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    ORGANIC THIN FILM TRANSISTOR, PRODUCTION METHOD THEREOF, AND ELECTRONIC DEVICE
    1.
    发明申请
    ORGANIC THIN FILM TRANSISTOR, PRODUCTION METHOD THEREOF, AND ELECTRONIC DEVICE 审中-公开
    有机薄膜晶体管，其制造方法和电子器件

    公开(公告)号：US20130005120A1

    公开(公告)日：2013-01-03

    申请号：US13610964

    申请日：2012-09-12

    申请人： Kazumasa Nomoto ,  Nobuhide Yoneya ,  Takahiro Ohe

    发明人： Kazumasa Nomoto ,  Nobuhide Yoneya ,  Takahiro Ohe

    IPC分类号： H01L51/40

    CPC分类号： H01L51/0021 ,  H01L51/052 ,  H01L51/0541 ,  H01L51/0545 ,  H01L51/105

    摘要： An organic thin film transistor including a substrate with an organic insulating layer; a source and drain electrode layer electro deposited on the substrate; a second metal material source and drain electrode layer covering the first layer, the metal material capable of forming an ohmic contact with an organic semiconductor material lower than the first layer; and an organic semiconductor layer over a region between the source electrode and the drain electrode

    摘要翻译： 一种有机薄膜晶体管，包括具有有机绝缘层的衬底; 电沉积在基底上的源极和漏极电极层; 覆盖第一层的第二金属材料源极和漏极电极层，能够与低于第一层的有机半导体材料形成欧姆接触的金属材料; 以及在源电极和漏电极之间的区域上的有机半导体层

    DISPLAY APPARATUS
    2.
    发明申请
    DISPLAY APPARATUS 有权
    显示设备

    公开(公告)号：US20120250139A1

    公开(公告)日：2012-10-04

    申请号：US13419859

    申请日：2012-03-14

    申请人： Hironobu Abe ,  Nobuhide Yoneya

    发明人： Hironobu Abe ,  Nobuhide Yoneya

    IPC分类号： G02F1/167

    CPC分类号： G02F1/167 ,  F04B19/006 ,  G02B26/0841 ,  G02F1/1343 ,  G03G17/04 ,  H04N5/7425

    摘要： Disclosed herein is a display apparatus including first and second substrates, at least one of which has a light transmitting characteristic, as well as first and second electrodes provided on the two mutually facing surfaces of the first and second substrates respectively; and an electrophoretic device provided between the first and second substrates, wherein the first substrate and the first electrode each have an external edge folded back so as to cover at least a portion of a terminal surface of the second substrate.

    摘要翻译： 本文公开了一种显示装置，包括分别具有透光特性的第一和第二基板以及设置在第一和第二基板的两个相互面对的表面上的第一和第二电极; 以及设置在所述第一和第二基板之间的电泳装置，其中所述第一基板和所述第一电极各自具有折回的外部边缘，以便覆盖所述第二基板的端子表面的至少一部分。

    SEMICONDUCTOR DEVICE, PRODUCTION METHOD OF SEMICONDUCTOR DEVICE, DISPLAY DEVICE, AND ELECTRONIC EQUIPMENT
    3.
    发明申请
    SEMICONDUCTOR DEVICE, PRODUCTION METHOD OF SEMICONDUCTOR DEVICE, DISPLAY DEVICE, AND ELECTRONIC EQUIPMENT 有权
    半导体器件，半导体器件的制造方法，显示器件和电子设备

    公开(公告)号：US20100271353A1

    公开(公告)日：2010-10-28

    申请号：US12762030

    申请日：2010-04-16

    申请人： Nobuhide Yoneya

    发明人： Nobuhide Yoneya

    IPC分类号： G06F3/038 ,  H01L51/10 ,  H01L51/40 ,  H01L51/50

    CPC分类号： H01L27/283 ,  G02F1/1368 ,  G02F2001/136231 ,  H01L27/3274 ,  H01L51/0508

    摘要： A semiconductor device includes first layer wiring including a gate electrode mounted on a substrate; a gate insulating film having an opening that exposes part of the first layer wiring and covering the entire surface of the substrate including the gate electrode; second layer wiring including a source electrode and a drain electrode mounted on the gate insulating film; an insulating partition layer having a first opening that exposes an edge between the source electrode and the drain electrode and a part of the gate insulating film between the source electrode and the drain electrode and a second opening that is aligned with the opening formed in the gate insulating film; and an organic semiconductor layer disposed across the source electrode and the drain electrode at the bottom surface of the first opening formed in the partition layer.

