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    Thin film transistor, method for manufacturing the same and display using the same
    3.
    发明授权
    Thin film transistor, method for manufacturing the same and display using the same 有权
    薄膜晶体管及其制造方法及其显示方法

    公开(公告)号：US07884368B2

    公开(公告)日：2011-02-08

    申请号：US12833822

    申请日：2010-07-09

    申请人： Mamoru Ishizaki ,  Manabu Ito ,  Masato Kon ,  Osamu Kina ,  Ryohei Matsubara

    发明人： Mamoru Ishizaki ,  Manabu Ito ,  Masato Kon ,  Osamu Kina ,  Ryohei Matsubara

    IPC分类号： H01L33/00

    CPC分类号： H01L29/7869 ,  H01L27/1225 ,  H01L27/1248 ,  H01L29/66969

    摘要： One embodiment of the present invention is a thin film transistor having a gate electrode formed on an insulating substrate, a gate wire connected to the gate electrode, a capacitor electrode, a capacitor wire connected to the capacitor electrode, a gate insulator formed on the gate electrode, an oxide semiconductor pattern formed on the gate insulator, a sealing layer formed on the oxide semiconductor pattern, a drain electrode and a source electrode formed on the sealing layer, a drain wire connected to the drain electrode and a pixel electrode connected to the source electrode, the drain wire and the pixel electrode being in the same layer as the drain electrode and the source electrode. Wherein the gate wire, the capacitor electrode and the capacitor wire are in the same layer as the gate electrode, and wherein the sealing layer does not cover a connection part of the source electrode and a connection part of the drain electrode and wherein the drain electrode and the source electrode are connected to the oxide semiconductor pattern via the connection part of the drain electrode and the connection part of the source electrode.

    摘要翻译： 本发明的一个实施例是一种薄膜晶体管，其具有形成在绝缘基板上的栅电极，连接到栅极的栅极线，电容器电极，连接到电容器电极的电容器线，形成在栅极上的栅极绝缘体 电极，形成在栅极绝缘体上的氧化物半导体图案，形成在氧化物半导体图案上的密封层，形成在密封层上的漏电极和源电极，连接到漏电极的漏极和连接到漏电极的像素电极 源电极，漏极线和像素电极处于与漏电极和源极电极相同的层中。 其中栅极线，电容器电极和电容器线与栅电极处于相同的层中，并且其中密封层不覆盖源电极的连接部分和漏电极的连接部分，并且其中漏电极 并且源电极经由漏电极的连接部分和源电极的连接部分连接到氧化物半导体图案。

    Thin Film Transistor, Method For Manufacturing The Same And Display Using The Same
    5.
    发明申请
    Thin Film Transistor, Method For Manufacturing The Same And Display Using The Same 有权
    薄膜晶体管，制造方法及其使用方法

    公开(公告)号：US20100276692A1

    公开(公告)日：2010-11-04

    申请号：US12833822

    申请日：2010-07-09

    申请人： Mamoru Ishizaki ,  Manabu Ito ,  Masato Kon ,  Osamu Kina ,  Ryohei Matsubara

    发明人： Mamoru Ishizaki ,  Manabu Ito ,  Masato Kon ,  Osamu Kina ,  Ryohei Matsubara

    IPC分类号： H01L29/786

    CPC分类号： H01L29/7869 ,  H01L27/1225 ,  H01L27/1248 ,  H01L29/66969

    摘要： One embodiment of the present invention is a thin film transistor having a gate electrode formed on an insulating substrate, a gate wire connected to the gate electrode, a capacitor electrode, a capacitor wire connected to the capacitor electrode, a gate insulator formed on the gate electrode, an oxide semiconductor pattern formed on the gate insulator, a sealing layer formed on the oxide semiconductor pattern, a drain electrode and a source electrode formed on the sealing layer, a drain wire connected to the drain electrode and a pixel electrode connected to the source electrode, the drain wire and the pixel electrode being in the same layer as the drain electrode and the source electrode. wherein the gate wire, the capacitor electrode and the capacitor wire are in the same layer as the gate electrode, and wherein the sealing layer does not cover a connection part of the source electrode and a connection part of the drain electrode and wherein the drain electrode and the source electrode are connected to the oxide semiconductor pattern via the connection part of the drain electrode and the connection part of the source electrode,

    摘要翻译： 本发明的一个实施例是一种薄膜晶体管，其具有形成在绝缘基板上的栅电极，连接到栅极的栅极线，电容器电极，连接到电容器电极的电容器线，形成在栅极上的栅极绝缘体 电极，形成在栅极绝缘体上的氧化物半导体图案，形成在氧化物半导体图案上的密封层，形成在密封层上的漏电极和源电极，连接到漏电极的漏极和连接到漏电极的像素电极 源电极，漏极线和像素电极处于与漏电极和源极电极相同的层中。 其中所述栅极线，所述电容器电极和所述电容器线处于与所述栅电极相同的层中，并且其中所述密封层不覆盖所述源电极的连接部分和所述漏电极的连接部分，并且其中所述漏电极 并且源电极经由漏电极的连接部分和源电极的连接部分连接到氧化物半导体图案，