公开(公告)号：US07675715B2

公开(公告)日：2010-03-09

申请号：US11227906

申请日：2005-09-14

申请人： Masatoshi Arasawa ,  Izuru Ishii ,  Shuichi Kojima ,  Naoki Koyama ,  Norihiro Ookawa

发明人： Masatoshi Arasawa ,  Izuru Ishii ,  Shuichi Kojima ,  Naoki Koyama ,  Norihiro Ookawa

IPC分类号： G11B5/33 ,  G11B5/127

CPC分类号： G11B5/3163 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3912

摘要： In one embodiment, a seed layer, an underlayer, and a magnetic domain control layer are laminated on both sides of a magnetoresistive sheet unit. A lower electrode film is thinly formed on an upper portion of the magnetic domain control film. A portion of the lower electrode film near the magnetoresistive sheet unit does not protrude substantially from an upper surface of the magnetoresistive sheet unit. Should the portion protrude, a step from the upper surface of the magnetoresistive sheet unit is about 14 nm or less. This portion and the upper surface of the magnetoresistive sheet unit are formed into a flat surface. An upper electrode film is formed thickly on an upper portion of the lower electrode film on an outside thereof so as to circumvent the flat surface. A protective layer, an upper gap film, and an upper magnetic shield film are also formed.

摘要翻译： 在一个实施例中，种子层，底层和磁畴控制层层叠在磁阻片单元的两侧。 在磁畴控制膜的上部薄薄地形成下电极膜。 磁阻片单元附近的下电极膜的一部分基本上不从磁阻片单元的上表面凸出。 如果该部分突出，则从磁阻片单元的上表面开始的步长约为14nm或更小。 磁阻片单元的该部分和上表面形成为平坦表面。 在下部电极膜的上部的外侧厚度形成上部电极膜，以便绕着平坦表面。 还形成保护层，上间隙膜和上磁屏蔽膜。

公开(公告)号：US20070195454A1

公开(公告)日：2007-08-23

申请号：US11650336

申请日：2007-01-05

申请人： Hisashi Kimura ,  Atsushi Kato ,  Norihiro Ookawa ,  Kikuo Kusukawa

发明人： Hisashi Kimura ,  Atsushi Kato ,  Norihiro Ookawa ,  Kikuo Kusukawa

IPC分类号： G11B5/147

CPC分类号： G11B5/1278 ,  G11B5/3163

摘要： If the length of a track-defining section from an air bearing surface varies due to tolerance during a head manufacturing process, the recording magnetic field changes, which involves the variation of the track width to be recorded on the medium. In accordance with an embodiment of the present invention, the main magnetic pole of a magnetic head includes a track-defining section shaped in trapezoid and a magnetic flux guiding section formed in trapezoid, as viewed from above. The track-defining section is formed such that its width parallel to the air bearing surface (ABS) increases at the rate of 10 to 20% with respect to its height-direction length. The rate of 10 to 20% is a range in which the shape is properly controllable taking into account the variations resulting from the tolerance of the head manufacturing process.

摘要翻译： 如果来自空气轴承表面的轨道限定部分的长度由于头部制造过程中的公差而变化，则记录磁场改变，其涉及要记录在介质上的轨道宽度的变化。 根据本发明的实施例，磁头的主磁极包括梯形形状的轨道限定部分和从上方观察形成为梯形的磁通引导部分。 轨道限定部分形成为使得其平行于空气轴承表面（ABS）的宽度相对于其高度方向长度以10％至20％的速率增加。 考虑到由头制造过程的公差引起的变化，10〜20％的比率是形状适当可控的范围。

公开(公告)号：US08568602B2

公开(公告)日：2013-10-29

申请号：US13009738

申请日：2011-01-19

申请人： Koji Sakamoto ,  Atsushi Katou ,  Takao Yonekawa ,  Norihiro Ookawa ,  Kouichi Nishioka ,  Kouji Okazaki

发明人： Koji Sakamoto ,  Atsushi Katou ,  Takao Yonekawa ,  Norihiro Ookawa ,  Kouichi Nishioka ,  Kouji Okazaki

IPC分类号： C23F1/00 ,  B44C1/22

CPC分类号： G11B5/3163 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3929 ,  H01L43/08

摘要： A method for manufacturing a magnetic sensor that decreases area resistance and decreases MR ratio of the sensor by eliminating any oxide formation in the capping layer of the sensor. The method includes forming a sensor stack having a multi-layer capping structure formed there-over. The multi-layer capping structure can include first, second, third and fourth layers. The second layer is constructed of a material that is not easily oxidized and which is different from the first layer. The sensor can be formed using a mask that includes a carbon hard mask. After the sensor stack has been formed by ion milling, the hard mask can be removed by reactive ion etching. Then, a cleaning process is performed to remove the second, third and fourth layers of the capping layer structure using an end point detection method such as secondary ion mass spectrometry to detect the presence of the second layer.

