公开(公告)号：US07842583B2

公开(公告)日：2010-11-30

申请号：US12333650

申请日：2008-12-12

申请人： Naoki Tsukamoto ,  Akihisa Shimomura

发明人： Naoki Tsukamoto ,  Akihisa Shimomura

IPC分类号： H01L21/30

CPC分类号： H01L21/76251 ,  B23K26/3576 ,  C30B33/04 ,  H01L21/02686 ,  H01L21/84 ,  H01L29/66772

摘要： A semiconductor substrate is manufactured in which a plurality of single crystal semiconductor layers is fixed to a base substrate having low heat resistance such as a glass substrate with a buffer layer interposed therebetween. A plurality of single crystal semiconductor substrates is prepared, each of which includes a buffer layer and a damaged region which is formed by adding hydrogen ions to each semiconductor substrate and contains a large amount of hydrogen. One or more of these single crystal semiconductor substrates is fixed to a base substrate and irradiated with an electromagnetic wave having a frequency of 300 MHz to 300 GHz, thereby being divided along the damaged region. Fixture of single crystal semiconductor substrates and electromagnetic wave irradiation are repeated to manufacture a semiconductor substrate where a required number of single crystal semiconductor substrates are fixed onto the base substrate.

摘要翻译： 制造半导体衬底，其中多个单晶半导体层被固定到具有低耐热性的基底衬底，例如玻璃衬底，其间插入有缓冲层。 制备多个单晶半导体衬底，每个单晶半导体衬底包括缓冲层和通过向每个半导体衬底添加氢离子并含有大量氢而形成的损伤区域。 将这些单晶半导体基板中的一个或多个固定到基底基板上并用频率为300MHz至300GHz的电磁波照射，从而沿着损伤区域分割。 重复单晶半导体衬底的夹持和电磁波照射，制造半导体衬底，其中所需数量的单晶半导体衬底被固定到基底衬底上。

公开(公告)号：US20090233101A1

公开(公告)日：2009-09-17

申请号：US12404694

申请日：2009-03-16

申请人： Naoki TSUKAMOTO

发明人： Naoki TSUKAMOTO

IPC分类号： B32B27/06 ,  B32B27/00 ,  C23C14/34

CPC分类号： C08J7/045 ,  H01L51/5256 ,  Y10T428/31533 ,  Y10T428/31855

摘要： In a method for producing a barrier laminate having an organic layer and an inorganic layer on a support, the organic layer is formed by sputtering. The barrier laminate produced by the method has an excellent barrier property.

摘要翻译： 在支撑体上具有有机层和无机层的阻挡层叠体的制造方法中，通过溅射形成有机层。 通过该方法制备的阻隔层压板具有优异的阻隔性能。

公开(公告)号：US08070917B2

公开(公告)日：2011-12-06

申请号：US12332808

申请日：2008-12-11

申请人： Naoki Tsukamoto

发明人： Naoki Tsukamoto

IPC分类号： C23C14/35 ,  C23C14/06 ,  C23C14/50 ,  C23C14/54

CPC分类号： C23C14/562 ,  C23C14/0036 ,  C23C14/044 ,  C23C14/081 ,  C23C14/345 ,  C23C14/351 ,  H01J37/3277 ,  H01J37/3405

摘要： A reactive sputtering method for application of a bias voltage to a supporting substrate in formation of a film of a metal compound on the supporting substrate according to a bias sputtering method; wherein a supporting substrate conveyor unit and a cathode that includes a target facing the supporting substrate conveyor unit are provided; the supporting substrate is conveyed between the supporting substrate conveyor unit and the target for formation of a film of a metal compound on the supporting substrate; magnets are provided adjacent to the supporting substrate conveyor unit on a side thereof opposite to that of the supporting substrate, such that a magnetic field is closed and a continuing tunnel part of parallel or nearly parallel arched magnetic force lines forms an oval or a polygon on the supporting substrate, the magnets each having a first magnetic pole of an S pole or an N pole and a second magnetic pole opposite to the first magnetic pole, the second magnetic pole surrounding the first magnetic pole; and in film formation on the supporting substrate, the magnets are rotated inside a drum in an opposite direction to that in which the supporting substrate is conveyed outside of the drum, so as to secure uniform plasma application along the supporting substrate.

