公开(公告)号：US08375892B2

公开(公告)日：2013-02-19

申请号：US13072177

申请日：2011-03-25

申请人： Tatsuya Sato ,  Patricia M. Liu ,  Fanos Christodoulou

发明人： Tatsuya Sato ,  Patricia M. Liu ,  Fanos Christodoulou

IPC分类号： C23C16/00 ,  C23C16/50

CPC分类号： H01L21/02 ,  H01J37/32862 ,  H01L21/28202 ,  H01L21/3145 ,  H01L21/31612 ,  H01L21/31641 ,  H01L21/31645 ,  Y10T29/41

摘要： In a first aspect, a first method is provided. The first method includes the steps of (1) preconditioning a process chamber with an aggressive plasma; (2) loading a substrate into the process chamber; and (3) performing plasma nitridation on the substrate within the process chamber. The process chamber is preconditioned using a plasma power that is at least 150% higher than a plasma power used during plasma nitridation of the substrate. Numerous other aspects are provided.

摘要翻译： 在第一方面，提供了第一种方法。 第一种方法包括以下步骤：（1）用积极的等离子体预处理室; （2）将基板装载到处理室中; 和（3）在处理室内的基板上进行等离子体氮化处理。 使用等离子体功率预处理室，该等离子体功率比基板的等离子体氮化期间使用的等离子体功率高至少150％。 提供了许多其他方面。

公开(公告)号：US20120202357A1

公开(公告)日：2012-08-09

申请号：US13192041

申请日：2011-07-27

申请人： Tatsuya E. Sato ,  David Thompson ,  Jeffrey W. Anthis ,  Vladimir Zubkov ,  Steven Verhaverbeke ,  Roman Gouk ,  Maitreyee Mahajani ,  Patricia M. Liu ,  Malcolm J. Bevan

发明人： Tatsuya E. Sato ,  David Thompson ,  Jeffrey W. Anthis ,  Vladimir Zubkov ,  Steven Verhaverbeke ,  Roman Gouk ,  Maitreyee Mahajani ,  Patricia M. Liu ,  Malcolm J. Bevan

IPC分类号： H01L21/31 ,  B05D3/10

CPC分类号： H01L21/3105 ,  C23C16/0272 ,  C23C16/405 ,  C23C16/45525 ,  H01L21/02164 ,  H01L21/02181 ,  H01L21/0228 ,  H01L21/02312

摘要： Methods for preparing a substrate for a subsequent film formation process are described. Methods for preparing a substrate for a subsequent film formation process, without immersion in an aqueous solution, are also described. A process is described that includes disposing a substrate into a process chamber, the substrate having a thermal oxide surface with substantially no reactive surface terminations. The thermal oxide surface is exposed to a partial pressure of water above the saturated vapor pressure at a temperature of the substrate to convert the dense thermal oxide with substantially no reactive surface terminations to a surface with hydroxyl surface terminations. This can occur in the presence of a Lewis base such as ammonia.

摘要翻译： 描述制备用于后续成膜工艺的基材的方法。 还描述了不浸没在水溶液中制备用于后续成膜工艺的基材的方法。 描述了一种方法，其包括将衬底设置到处理室中，所述衬底具有基本上没有反应性表面终止的热氧化物表面。 热氧化物表面在基板的温度下暴露于高于饱和蒸气压的水分压，以将基本上没有反应性表面终止的致密热氧化物转变成具有羟基表面终止的表面。 这可以在诸如氨的路易斯碱存在下进行。

公开(公告)号：US20070209930A1

公开(公告)日：2007-09-13

申请号：US11614022

申请日：2006-12-20

申请人： Thai Cheng Chua ,  Alex M. Paterson ,  Steven Hung ,  Patricia M. Liu ,  Tatsuya Sato ,  Valentin Todorow ,  John P. Holland

发明人： Thai Cheng Chua ,  Alex M. Paterson ,  Steven Hung ,  Patricia M. Liu ,  Tatsuya Sato ,  Valentin Todorow ,  John P. Holland

IPC分类号： C23C14/00

CPC分类号： C23C8/10 ,  C23C8/36 ,  C23C14/021 ,  C23C14/027 ,  C23C14/48 ,  C23C14/5806 ,  C23C14/5826 ,  H01J37/32082 ,  H01J37/32146 ,  H01J37/32165 ,  H01L21/67207

摘要： The present invention generally provides methods and apparatuses that are adapted to form a high quality dielectric gate layer on a substrate. Embodiments contemplate a method wherein a metal plasma treatment process is used in lieu of a standard nitridization process to form a high dielectric constant layer on a substrate. Embodiments further contemplate an apparatus adapted to “implant” metal ions of relatively low energy in order to reduce ion bombardment damage to the gate dielectric layer, such as a silicon dioxide layer and to avoid incorporation of the metal atoms into the underlying silicon. In general, the process includes the steps of forming a high-k dielectric and then terminating the surface of the deposited high-k material to form a good interface between the gate electrode and the high-k dielectric material. Embodiments of the invention also provide a cluster tool that is adapted to form a high-k dielectric material, terminate the surface of the high-k dielectric material, perform any desirable post treatment steps, and form the polysilicon and/or metal gate layers.

