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公开(公告)号：US5256936A
公开(公告)日：1993-10-26
申请号：US766071
申请日：1991-09-27
申请人： Shigeo Itoh , Teruo Watanabe , Hisashi Nakata , Norio Nishimura , Junji Itoh , Seigo Kanemaru
发明人： Shigeo Itoh , Teruo Watanabe , Hisashi Nakata , Norio Nishimura , Junji Itoh , Seigo Kanemaru
CPC分类号： H01J3/022 , H01J31/127
摘要： An image display device capable of minutely setting the interval between an emitter (6) and a gate (5) with high accuracy and of being driven at a significantly reduced drive voltage with good emission uniformity. Each emitter (6) is provided in a recess in a substrate (2), so that the interval between the emitter (6) and a gate (5) is determined depending upon the thickness of the emitter (6). Thus, the interval can be readily controlled by adjusting or varying the period of time during which the film for the emitter (6) is formed, resulting in a micro-interval of the order of sub-microns between the two components being possible with high accuracy.
摘要翻译： 一种图像显示装置，其能够以高精度精确地设置发射极（6）和栅极（5）之间的间隔，并以显着降低的驱动电压驱动，并具有良好的发射均匀性。 每个发射器（6）设置在衬底（2）中的凹部中，使得发射极（6）和栅极（5）之间的间隔根据发射极（6）的厚度来确定。 因此，可以通过调节或改变形成发射器（6）的膜的时间段来容易地控制间隔，导致两个部件之间的亚微米量级的微间隔可以高 准确性。
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公开(公告)号：US5911614A
公开(公告)日：1999-06-15
申请号：US834924
申请日：1997-04-07
申请人： Norio Nishimura , Toshio Kaneshige , Masateru Taniguchi , Takahiro Niiyama , Teruo Watanabe , Minoru Katayama
发明人： Norio Nishimura , Toshio Kaneshige , Masateru Taniguchi , Takahiro Niiyama , Teruo Watanabe , Minoru Katayama
CPC分类号： H01J9/025 , H01J3/022 , H01J2329/92
摘要： A field emission device capable of facilitating manufacturing thereof. A cathode substrate is formed on the same plane thereof with gate terminals and cathode electrode each having an end acting as a cathode terminal, on which an insulating layer is arranged. The insulating layer is formed thereon with gate lines 8, which are connected to the gate terminals through a conductive film deposited in contact holes formed during formation of the gate electrodes.
摘要翻译： 能够促进制造的场致发射装置。 阴极基板在与其端部作为阴极端子的端子和阴极电极的同一平面上形成，绝缘层布置在阴极端子上。 绝缘层上形成有栅极线8，栅极线8通过沉积在形成栅电极的接触孔中的导电膜连接到栅极端子。
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3.发明申请公开(公告)号：US20100237763A1
公开(公告)日：2010-09-23
申请号：US12726115
申请日：2010-03-17
CPC分类号： H01J9/025 , H01J3/021 , H01J29/04 , H01J31/127 , H01J2203/022 , H01J2329/4617
摘要： The present invention provides a novel method for the manufacture of an enhanced cold cathode electron emission source allowing a measure of area to be processed at one time. The method includes the steps of: dissolving first and second polymers in solvent to obtain a polymer solution, and applying the polymer solution onto a second conductive layer before forming a hole; precipitating and immobilizing the first polymer in a particulate in the second polymer by evaporating the solvent; removing the first polymer particulate with a developer to form an etching hole in the second polymer; and performing etching process via the etching hole so as to form the hole in the second conductive layer. In one embodiment, the second polymer has greater solubility than the first polymer in the solvent, and the first polymer has greater solubility than the second polymer in the developer.
摘要翻译： 本发明提供了一种用于制造增强型冷阴极电子发射源的新方法，其允许一次处理面积的测量。 该方法包括以下步骤：将第一和第二聚合物溶解在溶剂中以获得聚合物溶液，并在形成孔之前将聚合物溶液施加到第二导电层上; 通过蒸发溶剂将第一聚合物沉淀并固定在第二聚合物中的颗粒中; 用显影剂除去第一聚合物颗粒以在第二聚合物中形成蚀刻孔; 并通过蚀刻孔进行蚀刻处理，以便在第二导电层中形成孔。 在一个实施方案中，第二聚合物在溶剂中具有比第一聚合物更大的溶解度，并且第一聚合物在显影剂中的溶解度高于第二聚合物。
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公开(公告)号：US5793154A
公开(公告)日：1998-08-11
申请号：US481068
申请日：1995-06-07
申请人： Shigeo Itoh , Teruo Watanabe , Makoto Miyamori , Norio Nishimura , Junji Itoh , Seigo Kanemaru
发明人： Shigeo Itoh , Teruo Watanabe , Makoto Miyamori , Norio Nishimura , Junji Itoh , Seigo Kanemaru
CPC分类号： H01J21/105 , H01J1/3042 , H01J3/022 , H01J9/025 , H01J2201/30426
摘要： A field emission element including a gate and an emitter and capable of penting any of the element oxide layer from being formed on a tip of the emitter to prevent a decrease in emission current, unstable operation and an increase in noise. The gate has a surface formed of a material of oxygen bonding strength higher than that of a material for at least a tip surface of the emitter, so that oxygen atoms and molecules containing oxygen entering the gate may be captured by adsorption on the gate to prevent formation of any oxide layer on the emitter. When a portion of the emitter other than the tip surface is formed of a material of oxygen bonding strength higher than that of the material for the tip surface, formation of any oxide layer on the tip surface of the emitter is minimized.