摘要翻译： 根据偏置溅射法在支撑基板上形成金属化合物膜的反应溅射方法，用于在支撑基板上施加偏置电压; 其中，设置有支撑基板输送单元和包括面向所述支撑基板输送单元的目标的阴极; 支撑基板在支撑基板输送单元和用于在支撑基板上形成金属化合物膜的目标之间传送; 在支撑基板输送单元的与支撑基板的一侧相反的一侧设置磁体，使得磁场闭合，并且平行或几乎平行的拱形磁力线的连续通道部分形成椭圆形或多边形 所述支撑基板，所述磁体各自具有S极或N极的第一磁极和与所述第一磁极相对的第二磁极，所述第二磁极围绕所述第一磁极; 并且在支撑基板上的成膜中，磁体在鼓内沿与将支撑基板输送到滚筒外侧相反的方向旋转，以便沿着支撑基板确保均匀的等离子体施加。

公开(公告)号：US07709097B2

公开(公告)日：2010-05-04

申请号：US11902895

申请日：2007-09-26

申请人： Yuya Agata ,  Naoki Tsukamoto ,  Shun-ichi Ishikawa

发明人： Yuya Agata ,  Naoki Tsukamoto ,  Shun-ichi Ishikawa

IPC分类号： B32B15/04 ,  B32B27/00

CPC分类号： B32B15/08 ,  Y10T428/31678 ,  Y10T428/31692 ,  Y10T428/31855

摘要： A gas-barrier laminate film comprising at least one inorganic layer and at least one organic layer comprising a polymer of an acrylic monomer as a main ingredient on a substrate film, wherein the organic layer comprises a polymerization product of a bi- or more-functional polymerizing monomer having at least one sulfonyl group. The laminate film is highly resistant to moisture penetration and applicable to flexible organic EL devices.

摘要翻译： 一种阻气性层压膜，其包含至少一个无机层和至少一个有机层，所述至少一个有机层包含丙烯酸类单体的聚合物作为主要成分在基材膜上，其中所述有机层包含双功能或多官能的聚合产物 聚合具有至少一个磺酰基的单体。 该层压膜具有高度的耐湿透性，适用于柔性有机EL器件。

公开(公告)号：US20090170286A1

公开(公告)日：2009-07-02

申请号：US12333650

申请日：2008-12-12

申请人： Naoki TSUKAMOTO ,  Akihisa SHIMOMURA

发明人： Naoki TSUKAMOTO ,  Akihisa SHIMOMURA

IPC分类号： H01L21/762

CPC分类号： H01L21/76251 ,  B23K26/3576 ,  C30B33/04 ,  H01L21/02686 ,  H01L21/84 ,  H01L29/66772

摘要： A semiconductor substrate is manufactured in which a plurality of single crystal semiconductor layers is fixed to a base substrate having low heat resistance such as a glass substrate with a buffer layer interposed therebetween. A plurality of single crystal semiconductor substrates is prepared, each of which includes a buffer layer and a damaged region which is formed by adding hydrogen ions to each semiconductor substrate and contains a large amount of hydrogen. One or more of these single crystal semiconductor substrates is fixed to a base substrate and irradiated with an electromagnetic wave having a frequency of 300 MHz to 300 GHz, thereby being divided along the damaged region. Fixture of single crystal semiconductor substrates and electromagnetic wave irradiation are repeated to manufacture a semiconductor substrate where a required number of single crystal semiconductor substrates are fixed onto the base substrate.

