摘要:
A solid electrolyte fuel cell plate structure includes a cell element layer composed of a solid electrolyte, an air electrode layer and a fuel electrode layer, a porous base body supporting the cell element layer, and a gas-impermeable member having electric conductivity. The cell element layer is arranged such that the solid electrolyte layer is sandwiched between the air electrode layer and the fuel electrode layer, with the air electrode layer or the fuel electrode layer being joined to the porous base body. The gas-impermeable member is associated with the solid electrolyte layer to allow gas internally passing through the porous base body to be separated from gas flowing outside the porous base body. Such a cell plate structure can be employed in a solid electrolyte fuel cell stack, which in turn can be employed in a solid electrolyte fuel cell electric power generation unit.
摘要:
A multilayer resin sheet is constituted by including a resin layer containing an epoxy resin having a mesogenic skeleton, a curing agent and an inorganic filler, and an insulating adhesive layer formed on at least either of the surfaces of the resin layer.A cured multilayer resin sheet originated from the multilayer resin sheet has high thermal conductivity, good insulation and adhesive strength, and, further, superior thermal shock resistance, and is suitable as an electric insulating material to be used for an electric or electronic device.
摘要:
A tire condition monitor device includes a circuit board mounted on a tire wheel for detecting a pneumatic pressure in an interior of a tire. The circuit board is covered with urethane resin. The urethane resin has finer resin meshes as compared with the conventional silicon resin serving as a board protecting resin. Since sulfur gas and water is hard to permeate through the urethane resin, gas barrier and dampproof properties can be improved. In a method of manufacturing the tire condition monitor device, a prebaking process is carried out before aboard protecting process of covering the circuit board with the urethane resin. Since moisture contained in the circuit board is vaporized, the circuit board covered with the urethane resin can reliably be protected from moisture.
摘要:
A solid electrolyte fuel cell plate structure includes a cell element layer composed of a solid electrolyte, an air electrode layer and a fuel electrode layer, a porous base body supporting the cell element layer, and a gas-impermeable member having electric conductivity. The cell element layer is arranged such that the solid electrolyte layer is sandwiched between the air electrode layer and the fuel electrode layer, with the air electrode layer or the fuel electrode layer being joined to the porous base body. The gas-impermeable member is associated with the solid electrolyte layer to allow gas internally passing through the porous base body to be separated from gas flowing outside the porous base body. Such a cell plate structure can be employed in a solid electrolyte fuel cell stack, which in turn can be employed in a solid electrolyte fuel cell electric power generation unit.
摘要:
A single cell for a solid oxide fuel cell, in which a solid electrolyte layer is sandwiched by an upper electrode layer and a lower electrode layer. This single cell includes a substrate having openings and an insulating and stress absorbing layer stacked on an upper surface of this substrate. The solid electrolyte layer is formed on an upper surface of the insulating and stress absorbing layer so as to cover the openings, the upper electrode layer is stacked on an upper surface of the solid electrolyte layer, and the lower electrode layer is coated on a lower surface of the solid electrolyte layer via the openings from a lower surface of the substrate. A cell plate, in which these single cells are disposed two-dimensionally on a common substrate. Furthermore, a solid oxide fuel cell, in which these cell plates and plate-shaped separators including gas passages on both surfaces thereof are alternately stacked.
摘要:
An undoped GaAs layer and a GaAs active layer are formed on a GaAs semiconductor substrate in that order, and a surface of the GaAs active layer is inactivated. Thereafter, a wafer composed of the GaAs semiconductor substrate, the undoped G&As layer and the GaAs active layer is annealed at temperatures ranging from 570 to 580.degree. C. in a molecular beam epitaxy apparatus. Thereafter, the wafer is maintained at temperatures ranging from 350 to 500.degree. C., and an insulating layer made of amorphous GaAs is formed on the GaAs active layer while using tertiary-butyl-gallium-sulfide-cubane "((t-Bu)GaS).sub.4 " as a source of the insulating layer. Thereafter, the insulating layer is patterned according to a photo-lithography method to form a gate insulating layer on the GaAs active layer. Thereafter, a source electrode and a drain electrode are formed on both sides of the gate insulating layer to arrange the source and drain electrodes separated from each other on the GaAs active layer, and a gate electrode is formed on the gate insulating layer.
摘要:
A method and a system for causing a neural circuit model to learn typical past control results of a process and using the neural circuit model for supporting an operation of the process. The neural circuit model is caused to learn by using, as input signals, a typical pattern of values of input variables at different points in time and, as a teacher signal, its corresponding values of the control variable. An unlearned pattern of input variables is inputted to the thus-learned neuron circuit model, whereby a corresponding value of the control variable is determined. Preferably, plural patterns at given time intervals can be simultaneously used as patterns to be learned.
摘要:
An undoped GaAs layer and a GaAs active layer are formed on a GaAs semiconductor substrate in that order, and a surface of the GaAs active layer is inactivated. Thereafter, a wafer composed of the GaAs semiconductor substrate, the undoped GaAs layer and the GaAs active layer is annealed at temperatures ranging from 570 to 580.degree. C. in a molecular beam epitaxy apparatus. Thereafter, the wafer is maintained at temperatures ranging from 350 to 500.degree. C., and an insulating layer made of amorphous GaAs is formed on the GaAs active layer while using tertiary-butyl-gallium-sulfide-cubane "((t-Bu)GaS).sub.4 " as a source of the insulating layer. Thereafter, the insulating layer is patterned according to a photo-lithography method to form a gate insulating layer on the GaAs active layer. Thereafter, a source electrode and a drain electrode are formed on both sides of the gate insulating layer to arrange the source and drain electrodes separated from each other on the GaAs active layer, and a gate electrode is formed on the gate insulating layer.
摘要:
When amounts of operation control variables and/or operation state evaluation variables of a plant are calculated through a multilayered neural network based on data indicating a plant state, and the calculated results are indicated to an operator, a plant operation support system has functions to analyze an internal causality between neurons in the neural network, and display quantitative guidance by association in the neural network and also the analyzed result of the internal causality between the neurons as an association reason.
摘要:
A thin film resistor for a strain gauge prepared by physical or chemical vapor deposition. The resistor contains 60 to 98 atomic % of chromium, 2 to 30 atomic % of oxygen, and 0 to 10 atomic % of a metal or semiconductor. These constituents are uniformly distributed. The thickness of the film is between 0.01 and 10 .mu.m. The metal is at least one of Al, Ti, Ta, Zr and In, and the semiconductor is at least one of silicon, germanium and boron. The thin film resistor has excellent resistance-strain characteristics and resistance-temperature characteristics, as well as high sensitivity and mechanical strength.