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42 条记录 (耗时 0.022 秒)

    Electronic device and manufacturing method therefor
    1.
    发明授权
    Electronic device and manufacturing method therefor 失效
    电子设备及其制造方法

    公开(公告)号：US08018146B2

    公开(公告)日：2011-09-13

    申请号：US11768399

    申请日：2007-06-26

    申请人： Kiwako Ohmori ,  Nobuo Tanabe ,  Akinobu Ono

    发明人： Kiwako Ohmori ,  Nobuo Tanabe ,  Akinobu Ono

    IPC分类号： H01L51/00

    CPC分类号： H01L51/0015 ,  G03F7/039 ,  G03F7/093 ,  H01L51/5206

    摘要： A manufacturing method for an electronic device, the method including forming a transparent conductive film, including conductive polymers, on a base material, and irradiating ultraviolet light onto a part of the transparent conductive film such that first regions of the transparent conductive film are not irradiated and second regions, adjacent to the first regions, are irradiated, thus forming irradiated portions and non-irradiated portions. The irradiated portions having an electrical resistance value higher than that of the non-irradiated portions. The ultraviolet light includes a wavelength that exhibits an absorbance in an absorption spectrum of the conductive polymers, of the transparent conductive film, two or more times higher than that of a background.

    摘要翻译： 一种电子器件的制造方法，该方法包括在基材上形成包含导电聚合物的透明导电膜，并将紫外光照射到透明导电膜的一部分上，使得透明导电膜的第一区域不被照射 并且与第一区域相邻的第二区域被照射，从而形成照射部分和未照射部分。 所述照射部的电阻值高于未照射部的电阻值。 紫外线包括透明导电膜的导电性聚合物的吸收光谱中的吸光度的波长比背景的两倍以上。

    Method for making polycrystalline thin film and associated oxide superconductor and apparatus therefor
    7.
    发明授权
    Method for making polycrystalline thin film and associated oxide superconductor and apparatus therefor 有权
    制造多晶薄膜及其相关氧化物超导体的方法及其设备

    公开(公告)号：US06495008B2

    公开(公告)日：2002-12-17

    申请号：US09784209

    申请日：2001-02-16

    申请人： Yasuhiro Iijima ,  Mariko Hosaka ,  Nobuo Tanabe ,  Nobuyuki Sadakata ,  Takashi Saitoh

    发明人： Yasuhiro Iijima ,  Mariko Hosaka ,  Nobuo Tanabe ,  Nobuyuki Sadakata ,  Takashi Saitoh

    IPC分类号： C23C1434

    CPC分类号： H01L39/2461 ,  C23C14/083 ,  C23C14/087 ,  C23C14/22 ,  C23C14/46 ,  H01L39/2435 ,  Y02T50/67 ,  Y10S505/731

    摘要： A method is presented for making a polycrystalline thin film (B) by depositing particles emitted from a target (36) on a substrate base (A) to form the film (B) constituted by the target material while concurrently irradiating the depositing particles with an ion beam generated by an ion source (39) at an angle of incidence, in a range of 50 to 60 degrees to a normal (H) to a film surface, and maintaining a film temperature at less than 300 degrees Celsius. This method is effective in producing an excellent alignment of crystal axes of the grains in the film when the film thickness exceeds 200 nm. The target material includes yttrium-stabilized zirconia but other material can also be used. A layer (C) of a superconducting substance formed on top of the polycrystalline thin film (B) produces a superconducting film (22) exhibiting excellent superconducting properties.

    摘要翻译： 提出了一种通过将从靶材（36）发射的粒子沉积在基底（A）上以形成由靶材料构成的薄膜（B），同时用沉积颗粒同时照射沉积颗粒来制造多晶薄膜（B）的方法 由离子源（39）以入射角度产生的离子束在与膜表面的法线（H）成50至60度的范围内，并将膜温度保持在小于300摄氏度。 当膜厚超过200nm时，该方法在膜中的晶粒的晶轴的取向优异。 目标材料包括钇稳定的氧化锆，但也可以使用其它材料。 在多晶薄膜（B）的顶部形成的超导体的层（C）产生显示出优异的超导特性的超导膜（22）。

    PHOTOELECTRIC CONVERSION ELEMENT
    8.
    发明申请
    PHOTOELECTRIC CONVERSION ELEMENT 有权
    光电转换元件

    公开(公告)号：US20110073170A1

    公开(公告)日：2011-03-31

    申请号：US12960228

    申请日：2010-12-03

    申请人： Takeshi KIZAKI ,  Nobuo TANABE ,  Takayuki KITAMURA

    发明人： Takeshi KIZAKI ,  Nobuo TANABE ,  Takayuki KITAMURA

    IPC分类号： H01L31/02 ,  H01L51/44

    CPC分类号： H01G9/2027 ,  H01G9/2059 ,  H01G9/2068 ,  H01G9/2086 ,  Y02E10/542

    摘要： A photoelectric conversion element of the present invention includes: a first electrode being linear; a second electrode; and an electrolyte. The first electrode and the second electrode are disposed via the electrolyte. The first electrode includes a first linear material which includes a copper wire and a metal coating which coats the copper wire and a dye-carrying porous oxide semiconductor layer disposed on an outer circumference of the first linear material.

    摘要翻译： 本发明的光电转换元件包括：第一电极是线性的; 第二电极; 和电解质。 第一电极和第二电极经由电解质配置。 第一电极包括第一线性材料，其包括铜线和涂覆铜线的金属涂层和设置在第一线性材料的外圆周上的染料负载多孔氧化物半导体层。