摘要翻译： 制造半导体衬底，其中多个单晶半导体层被固定到具有低耐热性的基底衬底，例如玻璃衬底，其间插入有缓冲层。 制备多个单晶半导体衬底，每个单晶半导体衬底包括缓冲层和通过向每个半导体衬底添加氢离子并含有大量氢而形成的损伤区域。 将这些单晶半导体基板中的一个或多个固定到基底基板上并用频率为300MHz至300GHz的电磁波照射，从而沿着损伤区域分割。 重复单晶半导体衬底的夹持和电磁波照射，制造半导体衬底，其中所需数量的单晶半导体衬底被固定到基底衬底上。

公开(公告)号：US20090159429A1

公开(公告)日：2009-06-25

申请号：US12332808

申请日：2008-12-11

申请人： Naoki TSUKAMOTO

发明人： Naoki TSUKAMOTO

IPC分类号： C23C14/35

CPC分类号： C23C14/562 ,  C23C14/0036 ,  C23C14/044 ,  C23C14/081 ,  C23C14/345 ,  C23C14/351 ,  H01J37/3277 ,  H01J37/3405

摘要： Disclosed is a A reactive sputtering apparatus for a bias sputtering method of applying a bias voltage to a supporting substrate in formation of a film of a metal compound on the supporting substrate according to a reactive sputtering method; which comprises a supporting substrate conveyor unit and a cathode that includes a target provided to face the supporting substrate conveyor unit, and wherein a supporting substrate is conveyed between the supporting substrate conveyor unit and the target for formation of a metal compound on the supporting substrate, magnets are provided adjacent to the supporting substrate conveyor unit on the side thereof opposite to the supporting substrate in such that the magnetic field is closed and the continuing tunnel part of parallel or nearly parallel arched magnetic force lines forms an oval or a polygon, on the supporting substrate, the magnets each having a first magnetic pole of an S pole or an N pole and a second magnetic pole opposite to the first magnetic pole, the second magnetic pole surrounding the first magnetic pole and, in film formation on the supporting substrate, the supporting substrate is conveyed on the same plane as that of the tunnel part and in the direction nearly perpendicular to the tunnel part.

摘要翻译： 公开了一种用于偏置溅射方法的反应溅射装置，其中，根据反应溅射法，在支撑基板上形成金属化合物膜时，向支撑基板施加偏置电压; 其包括支撑基板输送单元和阴极，所述阴极包括设置成面向所述支撑基板输送单元的目标，并且其中支撑基板在所述支撑基板输送单元和所述目标之间输送以在所述支撑基板上形成金属化合物， 在支撑基板输送单元的与支撑基板相对的一侧设置磁体，使得磁场闭合，并且平行或几乎平行的拱形磁力线的连续通道部分形成椭圆形或多边形， 所述磁体各自具有S极或N极的第一磁极和与所述第一磁极相对的第二磁极，所述第二磁极围绕所述第一磁极，并且在所述支撑基板上的膜形成中， 支撑基板在与隧道部分的平面相同的平面上并且在几乎持续的方向上被传送 密封到隧道部分。

公开(公告)号：USD290113S

公开(公告)日：1987-06-02

申请号：US673561

申请日：1984-11-21

申请人： Jyoji Kukita ,  Naoki Tsukamoto ,  Shin-ichi Morinaga

设计人： Jyoji Kukita ,  Naoki Tsukamoto ,  Shin-ichi Morinaga

公开(公告)号：US20090233108A1

公开(公告)日：2009-09-17

申请号：US12404761

申请日：2009-03-16

申请人： Naoki TSUKAMOTO

发明人： Naoki TSUKAMOTO

IPC分类号： B32B9/00 ,  B05D3/00 ,  C23C16/22 ,  C23C14/34

CPC分类号： C23C14/566 ,  C23C14/0652 ,  C23C14/081 ,  H01L51/5237 ,  H01L51/5256 ,  Y10T428/31678

摘要： A vacuum film formation method for forming at least one inorganic layer on a support, which comprise transporting a support of which the area of the surface to be coated with an inorganic layer formed thereon is a (unit: cm2) into a first vacuum tank having a capacity of at most 100 a (unit: cm3) under atmospheric pressure, degassing the first vacuum tank into a vacuum, transporting the support from the first vacuum tank to a second vacuum tank while the vacuum condition is kept as such, and forming at least one inorganic layer on the support in the second vacuum tank.

