公开(公告)号：US08808563B2

公开(公告)日：2014-08-19

申请号：US13439079

申请日：2012-04-04

Applicant: Anchuan Wang ,  Jingchun Zhang ,  Nitin K. Ingle ,  Young S. Lee

Inventor： Anchuan Wang ,  Jingchun Zhang ,  Nitin K. Ingle ,  Young S. Lee

IPC: B44C1/22 ,  H01L21/3065 ,  H01J37/32 ,  H01L21/3213

CPC classification number: H01L21/3065 ,  H01J37/32357 ,  H01L21/3081 ,  H01L21/32137

Abstract: Methods of etching exposed silicon on patterned heterogeneous structures is described and includes a remote plasma etch formed from a fluorine-containing precursor and a hydrogen-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents react with the exposed regions of silicon. The plasmas effluents react with the patterned heterogeneous structures to selectively remove silicon while very slowly removing other exposed materials. The silicon selectivity results, in part, from a preponderance of hydrogen-containing precursor in the remote plasma which hydrogen terminates surfaces on the patterned heterogeneous structures. A much lower flow of the fluorine-containing precursor progressively substitutes fluorine for hydrogen on the hydrogen-terminated silicon thereby selectively removing silicon from exposed regions of silicon. The methods may be used to selectively remove silicon far faster than silicon oxide, silicon nitride and a variety of metal-containing materials.

Abstract translation: 描述了在图案化的异质结构上蚀刻暴露的硅的方法，并且包括由含氟前体和含氢前体形成的远程等离子体蚀刻。 来自远程等离子体的等离子体流出物流入衬底处理区域，其中等离子体流出物与暴露的硅区域反应。 等离子体流出物与图案化的异质结构反应以选择性地除去硅，同时非常缓慢地除去其它暴露的材料。 硅选择性部分地导致远离等离子体中含氢前体的优势，氢终止在图案化异质结构上的表面。 含氟前体的流速要低得多，在氢封端的硅上逐渐取代氟氢，从而从硅的暴露区域选择性除去硅。 这些方法可用于选择性地除去硅比氧化硅，氮化硅和各种含金属材料更快的硅。

公开(公告)号：US08647992B2

公开(公告)日：2014-02-11

申请号：US12974495

申请日：2010-12-21

Applicant: Jingmei Liang ,  Nitin K. Ingle

Inventor： Jingmei Liang ,  Nitin K. Ingle

IPC: H01L21/02 ,  H01J37/32 ,  C23C16/34 ,  C23C16/56

CPC classification number: H01L21/02164 ,  C23C16/345 ,  C23C16/56 ,  H01J37/32357 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/02326 ,  H01L21/02337

Abstract: Methods of forming silicon oxide layers are described. The methods include mixing a carbon-free silicon-containing precursor with a radical-nitrogen precursor, and depositing a silicon-and-nitrogen-containing layer on a substrate. The radical-nitrogen precursor is formed in a plasma by flowing a hydrogen-and-nitrogen-containing precursor into the plasma. Prior to depositing the silicon-and-nitrogen-containing layer, a silicon oxide liner layer is formed to improve adhesion, smoothness and flowability of the silicon-and-nitrogen-containing layer. The silicon-and-nitrogen-containing layer may be converted to a silicon-and-oxygen-containing layer by curing and annealing the film. Methods also include forming a silicon oxide liner layer before applying a spin-on silicon-containing material.

