公开(公告)号：US06555504B1

公开(公告)日：2003-04-29

申请号：US09673256

申请日：2000-10-25

申请人： Naoki Ayai ,  Nobuhiro Saga ,  Kazuhiko Hayashi

发明人： Naoki Ayai ,  Nobuhiro Saga ,  Kazuhiko Hayashi

IPC分类号： H01L3924

CPC分类号： H01L39/248 ,  H01B12/10 ,  H01F2027/2819 ,  H01L39/143 ,  Y02E40/644

摘要： An oxide superconducting wire includes oxide superconducting filaments 1, a matrix 2, a covering layer 3, and an insulating layer 4. The matrix 2 is placed so as to enclose the oxide superconducting filaments 1 and is made of silver. The covering layer 3 is placed so as to enclose the matrix 2, contains silver and manganese, and has a thickness of 10 &mgr;m to 50 &mgr;m. The insulating layer 4 is placed so as to enclose the covering layer 3.

摘要翻译： 氧化物超导线包括氧化物超导细丝1，基体2，覆盖层3和绝缘层4.基体2被放置成包围氧化物超导细丝1并由银制成。 将覆盖层3放置成包围基体2，包含银和锰，并且具有10μm〜50μm的厚度。 绝缘层4被放置成包围覆盖层3。

公开(公告)号：US06192573B1

公开(公告)日：2001-02-27

申请号：US09055287

申请日：1998-04-06

申请人： Shuji Hahakura ,  Nobuhiro Saga ,  Kazuya Ohmatsu ,  Kenichi Sato

发明人： Shuji Hahakura ,  Nobuhiro Saga ,  Kazuya Ohmatsu ,  Kenichi Sato

IPC分类号： H01L3924

CPC分类号： H01L39/248 ,  H01B12/02 ,  H01B12/10 ,  H01L39/143 ,  Y02E40/641 ,  Y02E40/644 ,  Y10S505/704 ,  Y10T29/49014

摘要： An oxide superconducting wire having a circular or substantially circular sectional shape and exhibiting a high critical current density comparable to that of a tape-shaped wire is provided. The oxide superconducting wire consists of a plurality of filaments extending along the longitudinal direction of the wire in the form of ribbons, and a stabilizer matrix covering the filaments. The aspect ratio of the width to the thickness of each filament is 4 to 40, and the thickness of each filament is 5 to 50 &mgr;m. A section of the wire is in a circular or substantially circular shape. The wire exhibits a critical current density of at least 2000 A/cm2 at a temperature of 77 K with no application of a magnetic field. It is preferable that the plurality of filaments are substantially rotation-symmetrically arranged with respect to the center of the wire. It is also preferable that a hexagonal-prismatic stabilizing matrix is provided at the center of the wire and the plurality of filaments covered with the stabilizer matrix are arranged on each side surface thereof in a layered manner. A flat stranded wire having low ac loss can be formed by such wires.

摘要翻译： 提供了一种具有圆形或基本上圆形截面形状并具有与带状线相当的临界电流密度的氧化物超导线。 氧化物超导线由沿着丝条的纵向方向延伸的多根细丝和带状的覆盖长丝的稳定剂基体组成。 每个灯丝的宽度与厚度的纵横比为4〜40，每根灯丝的厚度为5〜50μm。 线的一部分为圆形或大致圆形。 该线在77K的温度下表现出至少2000A / cm 2的临界电流密度，而不施加磁场。 优选地，所述多根细丝相对于所述线的中心基本上旋转对称地排列。 另外，优选的是，六边形棱柱形稳定基体设置在线的中心，并且以其分层的方式在其每个侧表面上布置有被稳定剂基体覆盖的多根细丝。 通过这样的导线可以形成具有低交流损耗的扁平绞线。