摘要翻译： 一种制造磁传感器的方法，其通过消除传感器的覆盖层中的任何氧化物形成来降低传感器的面积电阻并降低MR比。 该方法包括形成其上形成有多层封盖结构的传感器堆叠。 多层封盖结构可以包括第一层，第二层，第三层和第四层。 第二层由不容易氧化并且不同于第一层的材料构成。 传感器可以使用包括碳硬掩模的掩模形成。 在通过离子铣削形成传感器堆叠之后，可以通过反应离子蚀刻去除硬掩模。 然后，使用诸如二次离子质谱法的终点检测方法来进行清洁处理以去除覆盖层结构的第二层，第三层和第四层，以检测第二层的存在。

公开(公告)号：US08537503B2

公开(公告)日：2013-09-17

申请号：US12547394

申请日：2009-08-25

申请人： Katsuro Watanabe ,  Shigeo Fujita ,  Norihiro Ookawa ,  Kenichi Meguro

发明人： Katsuro Watanabe ,  Shigeo Fujita ,  Norihiro Ookawa ,  Kenichi Meguro

IPC分类号： G11B5/33

CPC分类号： G01R33/093 ,  B82Y25/00 ,  G11B5/398 ,  G11B5/40

摘要： According to one embodiment, a magnetoresistive head has a magnetoresistive sensor film between a lower shield layer and an upper shield layer. The magnetoresistive sensor film is formed by stacking at least a pinning layer, a first ferromagnetic layer, an intermediate layer, and a second ferromagnetic layer, in which a sense current flows so as to pass through an interface between the intermediate layer and the second ferromagnetic layer, and a resistance change of the magnetoresistive sensor film in accordance with the change of an external magnetic field is detected. Also, a lateral side metal layer having an electric resistivity lower than the electric resistivity of the pinning layer is disposed at least on a side wall of the pinning layer among side walls of layers constituting the magnetoresistive sensor film, the lateral side metal layer being in contact with the lower shield layer. Other embodiments are described as well.

摘要翻译： 根据一个实施例，磁阻头在下屏蔽层和上屏蔽层之间具有磁阻传感器膜。 磁阻传感器膜通过堆叠至少一个感测电流流过的钉扎层，第一铁磁层，中间层和第二铁磁层形成，以便穿过中间层和第二铁磁体之间的界面 层，并且检测到根据外部磁场的变化的磁阻传感器膜的电阻变化。 此外，具有低于钉扎层的电阻率的电阻率的侧面金属层至少设置在构成磁阻传感器膜的层的侧壁中的钉扎层的侧壁上，侧面金属层位于 与下屏蔽层接触。 还描述了其它实施例。

公开(公告)号：US20120184053A1

公开(公告)日：2012-07-19

申请号：US13009738

申请日：2011-01-19

申请人： Koji Sakamoto ,  Atsushi Katou ,  Takao Yonekawa ,  Norihiro Ookawa ,  Kouichi Nishioka ,  Kouji Okazaki

发明人： Koji Sakamoto ,  Atsushi Katou ,  Takao Yonekawa ,  Norihiro Ookawa ,  Kouichi Nishioka ,  Kouji Okazaki

IPC分类号： H01L21/02

CPC分类号： G11B5/3163 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3929 ,  H01L43/08

摘要： A method for manufacturing a magnetic sensor that decreases area resistance and decreases MR ratio of the sensor by eliminating any oxide formation in the capping layer of the sensor. The method includes forming a sensor stack having a multi-layer capping structure formed there-over. The multi-layer capping structure can include first, second, third and fourth layers. The second layer is constructed of a material that is not easily oxidized and which is different from the first layer. The sensor can be formed using a mask that includes a carbon hard mask. After the sensor stack has been formed by ion milling, the hard mask can be removed by reactive ion etching. Then, a cleaning process is performed to remove the second, third and fourth layers of the capping layer structure using an end point detection method such as secondary ion mass spectrometry to detect the presence of the second layer.

