公开(公告)号：US20050145975A1

公开(公告)日：2005-07-07

申请号：US11054856

申请日：2005-02-10

申请人： Naoki Kumagai ,  Yuuichi Harada ,  Shinichi Jimbo ,  Yoshihiro Ikura ,  Tatsuhiko Fujihira ,  Kazuhiko Yoshida

发明人： Naoki Kumagai ,  Yuuichi Harada ,  Shinichi Jimbo ,  Yoshihiro Ikura ,  Tatsuhiko Fujihira ,  Kazuhiko Yoshida

IPC分类号： H01L29/872 ,  H01L21/822 ,  H01L21/8234 ,  H01L27/02 ,  H01L27/04 ,  H01L27/06 ,  H01L27/07 ,  H01L27/088 ,  H01L29/10 ,  H01L29/47 ,  H01L29/78 ,  H01L29/94

CPC分类号： H01L27/0255 ,  H01L27/0727 ,  H01L29/1087 ,  H01L29/47 ,  H01L29/7835

摘要： A semiconductor device is configured to prevent destruction of elements and/or miss-operation of the circuit by parasitic effects produced by parasitic transistors when a MOSFET of a bridge circuit is formed on a single chip. A Schottky junction is formed by providing an anode electrode in an n well region where a source region, a drain region, and a p well region of a lateral MOSFET. A Schottky barrier diode constituting a majority carrier device is connected in parallel with a PN junction capable of being forward-biased so that the PN junction is not forward-biased so that minority carriers are not generated, and thereby suppressing parasitic effects.

摘要翻译： 半导体器件被配置为当在单个芯片上形成桥接电路的MOSFET时，通过由寄生晶体管产生的寄生效应来防止元件的损坏和/或错误操作。 通过在横向MOSFET的源极区，漏极区和p阱区的n阱区域中设置阳极电极形成肖特基结。 构成多数载波器件的肖特基势垒二极管与能够正向偏置的PN结并联连接，使得PN结不被正向偏置，从而不产生少数载流子，从而抑制寄生效应。

公开(公告)号：US5380190A

公开(公告)日：1995-01-10

申请号：US110059

申请日：1993-08-20

申请人： Naoki Kumagai

发明人： Naoki Kumagai

IPC分类号： F23C15/00 ,  F23M99/00 ,  F23N5/16 ,  G10K11/178 ,  F23C11/04

CPC分类号： F23C15/00 ,  F23M20/005 ,  G10K11/1784 ,  G10K11/1788 ,  F23N5/16 ,  G10K2210/101 ,  G10K2210/12822 ,  G10K2210/1291 ,  G10K2210/3033 ,  G10K2210/3045 ,  G10K2210/3212

摘要： The present invention provides a relatively compact-sized pulse combustor which efficiently reduces an undesirable explosion and combustion noise without any bulky muffler. In the pulse combustor of the invention, a compensating sound is generated in an exhaust conduit synchronously with pulsative explosion and combustion. The compensating sound has a sound pressure identical with that of a noise in the exhaust conduit but a phase opposite to that of the noise, thus effectively compensating the noise in the exhaust conduit and efficiently reducing the noise from an exhaust outlet.

摘要翻译： 本发明提供了一种相对紧凑尺寸的脉冲燃烧器，其有效地减少了不需要任何笨重消音器的不期望的爆炸和燃烧噪声。 在本发明的脉冲燃烧器中，与脉动爆炸和燃烧同步地在排气导管中产生补偿声。 补偿声音具有与排气管道中的噪声相同的声压，但是与噪声相反的相位，因此有效地补偿了排气管道中的噪声并有效地降低了排气出口的噪音。

公开(公告)号：US5374203A

公开(公告)日：1994-12-20

申请号：US178484

申请日：1994-01-06

申请人： Yoshio Sato ,  Takashi Kamono ,  Ryoji Nishimura ,  Tsutomi Nakamura ,  Naoki Kumagai

发明人： Yoshio Sato ,  Takashi Kamono ,  Ryoji Nishimura ,  Tsutomi Nakamura ,  Naoki Kumagai

IPC分类号： H01R13/62 ,  H01R12/70 ,  H01R12/83 ,  H01R13/627 ,  H01K13/62

CPC分类号： H01R12/7005 ,  H01R12/83 ,  H01R13/627

摘要： An edge connector (1) having metal latching devices (5) to latch and unlatch a circuit board (4) is disclosed. More particularly the latching devices (5) include a latching section (53) for latching the board (4) and an unlatching section (54) for releasing the board (4).

