公开(公告)号：US20120228261A1

公开(公告)日：2012-09-13

申请号：US13510296

申请日：2010-11-16

申请人： Seiichi Watanabe ,  Yutaka Kozuma ,  Tooru Aramaki ,  Naoki Yasui ,  Norihiko Ikeda ,  Hiroaki Takikawa

发明人： Seiichi Watanabe ,  Yutaka Kozuma ,  Tooru Aramaki ,  Naoki Yasui ,  Norihiko Ikeda ,  Hiroaki Takikawa

IPC分类号： C23F1/08 ,  C23F1/00

CPC分类号： H01L21/32139 ,  G03F7/40 ,  H01J37/32357 ,  H01J37/32807 ,  H01J37/32816 ,  H01J37/32871 ,  H01L21/0273 ,  H01L21/28035

摘要： There is provided a VUV light processing apparatus that can apply vacuum ultraviolet light to the entire surface of a wafer in excellent reproducibility and can process the wafer with VUV (vacuum ultraviolet) light in excellent reproducibility. A VUV light processing apparatus includes: a chamber connected with a gas supply apparatus and an evacuation apparatus, the chamber being capable of reducing the pressure inside the chamber; a plasma light source that generates VUV light including a wavelength of 200 nm or less, the plasma light source including a plasma generating unit that generates plasma in the chamber; and a VUV transmission filter provided between a stage on which a sample to be processed is placed and the sample in the chamber, the VUV transmission filter transmitting the VUV light including a wavelength of 200 nm or less and not transmitting electrons, ions, and radicals in plasma, the VUV transmission filter having the outer diameter size larger than that of the sample.

摘要翻译： 提供了一种能够以优异的再现性将真空紫外光施加到晶片的整个表面的VUV光处理装置，并且可以以优异的再现性以VUV（真空紫外线）光处理晶片。 VUV光处理装置包括：与气体供给装置和排气装置连接的室，所述室能够减小所述室内的压力; 等离子体光源，其产生包括200nm以下的波长的VUV光，所述等离子体光源包括在所述室中产生等离子体的等离子体发生单元; VUV透射滤光器，其设置在放置有待处理样品的台和样品之间，VUV透射滤光器透射包含200nm以下的波长的VUV光，不透射电子，离子和基团 在等离子体中，VUV透射滤光器的外径尺寸大于样品的外径尺寸。

公开(公告)号：US20050164510A1

公开(公告)日：2005-07-28

申请号：US11038190

申请日：2005-01-21

申请人： Norihiko Ikeda ,  Kazuo Nishimoto ,  Masayuki Hattori ,  Nobuo Kawahashi

发明人： Norihiko Ikeda ,  Kazuo Nishimoto ,  Masayuki Hattori ,  Nobuo Kawahashi

IPC分类号： C09G1/02 ,  C09K3/14 ,  H01L21/304 ,  H01L21/306 ,  H01L21/3105 ,  H01L21/302 ,  H01L21/461

CPC分类号： C09G1/02 ,  C09K3/1463 ,  H01L21/31053

摘要： A chemical mechanical polishing aqueous dispersion comprises abrasives (A) containing ceria, an anionic water-soluble polymer (B) and a cationic surfactant (C), wherein the amount of the anionic water-soluble polymer (B) is in the range of 60 to 600 parts by mass based on 100 parts by mass of the abrasives (A) containing ceria, and the amount of the cationic surfactant (C) is in the range of 0.1 to 100 ppm based on the whole amount of the chemical mechanical polishing aqueous dispersion.