公开(公告)号：US06469253B1

公开(公告)日：2002-10-22

申请号：US08632229

申请日：1996-04-15

申请人： Nobuhiro Saga ,  Kazuhiko Hayashi ,  Kenichi Sato

发明人： Nobuhiro Saga ,  Kazuhiko Hayashi ,  Kenichi Sato

IPC分类号： H01B1200

CPC分类号： H01L39/143 ,  H01L39/248

摘要： The present invention relates to an oxide superconducting wire. The wire has a filament made essentially of an oxide superconductor, and a stabilizing metal covering the oxide superconductor. The stabilizing metal includes a silver alloy having at least either higher mechanical strength or higher specific electrical resistance than that of silver. In one embodiment, the stabilizing metal further includes a first portion directly covering the oxide superconductor and a second portion covering the first portion. The first portion is adapted to prevent the component of the second portion from diffusing into and reacting with the oxide superconductor. The first and second portions have different materials, and the first portion is made essentially of an Ag—Sb alloy. In another embodiment, the stabilizing metal further has a first portion directly covering the oxide superconductor, a second portion covering the first portion and a third portion covering the second portion. The first portion is made essentially of silver or Ag—Sb alloy. The second portion is made essentially of silver or Ag—Sb alloy. The third portion has a different material with respect to the second portion.

摘要翻译： 本发明涉及一种氧化物超导线。 导线具有基本上由氧化物超导体制成的长丝和覆盖氧化物超导体的稳定金属。 稳定金属包括具有比银更高的机械强度或更高的比电阻的银合金。 在一个实施例中，稳定金属还包括直接覆盖氧化物超导体的第一部分和覆盖第一部分的第二部分。 第一部分适于防止第二部分的部件扩散到氧化物超导体中并与氧化物超导体反应。 第一和第二部分具有不同的材料，第一部分基本上由Ag-Sb合金制成。 在另一个实施例中，稳定金属还具有直接覆盖氧化物超导体的第一部分，覆盖第一部分的第二部分和覆盖第二部分的第三部分。 第一部分基本上由银或Ag-Sb合金制成。 第二部分基本上由银或Ag-Sb合金制成。 第三部分相对于第二部分具有不同的材料。

公开(公告)号：US20110158277A1

公开(公告)日：2011-06-30

申请号：US12837847

申请日：2010-07-16

申请人： Yusuke YOSHIZUMI ,  Yohei ENYA ,  Takashi KYONO ,  Takamichi SUMITOMO ,  Nobuhiro SAGA ,  Masahiro ADACHI ,  Kazuhide SUMIYOSHI ,  Shinji TOKUYAMA ,  Shimpei TAKAGI ,  Takatoshi IKEGAMI ,  Masaki UENO ,  Koji KATAYAMA

发明人： Yusuke YOSHIZUMI ,  Yohei ENYA ,  Takashi KYONO ,  Takamichi SUMITOMO ,  Nobuhiro SAGA ,  Masahiro ADACHI ,  Kazuhide SUMIYOSHI ,  Shinji TOKUYAMA ,  Shimpei TAKAGI ,  Takatoshi IKEGAMI ,  Masaki UENO ,  Koji KATAYAMA

IPC分类号： H01S5/343 ,  H01L21/304 ,  H01L33/06

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01S5/0202 ,  H01S5/0207 ,  H01S5/2201 ,  H01S5/3202

摘要： A III-nitride semiconductor laser device is provided with a laser structure and an electrode. The laser structure includes a support base which comprises a hexagonal III-nitride semiconductor and has a semipolar primary surface, and a semiconductor region provided on the semipolar primary surface. The electrode is provided on the semiconductor region. The semiconductor region includes a first cladding layer of a first conductivity type GaN-based semiconductor, a second cladding layer of a second conductivity type GaN-based semiconductor, and an active layer provided between the first cladding layer and the second cladding layer. The laser structure includes first and second fractured faces intersecting with an m-n plane defined by the m-axis of the hexagonal III-nitride semiconductor and an axis normal to the semipolar primary surface. A laser cavity of the III-nitride semiconductor laser device includes the first and second fractured faces. An angle ALPHA between the normal axis and the c-axis of the hexagonal III-nitride semiconductor is in the range of not less than 45 degrees and not more than 80 degrees or in the range of not less than 100 degrees and not more than 135 degrees. The laser structure includes a laser waveguide extending above the semipolar primary surface, and the laser waveguide extends in a direction of a waveguide vector directed from one to another of the first and second fractured faces. A c-axis vector indicating a direction of the c-axis of the hexagonal III-nitride semiconductor includes a projected component parallel to the semipolar primary surface and a vertical component parallel to the normal axis. An angle difference between the waveguide vector and the projected component is in the range of not less than −0.5 degrees and not more than +0.5 degrees.