摘要翻译： 公开了一种具有锁定和解锁电路板（4）的金属锁定装置（5）的边缘连接器（1）。 更具体地，锁定装置（5）包括用于闩锁板（4）的闩锁部分（53）和用于释放板（4）的解锁部分（54）。

公开(公告)号：US07247923B2

公开(公告)日：2007-07-24

申请号：US11235415

申请日：2005-09-26

申请人： Kazuhiko Yoshida ,  Takeshi Ichimura ,  Tatsuhiko Fujihira ,  Naoki Kumagai

发明人： Kazuhiko Yoshida ,  Takeshi Ichimura ,  Tatsuhiko Fujihira ,  Naoki Kumagai

IPC分类号： H01L29/00

CPC分类号： H01L29/7816 ,  H01L27/0251 ,  H01L29/7817 ,  H01L29/7821 ,  H01L29/7835 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device realizes a high electrostatic discharge withstanding capability and a high surge withstanding capability within the narrow chip area of a lateral MOSFET used in integrated intelligent switching devices, double-integration-type signal input and transfer IC's, and combined power IC's. The semiconductor device includes a vertical bipolar transistor in which a base is electrically connected to an emitter and a collector, and a lateral MOSFET including a drain electrode connected to a surface electrode. The vertical bipolar transistor absorbs electrostatic discharge or surge energy when a high electrostatic discharge voltage or a high surge voltage is applied and limits the electrostatic discharge voltage or the surge voltage to be lower than the breakdown voltage of the lateral MOSFET.

摘要翻译： 半导体器件在集成智能开关器件，双积分型信号输入和转换IC以及组合电源IC中使用的横向MOSFET的窄芯片区域内实现了高静电放电耐受能力和高耐冲击能力。 半导体器件包括其中基极电连接到发射极和集电极的垂直双极晶体管，以及包括连接到表面电极的漏电极的横向MOSFET。 当施加高静电放电电压或高浪涌电压时，垂直双极晶体管吸收静电放电或浪涌能量，并将静电放电电压或浪涌电压限制为低于横向MOSFET的击穿电压。

公开(公告)号：US20060027863A1

公开(公告)日：2006-02-09

申请号：US11196528

申请日：2005-08-03

申请人： Naoki Kumagai ,  Yuuichi Harada ,  Hiroshi Kanemaru ,  Yoshihiro Ikura ,  Ryuu Saitou

发明人： Naoki Kumagai ,  Yuuichi Harada ,  Hiroshi Kanemaru ,  Yoshihiro Ikura ,  Ryuu Saitou

IPC分类号： H01L29/76

CPC分类号： H01L29/7816 ,  H01L21/266 ,  H01L29/0878 ,  H01L29/0886 ,  H01L29/42368 ,  H01L29/66681

摘要： A lateral MOSFET and a method of forming thereof includes a p-type semiconductor substrate, a first n-type well in the surface portion of the semiconductor substrate, an n+-type drain region in the first n-type well, a p-type well in the first n-type well, an n+-type source region in the p-type well, a gate oxide film on the portion of the p-type well between the n+-type source region and the first n-type well, a gate electrode on the gate oxide film, and a second n-type well containing the p-type well therein to increase the n-type impurity concentration in the vicinity of the junction between the p-type well and the first n-type well beneath the gate and to increase the impurity amount and the thickness of the n-type semiconductor region beneath the p-type well. The first and second n-type wells can be overlapping or formed continuous or contiguous with each other. The lateral MOSFET exhibits a high punch-through breakdown voltage suitable for a high-side switch.

摘要翻译： 横向MOSFET及其形成方法包括p型半导体衬底，半导体衬底的表面部分中的第一n型阱，第一n型n型阱中的n + 型阱，p型阱中的第一n型阱中的p型阱，p型阱中的n + + +型源极区，p型阱部分中的栅极氧化膜 在n + +型源极区域和第一n型阱之间，栅极氧化物膜上的栅极电极以及其中包含p型阱的第二n型阱，以增加 在p型阱和栅极下面的第一n型阱之间的接合点附近的n型杂质浓度增加，并且增加p型阱下面的n型半导体区的杂质量和厚度。 第一和第二n型阱可以重叠或形成为彼此连续或连续的。 横向MOSFET表现出适合于高侧开关的高穿孔击穿电压。