摘要翻译： 化学机械抛光水分散体包含含有二氧化铈的研磨剂（A），阴离子水溶性聚合物（B）和阳离子表面活性剂（C），其中阴离子水溶性聚合物（B）的量在60 相对于100质量份含有二氧化铈的研磨剂（A）为600质量份，阳离子性表面活性剂（C）的含量相对于化学机械研磨用水的总量为0.1〜100ppm 分散。

公开(公告)号：US20060010781A1

公开(公告)日：2006-01-19

申请号：US11180619

申请日：2005-07-14

申请人： Norihiko Ikeda ,  Kazuo Nishimoto ,  Masayuki Hattori ,  Nobuo Kawahashi

发明人： Norihiko Ikeda ,  Kazuo Nishimoto ,  Masayuki Hattori ,  Nobuo Kawahashi

IPC分类号： B24D11/00 ,  B24D3/02

CPC分类号： H01L21/31053 ,  C09G1/02

摘要： A chemical mechanical polishing aqueous dispersion comprises abrasives in a concentration of not more than 1.5% by mass, wherein the abrasives comprise ceria and have an average dispersed particle diameter of not less than 1.0 μm. A chemical mechanical polishing method comprises polishing an insulating film by the use of the chemical mechanical polishing aqueous dispersion. By the use of the chemical mechanical polishing aqueous dispersion, occurrence of polishing scratches can be suppressed without lowering a removal rate.

公开(公告)号：US09390941B2

公开(公告)日：2016-07-12

申请号：US13510296

申请日：2010-11-16

申请人： Seiichi Watanabe ,  Yutaka Kozuma ,  Tooru Aramaki ,  Naoki Yasui ,  Norihiko Ikeda ,  Hiroaki Takikawa

发明人： Seiichi Watanabe ,  Yutaka Kozuma ,  Tooru Aramaki ,  Naoki Yasui ,  Norihiko Ikeda ,  Hiroaki Takikawa

IPC分类号： H01L21/306 ,  C23F1/00 ,  H01L21/3213 ,  G03F7/40 ,  H01J37/32 ,  H01L21/027 ,  H01L21/28

CPC分类号： H01L21/32139 ,  G03F7/40 ,  H01J37/32357 ,  H01J37/32807 ,  H01J37/32816 ,  H01J37/32871 ,  H01L21/0273 ,  H01L21/28035

摘要： There is provided a VUV light processing apparatus that can apply vacuum ultraviolet light to the entire surface of a wafer in excellent reproducibility and can process the wafer with VUV (vacuum ultraviolet) light in excellent reproducibility. A VUV light processing apparatus includes: a chamber connected with a gas supply apparatus and an evacuation apparatus, the chamber being capable of reducing the pressure inside the chamber; a plasma light source that generates VUV light including a wavelength of 200 nm or less, the plasma light source including a plasma generating unit that generates plasma in the chamber; and a VUV transmission filter provided between a stage on which a sample to be processed is placed and the sample in the chamber, the VUV transmission filter transmitting the VUV light including a wavelength of 200 nm or less and not transmitting electrons, ions, and radicals in plasma, the VUV transmission filter having the outer diameter size larger than that of the sample.

摘要翻译： 提供了一种能够以优异的再现性将真空紫外光施加到晶片的整个表面的VUV光处理装置，并且可以以优异的再现性以VUV（真空紫外线）光处理晶片。 VUV光处理装置包括：与气体供给装置和排气装置连接的室，所述室能够减小所述室内的压力; 等离子体光源，其产生包括200nm以下的波长的VUV光，所述等离子体光源包括在所述室中产生等离子体的等离子体发生单元; VUV透射滤光器，其设置在放置有待处理样品的台和样品之间，VUV透射滤光器透射包含200nm以下的波长的VUV光，不透射电子，离子和基团 在等离子体中，VUV透射滤光器的外径尺寸大于样品的尺寸。

公开(公告)号：US08157877B2

公开(公告)日：2012-04-17

申请号：US12097361

申请日：2006-12-04

申请人： Norihiko Ikeda ,  Tomikazu Ueno

发明人： Norihiko Ikeda ,  Tomikazu Ueno

IPC分类号： B24D3/02 ,  C09C1/68 ,  C09K3/14 ,  C09K13/00 ,  H01L21/302 ,  H01L21/461

CPC分类号： C09G1/02 ,  C09K3/1463 ,  H01L21/31053

摘要： A chemical mechanical polishing aqueous dispersion includes (A) abrasive grains having a pore volume of 0.14 ml/g or more, and (B) a dispersion medium.