摘要翻译： 一种制造磁传感器的方法，其通过消除传感器的覆盖层中的任何氧化物形成来降低传感器的面积电阻并降低MR比。 该方法包括形成其上形成有多层封盖结构的传感器堆叠。 多层封盖结构可以包括第一层，第二层，第三层和第四层。 第二层由不容易氧化并且不同于第一层的材料构成。 传感器可以使用包括碳硬掩模的掩模形成。 在通过离子铣削形成传感器堆叠之后，可以通过反应离子蚀刻去除硬掩模。 然后，使用诸如二次离子质谱法的终点检测方法来进行清洁处理以去除覆盖层结构的第二层，第三层和第四层，以检测第二层的存在。

公开(公告)号：US07710685B2

公开(公告)日：2010-05-04

申请号：US11650336

申请日：2007-01-05

申请人： Hisashi Kimura ,  Atsushi Kato ,  Norihiro Ookawa ,  Kikuo Kusukawa

发明人： Hisashi Kimura ,  Atsushi Kato ,  Norihiro Ookawa ,  Kikuo Kusukawa

IPC分类号： G11B5/127

CPC分类号： G11B5/1278 ,  G11B5/3163

摘要： If the length of a track-defining section from an air bearing surface varies due to tolerance during a head manufacturing process, the recording magnetic field changes, which involves the variation of the track width to be recorded on the medium. In accordance with an embodiment of the present invention, the main magnetic pole of a magnetic head includes a track-defining section shaped in trapezoid and a magnetic flux guiding section formed in trapezoid, as viewed from above. The track-defining section is formed such that its width parallel to the air bearing surface (ABS) increases at the rate of 10 to 20% with respect to its height-direction length. The rate of 10 to 20% is a range in which the shape is properly controllable taking into account the variations resulting from the tolerance of the head manufacturing process.

摘要翻译： 如果来自空气轴承表面的轨道限定部分的长度由于头部制造过程中的公差而变化，则记录磁场改变，其涉及要记录在介质上的轨道宽度的变化。 根据本发明的实施例，磁头的主磁极包括梯形形状的轨道限定部分和从上方观察形成为梯形的磁通引导部分。 轨道限定部分形成为使得其平行于空气轴承表面（ABS）的宽度相对于其高度方向长度以10％至20％的速率增加。 考虑到由头制造过程的公差引起的变化，10〜20％的比率是形状适当可控的范围。

公开(公告)号：US20060238918A1

公开(公告)日：2006-10-26

申请号：US11408429

申请日：2006-04-20

申请人： Atsushi Kato ,  Norihiro Ookawa ,  Hisashi Kimura

发明人： Atsushi Kato ,  Norihiro Ookawa ,  Hisashi Kimura

IPC分类号： G11B5/147

CPC分类号： G11B5/3163 ,  G11B5/1278 ,  G11B5/3116 ,  Y10T29/49041 ,  Y10T29/49043 ,  Y10T29/49046 ,  Y10T29/4906

摘要： A main magnetic pole of a recording head is formed in an inverted trapezoidal shape by ion milling but, the long milling time poses a problem of variations in the inverted trapezoidal shape and the dimensional variations in track width. In one embodiment of the invention, a recording head is formed by first forming a lower magnetic pole, a gap layer, and conductor coils, forming an upper magnetic yoke over the gap layer at a position recessed from the air bearing surface, and forming an inorganic insulative layer in the recessed portion. A back magnetic pole connected with the upper magnetic yoke is formed on the back of the lower electrode. Successively, the upper surfaces of the inorganic insulative layer and the upper magnetic yoke are planarized, on which an underlayer film such as of Rh is formed. A magnetic layer is formed by stacking a plurality of thin magnetic films by sputtering over the underlayer film from the air bearing surface as far as the position overlapping the upper magnetic yoke. Successively, ion milling is applied to form a main magnetic pole of an inverted trapezoidal shape having a taper on the lateral surface as viewed from the air bearing surface.

摘要翻译： 记录头的主磁极通过离子铣削形成倒梯形形状，但是长铣削时间带来了倒梯形形状的变化和轨道宽度的尺寸变化的问题。 在本发明的一个实施例中，通过首先形成下磁极，间隙层和导体线圈来形成记录头，在距空气轴承表面凹陷的位置上在间隙层上形成上磁轭，并形成 无机绝缘层。 与上磁轭连接的后磁极形成在下电极的背面。 接着，无机绝缘层和上磁轭的上表面被平坦化，在其上形成诸如Rh的下层膜。 通过从空气轴承表面溅射下层膜而形成多个薄磁性膜，只要与上磁轭重叠的位置即可形成磁性层。 接着，从空气轴承表面观察，施加离子铣削以形成具有在侧面上的锥形的倒梯形形状的主磁极。

公开(公告)号：US07468870B2

公开(公告)日：2008-12-23

申请号：US11317881

申请日：2005-12-22

申请人： Masatoshi Arasawa ,  Wataru Kimura ,  Shuichi Kojima ,  Koji Okazaki ,  Norihiro Ookawa

发明人： Masatoshi Arasawa ,  Wataru Kimura ,  Shuichi Kojima ,  Koji Okazaki ,  Norihiro Ookawa

IPC分类号： G11B5/39

CPC分类号： G11B5/3912 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3932

摘要： Making thinner the magnetic domain control layer deteriorates the magnetic properties. Also, disturbances tend to increase the magnetization dispersion of the magnetic domain control layer, thereby lowering the magnetic domain control bias magnetic field. In one embodiment of the invention, a first magnetic domain control layer is provided in the proximity of the free layer of the GMR sensor in such a way that the track width is Twr1. Outside the first magnetic domain control layer is provided a second magnetic domain control layer. The second magnetic domain control layer placed outside the first magnetic domain control layer gives the first magnetic domain control layer an external bias field. The amount of magnetization of the tip of the first magnetic domain control layer is polarized and increased by the bias magnetic field from the second magnetic domain control layer. This causes the first magnetic domain control layer to apply a strong bias magnetic field having a lower dispersion to the free layer of the GMR sensor.