公开(公告)号：US06501814B1

公开(公告)日：2002-12-31

申请号：US09961299

申请日：2001-09-25

申请人： Masashi Shimizu ,  Koichi Maki ,  Keiichiro Shibata ,  Masashi Oda ,  Naoki Kumagai ,  Hidetoshi Kanai

发明人： Masashi Shimizu ,  Koichi Maki ,  Keiichiro Shibata ,  Masashi Oda ,  Naoki Kumagai ,  Hidetoshi Kanai

IPC分类号： G21C1526

CPC分类号： G21C19/06

摘要： A dry radioactive substance storage facility stores spent fuel assemblies from nuclear power plants. The facility comprises a structure having a storage room storing storage tubes containing spent fuel assemblies. An air inlet duct defining an air inlet passage through which air is supplied into the storage room and a stack defining an air discharge passage through which air from the storage room is discharged outside are connected to the storage room. Radiation shielding members are disposed on the side of the air inlet duct and on the side of the stack, respectively, in the storage room to intercept radiation propagating toward the air inlet passage and the air discharge passage.

摘要翻译： 干放射性物质储存设备储存来自核电厂的乏燃料组件。 该设施包括具有储存室的结构，其存储含有乏燃料组件的储存管。 空气入口管道限定空气入口通道，空气通过该空气入口通道供应到储藏室;以及堆叠限定出空气排出通道的排气通道，通过该空气排放通道将来自储藏室的空气排出到外部的空间。 辐射屏蔽部件分别设置在进气管侧和堆叠侧的储藏室中，以拦截朝向进气通道和排气通道传播的辐射。

公开(公告)号：US06124628A

公开(公告)日：2000-09-26

申请号：US631017

申请日：1996-04-12

申请人： Tatsuhiko Fujihira ,  Yukio Yano ,  Shigeyuki Obinata ,  Naoki Kumagai

发明人： Tatsuhiko Fujihira ,  Yukio Yano ,  Shigeyuki Obinata ,  Naoki Kumagai

IPC分类号： H01L27/06 ,  H01L27/088 ,  H01L27/092 ,  H01L29/06 ,  H01L29/40 ,  H01L29/78 ,  H01L33/00

CPC分类号： H01L29/404 ,  H01L27/0623 ,  H01L27/0922 ,  H01L29/7809 ,  H01L29/7811 ,  H01L29/7835 ,  H01L29/0615 ,  H01L29/405 ,  H01L2924/14

摘要： A high voltage integrated circuit is provided that includes a first region of first conductivity type; a second region of second conductivity type formed in a first major surface of the first region; a third region of first conductivity type formed in a selected area of a surface of the second region; first source region and first drain region of the first conductivity type formed in the second region, apart from the third region; a first gate electrode formed on a surface of the second region between the first source region and first drain region, through an insulating film; second source region and second drain region of second conductivity type formed in a surface of the third region; and a second gate electrode formed on a surface of the third region between the second source region and the second drain region, through an insulating film.

摘要翻译： 提供了一种高压集成电路，其包括第一导电类型的第一区域; 形成在所述第一区域的第一主表面中的第二导电类型的第二区域; 形成在所述第二区域的表面的选定区域中的第一导电类型的第三区域; 形成在第二区域中的第一导电类型的第一源极区域和第一漏极区域; 通过绝缘膜形成在第一区域和第一漏极区域之间的第二区域的表面上的第一栅电极; 形成在第三区域的表面中的第二导电类型的第二源极区域和第二漏极区域; 以及通过绝缘膜形成在第二源极区域和第二漏极区域之间的第三区域的表面上的第二栅极电极。

公开(公告)号：US5896043A

公开(公告)日：1999-04-20

申请号：US784219

申请日：1997-01-16

申请人： Naoki Kumagai

发明人： Naoki Kumagai

IPC分类号： H03K3/356 ,  H03K17/06 ,  H03K19/0175

CPC分类号： H03K3/356113 ,  H03K17/063

摘要： A level shift circuit includes first and second operation circuits, a bias circuit, and a current control circuit. The first and second operation circuits include high-voltage transistors and low-voltage transistors connected in series. The high-voltage transistors are controlled according to a potential at the interconnection point between the low-voltage and high-voltage transistors of opposite operation circuits. The bias circuit is provided in a one-to-one correspondence with the operation circuits and connected to the low-voltage transistors in series to activate the transistors in the stationary on state and decrease currents flowing into the transistors to a stationary current. The current control circuit connects to the bias circuit in parallel to increase the currents just after the low-level transistors are turned on to a high peak current. The low-voltage transistors are turned on/off alternately in response to the state transition of an input signal. An operation object is turned on/off according to the potential at the interconnection point between both of the transistors of the second operation circuit.

