公开(公告)号：US09196473B2

公开(公告)日：2015-11-24

申请号：US13976673

申请日：2011-12-16

申请人： Yosuke Ota ,  Yoshiro Hirose ,  Naonori Akae ,  Yushin Takasawa

发明人： Yosuke Ota ,  Yoshiro Hirose ,  Naonori Akae ,  Yushin Takasawa

IPC分类号： C23C16/30 ,  C23C16/34 ,  C23C16/40 ,  H01L21/02 ,  C23C16/455

CPC分类号： H01L21/0214 ,  C23C16/308 ,  C23C16/45527 ,  C23C16/45531 ,  C23C16/45563 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/0228

摘要： A method that includes: forming a specific element-containing layer by supplying a source gas to the substrate heated in a processing vessel, under a condition that a thermal decomposition reaction of the source gas is caused; changing the specific element-containing layer to a nitride layer by supplying a nitrogen-containing gas to the substrate; and changing the nitride layer to an oxynitride layer by supplying an oxygen-containing gas to the substrate, the source gas is sprayed in parallel to a surface of the substrate more strongly than a case of spraying the inert gas in parallel to the surface of the substrate in purging the inside of the processing vessel, by supplying an inert gas or a hydrogen-containing gas through the nozzle.

摘要翻译： 一种方法，其包括：在引起所述源气体的热分解反应的条件下，通过将源气体供给到在处理容器中加热的基板来形成特定含有元素的层; 通过向所述基板供给含氮气体，将所述特定含有元素的层改变为氮化物层; 并且通过向基板供给含氧气体来将氮化物层改变为氮氧化物层，源极气体比与惰性气体平行喷射惰性气体的情况更加强烈地喷射到基板的表面上 在通过喷嘴供给惰性气体或含氢气体时，清洗处理容器内部的基板。

公开(公告)号：US09039838B2

公开(公告)日：2015-05-26

申请号：US13553968

申请日：2012-07-20

申请人： Ryota Sasajima ,  Yoshiro Hirose ,  Yosuke Ota ,  Naonori Akae ,  Kojiro Yokozawa

发明人： Ryota Sasajima ,  Yoshiro Hirose ,  Yosuke Ota ,  Naonori Akae ,  Kojiro Yokozawa

IPC分类号： C23C16/54 ,  C23C16/56 ,  H01L21/02 ,  C23C16/40 ,  C23C16/455 ,  H01L21/314 ,  H01L21/316

CPC分类号： H01L21/0223 ,  C23C16/402 ,  C23C16/45546 ,  C23C16/54 ,  C23C16/56 ,  H01L21/02164 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/02186 ,  H01L21/02189 ,  H01L21/02238 ,  H01L21/02244 ,  H01L21/0228 ,  H01L21/02337 ,  H01L21/3141 ,  H01L21/31608 ,  H01L21/31645 ,  H01L21/32051 ,  H01L21/321

摘要： Provided is a substrate processing apparatus. The apparatus includes: a process vessel, a heater, a source gas supply system, an oxygen-containing gas supply system, a hydrogen-containing gas supply system, a pressure regulator, and a controller. The controller is configured to control the parts so as to perform: (a) forming an oxide film on a substrate by alternately repeating: (a-1) forming a layer by supplying a source gas into the process vessel accommodating the substrate; and (a-2) changing the layer into an oxide layer by supplying an oxygen-containing gas and an hydrogen-containing gas into the process vessel, the inside of the process vessel being under a heated atmosphere having a low pressure; and (b) modifying the oxide film formed on the substrate by supplying the oxygen-containing gas and the hydrogen-containing gas into the process vessel, the inside of the process vessel being under the heated atmosphere having the low pressure.

摘要翻译： 提供了一种基板处理装置。 该设备包括：处理容器，加热器，源气体供应系统，含氧气体供应系统，含氢气体供应系统，压力调节器和控制器。 所述控制器被配置为控制所述部件，以便执行以下操作：（a）通过交替地重复以下步骤：（a-1）通过将源气体供应到容纳所述基板的处理容器中而形成层，从而在基板上形成氧化膜; 和（a-2）通过向处理容器供给含氧气体和含氢气体将层改变为氧化物层，处理容器的内部处于低压的加热气氛下; 和（b）通过向处理容器供给含氧气体和含氢气体来改性在基板上形成的氧化膜，处理容器的内部处于低压的加热气氛下。

公开(公告)号：US08673790B2

公开(公告)日：2014-03-18

申请号：US13155997

申请日：2011-06-08

申请人： Naonori Akae ,  Yoshiro Hirose ,  Kotaro Murakami

发明人： Naonori Akae ,  Yoshiro Hirose ,  Kotaro Murakami

IPC分类号： H01L21/30

CPC分类号： H01L21/02167 ,  C23C16/4405 ,  C23C16/52 ,  H01L21/0228 ,  H01L21/31116 ,  H01L21/32135

摘要： A method of manufacturing a semiconductor device includes supplying a process gas into a process vessel accommodating a substrate to form a thin film on the substrate and supplying a cleaning gas into the process vessel to clean an inside of the process vessel, after the supplying the process gas to form the thin film is performed a predetermined number of times. When cleaning the inside of the process vessel, a fluorine-containing gas, an oxygen-containing gas and a hydrogen-containing gas are supplied as the cleaning gas into the process vessel heated and kept at a pressure less than an atmospheric pressure to remove a deposit including the thin film adhering to the inside of the process vessel through a thermochemical reaction.