Abstract translation: 描述形成氧化硅层的方法。 所述方法包括将无碳的含硅前体与自由基 - 氮前体混合，并在基底上沉积含硅和氮的层。 通过使含氢和氮的前体流入等离子体，在等离子体中形成自由基 - 氮前体。 在沉积含硅和氮的层之前，形成氧化硅衬层以提高含硅和含氮层的粘附性，平滑性和流动性。 通过固化和退火膜可以将含硅和氮的层转化为含硅和氧的层。 方法还包括在施加旋涂的含硅材料之前形成氧化硅衬层。

公开(公告)号：US08563445B2

公开(公告)日：2013-10-22

申请号：US13024487

申请日：2011-02-10

Applicant: Jingmei Liang ,  Xiaolin Chen ,  DongQing Li ,  Nitin K. Ingle

Inventor： Jingmei Liang ,  Xiaolin Chen ,  DongQing Li ,  Nitin K. Ingle

IPC: H01L21/469

CPC classification number: H01L21/0217 ,  C23C16/345 ,  C23C16/452 ,  C23C16/56 ,  H01L21/02164 ,  H01L21/02271 ,  H01L21/02326 ,  H01L21/76837

Abstract: Methods, materials, and systems are described for forming conformal dielectric layers containing silicon and nitrogen (e.g., a silicon-nitrogen-hydrogen (Si—N—H) film) from a carbon-free silicon-and-nitrogen precursor and radical-nitrogen precursor. The carbon-free silicon-and-nitrogen precursor is predominantly excited by contact with the radical-nitrogen precursor. Because the silicon-and-nitrogen film is formed without carbon, the conversion of the film into hardened silicon oxide is done with less pore formation and less volume shrinkage. The deposited silicon-and-nitrogen-containing film may be wholly or partially converted to silicon oxide which allows the optical properties of the conformal dielectric layer to be selectable. The deposition of a thin silicon-and-nitrogen-containing film may be performed at low temperature to form a liner layer in a substrate trench. The low temperature liner layer has been found to improve the wetting properties and allows flowable films to more completely fill the trench.

Abstract translation: 描述了用于形成含有硅和氮的保形电介质层（例如，硅 - 氮 - 氢（Si-N-H）膜）的方法，材料和系统，其来自无碳硅氮前驱物和自由基 - 氮前体。 主要通过与自由基 - 氮前体接触激发无碳硅和氮前体。 由于硅和氮膜不形成碳，所以将薄膜转化成硬化的氧化硅是在较少的孔形成和较小的体积收缩下进行的。 沉积的含硅和氮的膜可以全部或部分地转化为氧化硅，这允许保形介电层的光学特性是可选择的。 可以在低温下进行薄的含硅和氮的膜的沉积，以在衬底沟槽中形成衬垫层。 已经发现低温衬里层改善了润湿性能，并允许可流动膜更完全地填充沟槽。

公开(公告)号：US20130217239A1

公开(公告)日：2013-08-22

申请号：US13589528

申请日：2012-08-20

Applicant: Abhijit Basu Mallick ,  Nitin K. Ingle

Inventor： Abhijit Basu Mallick ,  Nitin K. Ingle

IPC: H01L21/02

CPC classification number: H01L21/02274 ,  H01L21/02123 ,  H01L21/02167 ,  H01L21/02211 ,  H01L21/02271 ,  H01L21/02348 ,  H01L21/76837

Abstract: Methods are described for forming and curing a gapfill silicon-and-carbon-containing layer on a semiconductor substrate. The silicon and carbon constituents may come from a silicon-and-carbon-containing precursor excited by a radical hydrogen precursor that has been activated in a remote plasma region. Exemplary precursors include 1,3,5-trisilapentane (H3Si—CH2—SiH2—CH2—SiH3) as the silicon-and-carbon-containing precursor and hydrogen (H2) as the hydrogen-containing precursor. The hydrogen-containing precursor may also be a hydrocarbon, such as acetylene (C2H2) or ethylene (C2H4). The hydrogen-containing precursor is passed through a remote plasma region to form plasma effluents (the radical hydrogen precursor) which are flowed into the substrate processing region. When the silicon-and-carbon-containing precursor combines with the plasma effluents in the substrate processing region, they form a flowable silicon-carbon-and-hydrogen-containing layer on the semiconductor substrate.