    摘要翻译： 半导体器件包括：第一层布线，其包括安装在基板上的栅电极; 栅极绝缘膜，具有露出所述第一层布线的一部分并覆盖包括所述栅电极的所述基板的整个表面的开口; 第二层布线，包括安​​装在栅极绝缘膜上的源电极和漏电极; 绝缘分隔层，其具有露出源电极和漏电极之间的边缘的第一开口和源电极和漏电极之间的栅极绝缘膜的一部分，以及与形成在栅极中的开口对准的第二开口 绝缘膜; 以及在形成在分隔层中的第一开口的底面上的源极电极和漏极电极之间设置的有机半导体层。

    Semiconductor device with bottom gate organic thin-film transistor, and display device and electronic equipment with same
    5.
    发明授权
    Semiconductor device with bottom gate organic thin-film transistor, and display device and electronic equipment with same 有权
    具有底栅有机薄膜晶体管的半导体器件，以及与其相同的显示器件和电子设备

    公开(公告)号：US08847207B2

    公开(公告)日：2014-09-30

    申请号：US12762030

    申请日：2010-04-16

    申请人： Nobuhide Yoneya

    发明人： Nobuhide Yoneya

    IPC分类号： H01L51/00

    CPC分类号： H01L27/283 ,  G02F1/1368 ,  G02F2001/136231 ,  H01L27/3274 ,  H01L51/0508

    摘要： A semiconductor device includes first layer wiring including a gate electrode mounted on a substrate; a gate insulating film having an opening that exposes part of the first layer wiring and covering the entire surface of the substrate including the gate electrode; second layer wiring including a source electrode and a drain electrode mounted on the gate insulating film; an insulating partition layer having a first opening that exposes an edge between the source electrode and the drain electrode and a part of the gate insulating film between the source electrode and the drain electrode and a second opening that is aligned with the opening formed in the gate insulating film; and an organic semiconductor layer disposed across the source electrode and the drain electrode at the bottom surface of the first opening formed in the partition layer.

    摘要翻译： 半导体器件包括：第一层布线，包括安​​装在基板上的栅电极; 栅极绝缘膜，具有露出所述第一层布线的一部分并覆盖包括所述栅电极的所述基板的整个表面的开口; 第二层布线，包括安​​装在栅极绝缘膜上的源电极和漏电极; 绝缘分隔层，其具有露出源电极和漏电极之间的边缘的第一开口和源电极和漏电极之间的栅极绝缘膜的一部分，以及与形成在栅极中的开口对准的第二开口 绝缘膜; 以及在形成在分隔层中的第一开口的底面上的源极电极和漏极电极之间设置的有机半导体层。

    Display apparatus
    6.
    发明授权
    Display apparatus 有权
    显示装置

    公开(公告)号：US08705164B2

    公开(公告)日：2014-04-22

    申请号：US13419859

    申请日：2012-03-14

    申请人： Hironobu Abe ,  Nobuhide Yoneya

    发明人： Hironobu Abe ,  Nobuhide Yoneya

    IPC分类号： G02F1/167 ,  F04B19/00 ,  G02B26/08 ,  H04N5/74 ,  G03G17/04

    CPC分类号： G02F1/167 ,  F04B19/006 ,  G02B26/0841 ,  G02F1/1343 ,  G03G17/04 ,  H04N5/7425

    摘要： Disclosed herein is a display apparatus including first and second substrates, at least one of which has a light transmitting characteristic, as well as first and second electrodes provided on the two mutually facing surfaces of the first and second substrates respectively; and an electrophoretic device provided between the first and second substrates, wherein the first substrate and the first electrode each have an external edge folded back so as to cover at least a portion of a terminal surface of the second substrate.