摘要翻译： III族氮化物半导体激光器件具有激光结构和电极。 激光器结构包括支撑基底，其包括六边形III族氮化物半导体并且具有半极性主表面，以及设置在半极性主表面上的半导体区域。 电极设置在半导体区域上。 半导体区域包括第一导电型GaN基半导体的第一包层，第二导电型GaN基半导体的第二包层和设置在第一包层和第二包层之间的有源层。 激光结构包括与由六边形III族氮化物半导体的m轴和垂直于半极性主表面的轴定义的m-n平面相交的第一和第二断裂面。 III族氮化物半导体激光器件的激光腔包括第一和第二断裂面。 六边形III族氮化物半导体的法线和c轴之间的角度ALPHA在不小于45度且不超过80度的范围内或在不小于100度且不超过135度的范围内 度。 激光器结构包括在半极性主表面上方延伸的激光波导，并且激光波导沿着从第一和第二断裂面的一个引导到另一个的波导矢量的方向延伸。 指示六边形III族氮化物半导体的c轴方向的c轴向量包括平行于半极性主表面的投影分量和平行于法线轴的垂直分量。 波导矢量和投射分量之间的角度差在不小于-0.5度且不超过+0.5度的范围内。

公开(公告)号：US06566609B2

公开(公告)日：2003-05-20

申请号：US09954577

申请日：2001-09-18

申请人： Jun Fujikami ,  Nobuhiro Saga ,  Kazuya Ohmatsu ,  Kenichi Sato

发明人： Jun Fujikami ,  Nobuhiro Saga ,  Kazuya Ohmatsu ,  Kenichi Sato

IPC分类号： H01B1200

CPC分类号： H01F6/06 ,  C23C26/00 ,  C23C30/00 ,  H01L39/143 ,  H01L39/248 ,  Y10S505/701 ,  Y10S505/702 ,  Y10S505/703 ,  Y10S505/704 ,  Y10T29/49014

摘要： Provided are an oxide superconducting wire which maintains a high critical current density and has a small current drift with small ac loss when the same carries an alternating current and a method of preparing the same, and a cable conductor which is formed by assembling such oxide superconducting wires. The oxide superconducting wire is a flat-molded stranded wire which is formed by twisting a plurality of metal-coated strands consisting of an oxide superconductor, and is characterized in that the flat-molded stranded wire has a rectangular sectional shape, and a section of each strand forming the flat-molded stranded wire has an aspect ratio (W1/T1) of at least 2. The method of preparing this oxide superconducting wire comprises the steps of preparing a stranded wire by twisting a plurality of strands, each of which is formed by metal-coating an oxide superconductor or raw material powder therefor, flat-molding the prepared stranded wire, and repeating rolling and a heat treatment of at least 800° C. on the flat molded stranded wire a plurality of times.

公开(公告)号：US08507305B2

公开(公告)日：2013-08-13

申请号：US13443480

申请日：2012-04-10

申请人： Yusuke Yoshizumi ,  Yohei Enya ,  Takashi Kyono ,  Takamichi Sumitomo ,  Nobuhiro Saga ,  Masahiro Adachi ,  Kazuhide Sumiyoshi ,  Shinji Tokuyama ,  Shimpei Takagi ,  Takatoshi Ikegami ,  Masaki Ueno ,  Koji Katayama

发明人： Yusuke Yoshizumi ,  Yohei Enya ,  Takashi Kyono ,  Takamichi Sumitomo ,  Nobuhiro Saga ,  Masahiro Adachi ,  Kazuhide Sumiyoshi ,  Shinji Tokuyama ,  Shimpei Takagi ,  Takatoshi Ikegami ,  Masaki Ueno ,  Koji Katayama

IPC分类号： H01L21/00

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01S5/0202 ,  H01S5/0207 ,  H01S5/2201 ,  H01S5/3202

摘要： A III-nitride semiconductor laser device is provided with a laser structure and an electrode. The laser structure includes a support base which includes a hexagonal III-nitride semiconductor and a semipolar primary surface, and a semiconductor region provided on the semipolar primary surface. The electrode is provided on the semiconductor region. The semiconductor region includes a first cladding layer of a first conductivity type GaN-based semiconductor, a second cladding layer of a second conductivity type GaN-based semiconductor, and an active layer provided between the first cladding layer and the second cladding layer.