Abstract translation: 描述了用于在半导体衬底上形成和固化间隙填充硅 - 和碳的层的方法。 硅和碳组分可以来自已经在远程等离子体区域中被激活的自由基氢前体激发的含硅和碳的前体。 示例性前体包括作为含硅和碳的前体的1,3,5-三硅烷（H3Si-CH2-SiH2-CH2-SiH3）和作为含氢前体的氢（H 2）。 含氢前体也可以是烃，如乙炔（C 2 H 2）或乙烯（C 2 H 4）。 含氢前体通过远程等离子体区域以形成流入衬底加工区域的等离子体流出物（自由基氢前体）。 当含硅和碳的前体与衬底加工区域中的等离子体流出物相结合时，它们在半导体衬底上形成可流动的含硅 - 碳和氢的层。

公开(公告)号：US20130045605A1

公开(公告)日：2013-02-21

申请号：US13448541

申请日：2012-04-17

Applicant: Yunyu Wang ,  Anchuan Wang ,  Jingchun Zhang ,  Nitin K. Ingle ,  Young S. Lee

Inventor： Yunyu Wang ,  Anchuan Wang ,  Jingchun Zhang ,  Nitin K. Ingle ,  Young S. Lee

IPC: H01L21/3065

CPC classification number: H01L21/3065 ,  H01L21/31116

Abstract: A method of etching exposed silicon-and-nitrogen-containing material on patterned heterogeneous structures is described and includes a remote plasma etch formed from a fluorine-containing precursor and an oxygen-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents react with the exposed regions of silicon-and-nitrogen-containing material. The plasmas effluents react with the patterned heterogeneous structures to selectively remove silicon-and-nitrogen-containing material from the exposed silicon-and-nitrogen-containing material regions while very slowly removing other exposed materials. The silicon-and-nitrogen-containing material selectivity results partly from the presence of an ion suppression element positioned between the remote plasma and the substrate processing region. The ion suppression element reduces or substantially eliminates the number of ionically-charged species that reach the substrate. The methods may be used to selectively remove silicon-and-nitrogen-containing material at more than twenty times the rate of silicon oxide.

Abstract translation: 描述了在图案化的异质结构上蚀刻暴露的含硅和氮的材料的方法，并且包括由含氟前体和含氧前体形成的远程等离子体蚀刻。 来自远程等离子体的等离子体流出物流入基板处理区域，其中等离子体流出物与含硅和氮的材料的暴露区域反应。 等离子体流出物与图案化的异质结构反应，从暴露的含硅和氮的材料区域中选择性地除去含硅和氮的材料，同时非常缓慢地除去其它暴露的材料。 含氮和氮的材料的选择性部分取决于位于远程等离子体和衬底处理区域之间的离子抑制元件的存在。 离子抑制元件减少或基本消除了到达衬底的离子充电物质的数量。 该方法可用于以超过二氧化硅速率的二十倍来选择性地除去含硅和氮的材料。

公开(公告)号：US08304351B2

公开(公告)日：2012-11-06

申请号：US12972711

申请日：2010-12-20

Applicant: Linlin Wang ,  Abhijit Basu Mallick ,  Nitin K. Ingle ,  Shankar Venkataraman

Inventor： Linlin Wang ,  Abhijit Basu Mallick ,  Nitin K. Ingle ,  Shankar Venkataraman

IPC: H01L21/31 ,  H01L21/469

CPC classification number: H01L21/0217 ,  C23C16/345 ,  C23C16/452 ,  C23C16/56 ,  H01J37/32357 ,  H01L21/02164 ,  H01L21/022 ,  H01L21/02274 ,  H01L21/02326 ,  H01L21/02337 ,  H01L21/0234

Abstract: Methods of forming a dielectric layer are described. The methods include the steps of mixing a silicon-containing precursor with a plasma effluent, and depositing a silicon-and-nitrogen-containing layer on a substrate. The silicon-and-nitrogen-containing layer is converted to a silicon-and-oxygen-containing layer by curing in an ozone-containing atmosphere in the same substrate processing region used for depositing the silicon-and-nitrogen-containing layer. Another silicon-and-nitrogen-containing layer may be deposited on the silicon-and-oxygen-containing layer and the stack of layers may again be cured in ozone all without removing the substrate from the substrate processing region. After an integral multiple of dep-cure cycles, the conversion of the stack of silicon-and-oxygen-containing layers may be annealed at a higher temperature in an oxygen-containing environment.