    摘要翻译： 本文公开了一种显示装置，包括分别具有透光特性的第一和第二基板以及设置在第一和第二基板的两个相互面对的表面上的第一和第二电极; 以及设置在所述第一和第二基板之间的电泳装置，其中所述第一基板和所述第一电极各自具有折回的外部边缘，以便覆盖所述第二基板的端子表面的至少一部分。

    THIN FILM TRANSISTOR AND METHOD FOR PRODUCING THE SAME
    8.
    发明申请
    THIN FILM TRANSISTOR AND METHOD FOR PRODUCING THE SAME 有权
    薄膜晶体管及其制造方法

    公开(公告)号：US20120199836A1

    公开(公告)日：2012-08-09

    申请号：US13448969

    申请日：2012-04-17

    申请人： Mao Katsuhara ,  Nobuhide Yoneya

    发明人： Mao Katsuhara ,  Nobuhide Yoneya

    IPC分类号： H01L51/52 ,  H01L51/10

    CPC分类号： H01L27/3274 ,  B82Y10/00 ,  H01L51/0011 ,  H01L51/0017 ,  H01L51/0021 ,  H01L51/0023 ,  H01L51/0035 ,  H01L51/0036 ,  H01L51/004 ,  H01L51/0046 ,  H01L51/0048 ,  H01L51/0052 ,  H01L51/0078 ,  H01L51/0545 ,  H01L51/102 ,  H01L51/105

    摘要： The present invention provides a method of manufacturing a thin film transistor of a top-contact structure with suppressed deterioration by a process which is easy and suitable for increase in area without damaging an organic semiconductor pattern. The organic semiconductor pattern is formed on a substrate. An electrode material film is formed on the substrate so as to cover the organic semiconductor pattern. A resist pattern is formed on the electrode material film. By wet etching using the resist pattern as a mask, the electrode material film is patterned. By the process, a source electrode and a drain electrode are formed.

    摘要翻译： 本发明提供一种通过易于适用于增加面积而不损坏有机半导体图案的方法来制造具有抑制劣化的顶部接触结构的薄膜晶体管的方法。 有机半导体图案形成在基板上。 在基板上形成电极材料膜以覆盖有机半导体图案。 在电极材料膜上形成抗蚀剂图案。 通过使用抗蚀剂图案作为掩模的湿蚀刻，对电极材料膜进行图案化。 通过该过程，形成源电极和漏电极。

    THIN FILM TRANSISTOR AND METHOD FOR PRODUCING THE SAME
    9.
    发明申请
    THIN FILM TRANSISTOR AND METHOD FOR PRODUCING THE SAME 有权
    薄膜晶体管及其制造方法

    公开(公告)号：US20100219402A1

    公开(公告)日：2010-09-02

    申请号：US12627434

    申请日：2009-11-30

    申请人： Mao Katsuhara ,  Nobuhide Yoneya

    发明人： Mao Katsuhara ,  Nobuhide Yoneya

    IPC分类号： H01L51/10 ,  H01L51/40 ,  H01L29/772

    CPC分类号： H01L27/3274 ,  B82Y10/00 ,  H01L51/0011 ,  H01L51/0017 ,  H01L51/0021 ,  H01L51/0023 ,  H01L51/0035 ,  H01L51/0036 ,  H01L51/004 ,  H01L51/0046 ,  H01L51/0048 ,  H01L51/0052 ,  H01L51/0078 ,  H01L51/0545 ,  H01L51/102 ,  H01L51/105

    摘要： The present invention provides a method of manufacturing a thin film transistor of a top-contact structure with suppressed deterioration by a process which is easy and suitable for increase in area without damaging an organic semiconductor pattern. The organic semiconductor pattern is formed on a substrate. An electrode material film is formed on the substrate so as to cover the organic semiconductor pattern. A resist pattern is formed on the electrode material film. By wet etching using the resist pattern as a mask, the electrode material film is patterned. By the process, a source electrode and a drain electrode are formed.

    摘要翻译： 本发明提供一种通过易于适用于增加面积而不损坏有机半导体图案的方法来制造具有抑制劣化的顶部接触结构的薄膜晶体管的方法。 有机半导体图案形成在基板上。 在基板上形成电极材料膜以覆盖有机半导体图案。 在电极材料膜上形成抗蚀剂图案。 通过使用抗蚀剂图案作为掩模的湿蚀刻，对电极材料膜进行图案化。 通过该过程，形成源电极和漏电极。