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    Semiconductor device manufacturing method
    1.
    发明授权
    Semiconductor device manufacturing method 有权
    半导体器件制造方法

    公开(公告)号：US08575030B2

    公开(公告)日：2013-11-05

    申请号：US13196594

    申请日：2011-08-02

    申请人： Gaku Minamihaba ,  Yukiteru Matsui ,  Nobuyuki Kurashima ,  Hajime Eda

    发明人： Gaku Minamihaba ,  Yukiteru Matsui ,  Nobuyuki Kurashima ,  Hajime Eda

    IPC分类号： H01L21/302

    CPC分类号： B24B37/015 ,  B24B37/042 ,  B24B37/107 ,  B24B49/10 ,  B24B49/14 ,  H01L21/31053 ,  H01L21/3212 ,  H01L21/7684

    摘要： According to one embodiment, a semiconductor device manufacturing method is disclosed. The method can include polishing a film on a semiconductor substrate by pressing the film against a polishing pad. Polishing the film comprises performing first polishing in which an entrance temperature of the polishing pad is adjusted to 40° C. (inclusive) to 50° C. (inclusive), and an exit temperature of the polishing pad is adjusted to be higher by 5° C. or more than the entrance temperature. Polishing the film comprises performing second polishing in which the entrance temperature is adjusted to 30° C. or less, and the exit temperature is adjusted to be higher by 5° C. or more than the entrance temperature.

    摘要翻译： 根据一个实施例，公开了半导体器件制造方法。 该方法可以包括通过将膜压在抛光垫上来在半导体衬底上抛光膜。 抛光膜包括进行抛光垫的入口温度调节至40℃（含）至50℃（含）的第一次抛光，并将抛光垫的出口温度调节至5以上 °C或大于入口温度。 对该膜进行抛光包括进行入口温度为30℃以下的第二次研磨，将出口温度调整为5℃以上，进入温度以上。

    SEMICONDUCTOR DEVICE MANUFACTURING METHOD
    3.
    发明申请
    SEMICONDUCTOR DEVICE MANUFACTURING METHOD 有权
    半导体器件制造方法

    公开(公告)号：US20120034846A1

    公开(公告)日：2012-02-09

    申请号：US13196594

    申请日：2011-08-02

    申请人： Gaku MINAMIHABA ,  Yukiteru Matsui ,  Nobuyuki Kurashima ,  Hajime Eda

    发明人： Gaku MINAMIHABA ,  Yukiteru Matsui ,  Nobuyuki Kurashima ,  Hajime Eda

    IPC分类号： B24B51/00

    CPC分类号： B24B37/015 ,  B24B37/042 ,  B24B37/107 ,  B24B49/10 ,  B24B49/14 ,  H01L21/31053 ,  H01L21/3212 ,  H01L21/7684

    摘要： According to one embodiment, a semiconductor device manufacturing method is disclosed. The method can include polishing a film on a semiconductor substrate by pressing the film against a polishing pad. Polishing the film comprises performing first polishing in which an entrance temperature of the polishing pad is adjusted to 40° C. (inclusive) to 50° C. (inclusive), and an exit temperature of the polishing pad is adjusted to be higher by 5° C. or more than the entrance temperature. Polishing the film comprises performing second polishing in which the entrance temperature is adjusted to 30° C. or less, and the exit temperature is adjusted to be higher by 5° C. or more than the entrance temperature.

    摘要翻译： 根据一个实施例，公开了半导体器件制造方法。 该方法可以包括通过将膜压在抛光垫上来在半导体衬底上抛光膜。 抛光膜包括进行抛光垫的入口温度调节至40℃（含）至50℃（含）的第一次抛光，并将抛光垫的出口温度调节至5以上 °C或大于入口温度。 对该膜进行抛光包括进行入口温度为30℃以下的第二次研磨，将出口温度调整为5℃以上，进入温度以上。

    Method of manufacturing semiconductor device
    4.
    发明授权
    Method of manufacturing semiconductor device 失效
    制造半导体器件的方法