摘要翻译： III族氮化物半导体激光器件具有激光结构和电极。 激光器结构包括支撑基底，其包括六边形III族氮化物半导体和半极性主表面，以及设置在半极性主表面上的半导体区域。 电极设置在半导体区域上。 半导体区域包括第一导电型GaN基半导体的第一包层，第二导电型GaN基半导体的第二包层和设置在第一包层和第二包层之间的有源层。

公开(公告)号：US06271474B1

公开(公告)日：2001-08-07

申请号：US09188242

申请日：1998-11-09

申请人： Jun Fujikami ,  Nobuhiro Saga ,  Shuji Hahakura ,  Kazuya Ohmatsu ,  Hideo Ishii ,  Shoichi Honjo ,  Yoshihiro Iwata

发明人： Jun Fujikami ,  Nobuhiro Saga ,  Shuji Hahakura ,  Kazuya Ohmatsu ,  Hideo Ishii ,  Shoichi Honjo ,  Yoshihiro Iwata

IPC分类号： H01B1208

CPC分类号： H01L39/248 ,  Y10S505/887

摘要： An oxide superconducting stranded wire having inter-strand insulation and high critical current is provided. A wire including an oxide superconducting material and a matrix covering the material and consisting essentially of silver or a silver alloy is coated with a paint containing, as a main component, an organometallic polymer such as a silicone polymer or aluminum primary phosphorus in a paint reservoir, and the paint is baked in a baking furnace via a drying furnace. A plurality of such wires with the baked paint are twined into a stranded wire, which is then heated up to a temperature necessary for sintering the oxide superconducting material. The stranded wire thus obtained through the step of sintering may have high critical current. A heat-resisting insulating coating layer may be formed by baking the paint.

摘要翻译： 提供具有线间绝缘和高临界电流的氧化物超导绞线。 包含氧化物超导材料的线材和覆盖材料并基本上由银或银合金组成的基体涂覆有在油漆储存器中包含作为主要成分的有机金属聚合物如有机硅聚合物或铝一次磷的涂料 ，并通过干燥炉在烤炉中烘烤。 将多个具有烘烤漆的这种线材缠绕成绞线，然后将其加热至烧结氧化物超导材料所需的温度。 由此获得的通过烧结步骤的绞合线可能具有高临界电流。 可以通过烘烤涂料来形成耐热绝缘涂层。

公开(公告)号：US20120258557A1

公开(公告)日：2012-10-11

申请号：US13443480

申请日：2012-04-10

申请人： Yusuke Yoshizumi ,  Yohei Enya ,  Takashi Kyono ,  Takamichi Sumitomo ,  Nobuhiro Saga ,  Masahiro Adachi ,  Kazuhide Sumiyoshi ,  Shinji Tokuyama ,  Shimpei Takagi ,  Takatoshi Ikegami ,  Masaki Ueno ,  Koji Katayama

发明人： Yusuke Yoshizumi ,  Yohei Enya ,  Takashi Kyono ,  Takamichi Sumitomo ,  Nobuhiro Saga ,  Masahiro Adachi ,  Kazuhide Sumiyoshi ,  Shinji Tokuyama ,  Shimpei Takagi ,  Takatoshi Ikegami ,  Masaki Ueno ,  Koji Katayama

IPC分类号： H01L33/62

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01S5/0202 ,  H01S5/0207 ,  H01S5/2201 ,  H01S5/3202

摘要： A III-nitride semiconductor laser device is provided with a laser structure and an electrode. The laser structure includes a support base which includes a hexagonal III-nitride semiconductor and a semipolar primary surface, and a semiconductor region provided on the semipolar primary surface. The electrode is provided on the semiconductor region. The semiconductor region includes a first cladding layer of a first conductivity type GaN-based semiconductor, a second cladding layer of a second conductivity type GaN-based semiconductor, and an active layer provided between the first cladding layer and the second cladding layer.

