/78 ,  H01L29/786 ,  H01L21/86

CPC分类号： H01L27/12 ,  G02F1/1368 ,  G02F2001/136263 ,  Y10S148/105

摘要： A thin-film transistor panel is constituted by forming, on an insulating substrate, a plurality of thin-film transistors, a plurality of gate lines for each connecting gate electrodes of the thin-film transistors, and a plurality of pixel electrodes formed of a transparent conductive film connected to the thin-film transistors, then forming a low-resistance metal film of an Al or Al alloy for a data line and a surface metal film of Cr with a high density, forming a photoresist film of a predetermined pattern on the surface metal film, and etching the data line metal film and surface metal film. Then, the surface metal film remaining on the data line metal film is eliminated.

摘要翻译： 薄膜晶体管板是通过在绝缘基板上形成多个薄膜晶体管，每个连接薄膜晶体管的栅极电极的栅极线以及由多个薄膜晶体管形成的多个像素电极构成的， 透明导电膜连接到薄膜晶体管，然后以高密度形成用于数据线的Al或Al合金的低电阻金属膜和Cr的表面金属膜，形成预定图案的光致抗蚀剂膜 表面金属膜，并蚀刻数据线金属膜和表面金属膜。 然后，除去残留在数据线金属膜上的表面金属膜。

公开(公告)号：US5367179A

公开(公告)日：1994-11-22

申请号：US975282

申请日：1992-11-12

申请人： Hisatoshi Mori ,  Syunichi Sato ,  Naohiro Konya ,  Ichiro Ohno ,  Hiromitsu Ishii ,  Kunihiro Matsuda ,  Junji Shiota

发明人： Hisatoshi Mori ,  Syunichi Sato ,  Naohiro Konya ,  Ichiro Ohno ,  Hiromitsu Ishii ,  Kunihiro Matsuda ,  Junji Shiota

IPC分类号： H01L21/316 ,  H01L21/318 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L29/49 ,  H01L29/786 ,  H01L23/48

CPC分类号： H01L21/0217 ,  H01L21/02274 ,  H01L21/31612 ,  H01L21/3185 ,  H01L27/1214 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78663

摘要： A thin-film transistor comprises a gate electrode formed on an insulating substrate, a gate insulating film covering the gate electrode and the insulating substrate, an i-type semiconductor layer formed on the gate insulating film, and a source electrode and a drain electrode electrically connected to two ends of the i-type semiconductor layer, respectively. The gate electrode is made of aluminum alloy containing high-melting-point metal such as Ti and Ta and oxygen or nitrogen or both.

摘要翻译： 薄膜晶体管包括形成在绝缘基板上的栅极电极，覆盖栅极电极和绝缘基板的栅极绝缘膜，形成在栅极绝缘膜上的i型半导体层，以及电极和漏极电极 分别连接到i型半导体层的两端。 栅电极由含有Ti和Ta等高熔点金属和氧或氮的铝合金构成。

公开(公告)号：US5284789A

公开(公告)日：1994-02-08

申请号：US690816

申请日：1991-04-23

申请人： Hisatoshi Mori ,  Syunichi Sato ,  Naohiro Konya

发明人： Hisatoshi Mori ,  Syunichi Sato ,  Naohiro Konya

IPC分类号： H01L21/316 ,  H01L21/318 ,  H01L21/336 ,  H01L21/84 ,  H01L21/00 ,  H01L21/02 ,  H01L21/326

CPC分类号： H01L29/66757 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/31612 ,  H01L21/3185 ,  H01L21/84 ,  H01L29/66765

摘要： Method of forming a thin film consisting of a silicon-based material includes a first step of setting a substrate subjected to formation of a thin insulating film consisting of the silicon-based material in a chamber having high-frequency electrodes for receiving a high-frequency power while the substrate is kept heated at a predetermined temperature, a second step of supplying a process gas to the chamber, a third step of applying a high-frequency power to the high-frequency electrodes to generate a plasma, a fourth step of depositing an insulator consisting of the silicon-based material on the substrate to a predetermined thickness while gas supply in the second step and supply of the high-frequency power in the third step are kept maintained, and a fifth step of cooling the substrate on which the insulating film is formed and unloading the substrate from the chamber. In the fourth step, the substrate is kept heated within the temperature range of 230.degree. C. to 270.degree. C., and the high-frequency power is controlled to be supplied so that an RF discharge power density falls within the range of 60 to 100 mW/cm.sup.2.

摘要翻译： 形成由硅系材料构成的薄膜的方法包括：将具有由硅系材料构成的薄绝缘膜的基板设定在具有高频电极的室内的第一工序， 在将衬底保持加热到预定温度的第二步骤中，向腔室供给处理气体的第二步骤，向高频电极施加高频电力以产生等离子体的第三步骤;第四步骤： 在基板上由硅基材料构成的预定厚度的绝缘体保持在第二步骤中的供气和第三步骤中的高频电力的供应，第五步骤是将基板上的 形成绝缘膜并从腔室卸载基板。 在第四步骤中，将衬底在230℃至270℃的温度范围内保持加热，并且控制高频功率以使RF放电功率密度落在60至 100 mW / cm2。