    公开(公告)号：US07825028B2

    公开(公告)日：2010-11-02

    申请号：US12289271

    申请日：2008-10-23

    申请人： Nobuyuki Kurashima ,  Gaku Minamihaba ,  Hiroyuki Yano

    发明人： Nobuyuki Kurashima ,  Gaku Minamihaba ,  Hiroyuki Yano

    IPC分类号： H01L21/302

    CPC分类号： H01L21/02074 ,  H01L21/76826 ,  H01L21/76835 ,  H01L21/7684

    摘要： Disclosed is a method for manufacturing a semiconductor device comprising forming a hydrophobic interlayer insulating film having a relative dielectric constant of 3.5 or less above a semiconductor substrate, forming a recess in the interlayer insulating film, depositing a conductive material above the interlayer insulating film having the recess to form a conductive layer, selectively removing the conductive material deposited above the interlayer insulating film by polishing to expose a surface of the interlayer insulating film while leaving the conductive material in the recess, and subjecting the surface of the interlayer insulating film having the recess filled with the conductive material to pressure washing using a resin member and an alkaline washing liquid containing an inorganic alkali and exhibiting a pH of more than 9.

    摘要翻译： 公开了一种半导体器件的制造方法，包括在半导体衬底上形成相对介电常数为3.5以下的疏水层间绝缘膜，在层间绝缘膜中形成凹部，在具有 凹陷以形成导电层，通过抛光选择性地去除沉积在层间绝缘膜上方的导电材料，以在层间绝缘膜的表面露出，同时将导电材料留在凹槽中，并对具有凹陷的层间绝缘膜的表面进行 填充导电材料以使用树脂构件和含有无机碱的碱性洗涤液进行压力洗涤并显示pH大于9。

    Method of manufacturing semiconductor device
    6.
    发明申请
    Method of manufacturing semiconductor device 审中-公开
    制造半导体器件的方法

    公开(公告)号：US20050218008A1

    公开(公告)日：2005-10-06

    申请号：US11051624

    申请日：2005-01-27

    申请人： Dai Fukushima ,  Gaku Minamihaba ,  Hiroyuki Yano ,  Nobuyuki Kurashima

    发明人： Dai Fukushima ,  Gaku Minamihaba ,  Hiroyuki Yano ,  Nobuyuki Kurashima

    IPC分类号： B24B37/00 ,  C25D7/12 ,  H01L21/00 ,  H01L21/02 ,  H01L21/304 ,  H01L21/3205 ,  H01L21/321 ,  H01L21/768

    CPC分类号： H01L21/6723 ,  H01L21/02074 ,  H01L21/3212 ,  H01L21/67219

    摘要： Disclosed is a method for manufacturing a semiconductor device, comprising depositing an electrically conductive film on an insulating film formed above a semiconductor substrate and having a recessed portion, polishing the surface of the electrically conductive film constituting a processing surface with an alkaline slurry on a polishing cloth to expose the surface of the insulating film to the outside while leaving the electrically conductive film selectively within the recessed portion of the insulating film, treating the processing surface, in which the surface of the insulating film is exposed to the outside by the polishing treatment with the alkaline slurry, with a deionized water and, then, with an acidic washing solution so as to render the processing surface acidic, and transferring the semiconductor substrate from the position on the polishing cloth into a washing unit while keeping the processing surface acidic.

    摘要翻译： 公开了一种制造半导体器件的方法，包括在形成于半导体衬底上的绝缘膜上沉积导电膜并具有凹陷部分，在抛光时用碱性浆料抛光构成处理表面的导电膜的表面 布将绝缘膜的表面露出到外部，同时将导电膜选择性地留在绝缘膜的凹陷部分内，通过抛光处理处理绝缘膜的表面暴露于外部的处理表面 用碱性浆料，用去离子水，然后用酸性洗涤溶液使处理表面呈酸性，并将半导体衬底从抛光布上的位置转移到洗涤单元中，同时保持处理表面为酸性。

    Manufacturing method of a semiconductor device
    8.
    发明授权
    Manufacturing method of a semiconductor device 有权
    半导体器件的制造方法