摘要翻译： 本发明通常提供适于在衬底上形成高质量电介质栅极层的方法和装置。 实施例考虑了一种方法，其中使用金属等离子体处理工艺代替标准氮化工艺以在衬底上形成高介电常数层。 实施例进一步考虑了一种适于“植入”相对较低能量的金属离子的装置，以便减少对诸如二氧化硅层的栅极介电层的离子轰击损伤，并避免将金属原子并入到下面的硅中。 通常，该方法包括以下步骤：形成高k电介质，然后终止沉积的高k材料的表面，以在栅电极和高k电介质材料之间形成良好的界面。 本发明的实施例还提供一种簇工具，其适于形成高k电介质材料，终止高k电介质材料的表面，执行任何期望的后处理步骤，并形成多晶硅和/或金属栅极层。

公开(公告)号：US06454860B2

公开(公告)日：2002-09-24

申请号：US09179921

申请日：1998-10-27

申请人： Craig R. Metzner ,  Turgut Sahin ,  Gregory F. Redinbo ,  Pravin K. Narwankar ,  Patricia M. Liu

发明人： Craig R. Metzner ,  Turgut Sahin ,  Gregory F. Redinbo ,  Pravin K. Narwankar ,  Patricia M. Liu

IPC分类号： C23C1600

CPC分类号： C23C16/4557 ,  C23C16/407 ,  C23C16/44 ,  C23C16/4405 ,  C23C16/4411 ,  C23C16/4412 ,  C23C16/448 ,  C23C16/4481 ,  C23C16/452 ,  C23C16/45561 ,  C23C16/45565 ,  C23C16/54

摘要： An integrated deposition system is provided which is capable of vaporizing low vapor pressure liquid precursors and delivering this vapor into a processing region for use in the fabrication of advanced integrated circuits. The integrated deposition system is made up of a heated exhaust system, a remote plasma generator, a processing chamber and a liquid delivery system which together provide a commercially viable and production worthy system for depositing high capacity dielectric materials from low vapor pressure precursors, anneal those films while also providing commercially viable in-situ cleaning capability.

摘要翻译： 提供一种集成沉积系统，其能够蒸发低蒸气压液体前体并将该蒸气输送到用于制造先进集成电路的处理区域中。 集成沉积系统由加热的排气系统，远程等离子体发生器，处理室和液体输送系统组成，这些系统一起提供了一种商业可行且具有生产价值的系统，用于从低蒸汽压前体沉积大容量电介质材料，退火 同时还提供商业上可行的原位清洁能力。

公开(公告)号：US20110168093A1

公开(公告)日：2011-07-14

申请号：US13072177

申请日：2011-03-25

申请人： Tatsuya Sato ,  Patricia M. Liu ,  Fanos Christodoulou

发明人： Tatsuya Sato ,  Patricia M. Liu ,  Fanos Christodoulou

IPC分类号： C23C16/52 ,  C23C16/44

CPC分类号： H01L21/02 ,  H01J37/32862 ,  H01L21/28202 ,  H01L21/3145 ,  H01L21/31612 ,  H01L21/31641 ,  H01L21/31645 ,  Y10T29/41

摘要： In a first aspect, a first method is provided. The first method includes the steps of (1) preconditioning a process chamber with an aggressive plasma; (2) loading a substrate into the process chamber; and (3) performing plasma nitridation on the substrate within the process chamber. The process chamber is preconditioned using a plasma power that is at least 150% higher than a plasma power used during plasma nitridation of the substrate. Numerous other aspects are provided.

摘要翻译： 在第一方面，提供了第一种方法。 第一种方法包括以下步骤：（1）用积极的等离子体预处理室; （2）将基板装载到处理室中; 和（3）在处理室内的基板上进行等离子体氮化处理。 使用等离子体功率预处理室，该等离子体功率比基板的等离子体氮化期间使用的等离子体功率高至少150％。 提供了许多其他方面。

公开(公告)号：US07913645B2

公开(公告)日：2011-03-29

申请号：US11493193

申请日：2006-07-25

申请人： Tatsuya Sato ,  Patricia M. Liu ,  Fanos Christodoulou

发明人： Tatsuya Sato ,  Patricia M. Liu ,  Fanos Christodoulou

IPC分类号： C23C16/00

CPC分类号： H01L21/02 ,  H01J37/32862 ,  H01L21/28202 ,  H01L21/3145 ,  H01L21/31612 ,  H01L21/31641 ,  H01L21/31645 ,  Y10T29/41

摘要： In a first aspect, a first method is provided. The first method includes the steps of (1) preconditioning a process chamber with an aggressive plasma; (2) loading a substrate into the process chamber; and (3) performing plasma nitridation on the substrate within the process chamber. The process chamber is preconditioned using a plasma power that is at least 150% higher than a plasma power used during plasma nitridation of the substrate. Numerous other aspects are provided.