摘要翻译： 一种制造半导体器件的方法包括：将处理气体供应到容纳衬底的处理容器中，以在衬底上形成薄膜，并在提供过程之后将清洁气体供应到处理容器中以清洁处理容器的内部 进行预定次数的形成薄膜的气体。 当清洁处理容器的内部时，将含氟气体，含氧气体和含氢气体作为清洁气体供应到加热并保持在低于大气压的压力下的处理容器中以除去 通过热化学反应沉积包括附着在处理容器内部的薄膜。

公开(公告)号：US08367557B2

公开(公告)日：2013-02-05

申请号：US12607223

申请日：2009-10-28

申请人： Naonori Akae ,  Yoshiro Hirose ,  Yushin Takasawa ,  Yosuke Ota

发明人： Naonori Akae ,  Yoshiro Hirose ,  Yushin Takasawa ,  Yosuke Ota

IPC分类号： H01L21/314 ,  H01L21/316 ,  H01L21/318

CPC分类号： H01L21/02164 ,  C23C16/45512 ,  C23C16/45525 ,  C23C16/45546 ,  C23C16/45574 ,  C23C16/45578 ,  H01L21/02211 ,  H01L21/0223 ,  H01L21/02238 ,  H01L21/02263 ,  H01L21/0228 ,  H01L21/02337 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/31612

摘要： A method of manufacturing a semiconductor device, the method comprising: forming an oxide film on a substrate by alternately repeating: (a) forming an element-containing layer on the substrate by supplying a source gas containing an element into a process vessel accommodating the substrate; and (b) changing the element-containing layer to an oxide layer by supplying an oxygen-containing gas and a hydrogen-containing gas into the process vessel having an inside pressure lower than atmospheric pressure, reacting the oxygen-containing gas with the hydrogen-containing gas to generate oxidizing species containing oxygen, and oxidizing the element-containing layer by the oxidizing species; wherein the hydrogen-containing gas is supplied into the process vessel together with the source gas in step (a).

摘要翻译： 一种制造半导体器件的方法，所述方法包括：通过交替地重复以下步骤，在衬底上形成氧化物膜：（a）通过将含有元素的源气体供应到容纳衬底的处理容器中而在衬底上形成含元素层 ; 和（b）通过向内压低于大气压的处理容器供给含氧气体和含氢气体将含元素层改变为氧化物层，使含氧气体与氢气气体反应， 含氧气体生成含氧的氧化物质，氧化物质氧化含元素层; 其中在步骤（a）中所述含氢气体与所述源气体一起供应到所述处理容器中。

公开(公告)号：US20120064733A1

公开(公告)日：2012-03-15

申请号：US13227312

申请日：2011-09-07

申请人： Ryota SASAJIMA ,  Yoshiro HIROSE ,  Naonori AKAE ,  Osamu KASAHARA

发明人： Ryota SASAJIMA ,  Yoshiro HIROSE ,  Naonori AKAE ,  Osamu KASAHARA

IPC分类号： H01L21/31 ,  H01L21/306

CPC分类号： C23C16/345 ,  C23C16/401 ,  C23C16/45527 ,  C23C16/56

摘要： Provided is a method of manufacturing a semiconductor device, including: forming a silicon oxide film on a surface of a substrate holder by repeatedly performing forming a silicon-containing layer on the surface of the substrate holder and oxidizing the silicon-containing layer; forming a thin film on a substrate by using a process gas; removing deposits attached onto the substrate holder by using a fluorine-containing gas; and reforming a silicon oxide film on the surface of the substrate holder after removal of the deposits by repeatedly performing forming a silicon-containing layer on the surface of the substrate holder and oxidizing the silicon-containing layer by using an oxygen-containing gas and a hydrogen-containing gas.

