公开(公告)号：US20140264483A1

公开(公告)日：2014-09-18

申请号：US13815734

申请日：2013-03-15

Applicant: Naomi Yoshida ,  Adam Brand

Inventor： Naomi Yoshida ,  Adam Brand

IPC: H01L29/49 ,  H01L29/40

CPC classification number: H01L29/785 ,  H01L21/28079 ,  H01L21/28088 ,  H01L21/28194 ,  H01L29/4958 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/66545

Abstract: The present invention relates to combinations of materials and fabrication techniques which are useful in the fabrication of filled, metal-comprising gates for use in planar and 3D Field Effect Transistor (FET) structures. The FET structures described are of the kind needed for improved performance in semiconductor device structures produced at manufacturing nodes which implement semiconductor feature sizes in the 15 nm range or lower.

Abstract translation: 本发明涉及可用于制造用于平面和3D场效应晶体管（FET）结构的填充的含金属栅极的材料和制造技术的组合。 描述的FET结构是在实现15nm或更低的半导体特征尺寸的制造节点处产生的半导体器件结构中改善性能所需的FET结构。

公开(公告)号：US20120015521A1

公开(公告)日：2012-01-19

申请号：US13093679

申请日：2011-04-25

Applicant: Hang Yu ,  Deenesh Padhi ,  Man-Ping Cai ,  Naomi Yoshida ,  Li Yan Miao ,  Siu F. Cheng ,  Shahid Shaikh ,  Sohyun Park ,  Heung Lak Park ,  Bok Hoen Kim

Inventor： Hang Yu ,  Deenesh Padhi ,  Man-Ping Cai ,  Naomi Yoshida ,  Li Yan Miao ,  Siu F. Cheng ,  Shahid Shaikh ,  Sohyun Park ,  Heung Lak Park ,  Bok Hoen Kim

IPC: H01L21/308 ,  H01L21/32

CPC classification number: H01L21/02115 ,  C23C16/26 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/0332 ,  H01L21/0337 ,  H01L21/0338

Abstract: Embodiments described herein relate to materials and processes for patterning and etching features in a semiconductor substrate. In one embodiment, a method of forming a composite amorphous carbon layer for improved stack defectivity on a substrate is provided. The method comprises positioning a substrate in a process chamber, introducing a hydrocarbon source gas into the process chamber, introducing a diluent source gas into the process chamber, introducing a plasma-initiating gas into the process chamber, generating a plasma in the process chamber, forming an amorphous carbon initiation layer on the substrate, wherein the hydrocarbon source gas has a volumetric flow rate to diluent source gas flow rate ratio of 1:12 or less; and forming a bulk amorphous carbon layer on the amorphous carbon initiation layer, wherein a hydrocarbon source gas used to form the bulk amorphous carbon layer has a volumetric flow rate to a diluent source gas flow rate of 1:6 or greater to form the composite amorphous carbon layer.

Abstract translation: 本文描述的实施例涉及用于图案化和蚀刻半导体衬底中的特征的材料和工艺。 在一个实施例中，提供了形成用于提高衬底缺陷率的复合非晶碳层的方法。 该方法包括将基板定位在处理室中，将烃源气体引入处理室中，将稀释源气体引入处理室，将等离子体起始气体引入处理室，在处理室中产生等离子体， 在所述基板上形成无定形碳起始层，其中所述烃源气体的体积流量与稀释剂源气体流量比为1:12以下; 以及在所述无定形碳起始层上形成块状无定形碳层，其中用于形成所述块状无定形碳层的烃源气体具有以1:6或更大的稀释剂源气体流量的体积流量，以形成所述复合非晶体 碳层。

公开(公告)号：US20050168593A1

公开(公告)日：2005-08-04

申请号：US10769375

申请日：2004-01-29

Applicant: Naomichi Akizuki ,  Naomi Yoshida ,  Agus Suharno

Inventor： Naomichi Akizuki ,  Naomi Yoshida ,  Agus Suharno

IPC: G01N21/954 ,  G06T3/40 ,  H04N5/225 ,  H04N5/228

CPC classification number: G06T3/4038 ,  G01N21/954 ,  G06K9/32 ,  G06K2009/2045 ,  H04N2005/2255

Abstract: An image processing system automatically generates a seamless and continuous developed still image with little distortion by creating a developed diagram in the circumferential direction of a tube from one frame of a video image of an inner wall of a tubular object photographed by a video camera while moving in the axial direction of the tubular object and stitching the developed diagrams with each other in the longitudinal direction (i.e., on a central axis) of the tube by mosaic processing.