摘要翻译： 在第一方面，提供了第一种方法。 第一种方法包括以下步骤：（1）用积极的等离子体预处理室; （2）将基板装载到处理室中; 和（3）在处理室内的基板上进行等离子体氮化处理。 使用等离子体功率预处理室，该等离子体功率比基板的等离子体氮化期间使用的等离子体功率高至少150％。 提供了许多其他方面。

公开(公告)号：US20100305884A1

公开(公告)日：2010-12-02

申请号：US12781353

申请日：2010-05-17

申请人： Joseph Yudovsky ,  Jeffrey Tobin ,  Patricia M. Liu ,  Faruk Gungor ,  Tai T. Ngo ,  Travis Tesch ,  Kenric Choi

发明人： Joseph Yudovsky ,  Jeffrey Tobin ,  Patricia M. Liu ,  Faruk Gungor ,  Tai T. Ngo ,  Travis Tesch ,  Kenric Choi

IPC分类号： G01N7/00

CPC分类号： C23C16/4481

摘要： Methods of determining an amount of precursor in an ampoule have been provided herein. In some embodiments, a method for determining an amount of solid precursor in an ampoule may include determining a first pressure in an ampoule having a first volume partially filled with a solid precursor; flowing an amount of a first gas into the ampoule to establish a second pressure in the ampoule; determining a remaining portion of the first volume based on a relationship between the first pressure, the second pressure, and the amount of the first gas flowed into the ampoule; and determining the amount of solid precursor in the ampoule based on the first volume and the remaining portion of the first volume.

摘要翻译： 本文提供了确定安瓿中前体的量的方法。 在一些实施方案中，用于测定安瓿中的固体前体的量的方法可包括确定具有部分填充有固体前体的第一体积的安瓿中的第一压力; 将一定量的第一气体流入安瓿中以在安瓿中建立第二压力; 基于第一压力，第二压力和流入安瓿的第一气体的量之间的关系来确定第一容积的剩余部分; 并且基于第一体积和第一体积的剩余部分确定安瓿中的固体前体的量。

公开(公告)号：US07678710B2

公开(公告)日：2010-03-16

申请号：US11614019

申请日：2006-12-20

申请人： Thai Cheng Chua ,  Steven Hung ,  Patricia M. Liu ,  Tatsuya Sato ,  Alex M. Paterson ,  Valentin Todorov ,  John P. Holland

发明人： Thai Cheng Chua ,  Steven Hung ,  Patricia M. Liu ,  Tatsuya Sato ,  Alex M. Paterson ,  Valentin Todorov ,  John P. Holland

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： H01L21/02175 ,  H01J37/32082 ,  H01J37/32146 ,  H01L21/02148 ,  H01L21/02266 ,  H01L21/0234 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/31155 ,  H01L21/3144 ,  H01L21/316 ,  H01L29/495 ,  H01L29/4966 ,  H01L29/513

摘要： The present invention generally provides methods and apparatuses that are adapted to form a high quality dielectric gate layer on a substrate. Embodiments contemplate a method wherein a metal plasma treatment process is used in lieu of a standard nitridization process to form a high dielectric constant layer on a substrate. Embodiments further contemplate an apparatus adapted to “implant” metal ions of relatively low energy in order to reduce ion bombardment damage to the gate dielectric layer, such as a silicon dioxide layer and to avoid incorporation of the metal atoms into the underlying silicon. In general, the process includes the steps of forming a high-k dielectric and then terminating the surface of the deposited high-k material to form a good interface between the gate electrode and the high-k dielectric material. Embodiments of the invention also provide a cluster tool that is adapted to form a high-k dielectric material, terminate the surface of the high-k dielectric material, perform any desirable post treatment steps, and form the polysilicon and/or metal gate layers.

