公开(公告)号：US08242616B1

公开(公告)日：2012-08-14

申请号：US12550900

申请日：2009-08-31

申请人： Norikazu Motohashi

发明人： Norikazu Motohashi

IPC分类号： H01L23/544 ,  H01L21/301

CPC分类号： H01L24/97 ,  H01L21/4857 ,  H01L21/561 ,  H01L21/6835 ,  H01L23/3128 ,  H01L23/49816 ,  H01L23/544 ,  H01L24/16 ,  H01L24/73 ,  H01L24/81 ,  H01L25/03 ,  H01L25/0655 ,  H01L2221/68345 ,  H01L2223/54453 ,  H01L2224/05573 ,  H01L2224/13025 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/32225 ,  H01L2224/48227 ,  H01L2224/73204 ,  H01L2224/73265 ,  H01L2224/81005 ,  H01L2224/81192 ,  H01L2224/92247 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/01029 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2224/81 ,  H01L2924/00012 ,  H01L2224/83 ,  H01L2224/85 ,  H01L2224/05599

摘要： There is provided a method for manufacturing a semiconductor device, including: forming an interconnection layer over a support base; mounting a plurality of semiconductor chips over the interconnection layer; molding the plurality of semiconductor chips with resin; forming an alignment mark in the resin; and obtaining a molded structure by removing the interconnection layer, the plurality of semiconductor chips and the resin from the support base after forming the alignment mark.

摘要翻译： 提供了一种用于制造半导体器件的方法，包括：在支撑基底上形成互连层; 在所述互连层上安装多个半导体芯片; 用树脂成型多个半导体芯片; 在树脂中形成对准标记; 以及在形成对准标记之后从支撑基底去除互连层，多个半导体芯片和树脂来获得模制结构。

公开(公告)号：US20070207471A1

公开(公告)日：2007-09-06

申请号：US11514843

申请日：2006-09-05

申请人： Tetsuya Osaka ,  Daisuke Niwa ,  Norikazu Motohashi

发明人： Tetsuya Osaka ,  Daisuke Niwa ,  Norikazu Motohashi

IPC分类号： C12Q1/68 ,  C12M3/00 ,  H01L51/00

CPC分类号： G01N27/4145 ,  Y10T436/143333

摘要： A semiconductor DNA sensing device having a detection section is provided. The detection section comprises a structure of a probe DNA/a first organic monolayer/an insulating layer/a semiconductor. The field-effect transistor (FET) comprises a semiconductor substrate and a first insulator layer formed thereon as a reactive gate insulator, and the first insulating layer comprises silicon oxide or an inorganic oxide. The first organic monolayer formed on the first insulator layer comprises an organic molecule having a reactive functional group. The probe DNA contains 3 to 35 nucleotides, and this probe DNA is bonded to the first organic monolayer by the reactive functional group either directly or by an intervening crosslinker. The semiconductor DNA sensing device of the present invention is extremely effective as an on-chip, high-sensitivity, micro multi-DNA sensing device, and an integrated device produced by using such semiconductor DNA sensing device is capable of sensing a DNA including a mismatch sequence such as single nucleotide polymorphism, and such device is indispensable for an advanced medicine and personalized medicine.

摘要翻译： 提供了具有检测部的半导体DNA感测装置。 检测部分包括探针DNA /第一有机单层/绝缘层/半导体的结构。 场效应晶体管（FET）包括半导体衬底和形成在其上的第一绝缘体层作为反应性栅极绝缘体，并且第一绝缘层包括氧化硅或无机氧化物。 形成在第一绝缘体层上的第一有机单层包含具有反应性官能团的有机分子。 探针DNA含有3至35个核苷酸，该探针DNA直接或通过中间交联剂通过反应性官能团与第一有机单层结合。 本发明的半导体DNA感测装置作为片上，高灵敏度的微多DNA感测装置是非常有效的，并且通过使用这种半导体DNA感测装置制造的集成装置能够感测包括不匹配的DNA 序列如单核苷酸多态性，这种装置对先进药物和个性化药物是必不可少的。

公开(公告)号：US20110221071A1

公开(公告)日：2011-09-15

申请号：US13045219

申请日：2011-03-10

申请人： Norikazu MOTOHASHI ,  Kouji SOEJIMA ,  Yoichiro KURITA

发明人： Norikazu MOTOHASHI ,  Kouji SOEJIMA ,  Yoichiro KURITA

IPC分类号： H01L21/84 ,  H01L23/48

CPC分类号： H01L23/3121 ,  H01L21/4857 ,  H01L21/561 ,  H01L21/568 ,  H01L21/6835 ,  H01L23/3128 ,  H01L23/49816 ,  H01L23/49822 ,  H01L23/49827 ,  H01L24/81 ,  H01L24/97 ,  H01L2221/68345 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/221 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/81005 ,  H01L2224/81815 ,  H01L2224/8184 ,  H01L2224/95001 ,  H01L2224/97 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/10329 ,  H01L2924/15174 ,  H01L2924/15311 ,  H01L2924/15331 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/3511 ,  H01L2224/81 ,  H01L2924/00012 ,  H01L2924/00