Abstract translation: 图像处理系统通过在移动中由摄像机拍摄的管状物体的内壁的视频图像的一帧中在管的圆周方向上产生显影图，自动生成几乎没有变形的无缝且连续显影的静止图像 在管状物体的轴向上，并通过马赛克处理在管的纵向（即，在中心轴线上）彼此缝合显影图。

公开(公告)号：US06488984B1

公开(公告)日：2002-12-03

申请号：US09830633

申请日：2001-04-30

Applicant: Yuichi Wada ,  Hiroyuki Yarita ,  Hisashi Aida ,  Naomi Yoshida

Inventor： Yuichi Wada ,  Hiroyuki Yarita ,  Hisashi Aida ,  Naomi Yoshida

IPC: B05D302

CPC classification number: H01L21/76877 ,  C23C18/08 ,  H01L21/28556 ,  H01L21/6715

Abstract: The present invention is directed to a film deposition method, which performs one series of processing from formation of the barrier metal up to and including formation of the metal layer in an environment cut off from air. Specifically, the performing of the barrier metal layer formation in a first device and the metal layer formation in a second device; and the transport of a semiconductor wafer from the first device to the second device is performed through a transport pathway that is cut off from air. As a result, the barrier metal layer that is formed is not affected by, for example, natural oxidation and layer quality is improved.

Abstract translation: 本发明涉及一种成膜方法，该方法从在从空气中切断的环境中形成阻挡金属直至包括金属层的形成进行一系列处理。 具体地说，在第一装置中进行阻挡金属层的形成，在第二装置中进行金属层的形成; 并且通过从空气中切断的输送路径，将半导体晶片从第一装置输送到第二装置。 结果，形成的阻挡金属层不受例如天然氧化的影响，并且层质量得到改善。

公开(公告)号：US09018054B2

公开(公告)日：2015-04-28

申请号：US13815734

申请日：2013-03-15

Applicant: Naomi Yoshida ,  Adam Brand

Inventor： Naomi Yoshida ,  Adam Brand

IPC: H01L21/84 ,  H01L29/78 ,  H01L21/28 ,  H01L29/49 ,  H01L29/66 ,  H01L29/51

CPC classification number: H01L29/785 ,  H01L21/28079 ,  H01L21/28088 ,  H01L21/28194 ,  H01L29/4958 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/66545

Abstract: The present invention relates to combinations of materials and fabrication techniques which are useful in the fabrication of filled, metal-comprising gates for use in planar and 3D Field Effect Transistor (FET) structures. The FET structures described are of the kind needed for improved performance in semiconductor device structures produced at manufacturing nodes which implement semiconductor feature sizes in the 15 nm range or lower.

Abstract translation: 本发明涉及可用于制造用于平面和3D场效应晶体管（FET）结构的填充的含金属栅极的材料和制造技术的组合。 描述的FET结构是在实现15nm或更低的半导体特征尺寸的制造节点处产生的半导体器件结构中改善性能所需的FET结构。

公开(公告)号：US20060150032A1

公开(公告)日：2006-07-06

申请号：US10543373

申请日：2004-01-27

Applicant: Kouji Furukawa ,  Kazuhiko Nakamura ,  Yasuhiko Handa ,  Naomi Yoshida ,  Jun Shinano ,  Jun Kaida

Inventor： Kouji Furukawa ,  Kazuhiko Nakamura ,  Yasuhiko Handa ,  Naomi Yoshida ,  Jun Shinano ,  Jun Kaida

IPC: G06F11/00

CPC classification number: G06F1/3203 ,  G06F1/3231 ,  G06F1/329 ,  G06F11/1461 ,  Y02D10/173 ,  Y02D10/24

Abstract: There are provided a state monitoring device and a state management system which monitor a use state of a PC by a user by utilizing detecting results of the human detection sensor effectively. The state monitoring device (10) for detecting whether a user is present at an operative position of PC (20), is connected to the PC (20) on a LAN (30). The information provided for the PC (20) by the state monitoring device (10), is shared with all the PCs (20) on the LAN (30).

