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    Heat spreader and method for manufacturing the same, and semiconductor device
    1.
    发明申请
    Heat spreader and method for manufacturing the same, and semiconductor device 审中-公开
    散热器及其制造方法及半导体器件

    公开(公告)号：US20080298024A1

    公开(公告)日：2008-12-04

    申请号：US12155228

    申请日：2008-05-30

    申请人： Kouichi Takashima ,  Shin-ichi Yamagata ,  Osamu Suwata

    发明人： Kouichi Takashima ,  Shin-ichi Yamagata ,  Osamu Suwata

    IPC分类号： H05K7/20 ,  B21C37/00 ,  B05D5/12

    CPC分类号： H01L23/42 ,  H01L23/3732 ,  H01L23/3735 ,  H01L2224/16 ,  H01L2224/73253 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01019 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/16152 ,  Y10T428/12438 ,  H01L2224/0401

    摘要： On a connection surface 2 of a base substrate 1 composed of a material including Cu, a heat spreader includes a Ni plating layer 3 having a high Cu region 5 where the content of Cu is not less than 1% by mass, in a range of not more than 2 μm in the thickness direction from an interface with a base substrate 1, and the content of Cu in a foremost surface 6 of the Ni plating layer 3 is less than 0.5% by mass, and the adhesion strength of the Ni plating layer 3 to the base substrate 1 is not less than 90 N/mm2. A semiconductor device includes a semiconductor element, and the heat spreader for removing heat generated when the semiconductor element is operated. In a manufacturing method, a first plating layer to form the high Cu region is formed on the connection surface 2 of the base substrate 1 and heat-treated at a temperature of more than 600° C., and a second plating layer is then formed thereon and heat-treated at a temperature of not more than 600° C.

    摘要翻译： 在由包含Cu的材料构成的基底基板1的连接表面2上，散热器包括Cu含量高于1质量％的具有高Cu区域5的Ni镀层3， 与基底基板1的界面的厚度方向不大于2μm，Ni镀层3的前表面6中的Cu含量小于0.5质量％，Ni镀层的粘合强度 层3到基底基板1的厚度不小于90N / mm2。 半导体器件包括半导体元件和用于去除半导体元件工作时产生的热量的散热器。 在制造方法中，在基底基板1的连接面2上形成形成高Cu区域的第一镀层，并在600℃以上的温度进行热处理，然后形成第二镀层 在不高于600℃的温度下进行热处理

    Aluminum base member for semiconductor device containing a nitrogen rich surface and method for producing the same
    2.
    发明授权
    Aluminum base member for semiconductor device containing a nitrogen rich surface and method for producing the same 有权
    含有富氮表面的半导体装置用铝基材及其制造方法

    公开(公告)号：US6123895A

    公开(公告)日：2000-09-26

    申请号：US256783

    申请日：1999-02-24

    申请人： Shin-ichi Yamagata ,  Osamu Suwata ,  Chihiro Kawai ,  Akira Fukui ,  Yoshinobu Takeda

    发明人： Shin-ichi Yamagata ,  Osamu Suwata ,  Chihiro Kawai ,  Akira Fukui ,  Yoshinobu Takeda

    IPC分类号： H05K1/05 ,  B22F1/00 ,  B22F3/10 ,  C22C29/06 ,  C22C32/00 ,  H01L23/14 ,  H01L23/15 ,  H01L23/373 ,  B22F3/24 ,  B22F3/12

    CPC分类号： H01L23/142 ,  C22C29/065 ,  C22C32/0063 ,  H01L23/15 ,  H01L23/3733 ,  H01L2924/0002 ,  H05K1/05

    摘要： A member for semiconductor devices comprising a composite alloy of aluminum or an aluminum alloy and silicon carbide, wherein silicon carbide grains are dispersed in aluminum or the aluminum alloy in an amount of from 10 to 70% by weight, the amount of nitrogen in the surface of the member is larger than that in the inside thereof, and the ratio of aluminum or the aluminum alloy to silicon carbide is the same in the surface and the inside. The member is produced by mixing powdery materials of aluminum or an aluminum alloy and silicon carbide, compacting the mixed powder, and sintering the compact in a non-oxidizing atmosphere containing nitrogen gas, at a temperature between 600.degree. C. and the melting point of aluminum. The member is lightweight and has high thermal conductivity as well as thermal expansion coefficient which is well matches with that of ceramics and others. Therefore, the member is especially favorable to high-power devices.

    摘要翻译： 包括铝或铝合金的复合合金和碳化硅的半导体器件的构件，其中碳化硅颗粒以10至70重量％的量分散在铝或铝合金中，表面中的氮的量 的构件比其内部大，铝或铝合金与碳化硅的比例在表面和内部相同。 该构件通过混合铝或铝合金的粉末材料和碳化硅，压制混合粉末，并在含有氮气的非氧化性气氛中在600℃的温度和 铝。 该部件重量轻，导热系数高，热膨胀系数高，与陶瓷等相匹配。 因此，该会员特别有利于大功率设备。

    Member for semiconductor device and method for producing the same
    7.
    发明授权
    Member for semiconductor device and method for producing the same 有权
    半导体装置用部件及其制造方法

    公开(公告)号：US06507105B1

    公开(公告)日：2003-01-14

    申请号：US09498338

    申请日：2000-02-04

    申请人： Shin-ichi Yamagata ,  Osamu Suwata ,  Chihiro Kawai ,  Akira Fukui ,  Yoshinobu Takeda

    发明人： Shin-ichi Yamagata ,  Osamu Suwata ,  Chihiro Kawai ,  Akira Fukui ,  Yoshinobu Takeda

    IPC分类号： H01L2912

    CPC分类号： H01L23/142 ,  C22C29/065 ,  C22C32/0063 ,  H01L23/15 ,  H01L23/3733 ,  H01L2924/0002 ,  H05K1/05 ,  H01L2924/00

    摘要： A member for semiconductor devices comprising a composite alloy of aluminum or an aluminum alloy and silicon carbide, wherein silicon carbide grains are dispersed in aluminum or the aluminum alloy in an amount of from 10 to 70% by weight, the amount of nitrogen in the surface of the member is larger than that in the inside thereof, and the ratio of aluminum or the aluminum alloy to silicon carbide is the same in the surface and the inside. The member is produced by mixing powdery materials of aluminum or an aluminum alloy and silicon carbide, compacting the mixed powder, and sintering the compact in a non-oxidizing atmosphere containing nitrogen gas, at a temperature between 600° C. and the melting point of aluminum. The member is lightweight and has high thermal conductivity as well as thermal expansion coefficient which is well matches with that of ceramics and others. Therefore, the member is especially favorable to high-power devices.

    摘要翻译： 包括铝或铝合金的复合合金和碳化硅的半导体器件的构件，其中碳化硅颗粒以10至70重量％的量分散在铝或铝合金中，表面中的氮的量 的构件比其内部大，铝或铝合金与碳化硅的比例在表面和内部相同。 该构件通过混合铝或铝合金的粉末材料和碳化硅，压制混合粉末，并在含有氮气的非氧化性气氛中，在600℃的温度和 铝。 该部件重量轻，导热系数高，热膨胀系数高，与陶瓷等相匹配。 因此，该会员特别有利于大功率设备。