摘要： In an electronic device having multilayer resin interconnection layers, it is desired to reduce the warp of its support substrate. It is manufactured by: forming a lower layer including a via and a first insulating part on the support substrate; and forming an intermediate layer including a first interconnection and a second insulating part covering the first interconnection on the lower layer. The lower layer is formed by: forming the first insulating part on a first circuit region and a first region surrounding it; and forming the via on the first circuit region. The intermediate layer is formed by: forming the first interconnection on the first circuit region; forming a film of the second insulation part to cover the lower layer; and removing the second insulating part on the first region such that an outer circumferential part of an upper surface of the lower layer part is exposed.

摘要翻译： 在具有多层树脂互连层的电子设备中，期望减少其支撑基板的翘曲。 通过以下方式制造：在支撑基板上形成包括通孔和第一绝缘部分的下层; 以及形成包括第一互连的中间层和覆盖下层上的第一互连的第二绝缘部。 下层通过以下方式形成：在第一电路区域上形成第一绝缘部分和围绕第一绝缘部件的第一区域; 以及在第一电路区上形成通孔。 中间层通过以下方式形成：在第一电路区域上形成第一互连; 形成第二绝缘部分的膜以覆盖下层; 以及去除所述第一区域上的所述第二绝缘部分，使得所述下层部分的上表面的外圆周部分露出。

公开(公告)号：US20100221841A1

公开(公告)日：2010-09-02

申请号：US12717074

申请日：2010-03-03

申请人： Tetsuya OSAKA ,  Daisuke Niwa ,  Norikazu Motohashi

发明人： Tetsuya OSAKA ,  Daisuke Niwa ,  Norikazu Motohashi

IPC分类号： G01N33/50

CPC分类号： G01N27/4145 ,  Y10T436/143333

摘要： A semiconductor DNA sensing device is provided herein, which includes a detection section with a field-effect transistor including a semiconductor substrate and a first insulator layer formed thereon as a reactive gate insulator, the first insulating layer including silicon oxide or an inorganic oxide, a first organic monolayer formed on the first insulator layer, the first organic monolayer comprising an organic molecule having a reactive functional group, and a probe DNA containing 3 to 35 nucleotides bonded to the first organic monolayer by the reactive functional group either directly or by an intervening crosslinker, the structure of the probe DNA/the first organic monolayer/the insulating layer/the semiconductor constituting the detection section.

摘要翻译： 本文提供了一种半导体DNA感测装置，其包括具有场效应晶体管的检测部分，该场效应晶体管包括半导体衬底和形成在其上的作为反应栅极绝缘体的第一绝缘体层，所述第一绝缘层包括氧化硅或无机氧化物， 形成在第一绝缘体层上的第一有机单层，包含具有反应性官能团的有机分子的第一有机单层和通过反应性官能团与第一有机单层结合的3至35个核苷酸的探针DNA直接或通过介入 交联剂，探针DNA /第一有机单层/构成检测部分的绝缘层/半导体的结构。

公开(公告)号：US08062961B1

公开(公告)日：2011-11-22

申请号：US12414011

申请日：2009-03-30

申请人： Norikazu Motohashi

发明人： Norikazu Motohashi

IPC分类号： H01L21/00

CPC分类号： H01L21/6835 ,  H01L21/4846 ,  H01L21/561 ,  H01L21/565 ,  H01L21/568 ,  H01L23/3128 ,  H01L23/5389 ,  H01L23/544 ,  H01L24/97 ,  H01L2221/68345 ,  H01L2221/68381 ,  H01L2223/54426 ,  H01L2223/54486 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/81005 ,  H01L2224/97 ,  H01L2924/01029 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2224/81 ,  H01L2924/00012 ,  H01L2924/00

摘要： Provided is a method for manufacturing a semiconductor device which includes: forming a removal layer over a base (support base); forming an interconnect layer over the removal layer; mounting semiconductor chip(s) over the interconnect layer; and separating the base from the interconnect layer while inducing the separation so as to originate from the removal layer, by irradiating a laser having a wavelength transparent with respect to the support base from the back side thereof, selectively to an unmounted region having no semiconductor chip(s) mounted thereon.

摘要翻译： 提供一种制造半导体器件的方法，其包括：在基底（支撑基底）上形成去除层; 在去除层上形成互连层; 在所述互连层上安装半导体芯片; 通过从其背面照射相对于支撑基底的波长透明的激光，选择性地向不具有半导体芯片的未安装区域照射分离基底与互连层，同时诱导分离从而形成去除层 （s）。