Abstract translation: 提供了一种状态监视装置和状态管理系统，其通过有效地利用人体检测传感器的检测结果来监视用户的使用状态。 用于检测用户是否存在于PC（20）的操作位置的状态监视设备（10）被连接到LAN（30）上的PC（20）。 由状态监视装置（10）为PC（20）提供的信息与LAN（30）上的所有PC（20）共享。

公开(公告)号：US20060109022A1

公开(公告)日：2006-05-25

申请号：US10997267

申请日：2004-11-24

Applicant: Naomi Yoshida ,  Toshiyuki Nagata

Inventor： Naomi Yoshida ,  Toshiyuki Nagata

IPC: G01R31/26

CPC classification number: H01L22/34 ,  G01R31/2831 ,  G01R31/2853 ,  G01R31/2856 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A flexible semiconductor test structure that may be incorporated into a semiconductor device is provided. The test structure may include a plurality of test pads designed to physically stress conductive lines to which they are attached during thermal cycling. By utilizing test pads with different dimensions (lengths and/or widths), the effects of thermal stress generated by a plurality of conductive lines having corresponding different dimensions may be simulated.

公开(公告)号：US06593252B1

公开(公告)日：2003-07-15

申请号：US09830609

申请日：2001-04-30

Applicant: Yuichi Wada ,  Hiroyuki Yarita ,  Hisashi Aida ,  Naomi Yoshida

Inventor： Yuichi Wada ,  Hiroyuki Yarita ,  Hisashi Aida ,  Naomi Yoshida

IPC: H01L21469

CPC classification number: H01L21/6715 ,  C23C18/08

Abstract: The present invention is characterized by comprising a supply means (28) for supplying an organometallic fluid, which has an organic metal as a main component and which precipitates film deposition material using a pyrolytic decomposition reaction; an application means (126) for applying the organometallic fluid that is supplied by said supply means onto a to-be-processed body; and a heating means (52) for heating to a predetermined temperature the to-be-processed body to which is applied the organometallic fluid by said application means; wherein said application means (126) is characterized by being outfitted with an application fluid containing body (100), which is capable of containing said organometallic fluid and capable of coming into contact with and separation from said to-be-processed body.

Abstract translation: 本发明的特征在于包括用于供应有机金属液体的供给装置（28），所述有机金属液体以有机金属为主要成分，并使用热分解反应沉淀成膜材料; 用于将由所述供给装置供应的有机金属液体施加到待处理体上的施加装置（126） 以及加热装置（52），用于将由所述施加装置施加有机金属液体的待处理体加热到预定温度; 其特征在于，所述施加装置（126）的特征在于，其配备有能够容纳所述有机金属液体并且能够与所述待处理体接触并与其分离的涂布液体（100）。

公开(公告)号：US08349741B2

公开(公告)日：2013-01-08

申请号：US13455916

申请日：2012-04-25

Applicant: Hang Yu ,  Deenesh Padhi ,  Man-Ping Cai ,  Naomi Yoshida ,  Li Yan Miao ,  Siu F. Cheng ,  Shahid Shaikh ,  Sohyun Park ,  Heung Lak Park ,  Bok Hoen Kim

Inventor： Hang Yu ,  Deenesh Padhi ,  Man-Ping Cai ,  Naomi Yoshida ,  Li Yan Miao ,  Siu F. Cheng ,  Shahid Shaikh ,  Sohyun Park ,  Heung Lak Park ,  Bok Hoen Kim

IPC: H01L21/308 ,  H01L21/32

CPC classification number: H01L21/02115 ,  C23C16/26 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/0332 ,  H01L21/0337 ,  H01L21/0338