Abstract translation: 描述形成电介质层的方法。 所述方法包括以下步骤：将含硅前体与等离子体流出物混合，并在基底上沉积含硅和氮的层。 通过在用于沉积含硅和含氮层的相同基板处理区域中的含臭氧的气氛中固化，将含硅和含氮层转化为含硅和氧的层。 可以在含硅和氧的层上沉积另外的含硅和含氮层，并且层叠层可以再次在臭氧中固化而不从衬底处理区移除衬底。 在去固化循环的整数倍之后，可以在含氧环境中的较高温度下退火含硅和氧层层的转化。

公开(公告)号：US20120269989A1

公开(公告)日：2012-10-25

申请号：US13237131

申请日：2011-09-20

Applicant: Jingmei Liang ,  Nitin K. Ingle ,  Sukwon Hong ,  Anjana M. Patel

Inventor： Jingmei Liang ,  Nitin K. Ingle ,  Sukwon Hong ,  Anjana M. Patel

IPC: C23C16/40 ,  C23C16/56 ,  C23C16/50

CPC classification number: C23C16/345 ,  C23C16/56

Abstract: A method of forming a silicon oxide layer is described. The method first deposits a silicon-nitrogen-and-hydrogen-containing (polysilazane) film by radical-component chemical vapor deposition (CVD). The polysilazane film is converted to silicon oxide by exposing the polysilazane film to humidity at low substrate temperature. The polysilazane film may also be dipped in a liquid having both oxygen and hydrogen, such as water, hydrogen peroxide and or ammonium hydroxide. These conversion techniques may be used separately or in a sequential combination. Conversion techniques described herein hasten conversion, produce manufacturing-worthy films and remove the requirement of a high temperature oxidation treatment. An ozone treatment may precede the conversion technique(s).

Abstract translation: 描述形成氧化硅层的方法。 该方法首先通过自由基组分化学气相沉积（CVD）沉积含硅氮和氢的（聚硅氮烷）膜。 通过将聚硅氮烷膜暴露于低底物温度下的湿度，将聚硅氮烷膜转化为氧化硅。 聚硅氮烷膜也可以浸渍在具有氧和氢的液体中，例如水，过氧化氢和/或氢氧化铵。 这些转化技术可以单独使用或以顺序组合使用。 本文所述的转化技术加速转化，产生制造有价值的膜并去除高温氧化处理的要求。 臭氧处理可以在转化技术之前。

公开(公告)号：US20120238108A1

公开(公告)日：2012-09-20

申请号：US13227161

申请日：2011-09-07

Applicant: Xiaolin Chen ,  Jingmei Liang ,  Nitin K. Ingle ,  Shankar Venkataraman

Inventor： Xiaolin Chen ,  Jingmei Liang ,  Nitin K. Ingle ,  Shankar Venkataraman

IPC: H01L21/316

CPC classification number: H01L21/02164 ,  C23C16/345 ,  C23C16/56 ,  H01L21/02219 ,  H01L21/02326 ,  H01L21/02337 ,  H01L21/0234 ,  H01L21/31111

Abstract: A method of forming a silicon oxide layer is described. The method increases the oxygen content of a dielectric layer by curing the layer in a two-step ozone cure. The first step involves exposing the dielectric layer to ozone while the second step involves exposing the dielectric layer to ozone excited by a local plasma. This sequence can reduce or eliminate the need for a subsequent anneal following the cure step. The two-step ozone cures may be applied to silicon-and-nitrogen-containing film to convert the films to silicon oxide.