摘要翻译： III族氮化物半导体激光器件具有激光结构和电极。 激光器结构包括支撑基底，其包括六边形III族氮化物半导体和半极性主表面，以及设置在半极性主表面上的半导体区域。 电极设置在半导体区域上。 半导体区域包括第一导电型GaN基半导体的第一包层，第二导电型GaN基半导体的第二包层和设置在第一包层和第二包层之间的有源层。

公开(公告)号：US06305069B1

公开(公告)日：2001-10-23

申请号：US08627281

申请日：1996-04-04

申请人： Jun Fujikami ,  Nobuhiro Saga ,  Kazuya Ohmatsu ,  Kenichi Sato

发明人： Jun Fujikami ,  Nobuhiro Saga ,  Kazuya Ohmatsu ,  Kenichi Sato

IPC分类号： H01L3924

CPC分类号： H01F6/06 ,  C23C26/00 ,  C23C30/00 ,  H01L39/143 ,  H01L39/248 ,  Y10S505/701 ,  Y10S505/702 ,  Y10S505/703 ,  Y10S505/704 ,  Y10T29/49014

摘要： Provided are an oxide superconducting wire which maintains a high critical current density and has a small current drift with small ac loss when the same carries an alternating current and a method of preparing the same, and a cable conductor which is formed by assembling such oxide superconducting wires. The oxide superconducting wire is a flat-molded stranded wire which is formed by twisting a plurality of metal-coated strands consisting of an oxide superconductor, and is characterized in that the flat-molded stranded wire has a rectangular sectional shape, and a section of each strand forming the flat-molded stranded wire has an aspect ratio (W1/T1) of at least 2. The method of preparing this oxide superconducting wire comprises the steps of preparing a stranded wire by twisting a plurality of strands, each of which is formed by metal-coating an oxide superconductor or raw material powder therefor, flat-molding the prepared stranded wire, and repeating rolling and a heat treatment of at least 800° C. on the flat molded stranded wire a plurality of times.

摘要翻译： 提供一种氧化物超导线材，其保持高的临界电流密度，并且当相同的交流电流具有小的交流损耗时具有小的电流漂移及其制备方法，以及通过组装这种氧化物超导体形成的电缆导体 电线 氧化物超导线是通过扭转由氧化物超导体组成的多个金属涂敷线形成的扁平成形绞合线，其特征在于，所述扁平成形绞线具有矩形截面形状，并且部分 形成平线状绞合线的每条线的纵横比（W1 / T1）至少为2.制造该氧化物超导线的方法包括以下步骤：通过扭绞多条绞线来制备绞线， 通过金属涂覆氧化物超导体或其原料粉末形成，对制备的绞线进行平直成型，并且在扁平成型绞合线上多次重复进行至少800℃的滚压和热处理。

公开(公告)号：US5929000A

公开(公告)日：1999-07-27

申请号：US823907

申请日：1997-03-25

申请人： Shuji Hahakura ,  Nobuhiro Saga ,  Kazuya Ohmatsu ,  Kenichi Sato

发明人： Shuji Hahakura ,  Nobuhiro Saga ,  Kazuya Ohmatsu ,  Kenichi Sato

IPC分类号： C01G1/00 ,  C01G29/00 ,  H01B12/02 ,  H01B12/08 ,  H01B12/10 ,  H01B12/12 ,  H01B13/00 ,  H01L39/14 ,  H01L39/24 ,  H01B12/00

CPC分类号： H01L39/248 ,  H01B12/02 ,  H01B12/10 ,  H01L39/143 ,  Y02E40/641 ,  Y02E40/644 ,  Y10S505/704 ,  Y10T29/49014

摘要： An oxide superconducting wire having a circular or substantially circular sectional shape and exhibiting a high critical current density comparable to that of a tape-shaped wire is provided. The oxide superconducting wire consists of a plurality of filaments extending along the longitudinal direction of the wire in the form of ribbons, and a stabilizer matrix covering the filaments. The aspect ratio of the width to the thickness of each filament is 4 to 40, and the thickness of each filament is 5 to 50 .mu.m. A section of the wire is in a circular or substantially circular shape. The wire exhibits a critical current density of at least 2000 A/cm.sup.2 at a temperature of 77 K with no application of a magnetic field.

摘要翻译： 提供了一种具有圆形或基本上圆形截面形状并具有与带状线相当的临界电流密度的氧化物超导线。 氧化物超导线由沿着丝条的纵向方向延伸的多根细丝和带状的覆盖长丝的稳定剂基体组成。 每根灯丝的宽度与厚度的纵横比为4〜40，每根灯丝的厚度为5〜50μm。 线的一部分为圆形或大致圆形。 该线在77K的温度下表现出至少2000A / cm 2的临界电流密度，而不施加磁场。