摘要翻译： 化学机械研磨用水分散体包含（A）孔体积为0.14ml / g以上的磨粒，（B）分散介质。

公开(公告)号：US20090325323A1

公开(公告)日：2009-12-31

申请号：US12373897

申请日：2007-07-11

申请人： Tomikazu Ueno ,  Norihiko Ikeda ,  Mitsuru Meno

发明人： Tomikazu Ueno ,  Norihiko Ikeda ,  Mitsuru Meno

IPC分类号： C09G1/02 ,  H01L21/304 ,  C09K13/00

CPC分类号： C09G1/02 ,  B24B37/044 ,  C09K3/1463 ,  H01L21/31053

摘要： There is provided an aqueous dispersion for chemical mechanical polishing that comprises abrasives comprising: (A) 100 parts by weight of inorganic particles comprising ceria, (B) 5 to 100 parts by weight of cationic organic polymer particles, and (C) 5 to 120 parts by weight of anionic water-soluble compound. The aqueous dispersion for chemical mechanical polishing is preferably produced by a method comprising a step of adding a second liquid comprising (C) 5 to 30 wt % of anionic water-soluble compound to a first liquid comprising (A) 0.1 to 10 wt % of inorganic particles comprising ceria and (B) 5 to 100 parts by weight of cationic organic polymer particles based on 100 parts by weight of the inorganic particles (A).

摘要翻译： 提供了一种用于化学机械抛光的水性分散体，其包括研磨剂，其包含：（A）100重量份的包含二氧化铈的无机颗粒，（B）5至100重量份的阳离子有机聚合物颗粒，和（C）5至120 重量份的阴离子水溶性化合物。 用于化学机械抛光的水性分散体优选通过包括以下步骤的方法来制备：将包含（C）5至30重量％的阴离子水溶性化合物的第二液体添加到第一液体中的步骤，所述第一液体包含（A）0.1至10重量％ 包含二氧化铈的无机颗粒和（B）基于100重量份的无机颗粒（A）的5至100重量份的阳离子有机聚合物颗粒。

公开(公告)号：US07550020B2

公开(公告)日：2009-06-23

申请号：US11180619

申请日：2005-07-14

申请人： Norihiko Ikeda ,  Kazuo Nishimoto ,  Masayuki Hattori ,  Nobuo Kawahashi

发明人： Norihiko Ikeda ,  Kazuo Nishimoto ,  Masayuki Hattori ,  Nobuo Kawahashi

IPC分类号： C09G1/02 ,  C09G1/04

CPC分类号： H01L21/31053 ,  C09G1/02

摘要： A chemical mechanical polishing aqueous dispersion comprises abrasives in a concentration of not more than 1.5% by mass, wherein the abrasives comprise ceria and have an average dispersed particle diameter of not less than 1.0 μm. A chemical mechanical polishing method comprises polishing an insulating film by the use of the chemical mechanical polishing aqueous dispersion. By the use of the chemical mechanical polishing aqueous dispersion, occurrence of polishing scratches can be suppressed without lowering a removal rate.

摘要翻译： 化学机械研磨用水分散体包含浓度为1.5质量％以下的研磨剂，其中研磨剂包含二氧化铈，平均分散粒径不小于1.0μm。 化学机械抛光方法包括通过使用化学机械抛光水分散体抛光绝缘膜。 通过使用化学机械研磨水分散体，可以抑制抛光划痕的发生，而不降低去除率。