摘要翻译： 提供一种制造半导体器件的方法，包括：在衬底保持器的表面上重复地形成含硅层并氧化含硅层，在衬底保持器的表面上形成氧化硅膜; 通过使用工艺气体在衬底上形成薄膜; 通过使用含氟气体去除附着在基板支架上的沉积物; 以及通过在所述衬底保持器的表面上重复地形成含硅层并且通过使用含氧气体氧化所述含硅层并除去所述沉积物之后，在所述衬底保持器的表面上重整氧化硅膜 含氢气体。

公开(公告)号：US20110076857A1

公开(公告)日：2011-03-31

申请号：US12893311

申请日：2010-09-29

申请人： Naonori AKAE ,  Yoshiro HIROSE ,  Yushin TAKASAWA ,  Yosuke OTA ,  Ryota SASAJIMA

发明人： Naonori AKAE ,  Yoshiro HIROSE ,  Yushin TAKASAWA ,  Yosuke OTA ,  Ryota SASAJIMA

IPC分类号： H01L21/314 ,  H01L21/316 ,  H01L21/318

CPC分类号： H01L21/31608 ,  C23C16/32 ,  C23C16/34 ,  C23C16/401 ,  C23C16/45527 ,  C23C16/45546 ,  C23C16/45578 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/02189 ,  H01L21/0228 ,  H01L21/3141 ,  H01L21/3145 ,  H01L21/3185

摘要： Provided is a method of manufacturing a semiconductor device. The method includes: loading a substrate into a process vessel; performing a process to form an oxide, nitride, or oxynitride film on the substrate by alternately repeating: (a) forming a layer containing a predetermined element on the substrate by supplying and exhausting first and second source gases containing the element into and from the process vessel; and (b) changing the layer containing the element into an oxide, nitride, or oxynitride layer by supplying and exhausting reaction gas different from the first and second source gases into and from the process vessel; and unloading the substrate from the process vessel. The first source gas is more reactive than the second source gas, and an amount of the first source gas supplied into the process vessel is set to be less than that of the second source gas supplied into the process vessel.

摘要翻译： 提供一种制造半导体器件的方法。 该方法包括：将基底装载到处理容器中; 通过交替地重复以下步骤来执行在衬底上形成氧化物，氮化物或氧氮化物膜的工艺：（a）通过向包含该工艺的工艺中提供和排出含有该元件的第一和第二源气体而在衬底上形成含有预定元素的层 船只; 和（b）通过将不同于所述第一和第二源气体的反应气体进入和排出所述处理容器而将含有所述元素的层改变为氧化物，氮化物或氧氮化物层; 并从处理容器卸载基材。 第一源气体比第二源气体更具反应性，并且供给到处理容器中的第一源气体的量被设定为小于供给到处理容器中的第二源气体的量。

公开(公告)号：US09096928B2

公开(公告)日：2015-08-04

申请号：US13227312

申请日：2011-09-07

申请人： Ryota Sasajima ,  Yoshiro Hirose ,  Naonori Akae ,  Osamu Kasahara

发明人： Ryota Sasajima ,  Yoshiro Hirose ,  Naonori Akae ,  Osamu Kasahara

IPC分类号： H01L21/00 ,  C23C16/34 ,  C23C16/40 ,  C23C16/455 ,  C23C16/56

CPC分类号： C23C16/345 ,  C23C16/401 ,  C23C16/45527 ,  C23C16/56

摘要： Provided is a method of manufacturing a semiconductor device, including: forming a silicon oxide film on a surface of a substrate holder by repeatedly performing forming a silicon-containing layer on the surface of the substrate holder and oxidizing the silicon-containing layer; forming a thin film on a substrate by using a process gas; removing deposits attached onto the substrate holder by using a fluorine-containing gas; and reforming a silicon oxide film on the surface of the substrate holder after removal of the deposits by repeatedly performing forming a silicon-containing layer on the surface of the substrate holder and oxidizing the silicon-containing layer by using an oxygen-containing gas and a hydrogen-containing gas.

摘要翻译： 提供一种制造半导体器件的方法，包括：在衬底保持器的表面上重复地形成含硅层并氧化含硅层，在衬底保持器的表面上形成氧化硅膜; 通过使用工艺气体在衬底上形成薄膜; 通过使用含氟气体去除附着在基板支架上的沉积物; 以及通过在所述衬底保持器的表面上重复地形成含硅层并且通过使用含氧气体氧化所述含硅层并除去所述沉积物之后，在所述衬底保持器的表面上重整氧化硅膜 含氢气体。

公开(公告)号：US20110124204A1

公开(公告)日：2011-05-26

申请号：US12950340

申请日：2010-11-19

申请人： Yosuke Ota ,  Naonori Akae ,  Yushin Takasawa ,  Yoshiro Hirose

发明人： Yosuke Ota ,  Naonori Akae ,  Yushin Takasawa ,  Yoshiro Hirose

IPC分类号： H01L21/31 ,  C23C16/00

CPC分类号： H01L21/31608 ,  C23C16/402 ,  C23C16/45502 ,  C23C16/45546 ,  H01L21/02164 ,  H01L21/02181 ,  H01L21/02189 ,  H01L21/0228 ,  H01L21/28273 ,  H01L21/3141 ,  H01L21/31641 ,  H01L21/31645