摘要翻译： 电平移位电路包括第一和第二运算电路，偏置电路和电流控制电路。 第一和第二操作电路包括串联连接的高电压晶体管和低压晶体管。 高压晶体管根据相对运行电路的低压和高压晶体管之间的互连点的电位进行控制。 偏置电路与操作电路一一对应地提供并且串联连接到低压晶体管，以激活处于静态导通状态的晶体管，并将流入晶体管的电流减小到固定电流。 电流控制电路并联连接到偏置电路，以便在低电平晶体管接通之后增加电流至高峰值电流。 响应于输入信号的状态转换，低压晶体管交替地导通/截止。 根据第二操作电路的两个晶体管之间的互连点处的电位来打开/关闭操作对象。

公开(公告)号：US5303110A

公开(公告)日：1994-04-12

申请号：US854085

申请日：1992-03-19

申请人： Naoki Kumagai

发明人： Naoki Kumagai

IPC分类号： H01L29/78 ,  G05F1/569 ,  H01L27/02 ,  H01L27/04 ,  H01L27/06 ,  H01L27/088 ,  H03K17/082 ,  H02H7/10

CPC分类号： G05F1/569 ,  H01L27/0248 ,  H03K17/0822

摘要： An insulated-gate controlled semiconductor device including a main circuit that is controlled by an insulated gate having a gate resistor, an overload detector having the insulated gate for use in common with the main circuit, the overload detector being of the same construction as that of the main circuit, a current detector for detecting current passing through the overload detector, and a field effect transistor having a gate which accedes to the voltage drop of the current detector the main circuit being protected by lowering the voltage applied to the insulated gate through gate resistance and on-resistance of the field effect transistor while the field effect transistor is held on.

摘要翻译： 一种绝缘栅控制半导体器件，包括由具有栅极电阻的绝缘栅极控制的主电路，具有与主电路共用的绝缘栅的过载检测器，过载检测器的结构与 主电路，用于检测通过过载检测器的电流的电流检测器和具有栅极的场效应晶体管，其具有通过降低施加到绝缘栅极的电压而被保护的电流检测器的电压降的栅极 当场效应晶体管保持时，场效应晶体管的电阻和导通电阻。

公开(公告)号：US5092959A

公开(公告)日：1992-03-03

申请号：US561937

申请日：1990-08-02

申请人： Takeshi Orii ,  Yukio Suzuki ,  Tamotsu Konishi ,  Naoki Kumagai ,  Hiroaki Mori

发明人： Takeshi Orii ,  Yukio Suzuki ,  Tamotsu Konishi ,  Naoki Kumagai ,  Hiroaki Mori

IPC分类号： B01D1/18

CPC分类号： B01D1/18 ,  Y10S159/41 ,  Y10S203/23

摘要： A spray dryer device for spray drying a sample dissolved in an organic solvent is disclosed, comprising a circulation line in which an inert gas is circulated by a blower, a heater for heating the inert gas to a specified temperature, a main drying chamber provided with a spray nozzle through which the sample dissolved in the organic solvent is sprayed into the inert gas, a collector in which the powdered sample produced in the main drying chamber is collected, and a condenser in which the gaseous organic solvent is condensed and recovered. The powdered sample is obtained in this spray dryer device for spray drying organic solvents by spraying the organic solvent through the spray nozzle into the main drying chamber in which the oxygen concentration is held to a low value by the introduction of the inert gas.

摘要翻译： 公开了一种用于喷雾干燥溶解在有机溶剂中的样品的喷雾干燥装置，其包括循环管线，惰性气体通过鼓风机循环，用于将惰性气体加热到特定温度的加热器， 将溶解在有机溶剂中的样品喷射到惰性气体中的喷嘴，收集在主干燥室中产生的粉末样品的收集器和冷凝回收气态有机溶剂的冷凝器。 在该喷雾干燥装置中，通过将有机溶剂通过喷嘴喷雾到主干燥室中，通过引入惰性气体将氧浓度保持在低的值，在该喷雾干燥装置中获得粉末样品。