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1072 条记录 (耗时 0.031 秒)

    Method and apparatus for rapid measurement of heat capacity of a thin film material
    1.
    发明申请
    Method and apparatus for rapid measurement of heat capacity of a thin film material 审中-公开

    公开(公告)号：US20190391094A1

    公开(公告)日：2019-12-26

    申请号：US16365318

    申请日：2019-03-26

    申请人： Xiao-dong XIANG ,  Yuewei Wu ,  Xiao-ping WANG

    发明人： Xiao-dong XIANG ,  Yuewei Wu ,  Xiao-ping WANG

    IPC分类号： G01N25/00 ,  G01N25/18

    摘要： The invention discloses a apparatus and a method for rapid measurement of heat capacity of a thin film material. Specifically, the apparatus comprises a control device, a clock synchronizer, a flat peak laser device, a rapid thermometer and a heat capacity output device; the control device and the clock synchronizer are signally connected, and the clock synchronizer is signally connected to the flat peak laser device and the rapid thermometer; In the working state, the control device sends a start signal to the clock synchronizer, and the flat peak laser device and the fast thermometer coordinately cooperate; the flat peak laser device irradiates a laser with a spatially flat peak to the surface of the sample; At the same time, the rapid thermometer captures the surface temperature of the sample at a certain point in time during the heating process of the sample, and inputs the measured data into the heat capacity output device to obtain the desired heat capacity parameter. The device of the invention has simple structure, high efficiency and accuracy, and can provide reliable parameter data for the current thermal property setting of various ultra-thin semiconductor films.

    Micro-zone laser heating apparatus and method
    2.
    发明申请
    Micro-zone laser heating apparatus and method 审中-公开

    公开(公告)号：US20190389002A1

    公开(公告)日：2019-12-26

    申请号：US16365350

    申请日：2019-03-26

    申请人： Xiao-dong XIANG ,  Yingming Yu ,  Xiao-ping WANG

    发明人： Xiao-dong XIANG ,  Yingming Yu ,  Xiao-ping WANG

    IPC分类号： B23K26/06 ,  B23K26/03 ,  B23K26/064 ,  B23K26/08 ,  B23K26/354

    摘要： The embodiment of the invention discloses a micro-zone laser heating apparatus and method. The micro-zone laser heating apparatus comprises: a laser characteristic determination module, for obtaining first characteristic parameters of the laser required for heating based on the parameters of the current micro-zone to be heated of the sample; a controller, electrically connected to the laser characteristic determination module for generating a control signal based on the first characteristic parameters; a laser output module, electrically connected to the controller for outputting a laser based on the control signal to heat the sample micro-zone to be heated. The micro-zone laser heating apparatus and method provided by the embodiments of the present invention can accurately heat the micro-zone of the high-throughput composite material sample to be heated, while avoiding the phase change of the surrounding area caused by the heating of the material in the adjacent area of the micro-zone to be heated or the component contamination caused by the migration of molecules or atoms inside the sample due to heating. It can be applied to heat treatment or phase change research of low-dimensional and high-density materials.

    Resistive random-access memory with protected switching layer
    4.
    发明授权
    Resistive random-access memory with protected switching layer 有权

    公开(公告)号：US10381557B2

    公开(公告)日：2019-08-13

    申请号：US16062414

    申请日：2016-12-14

    申请人： Shih-Yuan Wang ,  Shih-Ping Wang

    发明人： Shih-Yuan Wang ,  Shih-Ping Wang

    IPC分类号： H01L27/10 ,  H01L27/24 ,  H01L45/00

    摘要： Resistive RAM (RRAM) devices having increased reliability and related manufacturing methods are described. Greater reliability of RRAM cells over time can be achieved by avoiding direct contact of metal electrodes with the device switching layer. The contact can be avoided by cladding the switching layer in a material such as silicon or using electrodes that may contain metal but have regions that are adjacent the switching layer and lack free metal ions except for possible trace amounts.