Abstract translation: 描述形成氧化硅层的方法。 该方法通过在两步臭氧固化中固化该层来增加电介质层的氧含量。 第一步涉及将介电层暴露于臭氧，而第二步涉及将电介质层暴露于由局部等离子体激发的臭氧。 该顺序可以减少或消除在固化步骤之后的后续退火的需要。 两步臭氧治疗可以应用于含硅和氮的膜以将膜转化为氧化硅。

公开(公告)号：US08012887B2

公开(公告)日：2011-09-06

申请号：US12489234

申请日：2009-06-22

Applicant: Shankar Venkataraman ,  Hiroshi Hamana ,  Manuel A. Hernandez ,  Nitin K. Ingle ,  Paul Edward Gee

Inventor： Shankar Venkataraman ,  Hiroshi Hamana ,  Manuel A. Hernandez ,  Nitin K. Ingle ,  Paul Edward Gee

IPC: H01L21/31 ,  C23C16/00

CPC classification number: H01L21/31612 ,  C23C16/401 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/02216 ,  H01L21/02222 ,  H01L21/02271 ,  H01L21/76224

Abstract: Methods of depositing silicon oxide layers on substrates involve flowing a silicon-containing precursor, an oxidizing gas, water and an additive precursor into a processing chamber such that a uniform silicon oxide growth rate is achieved across the substrate surface. The surface of silicon oxide layers grown according to embodiments may have a reduced roughness when grown with the additive precursor. In other aspects of the disclosure, silicon oxide layers are deposited on a patterned substrate with trenches on the surface by flowing a silicon-containing precursor, an oxidizing gas, water and an additive precursor into a processing chamber such that the trenches are filled with a reduced quantity and/or size of voids within the silicon oxide filler material.

Abstract translation: 在衬底上沉积氧化硅层的方法包括使含硅前体，氧化气体，水和添加剂前体流入处理室，使得在衬底表面上实现均匀的氧化硅生长速率。 根据实施例生长的氧化硅层的表面可以在与添加剂前体一起生长时具有减小的粗糙度。 在本公开的其他方面中，通过使含硅前体，氧化气体，水和添加剂前体流入处理室，将硅氧化物层沉积在具有表面上的沟槽的图案化衬底上，使得沟槽填充有 氧化硅填充材料内的空隙的数量和/或尺寸减小。

公开(公告)号：US07939422B2

公开(公告)日：2011-05-10

申请号：US11947674

申请日：2007-11-29

Applicant: Nitin K. Ingle ,  Jing Tang ,  Yi Zheng ,  Zheng Yuan ,  Zhenbin Ge ,  Xinliang Lu ,  Chien-Teh Kao ,  Vikash Banthia ,  William H. McClintock ,  Mei Chang

Inventor： Nitin K. Ingle ,  Jing Tang ,  Yi Zheng ,  Zheng Yuan ,  Zhenbin Ge ,  Xinliang Lu ,  Chien-Teh Kao ,  Vikash Banthia ,  William H. McClintock ,  Mei Chang

IPC: H01L21/76

CPC classification number: H01L21/67253 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/3105 ,  H01L21/31116 ,  H01L21/76232

Abstract: A method for forming a semiconductor structure includes forming a plurality of features across a surface of a substrate, with at least one space being between two adjacent features. A first dielectric layer is formed on the features and within the at least one space. A portion of the first dielectric layer interacts with a reactant derived from a first precursor and a second precursor to form a first solid product. The first solid product is decomposed to substantially remove the portion of the first dielectric layer. A second dielectric layer is formed to substantially fill the at least one space.

Abstract translation: 一种用于形成半导体结构的方法包括跨越衬底的表面形成多个特征，其中至少一个空间位于两个相邻特征之间。 第一电介质层形成在特征上并且在至少一个空间内。 第一介电层的一部分与衍生自第一前体和第二前体的反应物相互作用以形成第一固体产物。 第一固体产物被分解以基本上除去第一介电层的部分。 形成第二电介质层以基本上填充至少一个空间。