摘要翻译： 一种用于在载体上形成至少一个无机层的真空成膜方法，其包括将其上形成有无机层的待涂覆表面的面积作为（单位：cm2）的载体输送到具有 在大气压下至多100a（单位：cm3）的容量，将第一真空槽脱气成真空，将载体从第一真空槽输送到第二真空槽，同时保持真空状态，并形成 在第二真空槽中的载体上的至少一个无机层。

公开(公告)号：US20090181552A1

公开(公告)日：2009-07-16

申请号：US12353384

申请日：2009-01-14

申请人： Akihisa Shimomura ,  Naoki Tsukamoto

发明人： Akihisa Shimomura ,  Naoki Tsukamoto

IPC分类号： H01L21/263 ,  H01L21/67

CPC分类号： H01L21/268 ,  B23K26/08 ,  B23K26/123 ,  B23K26/14 ,  B23K26/702 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/02675 ,  H01L21/84 ,  H01L29/66772 ,  H01L29/78621

摘要： An SOI substrate having a single crystal semiconductor layer the surface of which has high planarity is manufactured. A semiconductor substrate is doped with hydrogen to form a damaged region containing a large amount of hydrogen. After a single crystal semiconductor substrate and a supporting substrate are bonded to each other, the semiconductor substrate is heated to separate the single crystal semiconductor substrate in the damaged region. While a heated high-purity nitrogen gas is sprayed on a separation surface of a single crystal semiconductor layer which is separated from the single crystal semiconductor substrate and irradiation with a microwave is performed from the back side of the supporting substrate, the separation surface is irradiated with a laser beam. The single crystal semiconductor layer is melted by irradiation with the laser beam, so that the surface of the single crystal semiconductor layer is planarized and re-single-crystallization thereof is performed. In addition, the length of the melting time is increased by irradiation with the nitrogen gas and the microwave; thus, the re-single-crystallization is performed more efficiently.

摘要翻译： 制造具有表面具有高平坦度的单晶半导体层的SOI衬底。 掺杂氢的半导体衬底形成含有大量氢的损伤区域。 在单晶半导体衬底和支撑衬底彼此接合之后，加热半导体衬底以在损坏区域中分离单晶半导体衬底。 在从单晶半导体基板分离的单晶半导体层的分离面上喷射加热的高纯度氮气，从支撑基板的背面进行微波照射，分离面被照射 用激光束。 通过用激光束照射使单晶半导体层熔融，从而使单晶半导体层的表面平坦化并进行其单结晶化。 另外，通过用氮气和微波的照射来提高熔融时间的长度; 因此，更有效地进行再单晶化。

公开(公告)号：US20090128312A1

公开(公告)日：2009-05-21

申请号：US12289549

申请日：2008-10-30

申请人： Shinichi Sawada ,  Yasuhiro Sakakibara ,  Minoru Shibata ,  Naoki Omatsu ,  Atsunosuke Tanaka ,  Naoki Tsukamoto ,  Hirotaka Okada

发明人： Shinichi Sawada ,  Yasuhiro Sakakibara ,  Minoru Shibata ,  Naoki Omatsu ,  Atsunosuke Tanaka ,  Naoki Tsukamoto ,  Hirotaka Okada

IPC分类号： B60Q1/00

CPC分类号： B60H1/0065

摘要： A compartment temperature adjustment switch 12 is provided for successively switching a target temperature of a compartment air conditioner through pushing operation of a push button 12a. The switch 12 includes the push button 12a, a substrate 22 fixed to the push button 12a, and light emitting elements 23 mounted on the substrate 22. The segments are selectively illuminated when the light emitting elements 23 are turned on, and a target temperature is numerically displayed on the push button 12a by a combination of illuminated ones of the segments. An information display portion is integrally formed with the push button 12a.

摘要翻译： 提供室温度调节开关12，用于通过推动按钮12a的操作来依次切换室内空调的目标温度。 开关12包括按钮12a，固定到按钮12a的基板22和安装在基板22上的发光元件23.当发光元件23接通时，选择性地照亮这些段，并且目标温度为 通过组合照明的片段数字显示在按钮12a上。 信息显示部分与按钮12a整体形成。