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公开(公告)号：US5637023A
公开(公告)日：1997-06-10
申请号：US271676
申请日：1994-07-07
申请人： Shigeo Itoh , Teruo Watanabe , Hisashi Nakata , Norio Nishimura , Junji Itoh , Seigo Kanemaru
发明人： Shigeo Itoh , Teruo Watanabe , Hisashi Nakata , Norio Nishimura , Junji Itoh , Seigo Kanemaru
摘要： A field emission element features an emitter which has rectangular projections at its distal end capable of readily controlling the interval between electrodes in increments as small as sub-microns, in order to reduce the voltage at which the device starts field emission at the required level and to improve emission uniformity. An emitter (2,20), a collector (3,21) and a gate (5,22) are arranged on a substrate (1), which is formed with a recess (4) in proximity to the electrodes (2,3,20,21) other than the gate (5). The gate (5) is provided in the recess (4).
摘要翻译： 场发射元件的特征在于在其远端具有矩形突起的发射极，其能够以小至亚微米的增量容易地控制电极之间的间隔，以便降低器件在所需电平下开始场发射的电压， 以提高排放均匀性。 发射极（2,20），集电极（3,21）和栅极（5,22）布置在衬底（1）上，衬底（1）上形成有靠近电极（2,3）的凹部 ，20,21），而不是门（5）。 门（5）设置在凹部（4）中。
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公开(公告)号：US5381069A
公开(公告)日：1995-01-10
申请号：US159114
申请日：1993-11-30
申请人： Shigeo Itoh , Teruo Watanabe , Hisashi Nakata , Norio Nishimura , Junji Itoh , Seigo Kanemaru
发明人： Shigeo Itoh , Teruo Watanabe , Hisashi Nakata , Norio Nishimura , Junji Itoh , Seigo Kanemaru
摘要： A field emission element in which the emitter has rectangular projections at its distal end capable of readily controlling the interval between electrodes in increments as small as sub-microns, in order to reduce the voltage at which the device starts field emission at the required level and to improve emission uniformity. An emitter (2,20), a collector (3,21) and a gate (5,22) are arranged on a substrate (1), which is formed with a recess (4) in proximity to the electrodes (2,3, 20,21) other than the gate (5). The gate (5) is provided in the recess (4).
摘要翻译： 场致发射元件，其中发射器在其远端具有矩形突起，能够以小到亚微米的增量容易地控制电极之间的间隔，以便降低器件在所需电平下开始场发射的电压，以及 以提高排放均匀性。 发射极（2,20），集电极（3,21）和栅极（5,22）布置在衬底（1）上，衬底（1）上形成有靠近电极（2,3）的凹部 ，20,21），而不是门（5）。 门（5）设置在凹部（4）中。
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公开(公告)号：US5469014A
公开(公告)日：1995-11-21
申请号：US829251
申请日：1992-02-03
申请人： Shigeo Itoh , Teruo Watanabe , Makoto Miyamori , Norio Nishimura , Junji Itoh , Seigo Kanemaru
发明人： Shigeo Itoh , Teruo Watanabe , Makoto Miyamori , Norio Nishimura , Junji Itoh , Seigo Kanemaru
CPC分类号： H01J21/105 , H01J1/3042 , H01J3/022 , H01J9/025 , H01J2201/30426
摘要： A field emission element including a gate and an emitter and capable of preventing any of the element oxide layer from being formed on a tip of the emitter to prevent a decrease in emission current, unstable operation and an increase in noise. The gate has a surface formed of a material of oxygen bonding strength higher than that of a material for at least a tip surface of the emitter, so that oxygen atoms and molecules containing oxygen entering the gate may be captured by adsorption on the gate to prevent formation of any oxide layer on the emitter. When a portion of the emitter other than the tip surface is formed of a material of oxygen bonding strength higher than that of the material for the tip surface, formation of any oxide layer on the tip surface of the emitter is minimized.
摘要翻译： 一种场致发射元件，包括栅极和发射极，并且能够防止在发射极的顶端上形成任何元素氧化物层，以防止发射电流降低，操作不稳定和噪声增加。 栅极具有由氧键合强度高于发光体的至少尖端表面的材料的表面形成的表面，从而可以通过栅极上的吸附捕获氧原子和进入栅极的分子，以防止 在发射体上形成任何氧化物层。 当除尖端表面之外的发射体的一部分由氧结合强度高于尖端表面材料的材料形成时，在发射极的顶端表面上形成任何氧化物层都被最小化。
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