    公开(公告)号：US08174125B2

    公开(公告)日：2012-05-08

    申请号：US12412811

    申请日：2009-03-27

    申请人： Nobuyuki Kurashima ,  Gaku Minamihaba ,  Dai Fukushima ,  Yoshikuni Tateyama ,  Hiroyuki Yano

    发明人： Nobuyuki Kurashima ,  Gaku Minamihaba ,  Dai Fukushima ,  Yoshikuni Tateyama ,  Hiroyuki Yano

    IPC分类号： H01L23/48

    CPC分类号： H01L23/53295 ,  H01L21/76807 ,  H01L21/76832 ,  H01L21/7684 ,  H01L23/522 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A manufacturing method of a semiconductor device comprises: providing a first insulating film whose relative dielectric constant is at most a predetermined value above a substrate; providing a second insulating film whose relative dielectric constant is greater than the predetermined value on a surface of the first insulating film; forming a recess for a wire through the second insulating film and extending into the first insulating film, and also forming a recess for a dummy wire through the second insulating film and extending into the first insulating film spaced from a formed area of the recess for the wire; providing a conductive material inside the recess for the wire and the recess for the dummy wire; and providing a wire inside the recess for the wire and providing a dummy wire inside the recess for the dummy wire by polishing and removing the conductive material.

    摘要翻译： 半导体器件的制造方法包括：提供相对介电常数在基板上方至多预定值的第一绝缘膜; 提供在所述第一绝缘膜的表面上相对介电常数大于所述预定值的第二绝缘膜; 通过所述第二绝缘膜形成用于电线的凹槽并延伸到所述第一绝缘膜中，并且还通过所述第二绝缘膜形成用于虚拟线的凹槽并且延伸到与所述凹部的形成区域间隔开的所述第一绝缘膜中， 线; 在用于线的凹槽内部和用于虚拟线的凹槽内提供导电材料; 并且在所述凹槽内提供用于所述导线的线，并且通过抛光和去除所述导电材料在所述虚拟线的所述凹部内部提供虚拟线。

    POST-CMP TREATING LIQUID AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE USING THE SAME
    9.
    发明申请
    POST-CMP TREATING LIQUID AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE USING THE SAME 审中-公开
    使用其的半导体器件的后CMP处理液体和制造方法

    公开(公告)号：US20110195888A1

    公开(公告)日：2011-08-11

    申请号：US13091732

    申请日：2011-04-21

    申请人： Nobuyuki KURASHIMA ,  Gaku Minamihaba ,  Yoshikuni Tateyama ,  Hiroyuki Yano

    发明人： Nobuyuki KURASHIMA ,  Gaku Minamihaba ,  Yoshikuni Tateyama ,  Hiroyuki Yano

    IPC分类号： C11D3/60

    CPC分类号： H01L21/02074

    摘要： Post-CMP treating liquids are provided, one of which includes water, an amphoteric surfactant, an anionic surfactant, a complexing agent, resin particles having carboxylic group and sulfonyl group on their surfaces, a primary particle diameter thereof ranging from 10 to 60 nm, and tetramethyl ammonium hydroxide. Another includes water, polyphenol, an anionic surfactant, ethylene diamine tetraacetic acid, resin particles having carboxylic group and sulfonyl group on their surfaces, a primary particle diameter thereof ranging from 10 to 60 nm, and tetramethyl ammonium hydroxide. Both of the treating liquids have a pH ranging from 4 to 9, and exhibit a polishing rate both of an insulating film and a conductive film at a rate of 10 nm/min or less.

    摘要翻译： 提供后CMP处理液，其中之一包括水，两性表面活性剂，阴离子表面活性剂，络合剂，其表面具有羧基和磺酰基的树脂颗粒，其一次粒径为10至60nm， 和四甲基氢氧化铵。 另外还包括水，多酚，阴离子表面活性剂，乙二胺四乙酸，其表面具有羧基和磺酰基的树脂颗粒，其一次粒径为10至60nm，四甲基氢氧化铵。 两种处理液的pH范围为4至9，并且以10nm / min或更低的速率显示绝缘膜和导电膜的抛光速率。