摘要： A semiconductor device manufacturing method includes: forming a layer on a substrate by supplying source gas into a process vessel; changing the layer into an oxide layer by supplying gases containing oxygen and hydrogen into the process vessel heated and kept lower than atmospheric pressure; and forming an oxide film on the substrate by alternately repeating the forming of the layer and the changing of the layer while purging an inside of the process vessel therebetween. In the forming of the layer, the source gas is supplied toward the substrate through a nozzle at a side of the substrate, and inert or hydrogen-containing gas is supplied together with the source gas through the nozzle toward the substrate, such that the velocity of the source gas flowing parallel to the substrate is greater than the velocity of the inert gas flowing parallel to the substrate in the purging of the process vessel.

摘要翻译： 半导体器件制造方法包括：通过将源气体供应到处理容器中，在衬底上形成层; 通过向加热并保持低于大气压的处理容器中提供含有氧气和氢气的气体将层变成氧化物层; 以及通过交替重复所述层的形成和所述层的改变，同时清洗所述处理容器的内部，在所述基板上形成氧化膜。 在层的形成中，源气体通过衬底侧的喷嘴向基板供给，并且通过喷嘴将惰性或含氢气体与源气体一起供给基板，使得速度 平行于衬底流动的源气体的流量大于在处理容器清洗过程中平行于衬底流动的惰性气体的速度。

公开(公告)号：US20090170345A1

公开(公告)日：2009-07-02

申请号：US12318131

申请日：2008-12-22

申请人： Naonori Akae ,  Yoshiro Hirose

发明人： Naonori Akae ,  Yoshiro Hirose

IPC分类号： H01L21/443 ,  B05C11/00

CPC分类号： H01L21/022 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02238 ,  H01L21/02247 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02326 ,  H01L21/3141 ,  H01L21/3145 ,  H01L21/31612 ,  H01L21/3185

摘要： To form an insulating film with extremely low concentration of impurities such as carbon, hydrogen, nitrogen, chlorine, etc in a film. There are provided the steps of forming a specific element-containing layer on a substrate by supplying source gas containing a specific element into a processing container in which the substrate is accommodated; changing the specific element-containing layer into a nitride layer, by activating and supplying gas containing nitrogen into the processing container; and changing the nitride layer into an oxide layer or an oxynitride layer, by activating and supplying gas containing oxygen into the processing container; with this cycle set as one cycle and performed for at least one or more times.

摘要翻译： 在膜中形成具有极低浓度杂质如碳，氢，氮，氯等的绝缘膜。 提供了通过将含有特定元素的源气体供给到容纳基板的处理容器中而在基板上形成特定含有元素层的步骤; 通过将含氮气体活化并供给到处理容器中，将含特定元素的层改变成氮化物层; 以及通过激活和供应含氧气体到所述处理容器中来将所述氮化物层改变为氧化物层或氧氮化物层; 将该循环设置为一个循环并执行至少一次或多次。

公开(公告)号：US20090117714A1

公开(公告)日：2009-05-07

申请号：US12153043

申请日：2008-05-13

申请人： Naonori Akae ,  Yushin Takasawa

发明人： Naonori Akae ,  Yushin Takasawa

IPC分类号： H01L21/365

CPC分类号： H01L29/42332 ,  H01L21/02532 ,  H01L21/02573 ,  H01L21/0262 ,  H01L21/67167 ,  H01L21/6719 ,  H01L29/40114 ,  H01L29/7881

摘要： Disclosed is a method of producing a semiconductor device, comprising the steps of carrying a substrate with an insulating film formed on its surface into a processing chamber; processing the substrate to form silicon grains on the insulating film formed on the surface of the substrate by introducing at least a silicon-base gas into the processing chamber; and carrying the processed substrate out of the processing chamber, wherein in the processing step, a silicon-base gas and a dopant gas are introduced into the processing chamber with the temperature and the pressure inside the processing chamber being so controlled that, when the silicon-base gas is introduced singly, the silicon-base gas is not thermally decomposed under the controlled condition, in such a manner that the flow rate of the dopant gas could be equal to or more than the flow rate of the silicon-base gas.

摘要翻译： 公开了一种制造半导体器件的方法，包括以下步骤：将其表面上形成有绝缘膜的衬底运送到处理室中; 通过至少将硅基气体引入到处理室中，处理衬底以在形成在衬底表面上的绝缘膜上形成硅晶粒; 并将处理后的基板搬出处理室，其中在处理步骤中，硅基气体和掺杂剂气体被引入处理室中，处理室内的温度和压力被控制，使得当硅 碱性气体被单独引入，硅基气体在受控状态下不会被热分解，使得掺杂剂气体的流量可以等于或大于硅基气体的流量。