Abstract: Embodiments described herein relate to materials and processes for patterning and etching features in a semiconductor substrate. In one embodiment, a method of forming a composite amorphous carbon layer is provided. The method comprises positioning a substrate in a process chamber, introducing a hydrocarbon source gas into the process chamber, introducing a diluent source gas into the process chamber, introducing a plasma-initiating gas into the process chamber, generating a plasma in the process chamber, forming an amorphous carbon initiation layer on the substrate, wherein the hydrocarbon source gas has a volumetric flow rate to diluent source gas flow rate ratio of 1:12 or less, and forming a bulk amorphous carbon layer on the amorphous carbon initiation layer, wherein a hydrocarbon source gas used to form the bulk amorphous carbon layer has a volumetric flow rate to a diluent source gas flow rate of 1:6 or greater.

Abstract translation: 本文描述的实施例涉及用于图案化和蚀刻半导体衬底中的特征的材料和工艺。 在一个实施方案中，提供了形成复合无定形碳层的方法。 该方法包括将基板定位在处理室中，将烃源气体引入处理室中，将稀释源气体引入处理室，将等离子体起始气体引入处理室，在处理室中产生等离子体， 在所述基板上形成无定形碳起始层，其中所述烃源气体的体积流量与稀释剂源气体流量比为1:12以下，并且在所述无定形碳起始层上形成块状无定形碳层，其中， 用于形成大块无定形碳层的烃源气体的体积流量为稀释剂源气体流速为1：6或更大。

公开(公告)号：US08227352B2

公开(公告)日：2012-07-24

申请号：US13093679

申请日：2011-04-25

Applicant: Hang Yu ,  Deenesh Padhi ,  Man-Ping Cai ,  Naomi Yoshida ,  Li Yan Miao ,  Siu F. Cheng ,  Shahid Shaikh ,  Sohyun Park ,  Heung Lak Park ,  Bok Hoen Kim

Inventor： Hang Yu ,  Deenesh Padhi ,  Man-Ping Cai ,  Naomi Yoshida ,  Li Yan Miao ,  Siu F. Cheng ,  Shahid Shaikh ,  Sohyun Park ,  Heung Lak Park ,  Bok Hoen Kim

IPC: H01L21/308 ,  H01L21/32

CPC classification number: H01L21/02115 ,  C23C16/26 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/0332 ,  H01L21/0337 ,  H01L21/0338

Abstract: Embodiments described herein relate to materials and processes for patterning and etching features in a semiconductor substrate. In one embodiment, a method of forming a composite amorphous carbon layer for improved stack defectivity on a substrate is provided. The method comprises positioning a substrate in a process chamber, introducing a hydrocarbon source gas into the process chamber, introducing a diluent source gas into the process chamber, introducing a plasma-initiating gas into the process chamber, generating a plasma in the process chamber, forming an amorphous carbon initiation layer on the substrate, wherein the hydrocarbon source gas has a volumetric flow rate to diluent source gas flow rate ratio of 1:12 or less; and forming a bulk amorphous carbon layer on the amorphous carbon initiation layer, wherein a hydrocarbon source gas used to form the bulk amorphous carbon layer has a volumetric flow rate to a diluent source gas flow rate of 1:6 or greater to form the composite amorphous carbon layer.

Abstract translation: 本文描述的实施例涉及用于图案化和蚀刻半导体衬底中的特征的材料和工艺。 在一个实施例中，提供了形成用于提高衬底缺陷率的复合非晶碳层的方法。 该方法包括将基板定位在处理室中，将烃源气体引入处理室中，将稀释源气体引入处理室，将等离子体起始气体引入处理室，在处理室中产生等离子体， 在所述基板上形成无定形碳起始层，其中所述烃源气体的体积流量与稀释剂源气体流量比为1:12以下; 以及在所述无定形碳起始层上形成块状无定形碳层，其中用于形成所述块状无定形碳层的烃源气体具有以1:6或更大的稀释剂源气体流量的体积流量，以形成所述复合非晶体 碳层。