公开(公告)号：US07252782B2

公开(公告)日：2007-08-07

申请号：US11038190

申请日：2005-01-21

申请人： Norihiko Ikeda ,  Kazuo Nishimoto ,  Masayuki Hattori ,  Nobuo Kawahashi

发明人： Norihiko Ikeda ,  Kazuo Nishimoto ,  Masayuki Hattori ,  Nobuo Kawahashi

IPC分类号： C09K13/06

CPC分类号： C09G1/02 ,  C09K3/1463 ,  H01L21/31053

摘要： A chemical mechanical polishing aqueous dispersion comprises abrasives (A) containing ceria, an anionic water-soluble polymer (B) and a cationic surfactant (C), wherein the amount of the anionic water-soluble polymer (B) is in the range of 60 to 600 parts by mass based on 100 parts by mass of the abrasives (A) containing ceria, and the amount of the cationic surfactant (C) is in the range of 0.1 to 100 ppm based on the whole amount of the chemical mechanical polishing aqueous dispersion.

摘要翻译： 化学机械抛光水分散体包含含有二氧化铈的研磨剂（A），阴离子水溶性聚合物（B）和阳离子表面活性剂（C），其中阴离子水溶性聚合物（B）的量在60 相对于100质量份含有二氧化铈的研磨剂（A）为600质量份，阳离子性表面活性剂（C）的含量相对于化学机械研磨用水的总量为0.1〜100ppm 分散。

公开(公告)号：US20070151951A1

公开(公告)日：2007-07-05

申请号：US11680332

申请日：2007-02-28

申请人： Mutsuhiko Yoshioka ,  Eiji Hayashi ,  Norihiko Ikeda

发明人： Mutsuhiko Yoshioka ,  Eiji Hayashi ,  Norihiko Ikeda

IPC分类号： C03C15/00 ,  H01L21/461 ,  C08J7/04 ,  B44C1/22

CPC分类号： H01L21/02126 ,  B24B37/042 ,  C09D183/16 ,  H01L21/02282 ,  H01L21/3121 ,  H01L21/3212 ,  H01L21/76829 ,  H01L21/7684

摘要： A stopper for chemical mechanical planarization comprising an organosilicon polymer, in particular a polycarbosilane, is provided. The stopper used for polishing wafers with a wiring pattern in the manufacture of semiconductor devices to protect interlayer dielectric films made of a material such as SiO2, fluorine dope SiO2, or organic or inorganic SOG (Spin-on glass) from damages during the chemical mechanical planarization process.

摘要翻译： 提供了一种用于化学机械平面化的塞子，其包含有机硅聚合物，特别是聚碳硅烷。 用于在半导体器件的制造中用于抛光具有布线图案的晶片的止动器，以保护由诸如SiO 2，氟掺杂SiO 2 2的材料制成的层间绝缘膜，或者 有机或无机SOG（旋转玻璃）在化学机械平面化过程中受损。

公开(公告)号：US07189651B2

公开(公告)日：2007-03-13

申请号：US10726592

申请日：2003-12-04

申请人： Mutsuhiko Yoshioka ,  Eiji Hayashi ,  Norihiko Ikeda

发明人： Mutsuhiko Yoshioka ,  Eiji Hayashi ,  Norihiko Ikeda

IPC分类号： H01L21/302

CPC分类号： H01L21/02126 ,  B24B37/042 ,  C09D183/16 ,  H01L21/02282 ,  H01L21/3121 ,  H01L21/3212 ,  H01L21/76829 ,  H01L21/7684

摘要： A stopper for chemical mechanical planarization comprising an organosilicon polymer, in particular a polycarbosilane, is provided. The stopper used for polishing wafers with a wiring pattern in the manufacture of semiconductor devices to protect interlayer dielectric films made of a material such as SiO2, fluorine dope SiO2, or organic or inorganic SOG (Spin-on glass) from damages during the chemical mechanical planarization process.

摘要翻译： 提供了一种用于化学机械平面化的塞子，其包含有机硅聚合物，特别是聚碳硅烷。 用于在半导体器件的制造中用于抛光具有布线图案的晶片的止动器，以保护由诸如SiO 2，氟掺杂SiO 2 2的材料制成的层间绝缘膜，或者 有机或无机SOG（旋转玻璃）在化学机械平面化过程中受损。