摘要翻译： 使磁畴控制层变薄使磁特性恶化。 此外，扰动倾向于增加磁畴控制层的磁化散度，从而降低磁畴控制偏置磁场。 在本发明的一个实施例中，第一磁畴控制层设置在GMR传感器的自由层附近，使得轨道宽度为Twr1。 在第一磁畴控制层之外设置有第二磁畴控制层。 放置在第一磁畴控制层之外的第二磁畴控制层给予第一磁畴控制层外部偏置场。 第一磁畴控制层的尖端的磁化量被来自第二磁畴控制层的偏置磁场极化并增加。 这使得第一磁畴控制层向GMR传感器的自由层施加具有较低色散的强偏磁场。

公开(公告)号：US07177121B2

公开(公告)日：2007-02-13

申请号：US10665091

申请日：2003-09-16

申请人： Shuichi Kojima ,  Norihiro Ookawa ,  Koji Okazaki ,  Yasunobu Yanagisawa ,  Akira Morinaga

发明人： Shuichi Kojima ,  Norihiro Ookawa ,  Koji Okazaki ,  Yasunobu Yanagisawa ,  Akira Morinaga

IPC分类号： G11B5/39

CPC分类号： B82Y25/00 ,  G01R33/093 ,  G11B5/313 ,  G11B5/3163 ,  G11B5/3903 ,  G11B5/3932 ,  G11B5/3958 ,  Y10T29/49052

摘要： In a magnetoresistive head according to the present invention, a magnetic domain control film formed at the end of a free layer of a stack of magnetoresistive layers is formed of a Co alloy film, and an underlayer controlling the crystallization state of the Co alloy film and an amorphous metal film layer for controlling the crystallization state of the underlayer are disposed below the magnetic domain control film.

摘要翻译： 在根据本发明的磁阻磁头中，形成在磁阻层堆叠自由层末端的磁畴控制膜由Co合金膜和控制Co合金膜的结晶状态的底层形成， 用于控制底层结晶状态的非晶金属膜层设置在磁畴控制膜的下方。

公开(公告)号：US20060158793A1

公开(公告)日：2006-07-20

申请号：US11317881

申请日：2005-12-22

申请人： Masatoshi Arasawa ,  Wataru Kimura ,  Shuichi Kojima ,  Koji Okazaki ,  Norihiro Ookawa

发明人： Masatoshi Arasawa ,  Wataru Kimura ,  Shuichi Kojima ,  Koji Okazaki ,  Norihiro Ookawa

IPC分类号： G11B5/127 ,  G11B5/33

CPC分类号： G11B5/3912 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3932

摘要： Making thinner the magnetic domain control layer deteriorates the magnetic properties. Also, disturbances tend to increase the magnetization dispersion of the magnetic domain control layer, thereby lowering the magnetic domain control bias magnetic field. In one embodiment of the invention, a first magnetic domain control layer is provided in the proximity of the free layer of the GMR sensor in such a way that the track width is Twr1. Outside the first magnetic domain control layer is provided a second magnetic domain control layer. The second magnetic domain control layer placed outside the first magnetic domain control layer gives the first magnetic domain control layer an external bias field. The amount of magnetization of the tip of the first magnetic domain control layer is polarized and increased by the bias magnetic field from the second magnetic domain control layer. This causes the first magnetic domain control layer to apply a strong bias magnetic field having a lower dispersion to the free layer of the GMR sensor.

摘要翻译： 使磁畴控制层变薄使磁特性恶化。 此外，扰动倾向于增加磁畴控制层的磁化散度，从而降低磁畴控制偏置磁场。 在本发明的一个实施例中，第一磁畴控制层设置在GMR传感器的自由层附近，使得轨道宽度为Twr1。 在第一磁畴控制层之外设置有第二磁畴控制层。 放置在第一磁畴控制层之外的第二磁畴控制层给予第一磁畴控制层外部偏置场。 第一磁畴控制层的尖端的磁化量被来自第二磁畴控制层的偏置磁场极化并增加。 这使得第一磁畴控制层向GMR传感器的自由层施加具有较低色散的强偏磁场。