摘要翻译： 本发明通常提供适于在衬底上形成高质量电介质栅极层的方法和装置。 实施例考虑了一种方法，其中使用金属等离子体处理工艺代替标准氮化工艺以在衬底上形成高介电常数层。 实施例进一步考虑了一种适于“植入”相对较低能量的金属离子的装置，以便减少对诸如二氧化硅层的栅极介电层的离子轰击损伤，并避免将金属原子并入到下面的硅中。 通常，该方法包括以下步骤：形成高k电介质，然后终止沉积的高k材料的表面，以在栅电极和高k电介质材料之间形成良好的界面。 本发明的实施例还提供一种簇工具，其适于形成高k电介质材料，终止高k电介质材料的表面，执行任何期望的后处理步骤，并形成多晶硅和/或金属栅极层。

公开(公告)号：US20070218623A1

公开(公告)日：2007-09-20

申请号：US11614027

申请日：2006-12-20

申请人： Thai Cheng Chua ,  Alex M. Paterson ,  Steven Hung ,  Patricia M. Liu ,  Tatsuya Sato ,  Valentin Todorow ,  John P. Holland

发明人： Thai Cheng Chua ,  Alex M. Paterson ,  Steven Hung ,  Patricia M. Liu ,  Tatsuya Sato ,  Valentin Todorow ,  John P. Holland

IPC分类号： H01L21/8242

CPC分类号： H01L21/31645 ,  C23C14/10 ,  C23C14/345 ,  C23C14/3471 ,  H01L21/02148 ,  H01L21/02156 ,  H01L21/02161 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/02266 ,  H01L21/02321 ,  H01L21/02323 ,  H01L21/02329 ,  H01L21/02337 ,  H01L21/0234 ,  H01L21/28167 ,  H01L21/28185 ,  H01L21/28202 ,  H01L21/28273 ,  H01L21/28282 ,  H01L21/3141 ,  H01L21/3144 ,  H01L21/31612 ,  H01L21/3162 ,  H01L21/31641 ,  H01L29/51

摘要： The present invention generally provides methods and apparatuses that are adapted to form a high quality dielectric gate layer on a substrate. Embodiments contemplate a method wherein a metal plasma treatment process is used in lieu of a standard nitridization process to form a high dielectric constant layer on a substrate. Embodiments further contemplate an apparatus adapted to “implant” metal ions of relatively low energy in order to reduce ion bombardment damage to the gate dielectric layer, such as a silicon dioxide layer and to avoid incorporation of the metal atoms into the underlying silicon. In general, the process includes the steps of forming a high-k dielectric and then terminating the surface of the deposited high-k material to form a good interface between the gate electrode and the high-k dielectric material. Embodiments of the invention also provide a cluster tool that is adapted to form a high-k dielectric material, terminate the surface of the high-k dielectric material, perform any desirable post treatment steps, and form the polysilicon and/or metal gate layers.

摘要翻译： 本发明通常提供适于在衬底上形成高质量电介质栅极层的方法和装置。 实施例考虑了一种方法，其中使用金属等离子体处理工艺代替标准氮化工艺以在衬底上形成高介电常数层。 实施例进一步考虑了一种适于“植入”相对较低能量的金属离子的装置，以便减少对诸如二氧化硅层的栅极介电层的离子轰击损伤，并避免将金属原子并入到下面的硅中。 通常，该方法包括以下步骤：形成高k电介质，然后终止沉积的高k材料的表面，以在栅电极和高k电介质材料之间形成良好的界面。 本发明的实施例还提供一种簇工具，其适于形成高k电介质材料，终止高k电介质材料的表面，执行任何期望的后处理步骤，并形成多晶硅和/或金属栅极层。

公开(公告)号：US06204203B1

公开(公告)日：2001-03-20

申请号：US09172582

申请日：1998-10-14

申请人： Pravin K. Narwankar ,  Turgut Sahin ,  Gregory F. Redinbo ,  Patricia M. Liu ,  Huyen T. Tran

发明人： Pravin K. Narwankar ,  Turgut Sahin ,  Gregory F. Redinbo ,  Patricia M. Liu ,  Huyen T. Tran

IPC分类号： H01L2131

CPC分类号： H01L21/28185 ,  H01J37/32862 ,  H01L21/28194 ,  H01L21/28202 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518

摘要： A method of forming a metal oxide dielectric film. According to the present invention an amorphous metal oxide dielectric film is deposited over a substrate utilizing a metal organic precursor. The substrate is then heated in an inert ambient to convert the amorphous metal oxide dielectric to a polycrystalline metal oxide dielectric. The polycrystalline metal dielectric is then heated in a oxygen containing ambients.

摘要翻译： 一种形成金属氧化物电介质膜的方法。 根据本发明，使用金属有机前体将非晶金属氧化物介电膜沉积在衬底上。 然后将衬底在惰性环境中加热以将非晶态金属氧化物电介质转化为多晶金属氧化物电介质。 然后在含氧环境中加热多晶金属电介质。